摘要:
Each of a pair of signal terminals (TC+ and TC−) includes a signal terminal link portion (uCON) that links a first signal terminal end portion (u1) and a second signal terminal end portion (u2). A ground terminal (TGC) includes a ground terminal link portion (tCON) that links a first ground terminal end portion (t1) and a second ground terminal end portion (t2). The ground terminal link portion (tCON) is wired between the signal terminal link portion (uCON) and a mounting surface (11A) from the opposite side of the mounting surface (11A) relative to the signal terminal link portion (uCON).
摘要:
A method for producing a cadmium negative electrode for alkaline batteries according to the present invention comprises a step of obtaining a cadmium active-substance impregnated electrode plate by impregnating said electrode substrate with a cadmium active substance; and a step of adding polyethylene glycol for forming a polyethylene glycol coating on the surface of said cadmium negative electrode or on the surface of said active substance by coating or impregnating said active-substance impregnated electrode with polyethylene glycol.
摘要:
A rolling bearing unit comprising a rotatable race having an inner peripheral surface formed with an outer ring raceway and an outer peripheral surface formed with a rotating flange, a stationary race having an outer peripheral surface formed with an inner ring raceway, a plurality of rolling members between the outer ring raceway and the inner ring raceway, an annular encoder of multi-pole magnet supported in a concentric relation with the rotatable race to have characteristics alternately changed with a uniform interval in the circumferential direction and having an outer diameter larger than the outer diameter of the rotatable race, and a metal ring for supporting the encoder onto the rotatable race and having a cylindrical portion provided to enclose the encoder.
摘要:
On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purl fled, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.
摘要翻译:在GaAs衬底(AlYGa1-Y)上,形成与衬底晶格匹配的0.5In0.5P晶体层(0≤Y≤1)。 通过在层叠基板的加热的同时将As分子束照射到晶体层中的In蒸发的温度,将结晶层的表面附近的部分变更为AlYGa1-YAs晶体层(0 < / = Y <1),其上形成有AlXGa1-XAs晶体层(0≤X≤1)的几个分子的厚度。 由于AlYGa1-YAs晶体层的表面已经被剥离,所形成的AlXGa1-XAs晶体层具有高结晶度,从而能够以高效率制造发光二极管,半导体激光器件等。
摘要:
A normally operable decoder circuit is obtained without entailing a delay in decoding operation, an increase in circuit area, and an increase in circuit design cost. An NMOS transistor in a high-voltage circuit portion is inserted between the output of a NAND gate and a node, and receives an input signal at the gate electrode thereof. A load current generating portion in the high-voltage circuit portion includes PMOS transistors coupled in series between a high power supply voltage and the node. One of the PMOS transistor receives a control signal at the gate electrode thereof. The other PMOS transistor receives a control signal at the gate electrode thereof. An inverter receives a signal obtained from the node as an input signal, and outputs the inverted signal thereof as an output signal.
摘要:
A normally operable decoder circuit is obtained without entailing a delay in decoding operation, an increase in circuit area, and an increase in circuit design cost. An NMOS transistor in a high-voltage circuit portion is inserted between the output of a NAND gate and a node, and receives an input signal at the gate electrode thereof. A load current generating portion in the high-voltage circuit portion includes PMOS transistors coupled in series between a high power supply voltage and the node. One of the PMOS transistor receives a control signal at the gate electrode thereof. The other PMOS transistor receives a control signal at the gate electrode thereof. An inverter receives a signal obtained from the node as an input signal, and outputs the inverted signal thereof as an output signal.
摘要:
A combination seal ring with an encoder for use to close off the opening of the space between a fixed ring and a rotational ring and to detect a rotational speed of the rotational ring, comprising a seal ring secured to the fixed ring, a metal slinger secured to the rotational ring, and an encoder of a rubber magnet secured to the slinger, the seal ring comprising a metal core secured to the fixed ring, and a fixed ring portion bent toward the rotational ring from the fixed cylindrical portion; and a resilient member bonded all around the metal core, the slinger comprising a rotational cylindrical portion secured to the rotational ring, and a rotational ring portion bent toward the fixed ring from the rotational cylindrical portion, the encoder bonded on the rotational circular ring portion, opposite to the seal lips by a molding process, the end rim of the encoder being short at least 0.2 mm of the end rim of the rotational circular ring portion.
摘要:
A semiconductor memory device includes an inner circuit. The inner circuit includes a command user interface, a logical circuit and a pad. Based upon an externally input fixing command, the command user interface outputs signals A and B with H or L level. Upon receipt of the signal A of H level and the signal B of L level, the logical circuit outputs a fixed logical signal of H level independent of the signal received from the pad, and upon receipt of the signal A of L level and the signal B of H level, outputs a fixed logical signal of L level independent of the signal received from the pad. Thus, it becomes possible to carry out a high-quality testing operation even when the number of the test pins of a test device is smaller than the number of address pins or data pins of a semiconductor memory device.
摘要:
A polyamide resin composition comprising a polyamide and an alkaline earth metal compound, wherein the amount of a cyclic monomer formed by melting said composition under the conditions of a moisture content of 0.02% by weight or less, at 0.01 Torr or below, at 250.degree. C., and for 8 hours is not more than 0.7 parts by weight per 100 parts by weight of the polyamide; and fibers, films and molded articles with the use of the same.
摘要:
A semiconductor device comprising a (111)B single-crystalline semiconductor substrate which is misoriented toward (110), and epitaxial layers grown on the substrate by molecular beam epitaxy, whereby the crystallinity and luminescence efficiency of epitaxial layers are significantly improved.