摘要:
A carrier board structure with a semiconductor chip embedded therein and a method for fabricating the same are proposed. A rectangular cavity is formed at a predetermined position of the carrier board, and at least a breach is formed at a corner of the rectangular cavity, wherein the breach is composed of a plurality of drilling holes. Thus, the breach is capable of providing the rectangular cavity with a larger space for receiving a semiconductor chip in the rectangular cavity, when in the process of disposing the semiconductor chip into the rectangular cavity.
摘要:
A semiconductor chip is disclosed, which comprises a chip having an active surface; plural electrode pads disposed on the active surface of the chip; a first passivation layer disposed on the chip, which has openings corresponding to the electrode pads to expose the electrode pads, wherein the first passivation layer is made of a material having high alkali resistance and low coefficient of elasticity; and plural metal bumps disposed in the openings of the first passivation layer. Therefore, as forming the metal bumps by a chemical deposition technique, the damage to the passivation layer can be prevented. Besides, as the semiconductor chip is embedded in a package structure, the problem of delamination occurred due to the mismatch in the coefficients of thermal expansion of the semiconductor chip and the dielectric layers can be avoided. Accordingly, the yield of the package structure having the semiconductor chip embedded therein can be improved.
摘要:
The present invention provides a circuit board structure with an embedded semiconductor chip and a method for fabricating the same. The circuit board structure includes a carrier board having a first surface, a second surface, and a through hole penetrating the carrier board from the first surface to the second surface; a semiconductor chip having an active surface whereon a plurality of electrode pads are formed and a non-active surface, embedded in the through hole; a photosensitive first dielectric layer formed on the first surface of the carrier board and an opening formed thereon to expose the non-active surface of the semiconductor chip; a photosensitive second dielectric layer formed on the second surface of the carrier board and the active surface of the semiconductor chip.
摘要:
The present invention relates to a packaging substrate and a method for manufacturing the same. The packaging substrate comprises: a substrate body, wherein a surface thereof has a circuit layer comprising a plurality of circuits and a plurality of conductive pads, and the conductive pads are higher than the circuits; and an insulating protection layer disposed on the surface of the substrate body, wherein the insulating protection layer has a plurality of openings exposing the conductive pads, and the size of the openings is larger than or equal to that of the conductive pads. Accordingly, the packaging substrate structure of the present invention can be employed in a flip-chip packaging structure of fine-pitch.
摘要:
The present invention provides a circuit board structure and a method of fabricating circuit board structure the same, the circuit board structure consisting of a carrier board having a first surface and an opposed second surface, the carrier board being formed with at least one through hole penetrating the first and second surfaces; a conductive pillar formed in the through hole by electroplating; and a first circuit layer and a second circuit layer respectively formed on the first and second surfaces of the carrier board, the first and second circuit layers being electrically connected to the two end portions of the conductive pillar, thereby reducing spacing between adjacent conductive pillars of the carrier board and achieving high density circuit layout.
摘要:
A circuit board structure and a method for fabricating the same are proposed. A substrate with a first circuit layer formed on at least one surface thereof is provided. A dielectric layer is formed on the surface of the substrate, and a plurality of first and second openings are formed in the dielectric layer, wherein the second openings expose electrical connection pads of the first circuit layer. A metal layer is formed on the surface of the dielectric layer and in the first and second openings. By removing the metal layer on the surface of the dielectric layer, a second circuit layer is formed in the second openings, and a conductive structure is formed in the second openings for electrical connection with the first circuit layer. The present invention improves the bonding strength between the circuit layer and the dielectric layer, and the ability of fabricating fine circuits.
摘要:
A circuit board structure with an embedded semiconductor element and a fabrication method thereof are disclosed according to the present invention. The circuit board structure comprises: a carrier board having a first surface, a second surface, and at least one through hole penetrating the carrier board from the first surface to the second surface; a first semiconductor element received in the through hole and having an active surface and an inactive surface, the active surface having a plurality of electrode pads; at least one second semiconductor element mounted on the carrier board; a first encapsulation layer formed on the first surface of the carrier board to block one end of the through hole; and a second encapsulation layer formed on the second surface of the carrier board.
摘要:
A package substrate and a method for fabricating the same are provided according to the present invention. The package substrate includes: a substrate body with a die attaching side and a ball implanting side lying opposite each other, having a plurality of wire bonding pads and a plurality of solder ball pads respectively, and having a first insulating passivation layer and a second insulating passivation layer respectively, wherein a plurality of first apertures and a plurality of second apertures are formed in the first insulating passivation layer and the second insulation passivation layer respectively to corresponding expose the wire bonding pads and the solder ball pads; a chemical plating metal layer formed on the wire bonding pads and solder ball pads respectively; and a wire bonding metal layer formed on a surface of the chemical plating metal layer of the wire bonding metal layer.
摘要:
A circuit board structure with embedded electronic components includes: a carrier board having an adhesive layer with two surfaces formed with first and second metal oxide layers covered by first and second metal layers and having at least one through hole; at least one semiconductor chip received in the through hole of the carrier board; an adhesive material filling a gap between the through hole and the semiconductor chip so as to secure the semiconductor chip in position to the through hole; a high dielectric material layer formed outwardly on the second metal layer; and at least one electrode board formed outwardly on the high dielectric material layer such that a capacitance component is formed with the second metal layer, high dielectric material layer, and electrode board. Accordingly, the capacitance component is integrated into the circuit board structure.
摘要:
A circuit board structure having an embedded semiconductor chip and a method for fabricating the same are disclosed. The circuit board structure includes: a carrier board formed with at least one through hole; a semiconductor chip received in the through hole of the carrier board, the semiconductor chip having an active surface and a non-active surface, wherein the active surface is provided with a plurality of electrode pads; a dielectric layer formed on surfaces of the carrier board and the semiconductor chip and formed with a plurality of openings for exposing the electrode pads of the semiconductor chip; and a composite circuit layer formed on the dielectric layer, including a thinned metal layer, conductive layer, and electroplated metal layer, and electrically connected to the electrode pads by conductive structures formed in the openings of the dielectric layer. Strong bonding provided by the composite circuit layer formed on the dielectric layer thus desirably reduces the warpage problem resulted from thermal effect.