摘要:
A polishing pad includes a polymer matrix and polyhedral oligomeric silsequioxane (“POSS”) molecules or soluble particles and a surfactant dispersed within the polymer matrix. A polishing pad can be formed by casting a liquid polymer on a conveyer belt having a casting surface with a set of projections and curing the liquid polymer on the conveyer belt such that a polymer matrix has a surface with a second set of projections complimentary to the first set of projections.
摘要:
Embodiments of a polishing article for processing a substrate are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer has an exposed surface adapted to polish a substrate. The fabric layer may be woven or non-woven. The conductive layer may be comprised of a soft material and, in one embodiment, the exposed surface may be planar.
摘要:
Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a plurality of discrete members and a plurality of apertures. Each of the plurality of discrete members include a first conductive layer and a second conductive layer, with an isolation layer therebetween, and a recess for byproduct accumulation. The second conductive layer comprises a plurality of reaction surfaces that are orthogonal to the upper and lower surfaces of the pad assembly.
摘要:
The embodiments of the invention generally relate to a method and apparatus for processing a substrate with reduced fluid consumption. Embodiments of the invention may be beneficially utilized in chemical mechanical and electrochemical mechanical polishing processes, among other processes where conservation of a processing fluid disposed on a rotating pad is desirable. In one embodiment, a processing fluid delivery arm assembly is provided that includes a nozzle assembly supported at a distal end of an arm. The nozzle assembly includes a nozzle that is adjustable to control the delivery of fluid exiting therefrom in two planes relative to the arm. In another embodiment, processing fluid in the form of electrolyte fills holes formed at least partially through the pad as they enter the wet zone, and a current is driven through the electrolyte, filling the holes between a substrate and an electrode disposed below the surface of the pad.
摘要:
Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.
摘要:
Embodiments of a processing pad assembly for processing a substrate are provided. The processing pad assembly includes an upper layer having a processing surface and an electrode having a top side coupled to the upper layer and a bottom side opposite the top side. A first set of holes is formed through the upper layer for exposing the electrode to the processing surface. At least one aperture is formed through the upper layer and the electrode.
摘要:
A method and apparatus for electrochemically processing metal and barrier materials is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode, pressing the substrate against a processing pad assembly, providing motion between the substrate and pad assembly in contact therewith and electrochemically removing a portion of the exposed layer during a first electrochemical processing step in a barrier processing station.
摘要:
Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.
摘要:
Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.
摘要:
A method and apparatus for evaluating a conditioned electrochemical mechanical polishing pad are provided. A polishing pad is conditioned using a first set of process conditions. A sheet wafer and a residue wafer are polished on the polishing pad. The removal rates of one or more materials from the sheet wafer and the residue wafer are measured. A normalized removal rate is calculated. The polishing pad is further conditioned if the normalized removal rate is not within a minimum value and a maximum value. In one embodiment, the normalized removal rate comprises a ratio of the removal rate of the residue wafer to the removal rate of the sheet wafer.