摘要:
A new polymer family is shown for use in high speed photoresists. A dry film photoresist includes a polymer binder prepared from t-butyl methacrylate/methylmethacrylate/acrylic acid/ethyl acrylate and a suitable initiator.
摘要:
A new polymer family is shown for use in high sensitivity, high resolution photoresists. A liquid apply resist includes a polymer binder of t-butyl methacrylate/methylmethacrylate/methacrylic acid and an initiator which generates acid upon exposure to radiation.
摘要:
A composition including an initiator which generates acid upon exposure to radiation in the presence of a sensitizer. The composition may be mixed with an acid sensitive polymer or prepolymer to make a visible light or laser imageable photoresist. The sensitizer has phenylethynyl and methoxy substituents which, when properly positioned, allow it to utilize all of the visible argon ion laser lines.
摘要:
Disclosed is a positive photoresist. The photoresist has as its polymeric component a substantially water and base insoluble, photolabile polymer. The photoresist further includes a photo acid generator that is capable of forming a strong acid. This photo acid generator may be a sulfonate ester derived from a N-hydroxyamide, or a N-hydroxyimide. Finally, the photoresist composition includes an appropriate photosensitizer.
摘要:
The present invention relates to a radiation-sensitive resist composition comprising (a) a radiation-sensitive acid generator, (b) a substituted androstane, and (c) a copolymer binder. The copolymer binder comprises (meth)acrylic/(meth)acrylate copolymer.
摘要:
An improved photoimagable cationically polymerizable epoxy based coating material is provided, that is suitable for use on a variety of substrates. The material includes an epoxy resin system consisting essentially of between about 10% and about 80% by weight of a polyol resin which preferably is a condensation product of epichlorohydrin and bisphenol A having a molecular weight of between about 40,000 and 130,000; and between about 35% and 72% by weight of an epoxidized glycidyl ether of a brominated bisphenol A having a softening point of between about 60.degree. C. and about 110.degree. C. and a molecular weight of between about 600 and 2,500. A third resin, either an epoxy cresol novolak or a polyepoxy resin, is also added to the resin system. To this resin system is added about 0.1 to about 15 parts by weight per 100 parts of resin of a cationic photoinitiator capable of initiating polymerization of said epoxidized resin system upon exposure to actinic radiation; the system being further characterized by having an absorbance of light in the 330 to 700 nm region of less than 0.1 for a 2.0 mil thick film. Optionally a photosensitizer such as perylene and its derivatives or anthracene and its derivatives may be added.
摘要:
Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organo-silicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.
摘要:
Provided are novel symmetrical and asymmetrical bifunctional photodecomposable bases (PDBs) with dicarboxylate anion groups that show increased imaging performance. Also provided are photoresist compositions prepared with the bifunctional dicarboxylated PDBs and lithography methods that use the photoresist compositions of the present invention.
摘要:
Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.