公开(公告)号：US06445076B1

公开(公告)日：2002-09-03

申请号：US09700491

申请日：2000-11-16

申请人： Takehiro Shimizu ,  Takafumi Dohdoh ,  Kazumi Tameshige ,  Hidekazu Matsuura ,  Yoshihiro Nomura ,  Kunihiro Tsubosaki ,  Toshihiro Shiotsuki ,  Kazunari Suzuki ,  Tomoko Higashino

发明人： Takehiro Shimizu ,  Takafumi Dohdoh ,  Kazumi Tameshige ,  Hidekazu Matsuura ,  Yoshihiro Nomura ,  Kunihiro Tsubosaki ,  Toshihiro Shiotsuki ,  Kazunari Suzuki ,  Tomoko Higashino

IPC分类号： H01L2348

CPC分类号： C09J179/08 ,  H01L23/4951 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2924/01012 ,  H01L2924/0102 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An insulating adhesive for electronic parts, which is to be used for bonding a semiconductor chip to a lead frame and comprises a resin and a solvent, the resin having (A) a weight average molecular weight (Mw) of 30,000 to 300,000 based on conversion into polystyrene and (B) a ratio of weight average molecular weight (Mw)/number average molecular weight (Mn) of 5 or less, and (C) the insulating adhesive for electronic parts having a viscosity of 5,000 to 100,000 mPa.s at a rotation number of 10 rpm and a viscosity ratio (&eegr;1 rpm/&eegr;10 rpm) of 1.0 to 6.0 as measured at 25° C. with an E-type viscometer.

摘要翻译： 一种用于电子部件的绝缘粘合剂，其用于将半导体芯片接合到引线框架并且包括树脂和溶剂，所述树脂具有（A）基于转化率的30,000至300,000的重均分子量（Mw） （B）重均分子量（Mw）/数均分子量（Mn）的比值为5以下，（C）粘度为5000〜100,000mPa.s的电子部件用绝缘性粘接剂， 旋转数为10rpm，粘度比（eta1rpm / eta10rpm）为1.0〜6.0，用E型粘度计测定。

公开(公告)号：US06916686B2

公开(公告)日：2005-07-12

申请号：US10342238

申请日：2003-01-15

申请人： Takashi Wada ,  Kazunari Suzuki ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki ,  Tomoko Higashino

发明人： Takashi Wada ,  Kazunari Suzuki ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki ,  Tomoko Higashino

IPC分类号： H01L23/29 ,  H01L21/52 ,  H01L23/12 ,  H01L23/31 ,  H01L23/538 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L24/83 ,  H01L23/3128 ,  H01L23/3164 ,  H01L23/5387 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/75 ,  H01L24/97 ,  H01L25/0657 ,  H01L2221/68336 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A contact collect is provided to prevent damage to the top surface of a semiconductor chip at the time of die bonding the semiconductor chip. A protection tape is pasted to the top surface of the semiconductor chip before die bonding of the semiconductor chip is executed by pressing the back surface (underside) of the semiconductor chip sucked and securely held by the contact collect against respective chip-mounting regions of a multi-wiring board. The contact collect is, for example, substantially cylidrical in outside shape, and a bottom part (suction head) thereof is made of soft synthetic rubber, etc. The protection tape pasted to the top surface of the semiconductor chip prevents the top surface of the semiconductor chip from directly contacting with the contact collect even at the time of vacuum suction by pressing the suction head of the contact collect against the top surface of the semiconductor chip.

摘要翻译： 提供接触收集以防止在半导体芯片的芯片接合时损坏半导体芯片的顶表面。 将半导体芯片的裸片接合之前，通过将被触点收集并牢固地保持的半导体芯片的背面（下侧）按压到相应的芯片安装区域，将保护带粘贴到半导体芯片的顶表面 多线路板 接触收集体例如是外形大致圆形，其底部（吸头）由软质合成橡胶等构成。粘贴在半导体芯片的上表面的保护带防止了 即使在真空抽吸时，通过按压接触器的吸头将半导体芯片与接触件直接接触收集，也抵抗半导体芯片的顶表面收集。

公开(公告)号：US06610561B2

公开(公告)日：2003-08-26

申请号：US09849230

申请日：2001-05-07

申请人： Kunihiro Tsubosaki ,  Masachika Masuda ,  Akihiko Iwaya ,  Atsushi Nakamura ,  Chikako Imura ,  Toshihiro Shiotsuki

发明人： Kunihiro Tsubosaki ,  Masachika Masuda ,  Akihiko Iwaya ,  Atsushi Nakamura ,  Chikako Imura ,  Toshihiro Shiotsuki

IPC分类号： H01L2144

CPC分类号： H01L24/06 ,  H01L23/4951 ,  H01L23/49551 ,  H01L23/50 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48599 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/85399 ,  H01L2224/92147 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention provides a thin, inexpensive, high-performance semiconductor device provided with busbar leads, power leads and signal leads. A portion of the power lead connected to the busbar lead is depressed toward a major surface of a semiconductor chip to form depressed portion, and the depressed portion is bonded to the major surface of the semiconductor chip by an adhesive layer. The signal lead and the busbar lead are spaced apart from the major surface of the semiconductor chip.

摘要翻译： 本发明提供一种薄型，廉价的高性能半导体器件，其具有母线引线，电源引线和信号引线。 连接到汇流条引线的电源引线的一部分朝向半导体芯片的主表面压下以形成凹陷部分，并且凹陷部分通过粘合剂层结合到半导体芯片的主表面。 信号引线和母线引线与半导体芯片的主表面间隔开。

公开(公告)号：US6137159A

公开(公告)日：2000-10-24

申请号：US258300

申请日：1999-02-26

申请人： Kunihiro Tsubosaki ,  Masachika Masuda ,  Akihiko Iwaya ,  Atsushi Nakamura ,  Chikako Imura ,  Toshihiro Shiotsuki

发明人： Kunihiro Tsubosaki ,  Masachika Masuda ,  Akihiko Iwaya ,  Atsushi Nakamura ,  Chikako Imura ,  Toshihiro Shiotsuki

IPC分类号： H01L23/495 ,  H01L23/50

CPC分类号： H01L24/06 ,  H01L23/4951 ,  H01L23/49551 ,  H01L23/50 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06136 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/92147 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181

摘要： The present invention provides a thin, inexpensive, high-performance semiconductor device provided with busbar leads, power leads and signal leads. A portion of the power lead connected to the busbar lead is depressed toward a major surface of a semiconductor chip to form a depressed portion, and the depressed portion is bonded to the major surface of the semiconductor chip by an adhesive layer. The signal lead and the busbar lead are spaced apart from the major surface of the semiconductor chip.

摘要翻译： 本发明提供一种薄型，廉价的高性能半导体器件，其具有母线引线，电源引线和信号引线。 连接到汇流条引线的电源引线的一部分朝向半导体芯片的主表面压下以形成凹陷部分，并且凹陷部分通过粘合剂层结合到半导体芯片的主表面。 信号引线和母线引线与半导体芯片的主表面间隔开。

公开(公告)号：US06335227B1

公开(公告)日：2002-01-01

申请号：US09690451

申请日：2000-10-18

申请人： Kunihiro Tsubosaki ,  Masachika Masuda ,  Akihiko Iwaya ,  Atsushi Nakamura ,  Chikako Imura ,  Toshihiro Shiotsuki

发明人： Kunihiro Tsubosaki ,  Masachika Masuda ,  Akihiko Iwaya ,  Atsushi Nakamura ,  Chikako Imura ,  Toshihiro Shiotsuki

IPC分类号： H01L2144

CPC分类号： H01L24/06 ,  H01L23/4951 ,  H01L23/49551 ,  H01L23/50 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06136 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/92147 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399

摘要： A method is provided for forming a thin, inexpensive, high-performance semiconductor device provided with busbar leads, power leads and signal leads. A portion of the power lead connected to the busbar lead is depressed toward a major surface of a semiconductor chip to form a depressed portion, and the depressed portion is bonded to the major surface of the semiconductor chip by an adhesive layer. The signal lead and the busbar lead are spaced apart from the major surface of the semiconductor chip.

摘要翻译： 提供了一种用于形成具有母线，电源引线和信号引线的薄型，便宜的高性能半导体器件的方法。 连接到汇流条引线的电源引线的一部分朝向半导体芯片的主表面压下以形成凹陷部分，并且凹陷部分通过粘合剂层结合到半导体芯片的主表面。 信号引线和母线引线与半导体芯片的主表面间隔开。

公开(公告)号：US20050110127A1

公开(公告)日：2005-05-26

申请号：US10981489

申请日：2004-11-05

申请人： Kouichi Kanemoto ,  Kazunari Suzuki ,  Toshihiro Shiotsuki ,  Hideyuki Suga

发明人： Kouichi Kanemoto ,  Kazunari Suzuki ,  Toshihiro Shiotsuki ,  Hideyuki Suga

IPC分类号： H01L25/18 ,  H01L23/00 ,  H01L23/12 ,  H01L23/495 ,  H01L25/065 ,  H01L25/07 ,  H01L29/423

CPC分类号： H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A thin semiconductor device which assures a high production yield. The semiconductor device includes: first and second semiconductor chips each of which has electrodes over its first surface; first leads electrically connected with the electrodes of the first semiconductor chip through first bonding wires; second leads electrically connected with the electrodes of the second semiconductor chip through second bonding wires; a die pad with first and second surfaces opposite each other where the first semiconductor chip's first surface is bonded to the first surface and the second semiconductor chip's first surface is bonded to the second surface; and a resin sealer which seals the first and second semiconductor chips, inner portions of the first and second leads, the first and second bonding wires, and the die pad. The inner portions of the first and second leads and the die pad lie at the same height level in a thickness direction of the resin sealer.

摘要翻译： 确保高产量的薄半导体器件。 半导体器件包括：第一和第二半导体芯片，每个半导体芯片在其第一表面上具有电极; 第一引线通过第一接合线与第一半导体芯片的电极电连接; 第二引线通过第二接合线与第二半导体芯片的电极电连接; 具有第一和第二表面相对的第一和第二表面的第一和第二表面，其中第一半导体芯片的第一表面接合到第一表面，并且第二半导体芯片的第一表面接合到第二表面; 以及密封第一和第二半导体芯片，第一和第二引线的内部部分，第一和第二接合线以及管芯焊盘的树脂密封件。 第一和第二引线和芯片焊盘的内部在树脂密封件的厚度方向处于相同的高度水平。

公开(公告)号：US07923292B2

公开(公告)日：2011-04-12

申请号：US12846616

申请日：2010-07-29

申请人： Takashi Kikuchi ,  Koichi Kanemoto ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki

发明人： Takashi Kikuchi ,  Koichi Kanemoto ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki

IPC分类号： H01L23/49 ,  H01L21/50

CPC分类号： H01L24/83 ,  H01L23/3128 ,  H01L23/49575 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49174 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85181 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/01028 ,  H01L2224/29099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： In the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via DAF, thickness of DAF of the back surface of the uppermost semiconductor chip with which the control circuit was formed was made thicker than each of DAF of the back surface of the lower layer semiconductor chip with which the memory circuit was formed. Hereby, the defect that the bonding wire which connects the uppermost semiconductor chip and a wiring substrate contacts the main surface corner part of a lower layer semiconductor chip can be reduced.

摘要翻译： 在具有这样的结构的半导体器件中，其结构是在通过DAF积聚的状态下，在相同的密封体中存储有多个平面尺寸不同的半导体芯片的半导体器件，最上半导体芯片的背面的DAF的厚度与 控制电路的形成比形成有存储电路的下层半导体芯片的背面的DAF的厚度大。 因此，可以减少连接最上半导体芯片和布线基板的接合线与下层半导体芯片的主表面角部接触的缺陷。

公开(公告)号：US07795741B2

公开(公告)日：2010-09-14

申请号：US11851982

申请日：2007-09-07

申请人： Takashi Kikuchi ,  Koichi Kanemoto ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki

发明人： Takashi Kikuchi ,  Koichi Kanemoto ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki

IPC分类号： H01L23/49

CPC分类号： H01L24/83 ,  H01L23/3128 ,  H01L23/49575 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49174 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85181 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/01028 ,  H01L2224/29099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A semiconductor device which stores a plurality of semiconductor chips, having planar sizes which differ, in the same sealing body in a state in which they are accumulated via an insulating film which has an adhesive property. In the semiconductor device, the thickness of DAF of the back surface of the uppermost semiconductor chip with which the control circuit is formed is thicker than each of DAF of the back surface of the lower layer semiconductor chip with which the memory circuit is formed.

摘要翻译： 一种半导体器件，其在通过具有粘合性的绝缘膜积聚的状态下，在相同的密封体中存储具有不同的平面尺寸的多个半导体芯片。 在半导体装置中，形成有控制电路的最上半导体芯片的背面的DAF的厚度比形成有存储电路的下层半导体芯片的背面的DAF的厚度大。

公开(公告)号：US20080251897A1

公开(公告)日：2008-10-16

申请号：US11851982

申请日：2007-09-07

申请人： Takashi Kikuchi ,  Koichi Kanemoto ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki

发明人： Takashi Kikuchi ,  Koichi Kanemoto ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki

IPC分类号： H01L23/49

CPC分类号： H01L24/83 ,  H01L23/3128 ,  H01L23/49575 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49174 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85181 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/01028 ,  H01L2224/29099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： The reliability of the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via the insulating film which has adhesive property is improved.In the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via DAF, thickness of DAF of the back surface of the uppermost semiconductor chip with which the control circuit was formed was made thicker than each of DAF of the back surface of the lower layer semiconductor chip with which the memory circuit was formed. Hereby, the defect that the bonding wire which connects the uppermost semiconductor chip and a wiring substrate contacts the main surface corner part of a lower layer semiconductor chip can be reduced.

摘要翻译： 通过经由具有粘合性的绝缘膜积聚的状态，具有存储在同一密封体中平面尺寸不同的多个半导体芯片的结构的半导体器件的可靠性得到改善。 在具有这样的结构的半导体器件中，其结构是在通过DAF积聚的状态下，在相同的密封体中存储有多个平面尺寸不同的半导体芯片的半导体器件，最上半导体芯片的背面的DAF的厚度与 控制电路的形成比形成有存储电路的下层半导体芯片的背面的DAF的厚度大。 因此，可以减少连接最上半导体芯片和布线基板的接合线与下层半导体芯片的主表面角部接触的缺陷。

公开(公告)号：US08518744B2

公开(公告)日：2013-08-27

申请号：US13044525

申请日：2011-03-09

申请人： Takashi Kikuchi ,  Koichi Kanemoto ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki

发明人： Takashi Kikuchi ,  Koichi Kanemoto ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki

IPC分类号： H01L21/60

CPC分类号： H01L24/83 ,  H01L23/3128 ,  H01L23/49575 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49174 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85181 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/01028 ,  H01L2224/29099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： The reliability of the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via the insulating film which has adhesive property is improved.In the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via DAF, thickness of DAF of the back surface of the uppermost semiconductor chip with which the control circuit was formed was made thicker than each of DAF of the back surface of the lower layer semiconductor chip with which the memory circuit was formed. Hereby, the defect that the bonding wire which connects the uppermost semiconductor chip and a wiring substrate contacts the main surface corner part of a lower layer semiconductor chip can be reduced.

摘要翻译： 通过经由具有粘合性的绝缘膜积聚的状态，具有存储在同一密封体中平面尺寸不同的多个半导体芯片的结构的半导体器件的可靠性得到改善。 在具有这样的结构的半导体器件中，其结构是在通过DAF积聚的状态下，在相同的密封体中存储有多个平面尺寸不同的半导体芯片的半导体器件，最上半导体芯片的背面的DAF的厚度与 控制电路的形成比形成有存储电路的下层半导体芯片的背面的DAF的厚度大。 因此，可以减少连接最上半导体芯片和布线基板的接合线与下层半导体芯片的主表面角部接触的缺陷。