利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

234 条记录 (耗时 0.021 秒)

    MICROELECTRONIC DEVICES WITH IMPROVED HEAT DISSIPATION AND METHODS FOR COOLING MICROELECTRONIC DEVICES
    1.
    发明申请
    MICROELECTRONIC DEVICES WITH IMPROVED HEAT DISSIPATION AND METHODS FOR COOLING MICROELECTRONIC DEVICES 失效
    具有改进的散热装置的微电子装置和用于冷却微电子装置的方法

    公开(公告)号：US20070075407A1

    公开(公告)日：2007-04-05

    申请号：US11608648

    申请日：2006-12-08

    申请人： Joseph Lindgren ,  Warren Farnworth ,  William Hiatt ,  Nishant Sinha

    发明人： Joseph Lindgren ,  Warren Farnworth ,  William Hiatt ,  Nishant Sinha

    IPC分类号： H01L23/495

    CPC分类号： H01L23/367 ,  H01L23/427 ,  H01L24/31 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/10158 ,  H01L2924/19041 ,  H01L2224/0401

    摘要： Microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices are disclosed herein. In one embodiment, the microelectronic device includes a microelectronic substrate having a first surface, a second surface facing opposite from the first surface, and a plurality of active devices at least proximate to the first surface. The second surface has a plurality of heat transfer surface features that increase the surface area of the second surface. In another embodiment, an enclosure having a heat sink and a single or multi-phase thermal conductor can be positioned adjacent to the second surface to transfer heat from the active devices.

    摘要翻译： 本文公开了具有改善的散热的微电子器件，制造微电子器件的方法以及冷却微电子器件的方法。 在一个实施例中，微电子器件包括具有第一表面，与第一表面相对的第二表面的微电子衬底以及至少靠近第一表面的多个有源器件。 第二表面具有增加第二表面的表面积的多个传热表面特征。 在另一个实施例中，具有散热器和单相或多相热导体的外壳可以邻近第二表面定位以传递来自有源器件的热量。

    Methods for forming protective layers on semiconductor device substrates
    9.
    发明申请
    Methods for forming protective layers on semiconductor device substrates 失效
    在半导体器件基板上形成保护层的方法

    公开(公告)号：US20050101158A1

    公开(公告)日：2005-05-12

    申请号：US11012569

    申请日：2004-12-15

    申请人： Warren Farnworth ,  Warren Farnworth

    发明人： Warren Farnworth ,  Warren Farnworth

    IPC分类号： H01L23/31 ,  H01L21/44 ,  H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/44 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y40/00 ,  B33Y80/00 ,  H01L23/3157 ,  H01L23/3192 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2224/29099 ,  H01L2924/00

    摘要： Methods for forming protective layers on semiconductor devices, including semiconductor devices that are carried by fabrication substrates, that are parts of assemblies, and that include individual dies, includes at least partially consolidating previously unconsolidated material selectively, in accordance with a program. The method may include use of a machine vision system or other object recognition apparatus to provide precise die-specific alignment. A protective structure may be formed to include at least one layer or segment of dielectric material having a controlled thickness or depth and a precise boundary. The layer or segment may include precisely sized, shaped, and located apertures through which conductive terminals, such as bond pads, on the surface of the die may be accessed. Dielectric material may also be employed as a structure to mechanically reinforce a die-to-substrate (e.g., die-to-lead frame) attachment.

    摘要翻译： 在半导体器件上形成保护层的方法，包括由制造衬底承载的半导体器件，其是组件的部件，并且包括单独的裸片，包括根据程序选择性地至少部分地固结先前未合并的材料。 该方法可以包括使用机器视觉系统或其他物体识别装置来提供精确的模具特异性对准。 可以形成保护结构以包括具有受控厚度或深度和精确边界的至少一个介电材料层或段。 层或段可以包括精确尺寸的，成形的和定位的孔，通过该孔可以访问管芯表面上的导电端子，例如接合焊盘。 电介质材料也可以用作结构以机械加强芯片到基板（例如，管芯到引线框架）的连接。

    Wafer level method of locating focal plane of imager devices
    10.
    发明授权
    Wafer level method of locating focal plane of imager devices 有权
    定位成像设备焦平面的晶片级方法

    公开(公告)号：US07785915B2

    公开(公告)日：2010-08-31

    申请号：US11554243

    申请日：2006-10-30

    申请人： Warren Farnworth

    发明人： Warren Farnworth

    IPC分类号： H01L21/00 ,  H01L21/30

    CPC分类号： H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L27/14689 ,  H01L2224/48091 ,  H01L2924/15174 ,  H04N5/2257 ,  H01L2924/00014

    摘要： A method is disclosed which includes providing an imager substrate comprised of at least one imager device, providing a transparent substrate, forming a plurality of standoff structures on one of the imager substrate and the transparent substrate, the standoff structures having a width, forming an adhesive material having an initial thickness on a surface on at least one of the standoff structures, the adhesive material having an initial width that is less than the width of the standoff structures, and urging one of the imager substrate and the transparent substrate toward the other until such time as the imager substrate and the transparent substrate are in proper focal position relative to one another, the urging causing the initial thickness of the adhesive material to be reduced to a final thickness that is less than the initial thickness.

    摘要翻译： 公开了一种方法，其包括提供由至少一个成像器装置构成的成像器衬底，提供透明衬底，在成像器衬底和透明衬底之一上形成多个间隔结构，间隔结构具有宽度，形成粘合剂 在至少一个支座结构上的表面上具有初始厚度的材料，所述粘合材料具有小于所述支座结构的宽度的初始宽度，并且将所述成像器基板和所述透明基板中的一个朝向另一个，直到 像成像器基板和透明基板相对于彼此处于适当的焦点位置的时间，使粘合剂材料的初始厚度减小到小于初始厚度的最终厚度的推动。