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    SPUTTER CHAMBER FOR COATING A SUBSTRATE
    1.
    发明申请
    SPUTTER CHAMBER FOR COATING A SUBSTRATE 审中-公开
    用于涂覆基材的喷射室

    公开(公告)号：US20070227882A1

    公开(公告)日：2007-10-04

    申请号：US11692868

    申请日：2007-03-28

    申请人： Roland Trassl ,  Michael Geisler ,  Albert Kastner

    发明人： Roland Trassl ,  Michael Geisler ,  Albert Kastner

    IPC分类号： C23C14/00

    CPC分类号： H01J37/3244 ,  H01J37/34 ,  H01J37/347 ,  H01J2237/3325

    摘要： The invention relates to a sputter chamber for coating substrates, in which the so-called “picture frame effect” is eliminated or at least largely reduced. The thickness of the coating at the margin of a substrate hereby no longer deviates significantly from the thickness of the coating in the center of the substrate. This is attained thereby that the negative effect of the process gas—or of several process gases—which is introduced into the sputter chamber is equalized by an additional inert or reactive gas. At the margins of the substrates to be coated and on the substrate side facing away from the cathode thus an additional gas stream is generated, which is directed counter to the process gas stream.

    摘要翻译： 本发明涉及一种用于涂覆基板的溅射室，其中所谓的“图像帧效应”被消除或至少大大降低。 衬底边缘处的涂层厚度不再显着偏离衬底中心涂层的厚度。 由此可以实现由引入到溅射室中的工艺气体或几种工艺气体的负面影响，由额外的惰性气体或反应性气体均衡。 在待涂覆的基底的边缘和背离阴极的基底侧上，产生另外的气流，其与工艺气体流相反。

    Coating installation
    2.
    发明申请
    Coating installation 审中-公开
    涂装安装

    公开(公告)号：US20050145487A1

    公开(公告)日：2005-07-07

    申请号：US10511389

    申请日：2003-04-11

    申请人： Michael Geisler ,  Albert Kastner ,  Bernd Szyszka ,  Andreas Pflug ,  Niels Malkomes

    发明人： Michael Geisler ,  Albert Kastner ,  Bernd Szyszka ,  Andreas Pflug ,  Niels Malkomes

    IPC分类号： C25B9/00 ,  H01J37/34

    CPC分类号： H01J37/34 ,  H01J37/3447

    摘要： The invention relates to a coating installation comprising a recipient (1) which is divided into a cathode side (3) and a substrate side (4) by means of a screen (2). The cathode side (3) and the substrate side (4) respectively have a direct extraction outlet (10, 16) and a gas admission (8, 14). The gas admission (8) on the cathode side (3) is connected to a process gas source (9) and the gas admission (14) for the substrate side (4) is connected to a reactive gas source (15).

    摘要翻译： 本发明涉及一种涂层装置，其包括借助于屏幕（2）被分为阴极侧（3）和基板侧（4）的接收器（1）。 阴极侧（3）和基板侧（4）分别具有直接提取出口（10,16）和气体入口（8,14）。 阴极侧（3）上的气体进入（8）连接到处理气体源（9），并且用于基板侧（4）的气体进入（14）连接到反应气体源（15）。

    METHOD AND DEVICE FOR PLASMA TREATMENT OF A FLAT SUBSTRATE
    4.
    发明申请
    METHOD AND DEVICE FOR PLASMA TREATMENT OF A FLAT SUBSTRATE 审中-公开
    用于等离子体处理平板基板的方法和装置

    公开(公告)号：US20120097641A1

    公开(公告)日：2012-04-26

    申请号：US13127497

    申请日：2009-11-04

    申请人： Rudolf Beckmann ,  Michael Geisler ,  Arndt Zeuner ,  Marks Fiedler ,  Gunter Grabosch ,  Andreas Pflug ,  Uwe Czarnetzki ,  Ralf-Peter Brinkmann ,  Michael Siemers

    发明人： Rudolf Beckmann ,  Michael Geisler ,  Arndt Zeuner ,  Marks Fiedler ,  Gunter Grabosch ,  Andreas Pflug ,  Uwe Czarnetzki ,  Ralf-Peter Brinkmann ,  Michael Siemers

    IPC分类号： B44C1/22 ,  C23C16/50

    CPC分类号： H01J37/32165 ,  H01J37/32091

    摘要： Method and device for the plasma treatment of a substrate in a plasma device, wherein—the substrate (110) is arranged between an electrode (112) and a counter-electrode (108) having a distance d between a surface area of the substrate to be treated and the electrode, —a capacitively coupled plasma discharge is excited, forming a DC self-bias between the electrode (112) and the counter-electrode (108), —in an area of the plasma discharge between the surface area to be treated and the electrode having a quasineutral plasma bulk (114), a quantity of at least one activatable gas species, to which a surface area of the substrate to be treated is subjected, is present —it is provided that a plasma discharge is excited, —wherein the distance d has a value comparable to s=se+sg, where se denotes a thickness of a plasma boundary layer (119) in front of the electrode, and sg denotes a thickness of a plasma boundary layer (118) in front of the substrate surface to be treated or —wherein the quasineutral plasma bulk (114) between the surface area to be treated and the electrode has a linear extension dp, where dp

    摘要翻译： 用于等离子体装置中的基板的等离子体处理的方法和装置，其中 - 所述基板（110）布置在电极（112）和相对电极（108）之间，所述电极与对电极（108）之间的距离为d， 并且电极 - 电容耦合等离子体放电被激发，在电极（112）和对电极（108）之间形成DC自偏压，在等离子体放电的面积为 存在电极，其具有准中等离子体体积（114），一定量的待处理衬底的表面积经受的至少一种可活化气体种类，其条件是等离子体放电被激发， - 其中距离d具有与s = se + sg相当的值，其中se表示电极前面的等离子体边界层（119）的厚度，sg表示前面的等离子体边界层（118）的厚度 的待处理基材表面或其中 在待处理表面积和电极之间的准中性等离子体体积（114）中具有线性延伸dp，其中dp <1dd，dp

    Apparatus for the production of glow discharge
    6.
    发明授权
    Apparatus for the production of glow discharge 失效
    用于产生辉光放电的设备

    公开(公告)号：US5296784A

    公开(公告)日：1994-03-22

    申请号：US795988

    申请日：1991-11-22

    申请人： Michael Geisler ,  Michael Jung ,  Rudolf Koetter-Faulhaber

    发明人： Michael Geisler ,  Michael Jung ,  Rudolf Koetter-Faulhaber

    IPC分类号： H05H1/46 ,  H05H7/18 ,  H01J7/24

    CPC分类号： H01J37/32229 ,  H01J37/32247 ,  H01J37/3266 ,  H05H1/46 ,  H05H7/18

    摘要： Apparatus for the production of glow discharge, preferably for a large-area plasma CVD process, including a vacuum coating chamber (K) and a microwave waveguide resonator with one or more coupling points, wherein the resonator is made in the form of a microwave waveguide ring resonator (13, 13'), reaction zones (R) are formed at the coupling points between the microwave waveguide ring resonator (13, 13') and the vacuum chamber (K), and in each case a series of magnets (5, 5', . . . ; 6, 6', . . . ) of different polarity are provided, so that in front of the reaction zone (R) individual tunnels of magnetic field lines (16, 16') running parallel thereto are formed and each magnetic field (16, 16') encloses a spatially uniform plasma tube (17) in the reaction zone (R).

    摘要翻译： 用于产生辉光放电的装置，优选用于大面积等离子体CVD工艺，包括具有一个或多个耦合点的真空涂覆室（K）和微波波导谐振器，其中所述谐振器以微波波导的形式 环形谐振器（13,13'），在微波波导环形谐振器（13,13'）和真空室（K）之间的耦合点处形成反应区域（R），并且在每种情况下形成一系列磁体（5 ，5'，...，6，6'，...），使得在反应区（R）的前面与其平行延伸的磁场线（16,16'）的各个通道是 并且每个磁场（16,16'）在反应区域（R）中包围空间上均匀的等离子体管（17）。

    Sputtering cathode based on the magnetron principle
    7.
    发明授权
    Sputtering cathode based on the magnetron principle 失效
    基于磁控管原理的溅射阴极

    公开(公告)号：US4933064A

    公开(公告)日：1990-06-12

    申请号：US126776

    申请日：1987-11-30

    申请人： Michael Geisler ,  Jorg Kieser ,  Reiner Kukla

    发明人： Michael Geisler ,  Jorg Kieser ,  Reiner Kukla

    IPC分类号： C23C14/36 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34

    CPC分类号： H01J37/3423 ,  H01J37/3408 ,  H01J37/3426 ,  H01J37/3452

    摘要： A sputtering cathode for the coating of substrates. The cathode has a base, a target of nonmagnetic material, and a magnet system having exposed pole faces for the production of a tunnel of magnetic lines of force overarching the sputtering surface. The target is provided with at least two continuous projections lying one inside the other, which contain at least one sputtering surface between them, and have confronting wall surfaces. The pole faces are located on both sides of the projections and sputtering surface between them such that magnetic lines of force issue perpendicularly from the one wall surface and, after crossing the sputtering surface, re-enter perpendicularly the opposite wall surface. The magnet system has permanent magnets magnetized parallel to the projections, which are yoked together on the sides facing away from the projections by a soft-magnetic base, and are provided on the sides facing the projections with soft-magnetic pole shoes extending over at least a part of the height of the projections.

    摘要翻译： 用于涂覆基材的溅射阴极。 阴极具有基极，非磁性材料的靶，以及具有暴露极面的磁体系统，用于产生覆盖溅射表面的磁力线的隧道。 目标设置有至少两个连续的突起，一个在另一个内部，其在它们之间包含至少一个溅射表面，并且具有面对的壁表面。 极面位于突起的两侧并且在它们之间的溅射表面，使得磁力线从一个壁表面垂直地发生，并且在穿过溅射表面之后，垂直地重新进入相​​对的壁表面。 磁体系统具有平行于凸起磁化的永久磁体，它们通过软磁性底座在背对凸起的侧面上一起被钩住，并且在面向突出部的侧面上设置有至少延伸的软磁极靴 投影高度的一部分。

    CLEANING OF A PROCESS CHAMBER
    8.
    发明申请
    CLEANING OF A PROCESS CHAMBER 审中-公开
    过程室的清洁

    公开(公告)号：US20120180810A1

    公开(公告)日：2012-07-19

    申请号：US13386711

    申请日：2010-05-28

    申请人： Rudolf Beckmann ,  Michael Geisler ,  Harald Rost

    发明人： Rudolf Beckmann ,  Michael Geisler ,  Harald Rost

    IPC分类号： B08B7/00 ,  B05C5/00

    CPC分类号： C23C16/4405 ,  B08B7/0071 ,  H01J37/32862

    摘要： A method for cleaning at least one component arranged in the inner region of a plasma process chamber using a cleaning gas including fluorine gas, where the process chamber has at least one electrode and counter-electrode for generating a plasma for plasma treatment, where the inner region is exposed to gaseous fluorine compounds with a partial pressure of greater than 5 mbar, where the process chamber has at least one electrode and counter-electrode for generating a plasma, and the fluorine gas is thermally activated by means of a temperature-regulating means, where the component to be cleaned has a temperature of

    摘要翻译： 一种使用包括氟气的清洁气体来清洁布置在等离子体处理室的内部区域中的至少一个部件的方法，其中处理室具有用于产生等离子体处理的等离子体的至少一个电极和对电极，其中内部 区域暴露于分压大于5毫巴的气态氟化合物，其中处理室具有至少一个用于产生等离子体的电极和对电极，并且氟气通过温度调节装置 ，其中待清洁的组分具有<350℃的温度。