公开(公告)号：US20050161683A1

公开(公告)日：2005-07-28

申请号：US11087680

申请日：2005-03-24

申请人： Hun Hahm ,  In Kim ,  Jeong Na ,  Seung Yoo ,  Young Park ,  Soo Lee

发明人： Hun Hahm ,  In Kim ,  Jeong Na ,  Seung Yoo ,  Young Park ,  Soo Lee

IPC分类号： H01L25/075 ,  H01L27/15 ,  H01L31/12 ,  H01L33/08 ,  H01L33/32 ,  H01L33/44 ,  H01L33/62

CPC分类号： H01L27/15 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  Y10S257/918 ,  H01L2924/00014

摘要： Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.

摘要翻译： 公开了一种白色发光二极管及其制造方法。 白色发光二极管包括具有透光性的导电性基板，其表面被划分为第一和第二区域; 第一发光单元，其包括在导电基板的第一区域处的第一覆盖层，第一有源区和第二覆盖层; 第二发光单元，包括第三覆盖层，将具有与从第一有源区域发射的光合成的波长的光发射到白光的第二有源区，以及在导电基板的第二区域处的第四覆盖层; 以及第一，第二和第三电极，连接到导电衬底的第二表面的第一电极，连接到第二覆盖层的第二电极和连接到第四覆盖层的第三电极。

公开(公告)号：US20050214965A1

公开(公告)日：2005-09-29

申请号：US11115237

申请日：2005-04-27

申请人： Young Park ,  Hun Hahm ,  Jeong Na ,  Seung Yoo

发明人： Young Park ,  Hun Hahm ,  Jeong Na ,  Seung Yoo

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/34

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L2221/68363

摘要： Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

公开(公告)号：US20050173692A1

公开(公告)日：2005-08-11

申请号：US10601597

申请日：2003-06-24

申请人： Young Park ,  Hun Hahm ,  Jeong Na ,  Seung Yoo

发明人： Young Park ,  Hun Hahm ,  Jeong Na ,  Seung Yoo

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/34

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L2221/68363

摘要： Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

摘要翻译： 公开了一种垂直GaN发光二极管及其制造方法。 垂直GaN发光二极管包括具有形成在其上的第一接触面的上表面的第一导电GaN包覆层，形成在第一导电GaN包层的下表面上的有源层，形成在第一导电GaN包覆层上的第二导电GaN包覆层 有源层的下表面，形成在第二导电GaN包覆层上的导电粘合剂层和形成在导电粘合剂层的下表面上的形成有第二接触的下表面的导电基板。 用于制造垂直GaN发光二极管的方法包括从发光结构去除蓝宝石衬底的步骤，以防止对结构的GaN单晶面的损坏。

公开(公告)号：US20050133795A1

公开(公告)日：2005-06-23

申请号：US10852437

申请日：2004-05-25

申请人： Young Park ,  Hun Hahm ,  Seung Yoo

发明人： Young Park ,  Hun Hahm ,  Seung Yoo

IPC分类号： H01L27/15 ,  H01L29/08 ,  H01L33/06 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62

CPC分类号： H01L27/156 ,  H01L33/08

摘要： A high power flip chip LED has an n-doped semiconductor layer formed on the sapphire substrate, with a plurality of first regions and a second region of intersecting lines for separating the first regions from each other. P-doped semiconductor layers are on the first regions of the n-doped semiconductor layer to form mesa structures. At least one pair of diagonal corners of the respective mesa structures are rounded inward to form first basins between adjacent inward-rounded corners. First metal layers are on the mesa structures in a same configuration. A second metal layer is on the second region of the n-doped semiconductor layer. First ohmic contacts are on the first metal layers. Second ohmic contacts are on the second metal layer in the first basins. The LED can prevent the current channeling to increase the luminous area while equalizing the current density area thereby generating high brightness light.

摘要翻译： 高功率倒装芯片LED具有形成在蓝宝石衬底上的n掺杂半导体层，具有多个第一区域和用于将第一区域彼此分离的相交线的第二区域。 P掺杂半导体层在n掺杂半导体层的第一区上，以形成台面结构。 相应台面结构的至少一对对角线向内倒圆，以在相邻的内圆角之间形成第一盆。 第一金属层在相同构型的台面结构上。 第二金属层位于n掺杂半导体层的第二区上。 第一个欧姆接触位于第一个金属层上。 第二个欧姆接触位于第一个盆地的第二个金属层上。 LED可以防止电流通道增加发光面积，同时均衡电流密度区域，从而产生高亮度光。

公开(公告)号：US20060079073A1

公开(公告)日：2006-04-13

申请号：US11235278

申请日：2005-09-27

申请人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

发明人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

IPC分类号： H01L21/20

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

公开(公告)号：US20050133812A1

公开(公告)日：2005-06-23

申请号：US10806432

申请日：2004-03-23

申请人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

发明人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L29/225

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

公开(公告)号：US20060034097A1

公开(公告)日：2006-02-16

申请号：US10953816

申请日：2004-09-30

申请人： Hun Hahm ,  Jung Park ,  Young Jeong ,  Young Park ,  Hyung Kim ,  Ho Ahn

发明人： Hun Hahm ,  Jung Park ,  Young Jeong ,  Young Park ,  Hyung Kim ,  Ho Ahn

IPC分类号： F21V7/04

CPC分类号： H01L33/58 ,  H01L33/54 ,  H01L33/60

摘要： The present invention relates to an LED lens, in which a planar bottom has a pair of halves symmetrically connected with each other about a reference line and narrowed in the vicinity of the reference line. A pair of substantially semicircular reflecting surfaces are extended from both edges of the bottom connected with both ends of the reference line. A radiating surface is connected with remaining edges of the bottom and semicircular edges of the reflecting surfaces. The reflecting surfaces reflect light beams are introduced from the LED chip through the bottom toward the radiating surface. The radiating surface radiates the light beams to the outside when the light beams are introduced to the radiating surface through reflection from the reflecting surfaces and directly through the bottom, so that the light beams are radiated to the outside in a predetermined beam angle.

摘要翻译： 本发明涉及一种LED透镜，其中平面底部具有围绕参考线彼此对称连接并在基准线附近变窄的一对半部。 一对基本上半圆形的反射表面从与参考线的两端连接的底部的两个边缘延伸。 辐射表面与反射表面的底部和半圆形边缘的剩余边缘连接。 反射面反射光束从LED芯片通过底部朝向辐射表面引入。 当光束通过反射表面反射而直接通过底部将光束引入辐射表面时，辐射表面将光束照射到外部，使得光束以预定的光束角度辐射到外部。

公开(公告)号：US20050072353A1

公开(公告)日：2005-04-07

申请号：US10837709

申请日：2004-05-04

申请人： Soo Min Lee ,  Hun Hahm ,  Young Park

发明人： Soo Min Lee ,  Hun Hahm ,  Young Park

IPC分类号： C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/40 ,  H01L21/20 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/40 ,  C30B25/02 ,  C30B25/20 ,  Y10S117/915

摘要： Disclosed herein is a method of manufacturing a gallium nitride-based (AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) single crystal substrate. The method comprises the steps of preparing a ZnO substrate, primarily growing a gallium nitride-based single crystal layer, and secondarily growing an additional gallium nitride-based single crystal layer on the primarily grown gallium nitride-based single crystal layer while removing the ZnO substrate by etching the underside of the ZnO substrate.

摘要翻译： 本文公开了一种制造氮化镓基（Al x In y Ga（1-xy）N）的方法，其中0 <= x <=1,0,0≤y≤1,0<= x + y <= 1）单晶 基质。 该方法包括以下步骤：制备ZnO衬底，主要生长氮化镓基单晶层，然后在主要生长的氮化镓基单晶层上再次生长附加的氮化镓基单晶层，同时去除ZnO衬底 通过蚀刻ZnO衬底的下侧。

公开(公告)号：US20060169999A1

公开(公告)日：2006-08-03

申请号：US11319101

申请日：2005-12-28

申请人： Young Park ,  Seung Lee ,  Hun Hahm ,  Hyung Kim ,  Bum Kim ,  Young Jeong ,  Ho Ahn ,  Jung Park

发明人： Young Park ,  Seung Lee ,  Hun Hahm ,  Hyung Kim ,  Bum Kim ,  Young Jeong ,  Ho Ahn ,  Jung Park

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L33/60 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/00014

摘要： The invention relates to an LED package frame and an LED package incorporating the same. The LED package frame comprises an LED chip; and a heat conductive member made of a lump of high heat conductivity material. The heat conductive member has a receiving part at a lateral portion, and is mounted with the LED chip. A lead is inserted at one end into the receiving part of the heat conductive member, and electrically connected to the LED chip. An electrically insulating layer is placed in tight contact between the lead and the receiving part of the heat conductive member to separate the lead from the receiving part. With the lead inserted into the heat conductive member, it is possible to reduce size while maintaining high heat conductivity and stability. Also, it is possible to provide an LED package frame and a high power LED package by fixing the lead fixed to the heat conductive member without a jig.

摘要翻译： 本发明涉及一种LED封装框架和一个包含该LED封装框架的LED封装件。 LED封装框架包括LED芯片; 以及由高导热性材料块制成的导热构件。 导热构件在侧部具有接收部，并且安装有LED芯片。 引线一端插入导热部件的接收部分，并与LED芯片电连接。 电绝缘层被放置在引导件和导热构件的接收部分之间的紧密接触中以将引线与接收部分分离。 通过将导线插入导热构件，可以在保持高导热性和稳定性的同时减小尺寸。 此外，通过将固定在导热构件上的引线固定而不用夹具，可以提供LED封装框架和大功率LED封装。

公开(公告)号：US20060034082A1

公开(公告)日：2006-02-16

申请号：US10957650

申请日：2004-10-05

申请人： Jung Park ,  Young Park ,  Hun Hahm ,  Young Jeong ,  Hyung Kim

发明人： Jung Park ,  Young Park ,  Hun Hahm ,  Young Jeong ,  Hyung Kim

IPC分类号： F21V13/04

CPC分类号： H01L33/58 ,  G02F1/133603 ,  H01L33/54 ,  Y10S362/80

摘要： The present invention relates to a multi-lens LED. The LED has multiple lenses and an intermediate layer interposed between the multiple lenses in order to radiate light emitted from an LED chip in a desired direction and/or beam angle without using a complicated lens configuration. The first lens is centered behind the LED chip when seen in the propagation direction of light, the second lens has a concave structure and surrounds the first lens, and the intermediate layer is interposed between the first and second lenses, so that light emitted from the LED chip can be radiated in a wide beam angle. When provided in the form of a hemisphere, the multi-lens LED can be attached to a wall or a ceiling in use for interior lighting. On the other hand, when provided in the form of a cylinder, the multi-lens LED of the invention can be applied in arrays to be used as a light source of an LCD backlight apparatus.

摘要翻译： 本发明涉及一种多透镜LED。 LED具有多个透镜和介于多个透镜之间的中间层，以便在不需要复杂透镜配置的情况下以期望的方向和/或光束角辐射从LED芯片发射的光。 当在光的传播方向上观察时，第一透镜位于LED芯片的后面，第二透镜具有凹形结构并且围绕第一透镜，并且中间层插入在第一透镜和第二透镜之间，使得从 LED芯片可以以较宽的光束角度辐射。 当以半球的形式提供时，多透镜LED可以附着在用于室内照明的墙壁或天花板上。 另一方面，当以圆筒形式提供时，本发明的多透镜LED可以应用于阵列以用作LCD背光装置的光源。