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1.
公开(公告)号:US07382017B2
公开(公告)日:2008-06-03
申请号:US11695728
申请日:2007-04-03
申请人: Xiangfeng Duan , Calvin Y. H. Cho , David L. Heald , Chunming Niu , J. Wallace Parce , David P. Stumbo
发明人: Xiangfeng Duan , Calvin Y. H. Cho , David L. Heald , Chunming Niu , J. Wallace Parce , David P. Stumbo
IPC分类号: H01L29/788
CPC分类号: H01L21/28273 , B82Y10/00 , G03G5/00 , G03G5/02 , G03G5/04 , G03G5/043 , G03G5/08 , G03G5/082 , G03G5/08214 , G11C11/56 , G11C13/02 , G11C13/025 , G11C2213/17 , G11C2213/18 , G11C2216/08 , H01L29/42332 , H01L29/7881 , H01L29/7887 , Y10S977/774 , Y10S977/785 , Y10S977/936
摘要: Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.
摘要翻译: 描述了用于纳米存储器件和各向异性带电载体阵列的方法和装置。 在一方面,存储器件包括衬底,衬底的源极区域和衬底的漏极区域。 纳米元素的群体沉积在通道区域上方的衬底上,在一个实施方案中纳米的群体包括金属量子点。 隧道介电层形成在覆盖沟道区的衬底上,金属迁移势垒层沉积在电介质层上。 在纳米元件的薄膜上形成栅极接触。 纳米元件允许减少横向电荷转移。 存储器件可以是单个或多个存储器件。 在包括具有多个离散能级的一个或多个量子点或分子的多状态存储器件中,公开了一种用于对该器件进行充电和/或放电的方法,该方法包括填充每个点或分子的多个离散能级中的每一个 与一个或多个电子,并随后从一个或多个点或分子的每个离散能级一次去除单个电子。
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2.
公开(公告)号:US07595528B2
公开(公告)日:2009-09-29
申请号:US11018572
申请日:2004-12-21
申请人: Xiangfeng Duan , Calvin Y. H. Chow , David L. Heald , Chunming Niu , J. Wallace Parce , David P. Stumbo
发明人: Xiangfeng Duan , Calvin Y. H. Chow , David L. Heald , Chunming Niu , J. Wallace Parce , David P. Stumbo
IPC分类号: H01L29/788
CPC分类号: G11C11/56 , B82Y10/00 , G03G5/00 , G03G5/02 , G03G5/04 , G03G5/043 , G03G5/08 , G03G5/082 , G03G5/08214 , G11C13/02 , G11C13/025 , G11C2213/17 , G11C2213/18 , G11C2216/08 , H01L21/28273 , H01L21/28282 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/42332 , H01L29/7881 , H01L29/7887 , Y10S977/936 , Y10S977/943
摘要: Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.
摘要翻译: 描述了用于纳米存储器件和各向异性带电载体阵列的方法和装置。 在一方面,存储器件包括衬底,衬底的源极区域和衬底的漏极区域。 纳米元素的群体沉积在通道区域上方的衬底上,在一个实施方案中纳米的群体包括金属量子点。 隧道介电层形成在覆盖沟道区的衬底上,金属迁移势垒层沉积在电介质层上。 在纳米元件的薄膜上形成栅极接触。 纳米元件允许减少横向电荷转移。 存储器件可以是单个或多个存储器件。 在包括具有多个离散能级的一个或多个量子点或分子的多状态存储器件中,公开了一种用于对该器件进行充电和/或放电的方法,该方法包括填充每个点或分子的多个离散能级中的每一个 与一个或多个电子,并随后从一个或多个点或分子的每个离散能级一次去除单个电子。
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公开(公告)号:US07851841B2
公开(公告)日:2010-12-14
申请号:US11760382
申请日:2007-06-08
申请人: Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号: H01L27/108 , H01L29/94
CPC分类号: H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译: 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点,从而提供与多个半导体器件的电连接。 此外,用于制造纳米线的各种材料,包括p掺杂纳米线和n掺杂纳米线的薄膜,纳米线异质结构,发光纳米线异质结构,用于在衬底上定位纳米线的流动掩模,用于沉积纳米线的纳米线喷涂技术,用于减少或消除声子的技术 描述了纳米线中的电子散射,以及用于降低纳米线中的表面状态的技术。
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公开(公告)号:US07064372B2
公开(公告)日:2006-06-20
申请号:US11004380
申请日:2004-12-03
申请人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号: H01L27/108 , H01L29/94 , H01L29/76
CPC分类号: H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
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公开(公告)号:US07427328B2
公开(公告)日:2008-09-23
申请号:US11602783
申请日:2006-11-21
申请人: Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
CPC分类号: H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译: 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点,从而提供与多个半导体器件的电连接。 此外,用于制造纳米线的各种材料,包括p掺杂纳米线和n掺杂纳米线的薄膜,纳米线异质结构,发光纳米线异质结构,用于在衬底上定位纳米线的流动掩模,用于沉积纳米线的纳米线喷涂技术,用于减少或消除声子的技术 描述了纳米线中的电子散射,以及用于降低纳米线中的表面状态的技术。
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公开(公告)号:US20100155696A1
公开(公告)日:2010-06-24
申请号:US11681058
申请日:2007-03-01
申请人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
CPC分类号: H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译: 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点,从而提供与多个半导体器件的电连接。 此外,用于制造纳米线的各种材料,包括p掺杂纳米线和n掺杂纳米线的薄膜,纳米线异质结构,发光纳米线异质结构,用于在衬底上定位纳米线的流动掩模,用于沉积纳米线的纳米线喷涂技术,用于减少或消除声子的技术 描述了纳米线中的电子散射,以及用于降低纳米线中的表面状态的技术。
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7.
公开(公告)号:US07067867B2
公开(公告)日:2006-06-27
申请号:US10674060
申请日:2003-09-30
申请人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号: H01L27/108 , H01L29/94 , H01L29/76 , H01L21/336 , H01L21/8234
CPC分类号: H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译: 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点,从而提供与多个半导体器件的电连接。 此外,用于制造纳米线的各种材料,包括p掺杂纳米线和n掺杂纳米线的薄膜,纳米线异质结构,发光纳米线异质结构,用于在衬底上定位纳米线的流动掩模,用于沉积纳米线的纳米线喷涂技术,用于减少或消除声子的技术 描述了纳米线中的电子散射,以及用于降低纳米线中的表面状态的技术。
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公开(公告)号:US08252164B2
公开(公告)日:2012-08-28
申请号:US13113680
申请日:2011-05-23
申请人: Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X. Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
发明人: Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X. Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
IPC分类号: C25D13/02
CPC分类号: H01L29/0665 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0673 , Y10S977/883
摘要: The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
摘要翻译: 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电(例如,交流电场)来使纳米线与电极对准和关联。 通过调节激励,纳米线耦合到电极,使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法,以及用于操纵溶液中的纳米线的方法。
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公开(公告)号:US07968474B2
公开(公告)日:2011-06-28
申请号:US11979949
申请日:2007-11-09
申请人: Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X. Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
发明人: Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X. Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
IPC分类号: H01L21/71
CPC分类号: H01L29/0665 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0673 , Y10S977/883
摘要: The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
摘要翻译: 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电(例如,交流电场)来使纳米线与电极对准和关联。 通过调节激励,纳米线耦合到电极,使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法,以及用于操纵溶液中的纳米线的方法。
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公开(公告)号:US20080224123A1
公开(公告)日:2008-09-18
申请号:US11979949
申请日:2007-11-09
申请人: Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X.Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
发明人: Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X.Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
IPC分类号: H01L31/00 , H01L21/326
CPC分类号: H01L29/0665 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0673 , Y10S977/883
摘要: The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
摘要翻译: 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电(例如,交流电场)来使纳米线与电极对准和关联。 通过调节激励,纳米线耦合到电极,使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法,以及用于操纵溶液中的纳米线的方法。
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