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    Extended wavelength strained layer lasers having strain compensated layers
    4.
    发明授权
    Extended wavelength strained layer lasers having strain compensated layers 失效
    具有应变补偿层的扩展波长应变层激光器

    公开(公告)号：US5960018A

    公开(公告)日：1999-09-28

    申请号：US115689

    申请日：1998-07-15

    申请人： Jack L. Jewell ,  Henryk Temkin

    发明人： Jack L. Jewell ,  Henryk Temkin

    IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01L29/06 ,  H01S3/08

    CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01S5/18311 ,  H01S5/2231 ,  H01S5/3235 ,  H01S5/34 ,  H01S5/343 ,  H01L33/105 ,  H01S2302/00 ,  H01S5/0211 ,  H01S5/1221 ,  H01S5/18358 ,  H01S5/2215 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/34306

    摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100.degree. C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    摘要翻译： 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3） 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），（4）采用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其他材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外，讨论了利用上述技术的结构。

    Vertical cavity, surface-emitting laser with expanded cavity
    6.
    发明授权
    Vertical cavity, surface-emitting laser with expanded cavity 失效
    垂直腔，表面发射激光器具有扩展腔

    公开(公告)号：US5295147A

    公开(公告)日：1994-03-15

    申请号：US994976

    申请日：1992-12-22

    申请人： Jack L. Jewell ,  Greg R. Olbright

    发明人： Jack L. Jewell ,  Greg R. Olbright

    IPC分类号： H01S3/00 ,  H01S5/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183 ,  H01S3/19

    CPC分类号： H01S5/18358 ,  H01S2301/166 ,  H01S5/0422 ,  H01S5/1039 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/205 ,  H01S5/2218

    摘要： A vertical-cavity, surface-emitting semiconductor laser having a substrate, an active layer of a semiconductor material which is adapted to generate light on a surface of the substrate, a pair of mirrors at opposite sides of the active layer and means for expanding the diameter of the output beam. Such means include a spacer layer of an optically passive material between the active layer and at least one of the mirrors, and mirror layers of reduced difference in index of refraction, interface layers having intermediate indices of refraction placed between mirror layers, in either case expanding the effective optical cavity length to at least 100 times the thickness of the active material in the active layer. Another means is anti-waveguiding which directly expands the diameter of the beam. The expanded cavity provides an output beam of larger diameter while maintaining stable single mode emission. The spacer layer may be a separate layer or region over the substrate or at least a portion of the substrate.

    摘要翻译： 具有衬底的垂直腔表面发射半导体激光器，适于在衬底的表面上产生光的半导体材料的有源层，在有源层的相对侧上的一对反射镜和用于扩展 输出光束的直径。 这种装置包括在活性层和至少一个反射镜之间的光学无源材料的隔离层，以及折射率差异差的镜面层，具有放置在镜层之间的中间折射率的界面层，在任一情况下扩展 有效光腔长度至少为有源层中活性材料厚度的100倍。 另一种方法是直接扩大梁的直径的抗波导。 扩展腔提供较大直径的输出光束，同时保持稳定的单模发射。 间隔层可以是衬底上的单独的层或区域或衬底的至少一部分。

    Integration of transistors with vertical cavity surface emitting lasers
    7.
    发明授权
    Integration of transistors with vertical cavity surface emitting lasers 失效
    晶体管与垂直腔表面发射激光器的集成

    公开(公告)号：US5283447A

    公开(公告)日：1994-02-01

    申请号：US823496

    申请日：1992-01-21

    申请人： Gregory R. Olbright ,  Jack L. Jewell

    发明人： Gregory R. Olbright ,  Jack L. Jewell

    IPC分类号： H01S5/00 ,  H01L27/15 ,  H01L31/153 ,  H01S5/026 ,  H01S5/042 ,  H01S5/183 ,  H01S5/34 ,  H01L33/00

    CPC分类号： H01S5/18341 ,  H01L27/15 ,  H01L31/153 ,  H01S5/0261 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/3428 ,  H01S5/423

    摘要： Optoelectronic integrated circuits are disclosed comprising a vertical-cavity surface emitting laser (VCSEL) and a transistor. The VCSEL comprises a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible range which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping the regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Embodiments are disclosed which integrate the VCSEL with bipolar and FET transistors as well as phototransistors.

    摘要翻译： 公开了包括垂直腔表面发射激光器（VCSEL）和晶体管的光电集成电路。 VCSEL包括夹在两个分布式布拉格反射器之间的激光腔。 激光腔包括一对围绕一个或多个活性的光学发光量子阱层的间隔层，所述有源光发射量子阱层在可见光范围内具有用作器件的有源发光材料的带隙。 激光腔的厚度是m（λ）/ 2neff，其中m是整数，（λ）是激光辐射的自由空间波长，neff是空腔的有效折射率。 通过将底部反射镜和衬底重掺杂到一种导电类型并以相反的导电类型重掺杂上反射镜的区域来实现激光的电泵浦，以形成二极管结构并向二极管结构施加合适的电压。 公开了将VCSEL与双极和FET晶体管以及光电晶体管集成的实施例。

    Vertical-cavity surface-emitting lasers with intra-cavity structures
    9.
    发明授权
    Vertical-cavity surface-emitting lasers with intra-cavity structures 失效
    具有腔内结构的垂直腔表面发射激光器

    公开(公告)号：US5245622A

    公开(公告)日：1993-09-14

    申请号：US879471

    申请日：1992-05-07

    申请人： Jack L. Jewell ,  Gregory Olbright

    发明人： Jack L. Jewell ,  Gregory Olbright

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/20 ,  H01S5/22

    CPC分类号： H01S5/18308 ,  H01S2301/166 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2224

    摘要： Vertical-cavity surface-emitting lasers (VCSELs) are disclosed having various intra-cavity structures to achieve low series resistance, high power efficiencies, and TEM.sub.00 mode radiation. In one embodiment of the invention, a VCSEL comprises a laser cavity disposed between an upper and a lower mirror. The laser cavity comprises upper and lower spacer layers sandwiching an active region. A stratified electrode for conducting electrical current to the active region is disposed between the upper mirror and the upper spacer. The stratified electrode comprises a plurality of alternating high and low doped layers for achieving low series resistance without increasing the optical absorption. The VCSEL further comprises a current aperture as a disk shaped region formed in the stratified electrode for suppressing higher mode radiation. The current aperture is formed by reducing or eliminating the conductivity of the annular surrounding regions. In another embodiment, a metal contact layer having an optical aperture is formed within the upper mirror of the VCSEL. The optical aperture blocks the optical field in such a manner that it eliminates higher transverse mode lasing.

    摘要翻译： 公开了具有各种腔内结构以实现低串联电阻，高功率效率和TEM00模式辐射的垂直腔表面发射激光器（VCSEL）。 在本发明的一个实施例中，VCSEL包括设置在上反射镜和下反射镜之间的激光腔。 激光腔包括夹持有源区的上隔离层和下间隔层。 用于将电流传导到有源区的分层电极设置在上反射镜和上间隔件之间。 分层电极包括多个交替的高和低掺杂层，用于实现低串联电阻而不增加光吸收。 VCSEL还包括作为形成在分层电极中的用于抑制更高模式辐射的盘形区域的电流孔径。 通过减小或消除环形周围区域的导电性来形成电流孔径。 在另一个实施例中，在VCSEL的上反射镜内形成具有光学孔的金属接触层。 光学孔径以这样的方式阻挡光场，从而消除了较高的横向模式激光。

    Surface emitting semiconductor laser
    10.
    发明授权
    Surface emitting semiconductor laser 失效
    表面发射半导体激光器

    公开(公告)号：US4949350A

    公开(公告)日：1990-08-14

    申请号：US380996

    申请日：1989-07-17

    申请人： Jack L. Jewell ,  Axel Scherer

    发明人： Jack L. Jewell ,  Axel Scherer

    IPC分类号： H01S5/183 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01S5/18305 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3432

    摘要： A vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A small pillar of this heterostructure is etched by chemically assisted xenon ion beam itching. Prior to etching, a top metal contact is deposited on the epitaxial semiconductor. Light is emitted through the substrate having a bandgap larger than that of the quantum well region.

    摘要翻译： 垂直腔表面发射激光器及其制造方法，其中III-V异质结构外延生长以包括由量子阱区域的发射波长分隔的两个干涉镜之间的量子阱有源区。 通过化学辅助的氙离子束瘙痒蚀刻该异质结构的小柱。 在蚀刻之前，在外延半导体上沉积顶部金属接触。 光通过具有大于量子阱区的带隙的衬底发射。