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公开(公告)号：US20020074242A1
公开(公告)日：2002-06-20
申请号：US09977596
申请日：2001-10-13
IPC分类号： C25F005/00 , C25F001/00 , C30B030/02
CPC分类号： H01L21/76861 , C25D7/123 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76874
摘要： Disclosed is a method for repairing of seed layers by removal of oxidized metal from the seed layers prior to subsequent metallization. Also disclosed is a method for monitoring such repair to provide substantially metal oxide free seed layers.
摘要翻译： 公开了通过在随后的金属化之前从种子层去除氧化金属来修复种子层的方法。 还公开了一种用于监测这种修复以提供基本上无金属氧化物的种子层的方法。
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公开(公告)号：US20020043467A1
公开(公告)日：2002-04-18
申请号：US09976421
申请日：2001-10-12
IPC分类号： C25D007/12 , C25D011/32 , C25D003/38 , C25D005/52
摘要： Disclosed are electrolytes for copper electroplating that provide enhanced fill of small features with less overplate. Also disclosed are methods of plating substrates, such as electronic devices, using such electrolytes.
摘要翻译： 公开了用于铜电镀的电解质，其提供具有较少的超板的小特征的增强的填充。 还公开了使用这种电解质电镀衬底（例如电子器件）的方法。
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公开(公告)号：US20020053519A1
公开(公告)日：2002-05-09
申请号：US10003151
申请日：2001-11-02
IPC分类号： C25D005/52 , C25D003/00 , C25D003/38 , C25D005/10
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/52 , H01L21/288 , H01L21/76843 , H01L21/76873 , H01L2221/1089 , H05K3/24 , Y10T428/12493
摘要： Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices. Also disclosed are electronic devices containing substantially continuous seed layers.
摘要翻译： 公开了在电子设备的制造期间在随后的金属化之前修复种子层的方法。 还公开了包含基本上连续的种子层的电子装置。
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公开(公告)号：US20020043468A1
公开(公告)日：2002-04-18
申请号：US09976422
申请日：2001-10-12
IPC分类号： C25D011/32 , C25D007/12 , C25D005/52 , C25D003/00 , C25D003/38
CPC分类号： C25D5/48 , C25D3/02 , C25D3/38 , C25D7/12 , C25D7/123 , H01L21/2885 , H01L21/76843 , H01L21/76868 , H01L21/76873 , H01L2221/1089
摘要： Disclosed are compositions useful for repair and electroplating of seed layers. Also disclosed are methods of repairing and electroplating such seed layers.
摘要翻译： 公开了可用于种子层的修复和电镀的组合物。 还公开了修复和电镀这种种子层的方法。
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公开(公告)号：US20040130032A1
公开(公告)日：2004-07-08
申请号：US10669864
申请日：2003-09-24
IPC分类号： H01L021/44 , H01L023/48
CPC分类号： H01L21/76843 , H01L21/288 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L21/76829 , H01L21/76835 , H01L21/76849 , H01L21/76874 , H01L23/5222 , H01L23/5329 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A method for manufacturing electronic devices using multiple layers of pre-porous dielectric materials that are made porous subsequent to etching and metal filling of apertures is provided. The pre-porous layers may be made porous sequentially or during a single processing step. Such pre-porous dielectric layers are selected not only to provide low dielectric constants after being made porous, but also to provide a difference in etch rates. Structures having such multiple layers of pre-porous dielectric layers are also provided.
摘要翻译： 提供了一种制造使用多层预孔介电材料的电子器件的方法，其在蚀刻和孔的金属填充之后被制成多孔的。 可以将预多孔层顺序地或在单个加工步骤中制成多孔层。 选择这样的预多孔电介质层不仅在制成多孔之后提供低介电常数，而且还提供蚀刻速率的差异。 还提供了具有这种多层预多孔介电层的结构。
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公开(公告)号：US20040052948A1
公开(公告)日：2004-03-18
申请号：US10453300
申请日：2003-06-03
IPC分类号： B05D003/00
CPC分类号： H01L21/02137 , H01L21/02203 , H01L21/02282 , H01L21/02343 , H01L21/02362 , H01L21/3122
摘要： Treatment procedures for organic polysilica layers are provided that improve the adhesion of layers of material that are subsequently applied to the treated organic polysilica layers. In particular, layers of organic polymeric material have improved adhesion to such treated organic polysilica layers. These treatment procedures are particularly useful in the manufacture of electronic devices, such as integrated circuits, wherein the organic polysilica layers are used as dielectric materials, cap layers, etch stops and the like.
摘要翻译： 提供了有机聚硅氧烷层的处理方法，其改善随后施加到经处理的有机聚硅酸层的材料层的粘附性。 特别地，有机聚合物材料层具有改善的对这种经处理的有机聚硅氧烷层的粘合性。 这些处理方法在制造诸如集成电路的电子器件中是特别有用的，其中有机聚硅酸层用作介电材料，盖层，蚀刻停止点等。
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公开(公告)号：US20040137728A1
公开(公告)日：2004-07-15
申请号：US10661051
申请日：2003-09-13
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： B81B7/0006 , B81B2203/0315 , B81C2201/0108 , H01L21/764 , H01L21/7682 , H01L23/5222 , H01L2924/0002 , Y10T428/24628 , H01L2924/00
摘要： A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an electronic device such as an electrical interconnect structure. Structures containing air gaps are also provided.
摘要翻译： 提供了一种在固体结构内形成气隙的方法。 在该方法中，牺牲材料被覆盖层覆盖。 然后通过覆盖层去除牺牲材料以留下空隙。 这种气隙特别适用于诸如电互连结构的电子设备中的金属线之间的绝缘。 还提供了包含气隙的结构。
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公开(公告)号：US20020060157A1
公开(公告)日：2002-05-23
申请号：US10046507
申请日：2001-10-19
IPC分类号： C25D005/00 , C25D021/12 , C25C007/00 , C25D017/00
CPC分类号： C25D21/14 , C25D21/12 , Y10T436/24
摘要： Disclosed is a method of analyzing components in an electroplating bath. Also disclosed is a method of controlling electroplating baths by monitoring the components of the plating bath in real-time.
摘要翻译： 公开了一种分析电镀浴中的组分的方法。 还公开了通过实时监测电镀液的成分来控制电镀槽的方法。
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公开(公告)号：US20020000382A1
公开(公告)日：2002-01-03
申请号：US09738551
申请日：2000-12-15
发明人： Denis Morrissey , David Merricks , Leon R. Barstad , Eugene N. Step , Jeffrey M. Calvert , Robert A. Schetty III , James G. Shelnut , Mark Lefebvre , Martin W. Bayes , Donald E. Storjohann
IPC分类号： C25D005/00 , C25D003/38 , C25D005/48 , C25D005/34 , B32B015/04 , H01L021/44
CPC分类号： C25D3/38 , C25D5/34 , C25D7/123 , H01L21/76861 , H01L21/76868 , H01L21/76873
摘要： Disclosed are methods of repairing metal seed layers prior to subsequent metallization. Such repair methods provide metal seed layers disposed on a substrate that are substantially free of metal oxide and substantially free of discontinuities.
摘要翻译： 公开了在随后的金属化之前修复金属种子层的方法。 这种修复方法提供了设置在基底上的金属种子层，其基本上不含金属氧化物并且基本上没有不连续性。
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公开(公告)号：US20040033700A1
公开(公告)日：2004-02-19
申请号：US10453337
申请日：2003-06-03
发明人： Dana A. Gronbeck , Michael K. Gallagher , Jeffrey M. Calvert , Gregory P. Prokopowicz , Timothy G. Adams
IPC分类号： H01L021/469 , H01L021/4763 , H01L021/31
CPC分类号： H01L21/02126 , C09D183/04 , C09D183/14 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249987
摘要： Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.
摘要翻译： 提供了沉积均匀的针孔缺陷有机聚硅氧烷涂层的方法。 这些方法允许在制造集成电路中使用这些材料作为旋涂帽层。
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