摘要:
An embodiment of a semiconductor device package includes: (1) an interconnection unit including a patterned conductive layer; (2) an electrical interconnect extending substantially vertically from the conductive layer; (3) a semiconductor device adjacent to the interconnection unit and electrically connected to the conductive layer; (4) a package body: (a) substantially covering an upper surface of the interconnection unit and the device; and (b) defining an opening adjacent to an upper surface of the package body and exposing an upper surface of the interconnect; and (5) a connecting element electrically connected to the device, substantially filling the opening, and being exposed at an external periphery of the device package. The upper surface of the interconnect defines a first plane above a second plane defined by at least a portion of the upper surface of the interconnection unit, and below a third plane defined by the upper surface of the package body.
摘要:
A semiconductor package includes a set of stud bumps, which can be formed by wire bonding technology and can be bonded or joined to a semiconductor element to form a stacked package assembly. Since the process of bonding the semiconductor element to the stud bumps can be carried out without reflow, an undesirable deformation resulting from high temperatures can be controlled or reduced.
摘要:
A semiconductor package includes a set of stud bumps, which can be formed by wire bonding technology and can be bonded or joined to a semiconductor element to form a stacked package assembly. Since the process of bonding the semiconductor element to the stud bumps can be carried out without reflow, an undesirable deformation resulting from high temperatures can be controlled or reduced.
摘要:
Described herein are wafer-level semiconductor device packages with stacking functionality and related stacked package assemblies and methods. In one embodiment, a semiconductor device package includes a set of connecting elements disposed adjacent to a periphery of a set of stacked semiconductor devices. At least one of the connecting elements is wire-bonded to an active surface of an upper one of the stacked semiconductor devices.
摘要:
A semiconductor package includes a set of stud bumps, which can be formed by wire bonding technology and can be bonded or joined to a semiconductor element to form a stacked package assembly. Since the process of bonding the semiconductor element to the stud bumps can be carried out without reflow, an undesirable deformation resulting from high temperatures can be controlled or reduced.
摘要:
Described herein are wafer-level semiconductor device packages with stacking functionality and related stacked package assemblies and methods. In one embodiment, a semiconductor device package includes a set of connecting elements disposed adjacent to a periphery of a set of stacked semiconductor devices. At least one of the connecting elements is wire-bonded to an active surface of an upper one of the stacked semiconductor devices.
摘要:
An embodiment of a semiconductor device package includes: (1) an interconnection unit including a patterned conductive layer; (2) an electrical interconnect extending substantially vertically from the conductive layer; (3) a semiconductor device adjacent to the interconnection unit and electrically connected to the conductive layer; (4) a package body: (a) substantially covering an upper surface of the interconnection unit and the device; and (b) defining an opening adjacent to an upper surface of the package body and exposing an upper surface of the interconnect; and (5) a connecting element electrically connected to the device, substantially filling the opening, and being exposed at an external periphery of the device package. The upper surface of the interconnect defines a first plane above a second plane defined by at least a portion of the upper surface of the interconnection unit, and below a third plane defined by the upper surface of the package body.
摘要:
The present invention provides a structure and a method for prevention leakage of a substrate strip. The substrate strip includes an edge portion and a plurality of units. A patterned metal layer on a surface of the substrate strip includes at least one plating bus extended to the edge portion, a plurality of plating lines at the units, a plurality of contact pads at the units and a plurality of fiducial marks at the edge portion. The plating bus has an extended trail having one end exposed out of the sidewall of the substrate strip. The fiducial marks and the contact pads are exposed out of a plurality of first openings of a solder mask. The solder mask also has a second opening at the edge portion exposing a portion of the plating bus to define a breaking hole. After forming a surface layer on the fiducial marks and the contact pads, the exposed portion of the plating bus is void of the surface layer. By removing the exposed portion of the plating bus, the breaking hole is formed to electrically isolate the extended trail from the contact pads in order to prevent a chip on the substrate strip from being damaged by ESD (Electrostatic Discharge) during packaging processes.
摘要:
A thermal enhanced ball grid array package is provided. The substrate for the package includes a metal core layer and at least a first patterned wiring layer provided thereon. A first insulating layer is provided between the first patterned wiring layer and the metal core layer. At least a second patterned wiring layer is provided on the substrate, opposite to the surface having the first patterned wiring layer. A second insulating layer having solder balls between the second patterned wiring layer and the metal core layer. The second patterned wiring layer is electrically connected to the first patterned wiring layer. Blind vias are provided in the second patterned wiring layer and the second insulating layer. A heat conductive material or solder material is filled into the blind vias to form thermal balls. The heat from the chip to the metal core layer is transferred directly through the thermal balls.
摘要:
A multi-chip package substrate for both flip-chip bumping and wire-bonding applications comprises a substrate body having a top surface and a bottom surface. A plurality of bumping pads and a plurality of wire-bonding pads are formed on the top surface. The bumping pads are disposed on the top surface of the substrate body and a pre-solder material is formed on the bumped pads. The wire-bonding pads are disposed on the top surface of the substrate body and a Ni/Au layer is formed on the wire-bonding pads. In order to avoid the bumping pads and the wire-bonding pads from oxidation during packaging processes. The pre-solder material fully covers the bumping pads to avoid the Au intermetallics generated in a plurality of bumps on a bumped chip during packaging processes. The reliability of the multi-chip stacked package for both flip-chip bumping and wire-bonding applications will be greatly improved.