公开(公告)号：US11152543B2

公开(公告)日：2021-10-19

申请号：US16761090

申请日：2017-11-22

申请人： Soko Kagaku Co., Ltd.

发明人： Akira Hirano ,  Yosuke Nagasawa

IPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L33/00

摘要： The nitride semiconductor light-emitting element comprises a light-emitting element structure portion having a plurality of nitride semiconductor layers including at least an n-type layer, an active layer and a p-type layer. The active layer has a quantum well structure comprising at least one well layer composed of a GaN-based semiconductor. In the well layer, the shortest distance between a first surface on the n-type layer side and a second surface on the p-type layer side varies in an orthogonal plane to the layering direction of the nitride semiconductor layers, and the peak emission wavelength of light emitted from the light-emitting element structure portion is shorter than 354 nm.

公开(公告)号：US09972758B2

公开(公告)日：2018-05-15

申请号：US14916992

申请日：2014-09-10

申请人： Soko Kagaku. Co., Ltd.

发明人： Kiho Yamada ,  Shoko Nagai ,  Yuta Furusawa ,  Akira Hirano ,  Masamichi Ippommatsu

IPC分类号： H01L33/56 ,  C08F32/04 ,  H01L33/54

CPC分类号： H01L33/56 ,  C08F32/04 ,  H01L33/54 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

摘要： An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin. The ultraviolet light emitting device is an ultraviolet light emitting device including: an ultraviolet light emitting element (2) composed of a nitride semiconductor; and an ultraviolet-transparent sealing resin (3) covering the ultraviolet light emitting element (2), wherein at least a specific portion (3a) of the sealing resin (3), which is in contact with pad electrodes (16) and (17) of the ultraviolet light emitting element (2), is a first type amorphous fluororesin, a terminal functional group of a polymer or a copolymer that forms the first type amorphous fluororesin is a COOH group or a COOR group which is a reactive terminal functional group bondable to a metal that forms the pad electrodes (16) and (17), and a light emission wavelength range in the ultraviolet light emitting element (2) exists on a longer-wavelength side as compared to the long-wavelength edge of an absorption wavelength range in the amorphous fluororesin.

公开(公告)号：US09556535B2

公开(公告)日：2017-01-31

申请号：US14765884

申请日：2014-08-29

申请人： SOKO KAGAKU CO., LTD.

发明人： Cyril Pernot ,  Akira Hirano

IPC分类号： H01L33/00 ,  C30B25/18 ,  C30B29/38 ,  H01L21/20 ,  H01L21/205 ,  H01L33/32 ,  C30B29/40 ,  C30B31/08 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01S5/02 ,  H01S5/323

CPC分类号： C30B25/183 ,  C30B29/38 ,  C30B29/406 ,  C30B31/08 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/20 ,  H01L21/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04

摘要： The present invention provides a method for producing a template for epitaxial growth, the method including: a surface treatment step of dispersing Ga atoms on a surface of a sapphire substrate; and an AlN growth step of epitaxially growing an AlN layer on the sapphire substrate, wherein in a Ga concentration distribution in a depth direction perpendicular to the surface of the sapphire substrate in an internal region of the AlN layer excluding a near-surface region up to a depth of 100 nm from the surface of the AlN layer, which is obtained by secondary ion mass spectrometry, a position in the depth direction where the Ga concentration takes the maximum value is present in a near-interface region located between the interface of the sapphire substrate and a position at 400 nm spaced apart from the interface to the AlN layer side, and the maximum value of the Ga concentration is 3×1017 atoms/cm3 or more and 2×1020 atoms/cm3 or less.

摘要翻译： 本发明提供一种外延生长用模板的制造方法，其特征在于，包括：在蓝宝石基板的表面分散Ga原子的表面处理工序; 以及在蓝宝石衬底上外延生长AlN层的AlN生长步骤，其中在AlN层的内部区域中垂直于蓝宝石衬底的表面的深度方向的Ga浓度分布，除了近表面区域 通过二次离子质谱法获得的AlN层的表面的深度为100nm，Ga浓度达到最大值的深度方向的位置存在于位于 蓝宝石衬底和与AlN层侧的界面间隔开的400nm的位置，Ga浓度的最大值为3×10 17原子/ cm 3以上且2×10 20原子/ cm 3以下。

公开(公告)号：US09502606B2

公开(公告)日：2016-11-22

申请号：US15140300

申请日：2016-04-27

申请人： SOKO KAGAKU CO., LTD.

发明人： Cyril Pernot ,  Akira Hirano

IPC分类号： H01L33/32 ,  H01L21/20 ,  H01L33/12 ,  H01L33/00 ,  H01L33/16 ,  H01L33/06 ,  H01L33/24 ,  H01L33/18 ,  H01L21/02 ,  H01L33/38

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38

摘要： A nitride semiconductor ultraviolet light-emitting element is provided with: an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on the substrate; and a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, formed on the underlying structure portion. The (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and is equal to or smaller than 3.0°, and an AlN molar fraction of the n-type cladding layer is equal to or higher than 50%.

摘要翻译： 氮化物半导体紫外线发光元件设置有：底层结构部分，包括蓝宝石（0001）基板和形成在基板上的AlN层; 以及包括n型AlGaN基半导体层的n型包覆层，具有AlGaN基半导体层的有源层和p型AlGaN系半导体的p型包层的发光元件结构部分 层，形成在下面的结构部分上。 衬底的（0001）表面以等于或大于0.6°并且等于或小于3.0°的偏角倾斜，并且n型包覆层的AlN摩尔分数等于或等于 超过50％。

公开(公告)号：US10412829B2

公开(公告)日：2019-09-10

申请号：US15742190

申请日：2016-08-02

申请人： Soko Kagaku Co., Ltd. ,  AGC INC.

发明人： Akira Hirano ,  Ko Aosaki

IPC分类号： H05K1/11 ,  H05K1/03 ,  H05K3/28 ,  H01L33/32 ,  H01L33/62 ,  H05K1/09 ,  H05K3/00 ,  H05K3/40 ,  H05K3/46 ,  H01L33/56

摘要： To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, the present invention provides a base 10 that comprises an insulating base material 11 and two or more metal films 12 and 13 that are formed on one side of the insulating base material 11 and electrically separated from each other. The two or more metal films are formed to include an upper surface and a side wall surface that are covered by gold or a platinum group metal, to be capable of mounting thereon one or more nitride semiconductor light-emitting elements and the like, and to have, as a whole, a predetermined planar view shape including two or more electrode pads. On the one side of the base material 11, along a boundary line between an exposed surface of the base material 11 that is not covered by the metal film 12, 13 and a side wall surface of the metal film 12, 13, at least a first part of the exposed surface of the base material 11 continuous with the boundary line that is sandwiched between two adjacent electrode pads and the side wall surfaces of the metal films 12 and 13 that oppose to each other with the first part interposed therebetween are covered by a fluororesin film 16, and a part of an upper surface of the metal film 12, 13 that composes at least the electrode pad is not covered by the fluororesin film 16.

公开(公告)号：US10297715B2

公开(公告)日：2019-05-21

申请号：US15573824

申请日：2015-07-21

申请人： Soko Kagaku Co., Ltd.

发明人： Michiko Kaneda ,  Cyril Pernot ,  Akira Hirano

IPC分类号： H01L33/32 ,  H01L33/16 ,  H01L33/00 ,  H01L33/12 ,  H01L33/22 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24

摘要： A nitride semiconductor ultraviolet light-emitting element comprises an underlying portion that includes a substrate that is composed of sapphire and has a surface inclined to a (0001) surface so as to form a multi-step terrace, and an AlN layer formed on a surface of the substrate, and a light-emitting portion that is formed on a surface of the underlying portion and includes an active layer having an AlGaN based semiconductor layer. At least the AlN layer of the underlying portion, the active layer of the light-emitting portion, and each layer between the AlN layer and the active layer are formed by step flow growth in which a side surface of a multi-step terrace grows so as to achieve two-dimensional growth. The active layer has a quantum well structure including at least a well layer composed of AlGaN. The average roughness of a 25 μm by 25 μm region on a surface of the active layer is a thickness of the well layer or more and 10 nm or less.

公开(公告)号：US09450157B2

公开(公告)日：2016-09-20

申请号：US14416198

申请日：2014-04-17

申请人： Soko Kagaku Co., Ltd. ,  Asahi Glass Company, Limited

发明人： Kiho Yamada ,  Shoko Nagai ,  Yuta Furusawa ,  Akira Hirano ,  Masamichi Ippommatsu ,  Ko Aosaki ,  Naoki Morishima

IPC分类号： H01L33/56 ,  H01L33/32 ,  H01L33/62

CPC分类号： H01L33/56 ,  H01L33/32 ,  H01L33/62 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/8192

摘要： An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin. The ultraviolet light emitting device is an ultraviolet light emitting device including: an ultraviolet light emitting element (2) formed of a nitride semiconductor; and an ultraviolet-transparent sealing resin (3) covering the ultraviolet light emitting element (2), wherein at least a specific portion (3a) of the sealing resin (3), which is in contact with pad electrodes (18) and (17) of the ultraviolet light emitting element (2), is a first type amorphous fluororesin, and a terminal functional group of a polymer or a copolymer that forms the first type amorphous fluororesin is a nonreactive terminal functional group which is not bondable to a metal that forms the pad electrodes (16) and (17).

摘要翻译： 通过防止与紫外线发射操作相关联并由密封树脂引起的电特性的劣化来提供具有高质量和高可靠性的紫外线发射装置。 紫外光发射装置是一种紫外线发射装置，包括：由氮化物半导体形成的紫外线发光元件; 以及覆盖所述紫外线发光元件（2）的紫外线透明密封树脂（3），其中，至少与所述密封树脂（3）的特定部分（3a）接触，所述特定部分（3a）与焊盘电极（18）和（17 ）是第一种无定形氟树脂，形成第一类非晶态氟树脂的聚合物或共聚物的末端官能团是不与金属结合的非反应性末端官能团， 形成焊盘电极（16）和（17）。

公开(公告)号：US11165002B2

公开(公告)日：2021-11-02

申请号：US16630743

申请日：2017-08-30

申请人： Soko Kagaku Co., Ltd. ,  AGC INC.

发明人： Akira Hirano ,  Yosuke Nagasawa ,  Masamichi Ippommatsu ,  Ko Aosaki ,  Yuki Suehara ,  Yoshihiko Sakane

IPC分类号： H01L33/56 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62

摘要： A light-emitting device 1 comprises a base 30, a nitride semiconductor light-emitting element 10 flip-chip mounted on the base 30, and an amorphous fluororesin sealing the nitride semiconductor light-emitting element 10. The light-emitting device 1 comprises a deformation-prevention layer 60 for preventing a shape change of an amorphous fluororesin by heat treatment after shipment of the light-emitting device 1, and the deformation-prevention layer 60 is formed of a layer in which a thermosetting resin or an ultraviolet curing resin is cured, and the cured layer directly covers the surface of the amorphous fluororesin.

公开(公告)号：US11107961B2

公开(公告)日：2021-08-31

申请号：US16753714

申请日：2017-11-02

申请人： Soko Kagaku Co., Ltd. ,  AGC INC.

发明人： Akira Hirano ,  Yosuke Nagasawa ,  Masamichi Ippommatsu ,  Ko Aosaki ,  Yuki Suehara ,  Yoshihiko Sakane

IPC分类号： H01L33/58 ,  H01L33/00 ,  H01L33/32 ,  H01L33/56 ,  H01L33/62

摘要： The ultraviolet light-emitting device includes a base, a nitride semiconductor ultraviolet light-emitting element flip-chip mounted on the base, and a lens for sealing a nitride semiconductor ultraviolet light-emitting element to focus or diffuse light emitted from the nitride semiconductor ultraviolet light-emitting device. The lens is composed of an amorphous fluororesin in which a structural unit of a polymer or copolymer has a fluorine-containing aliphatic cyclic structure and a terminal functional group is a perfluoroalkyl group, and a density of the amorphous fluororesin is higher than 2.11 g/cm3.

公开(公告)号：US10388834B2

公开(公告)日：2019-08-20

申请号：US15736253

申请日：2016-08-02

申请人： Soko Kagaku Co., Ltd. ,  AGC INC.

发明人： Akira Hirano ,  Ko Aosaki

IPC分类号： H01L33/00 ,  H01L33/44 ,  H01L21/288 ,  H01L33/56 ,  H01L33/32 ,  H01L33/38

摘要： To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, there is provided a nitride semiconductor wafer having ultraviolet light-emitting elements on a substrate 12, each element including a semiconductor laminated portion 21 constituted by an n-type AlGaN layer 16, an active layer 17 composed of an AlGaN layer, and p-type AlGaN layers 19 and 20, an n-electrode 23, a p-electrode 22, a protective insulating film 24, first and second plated electrodes 25 and 26, and a fluororesin film 27. The p-electrode is formed on an upper surface of the p-type AlGaN layer in the first region R1 and the n-electrode is formed on an upper surface of the n-type AlGaN layer in the second region R2. The protective insulating film has openings for exposing at least parts of the n-electrode and the p-electrode. The first plated electrode is spaced apart from the second plated electrode, contacts the p-electrode, and covers an upper surface and an entire outer circumferential side surface of the first region R1 and a part of the second region R2 that contacts the first region R1. The second plated electrode contacts the n-electrode and the fluororesin film 27 covers side wall surfaces of the first and second plated electrodes and a bottom surface of a gap part 31.