公开(公告)号：US20120202340A1

公开(公告)日：2012-08-09

申请号：US13021064

申请日：2011-02-04

申请人： Xianfeng LU ,  Ludovic GODET ,  Anthony RENAU

发明人： Xianfeng LU ,  Ludovic GODET ,  Anthony RENAU

IPC分类号： H01L21/425

CPC分类号： H01L21/425 ,  H01L29/22 ,  H01L29/227 ,  H01L31/02963

摘要： ZnTe is implanted with a first species selected from Group III and a second species selected from Group VII. This may be performed using sequential implants, implants of the first species and second species that are at least partially simultaneous, or a molecular species comprising an atom selected from Group III and an atom selected from Group VII. The implants may be performed at an elevated temperature in one instance between 70° C. and 800° C.

摘要翻译： ZnTe植入选自III族的第一种和选自第VII组的第二种。 这可以使用顺序植入物，第一物种的植入物和至少部分同时的第二物质或包含选自III族的原子和选自VII族的原子的分子物质进行。 植入物可以在70℃和800℃之间的一个高温下进行。

公开(公告)号：US20130052810A1

公开(公告)日：2013-02-28

申请号：US13597146

申请日：2012-08-28

申请人： Blake Darby ,  Ludovic GODET ,  Xianfeng LU

发明人： Blake Darby ,  Ludovic GODET ,  Xianfeng LU

IPC分类号： H01L21/20 ,  H01M10/04

CPC分类号： C23C16/24 ,  C23C16/28 ,  C23C16/452 ,  H01M4/0421 ,  H01M4/1395 ,  Y02E60/122

摘要： In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that comprise one or more of: germanium precursor ions and silicon precursor ions in a plasma of a plasma chamber, in which the semiconductor precursor ions are operative to form a porous film on the workpiece. The method further includes directing the semiconductor precursor ions to the workpiece over a range of angles.

摘要翻译： 在一个实施例中，在工件上制造多孔半导体膜的方法包括在等离子体室的等离子体中产生包括锗前驱体离子和硅前体离子中的一种或多种的半导体前体离子，其中半导体前体离子可操作 以在工件上形成多孔膜。 该方法还包括在半角度范围内将半导体前体离子引导到工件。

公开(公告)号：US20120202341A1

公开(公告)日：2012-08-09

申请号：US13364415

申请日：2012-02-02

申请人： Xiangfeng LU ,  Ludovic GODET ,  Anthony RENAU

发明人： Xiangfeng LU ,  Ludovic GODET ,  Anthony RENAU

IPC分类号： H01L21/425

CPC分类号： H01L21/425 ,  H01L29/22 ,  H01L29/227 ,  H01L31/02963

摘要： ZnTe is implanted with a first species selected from Group III and a second species selected from Group VII. This may be preformed using sequential implants, implants of the first species and second species that are at least partially simultaneous, or a molecular species comprising an atom selected from Group III and an atom selected from Group VII. The implants may be performed at an elevated temperature in one instance between 70° C. and 800° C.

摘要翻译： ZnTe植入选自III族的第一种和选自第VII组的第二种。 这可以使用顺序植入物，第一物质的植入物和至少部分同时的第二物质，或包含选自III族的原子和选自VII族的原子的分子物质来进行。 植入物可以在70℃和800℃之间的一个高温下进行。

公开(公告)号：US20160093409A1

公开(公告)日：2016-03-31

申请号：US14502794

申请日：2014-09-30

申请人： Sang Ki NAM ,  Ludovic GODET

发明人： Sang Ki NAM ,  Ludovic GODET

IPC分类号： G21F1/02 ,  H01J37/32 ,  C23C16/50

CPC分类号： H01J37/3244 ,  C23C16/042 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32706

摘要： A guard aperture is described to control the ion angular distribution in plasma processing in one example a workpiece processing system has a plasma chamber, a plasma source to generate a plasma containing gas ions in the plasma chamber, the plasma forming a sheath above the workpiece, the sheath having an electric field, a workpiece holder in the chamber to apply a bias voltage to the workpiece to attract ions across the plasma sheath to be incident on the workpiece, a control aperture between the sheath and the workpiece, the aperture being positioned to modify an angular distribution of the ions that are incident on the workpiece, and a guard aperture between the sheath and the control aperture to isolate an electrical field of the control aperture from the plasma sheath.

摘要翻译： 在一个示例中描述了保护孔以控制等离子体处理中的离子角分布，工件处理系统具有等离子体室，等离子体源，以产生在等离子体室中包含气体离子的等离子体，等离子体在工件上形成鞘， 所述护套具有电场，所述腔室中的工件保持器用于向所述工件施加偏置电压以将离子穿过所述等离子体护套以入射到所述工件上，所述护套和所述工件之间的控制孔，所述孔定位成 修改入射在工件上的离子的角度分布，以及护套和控制孔之间的保护孔，以将控制孔的电场与等离子体鞘隔开。

公开(公告)号：US20120145918A1

公开(公告)日：2012-06-14

申请号：US12965419

申请日：2010-12-10

申请人： Svetlana RADOVANOV ,  Ludovic GODET ,  Christopher R. HATEM

发明人： Svetlana RADOVANOV ,  Ludovic GODET ,  Christopher R. HATEM

IPC分类号： H01J27/00 ,  H01J37/08

CPC分类号： H01J37/32412 ,  C23C14/06 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/48 ,  C23C14/54 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32623 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/31701

摘要： A plasma is formed from one or more gases in a plasma chamber using at least a first power and a second power. A first ion species is generated at said first power and a second ion species is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece at two different energies using at least a first bias voltage and a second bias voltage. This may enable implantation to two different depths. These on species may be atomic ions or molecular ions. The molecular ions may be larger than the gases used to form the plasma.

摘要翻译： 使用至少第一功率和第二功率在等离子体室中的一种或多种气体形成等离子体。 在所述第一功率下产生第一离子种类，并且在所述第二功率下产生第二离子种类。 在一个实施例中，使用至少第一偏置电压和第二偏置电压将第一离子种类和第二离子种类以两种不同的能量注入到工件中。 这可以使植入到两个不同的深度。 这些物种可能是原子离子或分子离子。 分子离子可能大于用于形成等离子体的气体。

公开(公告)号：US20110309049A1

公开(公告)日：2011-12-22

申请号：US13157005

申请日：2011-06-09

申请人： George D. PAPASOULIOTIS ,  Kamal HADIDI ,  Helen L. MAYNARD ,  Ludovic GODET ,  Vikram SINGH ,  Timothy J. MILLER ,  Bernard LINDSAY

发明人： George D. PAPASOULIOTIS ,  Kamal HADIDI ,  Helen L. MAYNARD ,  Ludovic GODET ,  Vikram SINGH ,  Timothy J. MILLER ,  Bernard LINDSAY

IPC分类号： C23F1/00 ,  C23C14/06 ,  C23C14/48 ,  H05H1/46 ,  C23C16/505

CPC分类号： H01J37/32146 ,  H01J37/32412 ,  H01J37/3244

摘要： Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.

摘要翻译： 公开了用于等离子体处理衬底的技术。 在一个特定的示例性实施例中，可以通过包括将进料气体接近等离子体源的方法来实现，其中进料气体可以包括第一和第二物质，其中第一和第二物质具有不同的电离能; 向所述等离子体源提供多级RF功率波形，其中所述多级RF功率波形在第一脉冲持续时间期间具有至少第一功率电平以及在第二脉冲持续时间期间具有第二功率电平，其中所述第二功率电平可以 与第一功率水平不同; 在第一脉冲持续期间电离原料气体的第一种; 在第二脉冲期间电离第二物种; 以及在所述第一脉冲持续时间期间向所述衬底提供偏置。

公开(公告)号：US20090061605A1

公开(公告)日：2009-03-05

申请号：US12267193

申请日：2008-11-07

申请人： Ludovic GODET ,  George D. Papasouliotis ,  Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold M. Persing

发明人： Ludovic GODET ,  George D. Papasouliotis ,  Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold M. Persing

IPC分类号： H01L21/265

CPC分类号： H01J37/3171 ,  H01J37/32412 ,  H01J37/32935 ,  H01J2237/31705 ,  H01L21/2236

摘要： A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.

摘要翻译： 在等离子体掺杂系统中提供掺杂剂分布调整溶液以满足浓度和结深度要求的方法。 可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，从而实现表面峰值掺杂剂分布和逆向掺杂剂分布。 该方法可以包括在一个实施方案中的非晶化步骤。

公开(公告)号：US20220316044A1

公开(公告)日：2022-10-06

申请号：US17698566

申请日：2022-03-18

申请人： Kenichi OHNO ,  Takashi KURATOMI ,  Fariah HAYEE ,  Andrew CEBALLOS ,  Rami HOURANI ,  Ludovic GODET

发明人： Kenichi OHNO ,  Takashi KURATOMI ,  Fariah HAYEE ,  Andrew CEBALLOS ,  Rami HOURANI ,  Ludovic GODET

IPC分类号： C23C14/08 ,  C23C14/34 ,  C23C14/35

摘要： A method of forming an optical device is provided. The method includes disposing an optical device substrate on a substrate support in a process volume of a process chamber, the optical device substrate having a first surface; and forming a first optical layer on the first surface of the optical device substrate during a first time period when the optical device substrate is on the substrate support, wherein the first optical layer comprises one or more metals in a metal-containing oxide, a metal-containing nitride, or a metal-containing oxynitride, and the first optical layer is formed without an RF-generated plasma over the optical device substrate; and forming a second optical layer with an RF-generated plasma over the first optical layer during a second time period when the optical device substrate is on the substrate support.

公开(公告)号：US20110300696A1

公开(公告)日：2011-12-08

申请号：US12792190

申请日：2010-06-02

申请人： Christopher R. HATEM ,  Ludovic GODET

发明人： Christopher R. HATEM ,  Ludovic GODET

IPC分类号： H01L21/26

CPC分类号： H01L21/2236 ,  H01L21/2254 ,  H01L21/26506 ,  H01L21/2658 ,  H01L29/66803

摘要： Embodiments of this doping method may be used to improve junction formation. An implant species, such as helium or another noble gas, is implanted into a workpiece to a first depth. A dopant is deposited on a surface of the workpiece. During an anneal, the dopant diffuses to the first depth. The noble gas ions may at least partially amorphize the workpiece during the implant. The workpiece may be planar or non-planar. The implant and deposition may occur in a system without breaking vacuum.

摘要翻译： 该掺杂方法的实施例可用于改善结形成。 诸如氦或另一惰性气体的植入物种植入工件到第一深度。 掺杂剂沉积在工件的表面上。 在退火期间，掺杂剂扩散到第一深度。 惰性气体离子可能在植入期间至少部分地使工件非晶化。 工件可以是平面的或非平面的。 植入物和沉积可能发生在不破坏真空的系统中。

公开(公告)号：US20100255683A1

公开(公告)日：2010-10-07

申请号：US12418120

申请日：2009-04-03

申请人： Ludovic GODET ,  Timothy J. Miller ,  Christopher J. Leavitt ,  Bernard G. Lindsay

发明人： Ludovic GODET ,  Timothy J. Miller ,  Christopher J. Leavitt ,  Bernard G. Lindsay

IPC分类号： H01L21/3065 ,  C23C16/513 ,  H01L21/306 ,  H01L21/302

CPC分类号： H01J37/32623

摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.

摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂被配置为控制等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。 通过控制等离子体和等离子体护套之间的边界的形状，能够实现粒子撞击工件的大范围入射角。