摘要:
A force microscope for the detection of forces in the sub-micronewton range has a measurement head which is used to carry out a relative movement with respect to a sample holder and to which a carrier molecule is attached on which probe molecules are placed.
摘要:
A force microscope for the detection of forces in the sub-micronewton range has a measurement head which is used to carry out a relative movement with respect to a sample holder and to which a carrier molecule is attached on which probe molecules are placed.
摘要:
Method and device for the plasma treatment of a substrate in a plasma device, wherein—the substrate (110) is arranged between an electrode (112) and a counter-electrode (108) having a distance d between a surface area of the substrate to be treated and the electrode, —a capacitively coupled plasma discharge is excited, forming a DC self-bias between the electrode (112) and the counter-electrode (108), —in an area of the plasma discharge between the surface area to be treated and the electrode having a quasineutral plasma bulk (114), a quantity of at least one activatable gas species, to which a surface area of the substrate to be treated is subjected, is present —it is provided that a plasma discharge is excited, —wherein the distance d has a value comparable to s=se+sg, where se denotes a thickness of a plasma boundary layer (119) in front of the electrode, and sg denotes a thickness of a plasma boundary layer (118) in front of the substrate surface to be treated or —wherein the quasineutral plasma bulk (114) between the surface area to be treated and the electrode has a linear extension dp, where dp
摘要:
The invention relates to a coating installation comprising a recipient (1) which is divided into a cathode side (3) and a substrate side (4) by means of a screen (2). The cathode side (3) and the substrate side (4) respectively have a direct extraction outlet (10, 16) and a gas admission (8, 14). The gas admission (8) on the cathode side (3) is connected to a process gas source (9) and the gas admission (14) for the substrate side (4) is connected to a reactive gas source (15).
摘要:
Apparatus for the production of glow discharge, preferably for a large-area plasma CVD process, including a vacuum coating chamber (K) and a microwave waveguide resonator with one or more coupling points, wherein the resonator is made in the form of a microwave waveguide ring resonator (13, 13'), reaction zones (R) are formed at the coupling points between the microwave waveguide ring resonator (13, 13') and the vacuum chamber (K), and in each case a series of magnets (5, 5', . . . ; 6, 6', . . . ) of different polarity are provided, so that in front of the reaction zone (R) individual tunnels of magnetic field lines (16, 16') running parallel thereto are formed and each magnetic field (16, 16') encloses a spatially uniform plasma tube (17) in the reaction zone (R).
摘要:
A sputtering cathode for the coating of substrates. The cathode has a base, a target of nonmagnetic material, and a magnet system having exposed pole faces for the production of a tunnel of magnetic lines of force overarching the sputtering surface. The target is provided with at least two continuous projections lying one inside the other, which contain at least one sputtering surface between them, and have confronting wall surfaces. The pole faces are located on both sides of the projections and sputtering surface between them such that magnetic lines of force issue perpendicularly from the one wall surface and, after crossing the sputtering surface, re-enter perpendicularly the opposite wall surface. The magnet system has permanent magnets magnetized parallel to the projections, which are yoked together on the sides facing away from the projections by a soft-magnetic base, and are provided on the sides facing the projections with soft-magnetic pole shoes extending over at least a part of the height of the projections.
摘要:
A method for cleaning at least one component arranged in the inner region of a plasma process chamber using a cleaning gas including fluorine gas, where the process chamber has at least one electrode and counter-electrode for generating a plasma for plasma treatment, where the inner region is exposed to gaseous fluorine compounds with a partial pressure of greater than 5 mbar, where the process chamber has at least one electrode and counter-electrode for generating a plasma, and the fluorine gas is thermally activated by means of a temperature-regulating means, where the component to be cleaned has a temperature of
摘要:
The invention relates to a coating for temperable substrates, in particular of glass panes. This coating comprises for example directly on the substrate an Si3N4 layer, thereon a CrN layer, thereon a TiO2 layer and lastly an Si3N4 layer.
摘要翻译:本发明涉及一种用于可调节基材,特别是玻璃板的涂层。 该涂层例如直接在衬底上包含Si 3 N 4层,其上具有CrN层,其上具有TiO 2层,最后包括Si 3 N 4层。
摘要:
The invention relates to an infrared radiation reflecting layer system for panes of glass and similar, the properties of said layer system being maintained even after heat treatment, for example, for bending or hardening the panes of glass. Silver is used as the infrared radiation reflecting layer. A combination of NiCrOx and Zn(Al)Ox is used as a lower-layer blocker for the silver. Also, a stoichiometric layer is also used as a pre-blocker layer. A specific work point is selected for a first dielectric layer of TiOxNy. Harmonisation of the thickness of the layers and the degrees of oxidation of NiCrOx and ZnAlOx as double lower-layer blockers and the work point of the TiOxNy-base layer are important for the temperability of the coating.
摘要:
A method for coating substrates in inline installations, in which a substrate is moved through at least one coating chamber and during this movement is coated. In this method, first, a model of the coating chamber is formed which takes into consideration the changes of the chamber parameters caused by the movement of the substrate through the coating chamber. Subsequently, the particular position of the substrate within the coating chamber is acquired. The chamber parameters are subsequently set based on the position of the substrate according to the model of the coating chambers.