摘要:
The present invention provides a thermal stable low elastic modulus material, which has high thermal stability, is little in change in dynamic characteristics such as coefficient of thermal expansion and elastic modulus within a temperature of −50° C. to 300° C., has an elastic modulus at room temperature of 2-0.01 GPa and is high in reliability of electric insulation regardless of a temperature fluctuation, and provides a semiconductor device using the same. The present invention also provides a thermal stable low elastic modulus resin composition obtained by heat-curing a mixture containing a polyimide, polyamide-imide or polyamide resin or resin precursor, whose cured product has an elastic modulus measured at −50° C. of 2-0.01 GPa, and an oligomer of an organosilicon compound having a functional group capable of causing addition reaction with an NH and/or COOH group.
摘要:
The present invention provides a thermal stable low elastic modulus material, which has high thermal stability, is little in change in dynamic characteristics such as coefficient of thermal expansion and elastic modulus within a temperature of −50° C. to 300° C., has an elastic modulus at room temperature of 2-0.01 GPa and is high in reliability of electric insulation regardless of a temperature fluctuation, and provides a semiconductor device using the same. The present invention also provides a thermal stable low elastic modulus resin composition obtained by heat-curing a mixture containing a polyimide, polyamide-imide or polyamide resin or resin precursor, whose cured product has an elastic modulus measured at −50° C. of 2-0.01 GPa, and an oligomer of an organosilicon compound having a functional group capable of causing addition reaction with an NH and/or COOH group.
摘要:
An electronic device for high frequency signals having a small dielectric loss and a high efficiency is provided, in which a low dielectric loss tangent resin composition is used, for coping with high frequency signals, as an insulating layer. The electronic device is fabricated using an insulating layer containing a crosslinked structure of a crosslinking ingredient represented by the following general formula (I): (where R represents a hydrocarbon skeleton, R1, which may be identical or different from each other, represents a hydrogen atom or a hydrocarbon group of 1 to 20 carbon atoms, R2, R3 and R4, which may be identical or different from each other, each represents a hydrogen atom or a hydrocarbon group of 1 to 6 carbon atoms, m is an integer of 1 to 4 and n is an integer of 2 or greater).
摘要:
There is provided a resin composition suitable for insulating materials for use in electronic parts for handling high frequency signals, low in dielectric constant and low in dielectric dissipation factor, capable of forming thin film by low temperature curing, excellent in the adhesiveness to conductive foil and excellent in flexibility; a cured product derived from the composition; and a film substrate and an electronic part using the composition. A resin composition, low in dielectric dissipation factor, comprising: a crosslinking component having a weight averaged molecular weight of 1,000 or less and a plurality of styrene groups represented by the following general formula: wherein R represents a hydrocarbon moiety; each R1, which may be the same or different, represents a hydrogen atom or a C1-20 hydrocarbon group; R2, R3 and R4, which may be the same or different, represent a hydrogen atom or a C1-6 alkyl group; and m is an integer of 1 to 4, and n is an integer of 2 or more; and a rubber component having a weight averaged molecular weight of 5,000 or more and styrene units; a cured product; and a film substrate and an electronic part using the composition.
摘要:
A curing low dielectric loss tangent film using a low dielectric loss tangent composition containing a polyfunctional styrene compound having excellent dielectric characteristics, and a wiring film using the same as an insulating layer are provided. The low dielectric loss tangent film contains a high molecular weight material and a crosslinking ingredient with a weight average molecular weight of 1000 or less having a plurality of styrene groups shown by the following general formula: (where R represents a hydrocarbon skeleton, R1, which may be identical or different with each other, represents a hydrogen atom or a hydrocarbon group of 1 to 20 carbon atoms, R2, R3 and R4, which may be identical or different with each other, each represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms, m represents an integer of 1 to 4, and n represents an integer of 2 or greater).
摘要:
A semiconductor device wherein a resin containing as a cross-linking component a compound having a plurality of styrene group and represented by chemical formula [1] is used as an insulating material: where R is a hydrocarbon structure which may have a substituent group or groups, R1 is hydrogen, methyl, or ethyl, m is and integer of 1 to 4, and n is an integer of not less than 2. With this, a semiconductor device and a semiconductor package which show excellent transmission characteristics and less power consumption are provided.
摘要翻译:使用含有作为交联成分的具有多个苯乙烯基并由化学式[1]表示的化合物的树脂作为绝缘材料的半导体器件:其中R为可具有取代基或烃基的烃结构 R 1为氢,甲基或乙基,m为1〜4的整数,n为2以上的整数。由此,具有优异的透射特性和较少的半导体器件和半导体封装 提供功耗。
摘要:
An organic/inorganic oxide mixture has high capacitance density so as to realize a capacitor material that can be self-contained in a substrate. The mixture film made of inorganic oxide particle has a mean particle size of less than 90 nm dispersed in organic polymer, of which relative dielectric constant is more than 10 and thickness is less than 900 nm.
摘要:
According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.
摘要:
An automotive wheel includes a wheel disc in which a hat section is provided outside a hub mounting section. A hat inner inclined surrounding section of the hat section includes an inner convex surrounding section protruding to a surface side in a curved shape, and an inner lower concave surrounding section continuously formed with an inner peripheral edge of the inner convex surrounding section, continuously formed with an outer peripheral edge of a hub surface rounded section, and protruding to the back side in a curved shape.
摘要:
According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a third semiconductor layer and a first electrode. The first semiconductor layer of a first conductivity type has a first major surface provided with a first surface asperity. The second semiconductor layer of a second conductivity type is provided on an opposite side of the first semiconductor layer from the first major surface. The light-emitting layer is provided between the first and second semiconductor layers. The first semiconductor layer is disposed between a third semiconductor layer and the light-emitting layer. The third semiconductor layer has an impurity concentration lower than an impurity concentration of the first semiconductor layer, and includes an opening exposing the first surface asperity. The first electrode is in contact with the first surface asperity through the opening, and reflective to emission light emitted from the light-emitting layer.