公开(公告)号：US07728431B2

公开(公告)日：2010-06-01

申请号：US11810070

申请日：2007-06-04

申请人： Yoshimichi Harada ,  Akiyoshi Aoyagi ,  Hiroshi Asami

发明人： Yoshimichi Harada ,  Akiyoshi Aoyagi ,  Hiroshi Asami

IPC分类号： H01L23/48

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/02126 ,  H01L2224/02255 ,  H01L2224/03019 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/0555 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/11902 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Herein disclosed an electronic component having a passivation layer in which an opening that exposes a part of a pad electrode is formed, an underlying metal layer formed on the pad electrode and the passivation layer, and a barrier metal layer formed on the underlying metal layer for an external connection electrode, the electronic component including a recess or/and a projection configured to be provided under the barrier metal layer outside or/and inside the opening, the underlying metal layer being formed on the recess or/and the projection and having a surface shape that follows the recess or/and the projection.

摘要翻译： 这里公开了一种具有钝化层的电子部件，其中形成有露出焊盘电极的一部分的开口，形成在焊盘电极和钝化层上的下面的金属层以及形成在下面的金属层上的阻挡金属层 外部连接电极，所述电子部件包括凹部或/和突出部，所述突起构造成设置在所述阻挡金属层的下方或/或所述开口内侧，所述下部金属层形成在所述凹部或/和所述突起上，并且具有 跟随凹部或/和突起的表面形状。

公开(公告)号：US20070290343A1

公开(公告)日：2007-12-20

申请号：US11810070

申请日：2007-06-04

申请人： Yoshimichi Harada ,  Akiyoshi Aoyagi ,  Hiroshi Asami

发明人： Yoshimichi Harada ,  Akiyoshi Aoyagi ,  Hiroshi Asami

IPC分类号： H01L23/48

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/02126 ,  H01L2224/02255 ,  H01L2224/03019 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/0555 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/11902 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Herein disclosed an electronic component having a passivation layer in which an opening that exposes a part of a pad electrode is formed, an underlying metal layer formed on the pad electrode and the passivation layer, and a barrier metal layer formed on the underlying metal layer for an external connection electrode, the electronic component including a recess or/and a projection configured to be provided under the barrier metal layer outside or/and inside the opening, the underlying metal layer being formed on the recess or/and the projection and having a surface shape that follows the recess or/and the projection.

摘要翻译： 这里公开了一种具有钝化层的电子部件，其中形成有露出焊盘电极的一部分的开口，形成在焊盘电极和钝化层上的下面的金属层以及形成在下面的金属层上的阻挡金属层 外部连接电极，所述电子部件包括凹部或/和突出部，所述突起构造成设置在所述阻挡金属层的下方或/或所述开口内侧，所述下部金属层形成在所述凹部或/和所述突起上，并且具有 跟随凹部或/和突起的表面形状。

公开(公告)号：US20120286387A1

公开(公告)日：2012-11-15

申请号：US13553389

申请日：2012-07-19

申请人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

发明人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

IPC分类号： H01L31/0224

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L27/14634 ,  H01L27/14636 ,  H01L31/0224 ,  H01L2224/02372 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16238 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device including a semiconductor substrate having oppositely facing first and second surfaces, the first surface being an active surface and provided with an electronic element thereon, a pad electrode to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening formed to reach the pad electrode from a bottom surface of the first opening and having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

摘要翻译： 一种半导体器件，包括具有相对面对的第一表面和第二表面的半导体衬底，所述第一表面是活性表面，并且在其上设置有电子元件，焊接电极，用于在所述电子元件的周边部分中连接到所述电子元件， 活性表面，从第二表面朝向焊盘电极延伸以便不到达半导体衬底的第一表面的第一开口，形成为从第一开口的底表面到达焊盘电极并具有较小直径的第二开口 形成为覆盖第一开口和第二开口的侧壁表面的绝缘层和在绝缘层内部形成的导电层，以覆盖至少绝缘层的内壁表面和 第二开口的底面。

公开(公告)号：US08252628B2

公开(公告)日：2012-08-28

申请号：US12046637

申请日：2008-03-12

申请人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

发明人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

IPC分类号： H01L21/76

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L27/14634 ,  H01L27/14636 ,  H01L31/0224 ,  H01L2224/02372 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16238 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having first and second surfaces opposite each other, the first surface being an active surface by provided with an electronic element thereon, a pad electrode formed to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening, formed to reach the pad electrode from a bottom surface of the first opening, having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

摘要翻译： 半导体器件包括具有彼此相对的第一和第二表面的半导体衬底，第一表面是通过在其上设置有电子元件的有源表面，形成为在电子元件的周边部分中连接到电子元件的焊盘电极 在所述活性表面上具有从所述第二表面向所述焊盘电极延伸以便不到达所述半导体衬底的所述第一表面的第一开口，形成为从所述第一开口的底表面到达所述焊盘电极的第二开口， 直径小于第一开口的直径，形成为覆盖第一开口和第二开口的侧壁表面的绝缘层，以及形成在绝缘层内部的导电层，以至少覆盖绝缘层的内壁表面 层和第二开口的底表面。

公开(公告)号：US20080224249A1

公开(公告)日：2008-09-18

申请号：US12046637

申请日：2008-03-12

申请人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

发明人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L27/14634 ,  H01L27/14636 ,  H01L31/0224 ,  H01L2224/02372 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16238 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having first and second surfaces opposite each other, the first surface being an active surface by provided with an electronic element thereon, a pad electrode formed to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening, formed to reach the pad electrode from a bottom surface of the first opening, having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

摘要翻译： 半导体器件包括具有彼此相对的第一和第二表面的半导体衬底，第一表面是通过在其上设置有电子元件的有源表面，形成为在电子元件的周边部分中连接到电子元件的焊盘电极 在所述活性表面上具有从所述第二表面向所述焊盘电极延伸以便不到达所述半导体衬底的所述第一表面的第一开口，形成为从所述第一开口的底表面到达所述焊盘电极的第二开口， 直径小于第一开口的直径，形成为覆盖第一开口和第二开口的侧壁表面的绝缘层，以及形成在绝缘层内部的导电层，以至少覆盖绝缘层的内壁表面 层和第二开口的底表面。

公开(公告)号：US08222744B2

公开(公告)日：2012-07-17

申请号：US12688029

申请日：2010-01-15

申请人： Yoshimichi Harada ,  Makoto Murai ,  Takayuki Tanaka ,  Takuya Nakamura

发明人： Yoshimichi Harada ,  Makoto Murai ,  Takayuki Tanaka ,  Takuya Nakamura

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L21/563 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device includes: a mounted body in which a wiring pattern is formed on a first main surface; a semiconductor chip mounted on the surface of the mounted body on which the wiring pattern is formed; an underfill material which is filled between the mounted body and the semiconductor chip and forms a fillet on an outer peripheral part of the semiconductor chip; and an injection section which is disposed on the mounted body and on an outside of a side section, on which the fillet is formed to be longest, of four side sections defining a chip mount area on which the semiconductor chip is mounted, and guides the underfill material to between the mounted body and the semiconductor chip.

摘要翻译： 半导体器件包括：安装体，其中在第一主表面上形成布线图案; 安装在其上形成有布线图案的安装体的表面上的半导体芯片; 填充在所述安装体和所述半导体芯片之间的底部填充材料，在所述半导体芯片的外周部形成圆角; 以及喷射部，其设置在所述安装体上并且在所述圆角形状最远的侧部的外侧上限定安装所述半导体芯片的芯片安装区域的四个侧部，并且引导所述注射部 底部填充材料到安装体和半导体芯片之间。

公开(公告)号：US07482694B2

公开(公告)日：2009-01-27

申请号：US10509898

申请日：2003-03-31

申请人： Hiroto Ohtake ,  Munehiro Tada ,  Yoshimichi Harada ,  Ken′ichiro Hijioka ,  Shinobu Saitoh ,  Yoshihiro Hayashi

发明人： Hiroto Ohtake ,  Munehiro Tada ,  Yoshimichi Harada ,  Ken′ichiro Hijioka ,  Shinobu Saitoh ,  Yoshihiro Hayashi

IPC分类号： H01L23/522

CPC分类号： H01L21/76831 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813

摘要： A technique is provided for protecting an interlayer insulating film formed of an organic low dielectric constant material from any damage applied in a semiconductor process, and for attaining the decrease leak current in the interlayer insulating film, resulting in the improvement of reliability of a semiconductor device. The semiconductor device according to the present invention has an organic insulating films having openings. The organic insulating films have modified portions facing the openings. The modified portions contains fluorine atoms and nitrogen atoms. The concentration of the fluorine atoms in the modified portions is lower than the concentration of the nitrogen atoms. The above-mentioned modified layers protect the semiconductor device from the damage applied in the semiconductor process, while suppressing the corrosion of the conductors embedded in the openings.

摘要翻译： 提供了一种用于保护由有机低介电常数材料形成的层间绝缘膜的技术，用于在半导体工艺中施加的任何损坏，并且为了获得在层间绝缘膜中的减小的漏电流，从而提高半导体器件的可靠性 。 根据本发明的半导体器件具有具有开口的有机绝缘膜。 有机绝缘膜具有面向开口的改性部分。 改性部分含有氟原子和氮原子。 改性部分中的氟原子的浓度低于氮原子的浓度。 上述改性层保护半导体器件免受在半导体工艺中的损坏，同时抑制嵌入在开口中的导体的腐蚀。

公开(公告)号：US09041199B2

公开(公告)日：2015-05-26

申请号：US12650654

申请日：2009-12-31

申请人： Makoto Murai ,  Yoshimichi Harada

发明人： Makoto Murai ,  Yoshimichi Harada

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L21/56 ,  H01L23/498 ,  H01L25/065 ,  H01L23/31 ,  H01L25/03

CPC分类号： H01L24/12 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/16 ,  H01L24/17 ,  H01L24/28 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L25/03 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/1132 ,  H01L2224/1134 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83051 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/92125 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06582 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor device includes: a mount body; a semiconductor chip mounted on the mount body via projecting connecting terminals; and a filling resin filled between the mount body and the semiconductor chip to seal the connecting terminals, the filling resin being retained inside the semiconductor chip in such a way as not to run out of at least one side portion in four side portions defining an outer peripheral portion of the semiconductor chip.

摘要翻译： 半导体器件包括：安装体; 通过突出的连接端子安装在安装体上的半导体芯片; 以及填充树脂，其填充在所述安装体和所述半导体芯片之间以密封所述连接端子，所述填充树脂保持在所述半导体芯片的内部，使得不会在限定外部的四个侧部中的至少一个侧部中流出 半导体芯片的周边部分。

公开(公告)号：US20110136342A1

公开(公告)日：2011-06-09

申请号：US13027614

申请日：2011-02-15

申请人： Yoshimichi Harada ,  Masami Suzuki ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Tatsuo Suemasu ,  Hideyuki Wada ,  Masanobu Saruta

发明人： Yoshimichi Harada ,  Masami Suzuki ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Tatsuo Suemasu ,  Hideyuki Wada ,  Masanobu Saruta

IPC分类号： H01L21/768

CPC分类号： H01L27/14618 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/16 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2224/05599

摘要： A semiconductor apparatus including a semiconductor substrate, an insulating layer, a via hole, and a through-hole interconnection is provided. The insulating layer is formed on the semiconductor substrate. The via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has a conductive layer formed on an insulating layer in the via hole. The surface of the insulating layer formed on the inner surface of the via hole is substantially planarized by filling a recessed portion on a boundary between the semiconductor substrate and the insulating layer formed on the semiconductor substrate.

摘要翻译： 提供了包括半导体衬底，绝缘层，通孔和通孔互连的半导体器件。 绝缘层形成在半导体衬底上。 通孔形成为穿过半导体衬底和绝缘层。 通孔互连具有形成在通孔中的绝缘层上的导电层。 通过在半导体衬底和形成在半导体衬底上的绝缘层之间的边界填充凹陷部分，在通孔的内表面上形成的绝缘层的表面基本平坦化。

公开(公告)号：US20090200679A1

公开(公告)日：2009-08-13

申请号：US12348988

申请日：2009-01-06

申请人： Yoshimichi Harada ,  Masami Suzuki ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Tatsuo Suemasu ,  Hideyuki Wada ,  Masanobu Saruta

发明人： Yoshimichi Harada ,  Masami Suzuki ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Tatsuo Suemasu ,  Hideyuki Wada ,  Masanobu Saruta

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L27/14618 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/16 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2224/05599

摘要： A semiconductor apparatus including a semiconductor substrate, an insulating layer, a via hole, and a through-hole interconnection is provided. The insulating layer is formed on the semiconductor substrate. The via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has a conductive layer formed on an insulating layer in the via hole. The surface of the insulating layer formed on the inner surface of the via hole is substantially planarized by filling a recessed portion on a boundary between the semiconductor substrate and the insulating layer formed on the semiconductor substrate.

摘要翻译： 提供了包括半导体衬底，绝缘层，通孔和通孔互连的半导体器件。 绝缘层形成在半导体衬底上。 通孔形成为穿过半导体衬底和绝缘层。 通孔互连具有形成在通孔中的绝缘层上的导电层。 通过在半导体衬底和形成在半导体衬底上的绝缘层之间的边界填充凹陷部分，在通孔的内表面上形成的绝缘层的表面基本平坦化。