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    Substrate polishing apparatus and substrate polishing method
    1.
    发明申请
    Substrate polishing apparatus and substrate polishing method 审中-公开
    基板抛光装置和基板抛光方法

    公开(公告)号：US20070238395A1

    公开(公告)日：2007-10-11

    申请号：US11806581

    申请日：2007-06-01

    申请人： Norio Kimura ,  Tatsuya Kohama ,  Makoto Akagi

    发明人： Norio Kimura ,  Tatsuya Kohama ,  Makoto Akagi

    IPC分类号： B24B1/00 ,  B24B7/00

    CPC分类号： H01L21/67051 ,  B24B37/042 ,  B24B49/006 ,  B24B49/16 ,  H01L21/02074 ,  H01L21/0209 ,  H01L21/3212 ,  H01L21/67046 ,  H01L21/7684

    摘要： A substrate polishing apparatus wherein a semiconductor substrate is held by a top ring 10-2 or 11-2 and is pressed against a polishing surface of a polishing table 10-1 or 10-2. A surface to be polished of the semiconductor substrate is polished by a relative movement between the semiconductor substrate and the polishing surface. The apparatus includes a pressing force changing mechanism for changing a pressing force for pressing the semiconductor substrate, a relative movement seed changing mechanism for changing the number of revolutions of the top ring and/or the polishing table, and a control mechanism. The control mechanism performs the polishing through plural polishing processes on the polishing table 10-1 or 10-2 while changing the pressing force and the number of revolutions.

    摘要翻译： 一种衬底抛光装置，其中半导体衬底由顶环10-2或11-2保持并且被压靠在抛光台10-1或10-2的抛光表面上。 通过半导体衬底和抛光表面之间的相对运动来抛光半导体衬底的待抛光表面。 该装置包括用于改变用于按压半导体衬底的按压力的按压力改变机构，用于改变顶环和/或抛光台的转数的相对运动种子改变机构和控制机构。 控制机构通过在研磨台10-1或10-2上进行多次研磨处理而进行研磨，同时改变按压力和转速。

    Polishing method and apparatus
    2.
    发明授权
    Polishing method and apparatus 有权

    公开(公告)号：US06663469B2

    公开(公告)日：2003-12-16

    申请号：US09870479

    申请日：2001-06-01

    申请人： Norio Kimura ,  Tatsuya Kohama

    发明人： Norio Kimura ,  Tatsuya Kohama

    IPC分类号： B24B719

    CPC分类号： H01L21/7684 ,  B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  H01L21/02074 ,  H01L21/3212

    摘要： A semiconductor substrate having a Cu layer formed so as to fill wiring grooves formed in the substrate surface and to cover regions of the substrate surface where no wiring groove is formed is brought into sliding contact with a polishing surface on a turntable to carry out polishing until the Cu layer is polished to a predetermined thickness. Then, the semiconductor substrate is brought into sliding contact with a polishing surface on a turntable to carry out polishing until the Cu layer on the substrate surface is removed, except for portions of the Cu layer formed to fill the wiring grooves, and a barrier metal layer is also removed. Thus, the Cu layer on the substrate surface can be removed uniformly, and the Cu wiring portions formed in the wiring grooves can be planarly and uniformly polished without giving rise to problems of over-polishing such as dishing or erosion.

    POLISHING METHOD
    6.
    发明申请
    POLISHING METHOD 有权
    抛光方法

    公开(公告)号：US20090286332A1

    公开(公告)日：2009-11-19

    申请号：US12465024

    申请日：2009-05-13

    申请人： Shinrou OHTA ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

    发明人： Shinrou OHTA ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

    IPC分类号： H01L21/66

    CPC分类号： H01L22/26 ,  H01L21/3212 ,  H01L21/67219 ,  H01L22/14

    摘要： A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film, during the second polishing process and the third polishing process, monitoring a polishing state of the substrate with an eddy current sensor, and terminating the third polishing process when an output signal of the eddy current sensor reaches a predetermined threshold.

    摘要翻译： 描述了在其上抛光具有金属膜的基板的方法。 基板具有由金属膜的一部分形成的金属互连。 抛光方法包括：进行第一抛光处理后的第一抛光处理，在第一抛光处理之后，在第二抛光处理之后执行去除阻挡膜的第二抛光工艺，进行抛光绝缘膜的第三抛光处理 第二抛光工艺和第三抛光工艺，用涡流传感器监测衬底的抛光状态，并且当涡流传感器的输出信号达到预定阈值时终止第三抛光处理。

    Method and apparatus for polishing a workpiece
    7.
    发明授权
    Method and apparatus for polishing a workpiece 有权
    抛光工件的方法和设备

    公开(公告)号：US07077730B2

    公开(公告)日：2006-07-18

    申请号：US10883772

    申请日：2004-07-06

    申请人： Tatsuya Kohama ,  Yukiko Nishioka ,  Yoshikazu Ariga

    发明人： Tatsuya Kohama ,  Yukiko Nishioka ,  Yoshikazu Ariga

    IPC分类号： B24B5/00 ,  B24B29/00

    CPC分类号： B24B37/04 ,  B24B57/02

    摘要： A method and apparatus for polishing a workpiece are set forth which can polish the workpiece at a constant rate at a stable condition even when plural workpieces are continually polished. The method comprises dressing a polishing surface of a polishing table while supplying a dressing solution. After the dressing, the dressing solution remaining on the polishing surface is removed by rotating the polishing table at a dewatering rotation speed while stopping the supply of the dressing solution. Then, the workpiece is polished by making the workpiece slidingly contact with the polishing surface while supplying a polishing solution to the polishing surface.

    摘要翻译： 阐述了一种用于抛光工件的方法和装置，即使当多个工件被连续抛光时，其可以以稳定的状态以恒定的速度抛光工件。 该方法包括在提供敷料溶液的同时修整抛光台的抛光表面。 修整后，通过在停止供给敷料溶液的同时以脱水转速旋转研磨台，除去留在研磨面上的敷料液。 然后，通过使工件与研磨面滑动接触，同时向研磨面供给研磨液，抛光工件。

    Polishing pad and polishing apparatus
    9.
    发明申请
    Polishing pad and polishing apparatus 审中-公开
    抛光垫和抛光装置

    公开(公告)号：US20070135024A1

    公开(公告)日：2007-06-14

    申请号：US11634953

    申请日：2006-12-07

    申请人： Itsuki Kobata ,  Tatsuya Kohama

    发明人： Itsuki Kobata ,  Tatsuya Kohama

    IPC分类号： B24B1/00 ,  B24B29/00 ,  B24D11/00

    CPC分类号： B24B53/017 ,  B24B37/26

    摘要： A polishing pad enables efficient removal of a polishing product and an “old polishing liquid” remaining on a surface (polishing surface) or in through-holes of a polishing pad. The polishing pad has a polishing surface and a plurality of through-holes extending in the thickness direction, which communicate with each other by communication grooves. The through-holes have a diameter of, e.g., 2 to 5 mm. The aperture ratio of the through-holes is, e.g., 10 to 50% of the surface area of the polishing surface of the polishing pad. The depth of the communication grooves is, e.g., 40 to 60% of the thickness of the polishing pad. The width of the communication grooves is, e.g., 10 to 50% of the diameter of the through-holes.

    摘要翻译： 抛光垫能够有效地去除抛光产品和残留在抛光垫的表面（抛光表面）上或通孔中的“旧抛光液”。 抛光垫具有研磨面和在厚度方向上延伸的多个通孔，其通过连通槽彼此连通。 通孔具有例如2至5mm的直径。 通孔的开口率例如为抛光垫的研磨面的表面积的10〜50％。 连通槽的深度例如为抛光垫的厚度的40〜60％。 连通槽的宽度例如为通孔直径的10〜50％。

    Polishing apparatus and polishing method
    10.
    发明申请
    Polishing apparatus and polishing method 审中-公开
    抛光设备和抛光方法

    公开(公告)号：US20060105678A1

    公开(公告)日：2006-05-18

    申请号：US11086420

    申请日：2005-03-23

    申请人： Tatsuya Kohama ,  Itsuki Kobata ,  Toshikazu Nomura

    发明人： Tatsuya Kohama ,  Itsuki Kobata ,  Toshikazu Nomura

    IPC分类号： B24B51/00

    CPC分类号： B24B37/04 ,  B24B57/02

    摘要： A polishing apparatus can supply a polishing liquid uniformly and efficiently to a surface to be polished of a workpiece. The polishing apparatus includes a polishing table having a polishing surface, and a top ring for holding a semiconductor wafer and pressing the semiconductor wafer against the polishing surface. The polishing apparatus also includes a polishing liquid supply port for supplying a polishing liquid to the polishing surface, and a moving mechanism for moving the polishing liquid supply port to distribute the polishing liquid uniformly over an entire surface of the workpiece due to relative movement of the workpiece and the polishing surface.

    摘要翻译： 抛光装置可以将抛光液体均匀且有效地提供给被抛光的表面。 抛光装置包括具有抛光表面的抛光台和用于保持半导体晶片并将半导体晶片压靠在抛光表面上的顶环。 抛光装置还包括用于将抛光液供给到研磨面的研磨液供给口，以及用于使抛光液供给口移动以使研磨液均匀地分布在工件的整个表面上的移动机构， 工件和抛光面。