公开(公告)号：WO2006118799A1

公开(公告)日：2006-11-09

申请号：PCT/US2006/014781

申请日：2006-04-19

Applicant: ADVANCED MICRO DEVICES, INC. ,  KAMMLER, Thorsten ,  BIERSTEDT, Helmut ,  LUNING, Scott, D.

Inventor： KAMMLER, Thorsten ,  BIERSTEDT, Helmut ,  LUNING, Scott, D.

IPC: H01L21/336 ,  H01L29/786 ,  H01L29/78 ,  H01L21/20

CPC classification number: H01L29/7833 ,  H01L21/0206 ,  H01L21/823814 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/78621

Abstract: A first gate structure and a second gate structure are formed overlying a semiconductor substrate. A first protective layer is formed overlying the first gate structure and an associate source drain region. A first epitaxial layer is formed overlying the second source drain prior to removal of the first protective layer.

Abstract translation: 第一栅极结构和第二栅极结构形成在半导体衬底上。 第一保护层形成在第一栅极结构和相关源极漏极区之上。 在去除第一保护层之前，在第二源极漏极上形成第一外延层。

公开(公告)号：WO2006054996A1

公开(公告)日：2006-05-26

申请号：PCT/US2004/038761

申请日：2004-11-19

Applicant: HONEYWELL INTERNATIONAL INC. ,  YELLOWAGA, Deborah, L. ,  PALMER, Ben ,  STARZYNSKI, John, S. ,  MCFARLAND, John, A.

Inventor： YELLOWAGA, Deborah, L. ,  PALMER, Ben ,  STARZYNSKI, John, S. ,  MCFARLAND, John, A.

IPC: C09K13/06

CPC classification number: C09K13/08 ,  C11D1/004 ,  C11D3/042 ,  C11D7/08 ,  C11D7/50 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/31111 ,  H01L21/31133

Abstract: Removal chemistry solutions are described herein that include at least one low H 2 O content fluorine-based constituent and at least one solvent or solvent mixture. Removal chemistry solutions also include: hydrogen fluoride gas, and at least one solvent or solvent mixture. Methods are described herein for producing removal chemistry solutions that include providing at least one gaseous low H 2 O content fluorine-based constituent, providing at least one solvent or solvent mixture, and bubbling the at least one low H 2 O content fluorine-based constituent into the at least one solvent or solvent mixture to form the removal chemistry solution. Methods for producing removal chemistry solutions are also described that include: providing at least one low H 2 O content fluorine-based constituent, providing at least one solvent or solvent mixture, and blending the at least one low H 2 O content fluorine-based constituent into the at least one solvent or solvent mixture to form the removal chemistry solution. Additional methods of forming a removal chemistry solution include: providing at least one gaseous anhydrous fluorine-based constituent, providing at least one solvent or solvent mixture, and bubbling the at least one anhydrous fluorine-based constituent into the at least one solvent or solvent mixture to form the solution. Also, methods of forming a removal chemistry solution, as described herein include: providing hydrogen fluoride gas, providing at least one solvent or solvent mixture, and bubbling the hydrogen fluoride gas into the at least one solvent or solvent mixture to form the solution.

Abstract translation: 本文描述了除去化学溶液，其包括至少一种低H 2 O 2含量的氟基组分和至少一种溶剂或溶剂混合物。 去除化学溶液还包括：氟化氢气体和至少一种溶剂或溶剂混合物。 本文描述了用于产生除去化学溶液的方法，其包括提供至少一种低含量H 2 O 2的低含量气态成分，提供至少一种溶剂或溶剂混合物，并鼓泡至少一种低H 将含O 2的含氟基成分加入到至少一种溶剂或溶剂混合物中以形成去除化学溶液。 还描述了用于产生除去化学溶液的方法，其包括：提供至少一种低H 2 O 2含量的氟基组分，提供至少一种溶剂或溶剂混合物，并将至少一种低H 将含O 2的含氟基成分加入到至少一种溶剂或溶剂混合物中以形成去除化学溶液。 形成去除化学溶液的其它方法包括：提供至少一种无水氟化基的气态成分，提供至少一种溶剂或溶剂混合物，并将至少一种无水氟基成分鼓泡到至少一种溶剂或溶剂混合物中 形成解决方案。 此外，如本文所述形成去除化学溶液的方法包括：提供氟化氢气体，提供至少一种溶剂或溶剂混合物，并将氟化氢气体鼓泡到至少一种溶剂或溶剂混合物中以形成溶液。

公开(公告)号：WO2006039090A2

公开(公告)日：2006-04-13

申请号：PCT/US2005032411

申请日：2005-09-13

Applicant: LAM RES CORP ,  LEONTE OANA ,  CHEBI ROBERT

Inventor： LEONTE OANA ,  CHEBI ROBERT

IPC: C23G1/00 ,  C11D7/32

CPC classification number: C11D3/044 ,  C11D1/523 ,  C11D1/90 ,  C11D3/2058 ,  C11D3/2079 ,  C11D3/30 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/261 ,  C11D7/265 ,  C11D7/3218 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/0206

Abstract: A solution for cleaning silicon semiconductors or silicon oxides, and methods for cleaning silicon semiconductors or silicon oxides using the solution, is disclosed. The solution includes hydrogen peroxide, ammonium hydroxide, an alkanolamine, and at least one of a tetraalkylammonium hydroxide, an alkanolamide, an amido-betaine, an c ca dihydroxyphenol, a carboxylic acid, a phosphonic acid, a chelating agent or a surfactant. The weight ratio of ammonium hydroxide to peroxide to water is between about 1:1:5 and 1:1-4:50, the weight ratio of ammonium hydroxide to water is between 1:5 and 1:50, and the molar ratio of component A to ammonium hydroxide is between 1:10 and 1:5000 is disclosed. The solution can achieve the efficiency equivalent to that of the conventional RCA two-step cleaning solution within a shorter time by one step preserving the silicon and silicon oxide substrate integrity and effectively remove contaminants such as organics, particles and metals from the surfaces of silicon semiconductors and silicon oxides without using strong acids such as HCI and sulfuric acid.

Abstract translation: 公开了一种用于清洁硅半导体或硅氧化物的解决方案，以及使用该溶液来清洗硅半导体或氧化硅的方法。 溶液包括过氧化氢，氢氧化铵，链烷醇胺，以及四烷基氢氧化铵，链烷醇酰胺，酰氨基 - 甜菜碱，c-二羟基苯酚，羧酸，膦酸，螯合剂或表面活性剂中的至少一种。 氢氧化铵与过氧化氢与水的重量比约为1:1:5:1:1-4:50，氢氧化铵与水的重量比为1:5至1:50，摩尔比 组分A与氢氧化铵的摩尔比为1:10至1:5000。 该解决方案可以在较短时间内实现与传统RCA两步清洗溶液相当的效率，通过一步保持硅和氧化硅底物的完整性，并有效地从硅半导体表面去除有机物，颗粒和金属等污染物 和氧化硅，而不使用强酸如HCl和硫酸。

公开(公告)号：WO2004059700A3

公开(公告)日：2004-11-04

申请号：PCT/US0340439

申请日：2003-12-17

Applicant: ADVANCED TECH MATERIALS

Inventor： MINSEK DAVID W ,  MURPHY MELISSA K ,  BERNHARD DAVID D ,  BAUM THOMAS H

IPC: C11D7/06 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  G03F7/42 ,  H01L21/306 ,  H01L21/311 ,  G03C5/00 ,  B08B3/00

CPC classification number: C11D3/30 ,  C11D1/72 ,  C11D3/044 ,  C11D3/3947 ,  C11D3/3955 ,  C11D3/3956 ,  C11D3/43 ,  C11D7/06 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/20 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/31133 ,  Y10S438/906

Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

Abstract translation: 本文公开了一种用于半导体处理的组合物和方法。 在一个实施方案中，提供了用于去除光致抗蚀剂的湿清洁组合物。 组合物包含强碱; 氧化剂 和极性溶剂。 在另一个实施例中，提供了一种去除光致抗蚀剂的方法。 该方法包括以下步骤：施加包含约0.1至约30重量％的强碱的湿清洁组合物; 约1至约30重量％的氧化剂; 约20至约95重量％的极性溶剂; 并去除光致抗蚀剂。

公开(公告)号：WO2002089191A2

公开(公告)日：2002-11-07

申请号：PCT/IB2002/001344

申请日：2002-04-12

Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.

Inventor： VAN DE VEN, Gerardus, E., A., M. ,  BOLT, Michael, J., B.

IPC: H01L21/311

CPC classification number: H01L21/0206 ,  H01L21/28518 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/31138 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device (2) on a substrate (1), said semiconductor device comprising an active area (5, 6, 16) in the substrate (1) demarcated by spacers (10-13, 20-23) and arranged so as to contact an interconnect (29) including TiSi2; the method including, depositing an oxide layer (26) on the substrate (1); depositing and patterning a resist layer (27) on the oxide (26); reactive ion etching of the oxide (26) to demarcate the active area (5, 6, 16), using the patterned resist layer (27); removing the resist (27) by a dry strip plasma containing at least oxygen; depositing titanium(28) on the oxide (26) and the active area (5, 6, 16); forming the interconnect (29) as self-aligned TiSi2 by a first anneal, a selective wet etch, and a second anneal; the dry strip plasma including, as a second gaseous constituent, at least fluoride.

Abstract translation: 一种在衬底（1）上制造半导体器件（2）的方法，所述半导体器件包括在衬底（1）中由间隔物（10-13,20-23）划分的有源区（5,6,16）和 布置成与包括TiSi 2的互连（29）接触; 所述方法包括：在所述基板（1）上沉积氧化物层（26）; 在所述氧化物（26）上沉积和图案化抗蚀剂层（27）; 使用图案化的抗蚀剂层（27），氧化物（26）的反应离子蚀刻来划定有源区域（5,6,16）。 通过至少含有氧的干燥带状等离子体除去抗蚀剂（27）; 在氧化物（26）和有源区（5,6,16）上沉积钛（28）; 通过第一退火，选择性湿蚀刻和第二退火将所述互连（29）形成为自对准TiSi 2; 所述干燥条带等离子体包括至少氟化物作为第二气体成分。

公开(公告)号：WO01084612A1

公开(公告)日：2001-11-08

申请号：PCT/US2001/004026

申请日：2001-02-08

IPC: C23C14/00 ,  C23C14/02 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L21/316 ,  H01L21/318 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/51 ,  H01L21/302 ,  H01L21/31 ,  H01L21/461 ,  H01L21/469

CPC classification number: H01L21/28194 ,  C23C14/0031 ,  C23C14/022 ,  H01J2237/0812 ,  H01L21/02054 ,  H01L21/0206 ,  H01L21/0217 ,  H01L21/02172 ,  H01L21/02247 ,  H01L21/02263 ,  H01L21/02299 ,  H01L21/02307 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31111 ,  H01L21/31604 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/3185 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: Methods are disclosed for gas-cluster ion-beam deposition of thin films on silicon wafers rendered free of native oxides by termination of the surface bonds and subsequent reactive deposition. Hydrogen termination of the surface of silicon renders it inert to reoxidation from oxygen-containing enviornmental gasses, even those found as residue in vacuum systems, such as those used to deposit films. Nitrogen termination improves the interface with overlying metal-oxide thin films. The film is formed in intimate contact with the silicon crystal surface forming a nearly ideal interface.

Abstract translation: 公开了用于通过终止表面键和随后的反应性沉积而在不含天然氧化物的硅晶片上进行气体簇离子束沉积薄膜的方法。 硅表面的氢终止使其对含氧环境气体的再氧化是惰性的，甚至是在真空系统中发现的残留物，例如用于沉积膜的那些。 氮终端改善了覆盖金属氧化物薄膜的界面。 该膜与硅晶体表面紧密接触形成几乎理想的界面。

公开(公告)号：WO99015345A1

公开(公告)日：1999-04-01

申请号：PCT/US1998/018109

申请日：1998-09-01

IPC: C11D3/00 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  G03F7/42 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3213 ,  B44C1/22 ,  H01L21/00

CPC classification number: C11D7/06 ,  C11D3/0073 ,  C11D7/105 ,  C11D7/265 ,  C11D7/3245 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/425 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/32135

Abstract: A process of treating a substrate having photoresist applied thereto, comprising the steps of: (a) removing said photoresist from said substrate by a method selected from the group consisting of photoresist stripping, plasma etch residue cleaning, or a combination thereof; and (b) rinsing said substrate with a non-corrosive rinsing composition comprising: (1) water; and (2) one or more water-soluble corrosion inhibitors selected from the group consisting essentially of hydroxylamine, at least one hydroxylammonium salt, at least one water-soluble organic acid, at least one amino acid, and combinations thereof.

Abstract translation: 一种处理具有光刻胶施加到其上的基板的方法，包括以下步骤：（a）通过选自光致抗蚀剂剥离，等离子蚀刻残渣清洗或其组合的方法从所述基板上去除所述光致抗蚀剂; 和（b）用非腐蚀性漂洗组合物冲洗所述基材，所述组合物包括：（1）水; 和（2）一种或多种选自羟胺，至少一种羟基铵盐，至少一种水溶性有机酸，至少一种氨基酸及其组合的水溶性腐蚀抑制剂。

公开(公告)号：WO2018232103A1

公开(公告)日：2018-12-20

申请号：PCT/US2018/037512

申请日：2018-06-14

Applicant: APPLIED MATERIALS, INC.

Inventor： KE, Chang ,  ZHOU, Lei ,  LIU, Biao ,  PAN, Cheng ,  GUO, Yuanhong ,  WU, Liqi ,  JACKSON, Michael S. ,  GODET, Ludovic ,  KAUFMAN-OSBORN, Tobin ,  CHEN, Erica ,  MA, Paul F.

IPC: H01L21/027 ,  G03F7/20 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/0271 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02181 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/67207 ,  H01L21/6831

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：WO2018176537A1

公开(公告)日：2018-10-04

申请号：PCT/CN2017/081774

申请日：2017-04-25

Applicant: 深圳市华星光电半导体显示技术有限公司

Inventor： 谢华飞

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/12 ,  H01L29/16

CPC classification number: H01L29/78684 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09D5/24 ,  C09D7/40 ,  C09D7/67 ,  H01L21/0206 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02271 ,  H01L21/02343 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/042 ,  H01L21/043 ,  H01L21/044 ,  H01L27/1292 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/16 ,  H01L29/1604 ,  H01L29/1606 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66045 ,  H01L29/66227 ,  H01L29/66742 ,  H01L29/78696

Abstract: 提供了一种场效应晶体管及其制备方法，该方法包括在基板上沉积第一绝缘层（S11）；在第一绝缘层上形成源极及漏极（S12）；形成覆盖源极及漏极的碳量子点有源层（S13）；在碳量子点有源层上依次形成第二绝缘层及栅极（S14）。通过上述方法，使用碳量子点为材料制备场效应晶体管中的有源层，丰富了场效应晶体管的制备材料，减少了现有技术中使用金属点膜层制备有源层时对环境的污染，同时降低了对金属元素的依赖性。

公开(公告)号：WO2017053126A1

公开(公告)日：2017-03-30

申请号：PCT/US2016/051487

申请日：2016-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： OLSEN, Christopher S. ,  STONE, Peter ,  KUO, Teng-Fang ,  HSIEH, Ping Han ,  VELLAIKAL, Manoj

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/3213

CPC classification number: H01L21/02658 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68742

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

Abstract translation: 本公开的实施方式一般涉及用于在衬底表面上进行外延沉积的方法和装置。 更具体地，本公开的实施方案一般涉及在外延沉积之前用于表面制备的方法和装置。 在一个实施方式中，提供了一种处理衬底的方法。 该方法包括通过使用等离子体蚀刻工艺来蚀刻含硅衬底的表面，其中在等离子体蚀刻工艺期间使用包含氯气和惰性气体的至少一种蚀刻工艺气体，并且在等离子体蚀刻工艺的表面上形成外延层 含硅衬底。