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公开(公告)号：US20100022771A1
公开(公告)日：2010-01-28
申请号：US12441674
申请日：2007-09-14
申请人： Noriyuki Yoneda , Yuichi Oda , Yasuo Nakanishi
发明人： Noriyuki Yoneda , Yuichi Oda , Yasuo Nakanishi
IPC分类号： C07D487/02 , B01J19/00 , C07C55/06
CPC分类号： C07D487/04 , B01J19/243 , B01J2219/00063 , C07C67/343 , C07C69/716
摘要： The present invention is directed at obtaining a high yield of a target substance and simultaneously securing high productivity.A reaction apparatus 10 has: a main flow channel 12 having an inner diameter of 3 mm, in which a raw material M1 flows; an introduction flow channel 14 in which a raw material M2 that causes a chemical reaction with the raw material M1 flows; and five branch introduction flow channels 16a to 16e which are branched from the introduction flow channel 14 and introduce the raw material M2 to the main flow channel 12, at predetermined introduction points 12o to 12s in the main flow channel 12. Here, in the main flow channel 12, the flow channel lengths of the flow channels 12b to 12d between adjacent introduction points 12p to 12s are not longer than those of the flow channels 12a to 12c between the next previous adjacent introduction points 12o to 12r in a flow direction of the raw material M1. At least one length of the flow channels 12b to 12d between the adjacent introduction points 12p to 12s is shorter than lengths of the flow channels 12a to 12c between previous adjacent introduction points 12o to 12r in the flow direction of the raw material M1.
摘要翻译： 本发明涉及获得高产率的目标物质并同时确保高生产率。 反应装置10具有：原料M1流过的内径为3mm的主流路12; 导入与原料M1发生化学反应的原料M2的导入流路14; 以及从导入流路14分支并将原料M2引入主流路12的五个分支导入流路16a〜16e，在主流路12中的预定的导入点12o〜12s。这里，主 在流路12中，相邻导入点12p〜12s之间的流路12b〜12d的流路长度不比前一相邻导入点12o〜12r之间的流路12a〜12c的流路长度在 原料M1。 在相邻的导入点12p〜12s之间的流路12b〜12d的至少一个长度比原料M1的流动方向的前一相邻导入点12o〜12r之间的流路12a〜12c的长度短。
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2.发明授权公开(公告)号：US09044758B2
公开(公告)日：2015-06-02
申请号：US13509573
申请日：2010-11-12
申请人： Toshiyuki Niwa , Shohei Sugimoto , Kazumi Danjo , Masaaki Nishio , Yasuo Nakanishi , Sakiko Kawamura
发明人： Toshiyuki Niwa , Shohei Sugimoto , Kazumi Danjo , Masaaki Nishio , Yasuo Nakanishi , Sakiko Kawamura
CPC分类号： B02C19/186 , B02C17/16
摘要： Disclosed is a manufacturing method for a fine powder exhibiting improved solubility, little impurity contamination, and a high recovery rate. Material to be ground and a grinding medium are suspended and stirred in a liquefied inert gas dispersion medium such as dried ice, and the material to be ground is made into a sub-micron or nano-sized fine powder. A uniform fine powder can be obtained when the material to be ground is a mixture having two or more components. Impurity contamination can be reduced by using granular dry ice as the grinding medium.
摘要翻译： 公开了一种表现出改进的溶解性，少量杂质污染和高回收率的细粉的制造方法。 要研磨的材料和研磨介质在液化的惰性气体分散介质如干冰中悬浮和搅拌，并将待研磨的材料制成亚微米或纳米级的细粉末。 当被研磨材料为具有两种或多种组分的混合物时，可获得均匀的细粉末。 通过使用颗粒状干冰作为研磨介质可以减少杂质污染。
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公开(公告)号：US20130056748A1
公开(公告)日：2013-03-07
申请号：US13601527
申请日：2012-08-31
IPC分类号： H01L33/32
CPC分类号： H01L33/60 , H01L33/0075 , H01L33/22 , H01L33/32 , H01L33/46 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2933/0058 , H01L2924/00014
摘要： A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.
摘要翻译： 发光器件包括发光层，对于发光层的发射波长透明并且被定位成从发光层接收发光波长的衬底，包括多个凸起部分的离散集合的凸形图案 以第一间距布置在衬底的前表面上，位于衬底的前表面上的n型氮化物半导体层以覆盖位于发光层上的凸形图案和ap型氮化物半导体层。 发光层位于n型半导体层上。 每个凸起部分包括一个副凸起的图案，该凸出的凹凸图形包括多个微细凸起部分，该凹凸部分离开地形成在凸起部分的顶部，具有比第一间距小的第二间距，以及支撑该子凸形图案的基部。
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公开(公告)号：US08653551B2
公开(公告)日：2014-02-18
申请号：US13350013
申请日：2012-01-13
申请人： Takao Fujimori , Yasuo Nakanishi
发明人： Takao Fujimori , Yasuo Nakanishi
IPC分类号： H01L33/00
CPC分类号： H01L33/005 , H01L33/38 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
摘要： A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): 3 λ 4 n + 0.30 × ( λ 4 n ) ≤ T ≤ 3 λ 4 n + 0.45 × ( λ 4 n ) ( 1 ) wherein λ is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.
摘要翻译： 提供一种发光元件，发光元件单元和发光元件封装，其通过抑制透明电极层中的多个光反射而降低反射损失和膜内光吸收，因此具有较高的亮度 。 发光元件1包括基板2，n型氮化物半导体层3，发光层4，p型氮化物半导体层5，透明电极层6和反射电极层7，以及 透明电极层6的厚度T满足下面的表达式（1）：3λ4·托恩n + 0.30×（λ4·托恩n）<= T <=3λ4·托恩+ 0.45×（λ 4n）（1）其中，λ是发光元件4的发光波长，n是透明电极层6的折射率。
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5.发明申请NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR 审中-公开氮化物半导体发光元件和制造氮化物半导体的方法公开(公告)号：US20100133506A1
公开(公告)日：2010-06-03
申请号：US12452060
申请日：2008-06-13
摘要： Provided are a nitride semiconductor light emitting element having a nitride semiconductor layered on an AlN buffer layer with improved qualities such as crystal quality and with improved light emission output, and a method of manufacturing a nitride semiconductor. An AlN buffer layer (2) is formed on a sapphire substrate (1), and nitride semiconductors of an n-type AlGaN layer (3), an InGaN/GaN active layer (4) and a p-type GaN layer (5) are layered in sequence on the buffer layer (2). An n-electrode (7) is formed on a surface of the n-type AlGaN layer (3), and a p-electrode (6) is formed on the p-type GaN layer (5). The n-type AlGaN layer (3) serves as a cladding layer for confining light and carriers. The AlN buffer layer (2) is manufactured by alternately supplying an Al material and an N material at a growing temperature of 900° C. or higher.
摘要翻译： 提供一种氮化物半导体发光元件，其具有层叠在AlN缓冲层上的氮化物半导体，其具有改善的质量，例如晶体质量和改善的发光输出，以及制造氮化物半导体的方法。 在蓝宝石衬底（1）上形成AlN缓冲层（2），并且n型AlGaN层（3），InGaN / GaN有源层（4）和p型GaN层（5）的氮化物半导体 在缓冲层（2）上依次分层。 在n型AlGaN层（3）的表面上形成n电极（7），在p型GaN层（5）上形成p电极（6）。 n型AlGaN层（3）用作限制光和载流子的包覆层。 AlN缓冲层（2）通过在900℃以上的生长温度下交替地供给Al材料和N材料来制造。
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6.发明申请公开(公告)号：US20100102341A1
公开(公告)日：2010-04-29
申请号：US12452049
申请日：2008-06-03
申请人： Kazuaki Tsutsumi , Yohei Ito , Yasuo Nakanishi , Shunji Nakata
发明人： Kazuaki Tsutsumi , Yohei Ito , Yasuo Nakanishi , Shunji Nakata
IPC分类号： H01L33/00 , H01L21/302
摘要： A semiconductor light emitting device includes: a transparent substrate including a first principal surface and a second principal surface opposite with the first principal surface, in which side surfaces between the first principal surface and the second principal surface are rough surfaces; and a semiconductor light emitting element that is arranged on the first principal surface of the transparent substrate and is composed by stacking nitride semiconductors on each other.
摘要翻译： 一种半导体发光器件包括：透明基板，包括第一主表面和与第一主表面相对的第二主表面，其中第一主表面和第二主表面之间的侧表面是粗糙表面; 以及半导体发光元件，其配置在透明基板的第一主面上，并且由氮化物半导体构成。
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7.发明申请公开(公告)号：US20090179215A1
公开(公告)日：2009-07-16
申请号：US12318831
申请日：2009-01-09
申请人： Nobuaki Matsui , Yasuo Nakanishi
发明人： Nobuaki Matsui , Yasuo Nakanishi
IPC分类号： H01L33/00 , H01L21/318
摘要： A semiconductor light emitting device includes a first metal layer placed on the p-type semiconductor layer on the substrate, and includes a first pattern width W1; a second metal layer on the first metal layer; a transparent electrode layer on the second metal layer and the p type semiconductor layer, and has an opening patterned with a second pattern width W2 on the second metal layer; an insulating film the transparent electrode layer and the second metal layer, and has an opening patterned with third pattern width W3 on the second metal layer; a reflective stacked film on the insulating film, and has an opening patterned with third pattern width W3 on the second metal layer; a third metal layer on the second metal layer of an opening patterned with the reflective stacked film and third pattern width W3; and a fourth metal layer on the third metal layer.
摘要翻译： 半导体发光器件包括：第一金属层，设置在基板上的p型半导体层上，并且包括第一图案宽度W1; 第一金属层上的第二金属层; 在第二金属层和p型半导体层上的透明电极层，并且具有在第二金属层上以第二图案宽度W2图案化的开口; 绝缘膜，透明电极层和第二金属层，并且具有在第二金属层上以第三图案宽度W3图案化的开口; 绝缘膜上的反射层叠膜，并且在第二金属层上具有用第三图案宽度W3图案化的开口; 在反射层叠膜图案化的开口的第二金属层上的第三金属层和第三图案宽度W3; 以及第三金属层上的第四金属层。
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公开(公告)号：US5550611A
公开(公告)日：1996-08-27
申请号：US203643
申请日：1994-03-01
申请人： Tokuji Ishida , Yasuo Nakanishi , Toshihiko Ishimura , Takehiro Katoh , Kenji Ishibashi , Yoshihiro Hara , Takashi Kondo , Hiroshi Yoshino
发明人： Tokuji Ishida , Yasuo Nakanishi , Toshihiko Ishimura , Takehiro Katoh , Kenji Ishibashi , Yoshihiro Hara , Takashi Kondo , Hiroshi Yoshino
CPC分类号： G03B7/091 , G03B2213/025
摘要： A camera includes an operation device having a plurality of operation modes for executing an operation, a mode changing device for changing over operation modes, a designation device for designating a desired operation mode as an initial mode, and a reset device for resetting the operation device to the designated initial mode.
摘要翻译： 相机包括具有用于执行操作的多种操作模式的操作装置，用于切换操作模式的模式改变装置，用于指定期望操作模式的指定装置作为初始模式，以及用于重置操作装置的复位装置 到指定的初始模式。
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9.发明授权
公开(公告)号：US4519854A
公开(公告)日：1985-05-28
申请号：US585877
申请日：1983-12-29
CPC分类号： B23K1/0004 , C21D1/84 , C21D9/0056
摘要： A process and apparatus for heat treatment of a steel article made of soft steel or the like comprising heating the steel article to a brazing temperature of 1100.degree.-1200.degree. C., then cooling the steel article in a furnace to a temperature of about 570.degree.-720.degree. C., and thereafter rapidly cooling the article. The article is heated to brazing temperature in an oxidation-free atmosphere and is also cooled in an oxidation-free atmosphere. The article can be rapidly cooled by contact with a surface pretreatment solution.
摘要翻译： 一种由软钢等制成的钢制品的热处理方法和装置，其特征在于，将钢制品加热至1100〜1200℃的钎焊温度，然后将钢制品在炉中冷却至约570℃ ℃-720℃，然后快速冷却制品。 将该制品在无氧化气氛中加热至钎焊温度，并在无氧化气氛中冷却。 可以通过与表面预处理溶液接触来快速冷却制品。
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10.发明授权公开(公告)号：US09082945B2
公开(公告)日：2015-07-14
申请号：US13339060
申请日：2011-12-28
CPC分类号： H01L33/60 , F21V7/00 , H01L33/486 , H01L33/62 , H01L2224/16225
摘要： A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.
摘要翻译： 根据本发明的发光元件单元包括具有表面，后表面和侧表面的半导体发光元件，其中表面或背表面是从其发射的光的光提取表面， 具有底壁和侧壁的基座具有由底壁和侧壁限定的凹部，并且通过底壁将光提取表面向上指向的位置支撑半导体发光元件 所述凹部具有在所述侧壁上的倾斜面，相对于所述底壁以与所述半导体发光元件的侧面相对的方式倾斜预定角度，并且形成在所述倾斜面上的光反射膜 底座。
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