公开(公告)号：US06770547B1

公开(公告)日：2004-08-03

申请号：US09698186

申请日：2000-10-30

申请人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

发明人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

IPC分类号： H01L2120

CPC分类号： H01L23/3157 ,  H01L21/563 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3114 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/06102 ,  H01L2224/1403 ,  H01L2224/14515 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/15311 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01033 ,  H01L2924/01034

摘要： A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device.

摘要翻译： 一种半导体装置，其中可以在没有任何底部填充的情况下进行倒装芯片接合，并且其包括半导体器件，通过掩模印刷含有颗粒的电绝缘材料在半导体器件上形成的电绝缘层，以及形成在电学上的外部连接端子 绝缘层并与半导体器件的电极电连接。

公开(公告)号：US07057283B2

公开(公告)日：2006-06-06

申请号：US10825436

申请日：2004-04-16

申请人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

发明人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L23/3157 ,  H01L21/563 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3114 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/06102 ,  H01L2224/1403 ,  H01L2224/14515 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/15311 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01033 ,  H01L2924/01034

摘要： A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device. The electrically insulating layer is formed with a thickness so as to provide α-ray shielding of the semiconductor device.

摘要翻译： 一种半导体装置，其中可以在没有任何底部填充的情况下进行倒装芯片接合，并且其包括半导体器件，通过掩模印刷含有颗粒的电绝缘材料在半导体器件上形成的电绝缘层，以及形成在电学上的外部连接端子 绝缘层并与半导体器件的电极电连接。 电绝缘层形成为具有提供半导体器件的α射线屏蔽的厚度。

公开(公告)号：US06822317B1

公开(公告)日：2004-11-23

申请号：US09698168

申请日：2000-10-30

申请人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

发明人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

IPC分类号： H01L23495

CPC分类号： H01L23/3114 ,  H01L21/563 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3157 ,  H01L2224/05001 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/01034

摘要： A semiconductor apparatus comprising a semiconductor device, an electrically insulating layer formed on the semiconductor device, and an external connection terminal formed on the electrically insulating layer and electrically connected to an electrode of the semiconductor device, wherein a power/ground line and a signal line in a region of from an edge of the electrically insulating layer to a uniform-thickness flat portion of the electrically insulating layer are different in kind of wiring pattern from each other.

摘要翻译： 一种半导体器件，包括半导体器件，形成在半导体器件上的电绝缘层和形成在电绝缘层上并与半导体器件的电极电连接的外部连接端子，其中电源/接地线和信号线 在从电绝缘层的边缘到电绝缘层的均匀厚度平坦部分的区域中，布线图案的种类不同。

公开(公告)号：US06930388B2

公开(公告)日：2005-08-16

申请号：US09811401

申请日：2001-03-20

申请人： Yoshihide Yamaguchi ,  Hiroyuki Tenmei ,  Kosuke Inoue ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Naoya Kanda ,  Madoka Minagawa ,  Ichiro Anjo ,  Asao Nishimura ,  Kenji Ujiie ,  Akira Yajima

发明人： Yoshihide Yamaguchi ,  Hiroyuki Tenmei ,  Kosuke Inoue ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Naoya Kanda ,  Madoka Minagawa ,  Ichiro Anjo ,  Asao Nishimura ,  Kenji Ujiie ,  Akira Yajima

IPC分类号： H01L23/29 ,  H01L21/56 ,  H01L21/60 ,  H01L23/12 ,  H01L23/31 ,  H01L23/485 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/12 ,  H01L23/3114 ,  H01L23/3171 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/01034 ,  H01L2924/00014

摘要： A semiconductor device is provided which enables a flip chip connection without use of underfill. The semiconductor device includes a semiconductor element having circuit electrodes and a circuit surface coated with a protecting film. A stress relaxation layer is provided by coating a cured thermoplastic resin onto the protecting film of the circuit surface in a manner which leaves the circuit electrodes exposed and curing it and having an inclination in the edge portion thereof. A wiring layer with wirings is connected to each of the circuit electrodes and disposed so as to make an electrical connection from the circuit electrodes, via the edge portion of the stress relaxation layer, and to a desired portion on the surface of the stress relaxation layer. A protecting film is provided thereon, and an external connection terminal is also provided.

摘要翻译： 提供一种半导体器件，其能够在不使用底部填充物的情况下实现倒装芯片连接。 半导体器件包括具有电路电极的半导体元件和涂有保护膜的电路表面。 通过将固化的热塑性树脂以使电路电极暴露并固化并且在其边缘部分具有倾斜的方式将固化的热塑性树脂涂覆到电路表面的保护膜上来提供应力松弛层。 具有布线的布线层连接到每个电路电极，并布置成经由应力松弛层的边缘部分和电路电极的电连接到应力松弛层的表面上的期望部分 。 在其上设置有保护膜，并且还设置有外部连接端子。

公开(公告)号：US06624504B1

公开(公告)日：2003-09-23

申请号：US09698185

申请日：2000-10-30

申请人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

发明人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

IPC分类号： H01L23495

CPC分类号： H01L23/293 ,  H01L21/563 ,  H01L23/295 ,  H01L23/3114 ,  H01L23/3157 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/15311 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01033 ,  H01L2924/01034

摘要： A semiconductor apparatus includes a semiconductor device having circuit electrodes aligned centrally of the semiconductor apparatus. A first electrically insulating layer is formed on said semiconductor device with said circuit electrodes being exposed from said first insulating layer. A second electrically insulating layer is formed on said first insulating layer, and external connection terminals are formed on said second insulating layer. A wiring is formed on said second insulating layer to electrically connect said external connect terminals to said circuit electrodes of said semiconductor device, and a third electrically insulating layer is formed on said second insulating layer and on said wiring. Particles are provided in the second insulating layer to control a shape of said second insulating layer.

摘要翻译： 半导体装置包括具有对准半导体装置中心的电路电极的半导体装置。 在所述半导体器件上形成第一电绝缘层，所述电路电极从所述第一绝缘层露出。 在所述第一绝缘层上形成第二电绝缘层，在所述第二绝缘层上形成外部连接端子。 在所述第二绝缘层上形成布线，以将所述外部连接端子电连接到所述半导体器件的所述电路电极，并且在所述第二绝缘层和所述布线上形成第三电绝缘层。 在第二绝缘层中提供颗粒以控制所述第二绝缘层的形状。

公开(公告)号：US07084498B2

公开(公告)日：2006-08-01

申请号：US10271572

申请日：2002-10-17

申请人： Yoshihide Yamaguchi ,  Shigeharu Tsunoda ,  Hiroyuki Tenmei ,  Hiroshi Hozoji ,  Naoya Kanda

发明人： Yoshihide Yamaguchi ,  Shigeharu Tsunoda ,  Hiroyuki Tenmei ,  Hiroshi Hozoji ,  Naoya Kanda

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2221/68345 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/11 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01092 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00

摘要： A semiconductor device which includes a semiconductor chip, an insulating film formed on the semiconductor chip, a plurality of projected stress relaxation materials formed on the insulating film, projected electrodes covering at least tops of the stress relaxation materials, and wiring lines for electrically connecting the projected electrodes and element electrodes of the semiconductor chip.

摘要翻译： 一种半导体器件，包括半导体芯片，形成在半导体芯片上的绝缘膜，形成在绝缘膜上的多个突出的应力松弛材料，覆盖至少应力松弛材料顶部的突出电极和用于电连接 投影电极和半导体芯片的元件电极。

公开(公告)号：US07378333B2

公开(公告)日：2008-05-27

申请号：US11168460

申请日：2005-06-29

申请人： Toshiya Satoh ,  Masahiko Ogino ,  Tadanori Segawa ,  Yoshihide Yamaguchi ,  Hiroyuki Tenmei ,  Atsushi Kazama ,  Ichiro Anjo ,  Asao Nishimura

发明人： Toshiya Satoh ,  Masahiko Ogino ,  Tadanori Segawa ,  Yoshihide Yamaguchi ,  Hiroyuki Tenmei ,  Atsushi Kazama ,  Ichiro Anjo ,  Asao Nishimura

IPC分类号： H01L21/301

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0231 ,  H01L2224/0236 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014

摘要： The present invention is a semiconductor device having the semiconductor element obtained by cutting a semiconductor wafer with the electrode pad formed on one side along a scribe line, a semiconductor element protective layer on the semiconductor element which has a opening on the pad, a stress cushioning layer on the layer which has the opening on the pad, a lead wire portion reaching the layer from the electrode pad via the openings, external electrodes on the lead wire portion, and the conductor protective layer on the layers, the layer and the conductor protective layer forming the respective end faces on the end surface of the semiconductor element inside the scribe line and exposing the range from the end face of the end surface to the inside of the scribe line.

摘要翻译： 本发明是一种具有半导体元件的半导体器件，该半导体器件通过沿着划线在一侧形成电极焊盘切割半导体晶片而获得，半导体元件保护层在半导体元件上具有在该焊盘上的开口，应力缓冲 在该焊盘上具有开口的层上的引线部分，经由开口从电极焊盘到达层的引线部分，引线部分上的外部电极和层上的导体保护层，层和导体保护层 层，形成在划线内的半导体元件的端面上的各个端面，并露出从端面的端面到划线的内侧的范围。

公开(公告)号：US20050245061A1

公开(公告)日：2005-11-03

申请号：US11168460

申请日：2005-06-29

申请人： Toshiya Satoh ,  Masahiko Ogino ,  Tadanori Segawa ,  Yoshihide Yamaguchi ,  Hiroyuki Tenmei ,  Atsushi Kazama ,  Ichiro Anjo ,  Asao Nishimura

发明人： Toshiya Satoh ,  Masahiko Ogino ,  Tadanori Segawa ,  Yoshihide Yamaguchi ,  Hiroyuki Tenmei ,  Atsushi Kazama ,  Ichiro Anjo ,  Asao Nishimura

IPC分类号： H01L23/29 ,  H01L21/301 ,  H01L21/3205 ,  H01L21/56 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522 ,  H01L21/50

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0231 ,  H01L2224/0236 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014

摘要： The present invention is a semiconductor device having the semiconductor element obtained by cutting a semiconductor wafer with the electrode pad formed on one side along a scribe line, a semiconductor element protective layer on the semiconductor element which has a opening on the pad, a stress cushioning layer on the layer which has the opening on the pad, a lead wire portion reaching the layer from the electrode pad via the openings, external electrodes on the lead wire portion, and the conductor protective layer on the layers, the layer and the conductor protective layer forming the respective end faces on the end surface of the semiconductor element inside the scribe line and exposing the range from the end face of the end surface to the inside of the scribe line.

摘要翻译： 本发明是一种具有半导体元件的半导体器件，该半导体器件通过沿着划线在一侧形成电极焊盘切割半导体晶片而获得，半导体元件保护层在半导体元件上具有在该焊盘上的开口，应力缓冲 在该焊盘上具有开口的层上的引线部分，经由开口从电极焊盘到达层的引线部分，引线部分上的外部电极和层上的导体保护层，层和导体保护层 层，形成在划线内的半导体元件的端面上的各个端面，并露出从端面的端面到划线的内侧的范围。

公开(公告)号：US06946723B2

公开(公告)日：2005-09-20

申请号：US09809181

申请日：2001-03-16

申请人： Toshiya Satoh ,  Masahiko Ogino ,  Tadanori Segawa ,  Yoshihide Yamaguchi ,  Hiroyuki Tenmei ,  Atsushi Kazama ,  Ichiro Anjo ,  Asao Nishimura

发明人： Toshiya Satoh ,  Masahiko Ogino ,  Tadanori Segawa ,  Yoshihide Yamaguchi ,  Hiroyuki Tenmei ,  Atsushi Kazama ,  Ichiro Anjo ,  Asao Nishimura

IPC分类号： H01L23/29 ,  H01L21/301 ,  H01L21/3205 ,  H01L21/56 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522 ,  H01L23/495

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0231 ,  H01L2224/0236 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device having a semiconductor element is obtained by cutting a semiconductor wafer, having an electrode pad formed on one side thereof, along a scribe line. The semiconductor device has a semiconductor element protective layer on the semiconductor element so as to form an opening above the pad, a stress cushioning layer on the layer so as to form an opening on the pad, a lead wire portion reaching the layer from the electrode pad via the openings, external electrodes on the lead wire portion, and a conductor protective layer on the layer. The layer, the layer, and the conductor protective layer form respective end faces on the end surface of the semiconductor element inside the scribe line and expose a surface of the semiconductor element from the end face of the end surface to a point inside of the scribe line, thereby to expose the scribe line.

摘要翻译： 具有半导体元件的半导体器件通过沿着划线切割具有在其一侧形成的电极焊盘的半导体晶片来获得。 半导体器件在半导体元件上具有半导体元件保护层，以便在焊盘上形成开口，该层上的应力缓冲层在焊盘上形成开口，从电极到达该层的引线部分 通过开口焊盘，引线部分上的外部电极以及该层上的导体保护层。 层，层和导体保护层在划线内部的半导体元件的端面上形成相应的端面，并将半导体元件的表面从端表面的端面暴露于刻痕内侧 线，从而暴露划线。

公开(公告)号：US06791178B2

公开(公告)日：2004-09-14

申请号：US09997175

申请日：2001-11-30

申请人： Yoshihide Yamaguchi ,  Takao Terabayashi ,  Hiroyuki Tenmei ,  Hiroshi Hozoji ,  Naoya Kanda

发明人： Yoshihide Yamaguchi ,  Takao Terabayashi ,  Hiroyuki Tenmei ,  Hiroshi Hozoji ,  Naoya Kanda

IPC分类号： H01L2304

CPC分类号： H05K3/0044 ,  H01L21/486 ,  H01L23/147 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/5383 ,  H01L23/5384 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K1/0271 ,  H05K1/0306 ,  H05K1/115 ,  H05K3/4605 ,  H05K3/4688 ,  H05K2201/0154 ,  H05K2201/068 ,  H05K2201/0949 ,  H05K2201/09518 ,  H05K2201/09536 ,  H05K2201/0959 ,  H05K2201/09827 ,  H05K2203/025 ,  H05K2203/1581 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A multi-chip module has semiconductor devices and a wiring substrate for mounting the semiconductor devices, in which the wiring substrate comprises a glass substrate having holes formed by sand blasting and a wiring layer formed on the surface of the glass substrate and having wiring and an insulation layer.

摘要翻译： 多芯片模块具有半导体器件和用于安装半导体器件的布线基板，其中布线基板包括具有通过喷砂形成的孔的玻璃基板和形成在玻璃基板的表面上的布线层并具有布线和 绝缘层。