公开(公告)号：US20110272817A1

公开(公告)日：2011-11-10

申请号：US13188124

申请日：2011-07-21

申请人： Akira TOJO ,  Tomoyuki KITANI ,  Kazuhito HIGUCHI ,  Masako FUKUMITSU ,  Tomohiro IGUCHI ,  Hideo NISHIUCHI ,  Kyoko KATO

发明人： Akira TOJO ,  Tomoyuki KITANI ,  Kazuhito HIGUCHI ,  Masako FUKUMITSU ,  Tomohiro IGUCHI ,  Hideo NISHIUCHI ,  Kyoko KATO

IPC分类号： H01L23/48

CPC分类号： H01L24/97 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/544 ,  H01L24/03 ,  H01L24/48 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/274 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating materials, each of the outer plating materials covering five surfaces of the outer electrode other than one surface of the outer electrode being connected with the inner electrode.

摘要翻译： 根据本发明的一个方面，提供一种半导体器件，包括半导体芯片，该半导体芯片包括第一电极和半导体元件的第二电极，第一电极和第二电极被配置在第一表面和第二表面上 半导体芯片的封装材料，封装半导体芯片的封装材料，表面部分不同于区域，每个区域与第一第二电极连接，每个内部电极与第一或第二电极连接，厚度为 来自第一表面或第二表面的内部电极分别与来自第一表面或第二表面的密封材料的厚度相同，外部电极，每个外部电极形成在封装材料上并与内部电极连接， 外部电极的宽度至少比半导体ch的宽度宽 ip和外部电镀材料，覆盖外部电极的除了外部电极的一个表面之外的五个表面的每个外部电镀材料与内部电极连接。

公开(公告)号：US20090072395A1

公开(公告)日：2009-03-19

申请号：US12208718

申请日：2008-09-11

申请人： Tomohiro IGUCHI ,  Hideo NISHIUCHI ,  Kazuhito HIGUCHI ,  Tomoyuki KITANI

发明人： Tomohiro IGUCHI ,  Hideo NISHIUCHI ,  Kazuhito HIGUCHI ,  Tomoyuki KITANI

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L24/85 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4554 ,  H01L2224/456 ,  H01L2224/45647 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/73265 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85909 ,  H01L2224/8592 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2224/85 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a semiconductor element, a lead, and a gold wire electrically connecting an electrode of the semiconductor element and the lead. In the semiconductor device, the gold wire is covered with a metal and is a continuous film formed by plating.

摘要翻译： 半导体器件包括半导体元件，引线和电连接半导体元件的电极和引线的金线。 在半导体器件中，金线被金属覆盖，并且是通过电镀形成的连续膜。

公开(公告)号：US20110186982A1

公开(公告)日：2011-08-04

申请号：US13016239

申请日：2011-01-28

申请人： Tomoyuki KITANI ,  Akira TOJO ,  Takao NOGI ,  Kazuhito HIGUCHI ,  Tomohiro IGUCHI ,  Masako FUKUMITSU ,  Susumu OBATA ,  Yusaku ASANO

发明人： Tomoyuki KITANI ,  Akira TOJO ,  Takao NOGI ,  Kazuhito HIGUCHI ,  Tomohiro IGUCHI ,  Masako FUKUMITSU ,  Susumu OBATA ,  Yusaku ASANO

IPC分类号： H01L23/48 ,  H01L21/782

CPC分类号： H01L21/782 ,  H01L23/48 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a surface mount diode including a diode chip including a first main surface and a second main surface, a cathode electrode including a first internal electrode portion on the first main surface and a first external electrode portion on the first internal electrode portion, an anode electrode including a second internal electrode portion on the second main surface and a second external electrode portion on the second internal electrode portion, a thickness of the second external electrode portion being the same as a thickness of the first external electrode portion, a first covering member covering a periphery surface of one of the internal electrode portions and a periphery surface of the diode chip, and a second covering member covering a periphery surface of the other of the internal electrode portions, the second covering member being different in color from the first covering member.

摘要翻译： 根据一个实施例，一种表面贴装二极管，其包括具有第一主表面和第二主表面的二极管芯片，在第一主表面上包括第一内部电极部分的第一内部电极部分和第一内部电极部分上的第一外部电极部分 包括第二主表面上的第二内部电极部分和第二内部电极部分上的第二外部电极部分的阳极电极，第二外部电极部分的厚度与第一外部电极部分的厚度相同， 覆盖所述内部电极部分中的一个的周边表面和所述二极管芯片的外围表面的第一覆盖部件和覆盖所述另一个所述内部电极部分的周边表面的第二覆盖部件，所述第二覆盖部件的颜色不同于 第一个覆盖成员。

公开(公告)号：US20100140640A1

公开(公告)日：2010-06-10

申请号：US12556134

申请日：2009-09-09

申请人： Kazuo SHIMOKAWA ,  Takashi KOYANAGAWA ,  Takeshi MIYAGI ,  Akihiko HAPPOYA ,  Kazuhito HIGUCHI ,  Tomoyuki KITANI

发明人： Kazuo SHIMOKAWA ,  Takashi KOYANAGAWA ,  Takeshi MIYAGI ,  Akihiko HAPPOYA ,  Kazuhito HIGUCHI ,  Tomoyuki KITANI

IPC分类号： H01L33/00

CPC分类号： H01L33/507 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/44 ,  H01L33/505 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.

摘要翻译： 本发明提供一种光半导体装置，具备：具有第一主面，与第一主面相对的第二主面的发光层，形成在第二主面上的第一电极和第二电极; 设置在所述第一主表面上的荧光层; 设置在荧光层上并由透光性无机材料制成的透光层; 设置在所述第一电极上的第一金属柱; 设置在所述第二电极上的第二金属柱; 密封层，设置在所述第二主表面上，以便密封在所述第一和第二金属柱中，所述第一和第二金属柱的一端暴露; 设置在第一金属柱的暴露端上的第一金属层; 以及设置在第二金属柱的暴露端上的第二金属层。

公开(公告)号：US20130078766A1

公开(公告)日：2013-03-28

申请号：US13676696

申请日：2012-11-14

申请人： Takao NOGI ,  Tomoyuki KITANI ,  Akira TOJO ,  Kentaro SUGA

发明人： Takao NOGI ,  Tomoyuki KITANI ,  Akira TOJO ,  Kentaro SUGA

IPC分类号： H01L21/78

CPC分类号： H01L23/051 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor apparatus includes: forming a protrusion made of a conductor on each of the electrodes provided on a semiconductor wafer top face side of a plurality of semiconductor devices formed in a semiconductor wafer; making a trench in the top face between the plurality of semiconductor devices; filling an insulator into a gap between the protrusions and into the trench to form a sealing member; grinding a bottom face of the semiconductor wafer opposing the top face until the sealing member being exposed to divide the semiconductor wafer into each of the semiconductor devices; forming a first lead made of a conductor on each of the protrusions, the first lead forming a portion of a first external electrode; and forming a conductive material layer directly to form a second lead on the bottom face of the plurality of semiconductor devices.

摘要翻译： 一种半导体装置的制造方法，其特征在于，在形成于半导体晶片的多个半导体装置的半导体晶片顶面侧的各电极上形成由导体构成的突起， 在所述多个半导体器件之间的顶面中形成沟槽; 将绝缘体填充到突起之间的间隙中并进入沟槽中以形成密封构件; 研磨与顶面相对的半导体晶片的底面，直到暴露出密封构件，以将半导体晶片分成每个半导体器件; 在每个突起上形成由导体制成的第一引线，所述第一引线形成第一外部电极的一部分; 以及直接形成导电材料层以在所述多个半导体器件的底面上形成第二引线。

公开(公告)号：US20080250847A1

公开(公告)日：2008-10-16

申请号：US12061966

申请日：2008-04-03

申请人： Tomoyuki KITANI ,  Miyuki Takenaka ,  Mitsuhiro Oki ,  Masami Okamura

发明人： Tomoyuki KITANI ,  Miyuki Takenaka ,  Mitsuhiro Oki ,  Masami Okamura

IPC分类号： G01N7/00 ,  G01R31/28

CPC分类号： G01N33/0009 ,  Y10T29/49004

摘要： A detector for detecting a gaseous component in a gas is comprised of a sensor having a gas detecting region configured to output an electric signal in response to detection of the gaseous component and a contact portion configured to conduct the electric signal; an enclosure housing the sensor and having a through hole configured to introduce the gas to the gas detecting region; a wiring partly facing to the contact portion and being led out of the enclosure; an electric conductor interposed between the contact portion and the wiring; a packing member surrounding the through hole and so as to make a gap between the sensor and the enclosure impervious to the gas.

摘要翻译： 用于检测气体中的气体成分的检测器包括具有气体检测区域的传感器，该气体检测区域被配置为响应气体成分的检测而输出电信号，以及接触部分，被配置为传导电信号; 壳体，其容纳所述传感器并且具有通孔，所述通孔被配置为将气体引入所述气体检测区域; 部分地面向接触部分并被引出外壳的布线; 介于所述接触部分和所述布线之间的电导体; 围绕通孔的填充构件，并且在传感器和不透气体的外壳之间形成间隙。