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公开(公告)号：CN102074486A
公开(公告)日：2011-05-25
申请号：CN201010516275.2
申请日：2010-10-19
Applicant: 台湾积体电路制造股份有限公司
CPC classification number: H01L24/05 , H01L21/0206 , H01L21/02068 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/0381 , H01L2224/0401 , H01L2224/05027 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05568 , H01L2224/05573 , H01L2224/05655 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13083 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/81022 , H01L2224/94 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/00014 , H01L2224/11 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
Abstract: 本发明提供集成电路结构的形成方法，包含在晶片上形成含铜晶种层，以及在含铜晶种层暴露出来的表面上进行表面残留物去除步骤，表面残留物去除步骤使用含有氟与氧的工艺气体进行，然后在含铜晶种层暴露出来的表面上使用含氮气体进行还原吹净步骤，之后在含铜晶种层上电镀含铜层。本发明可以明显地改善形成凸块下金属层的工艺强健性。
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公开(公告)号：CN102386158B
公开(公告)日：2015-02-18
申请号：CN201110049451.0
申请日：2011-02-28
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/485 , H01L23/488 , H01L21/60 , H01L21/3205
CPC classification number: H01L24/11 , H01L21/02052 , H01L21/32125 , H01L21/76873 , H01L21/76885 , H01L23/488 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2221/1084 , H01L2224/03912 , H01L2224/0401 , H01L2224/05073 , H01L2224/05541 , H01L2224/05573 , H01L2224/1111 , H01L2224/1132 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/11474 , H01L2224/11614 , H01L2224/1181 , H01L2224/11849 , H01L2224/11903 , H01L2224/1191 , H01L2224/11912 , H01L2224/13005 , H01L2224/13017 , H01L2224/13018 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/81191 , H01L2924/00013 , H01L2924/01006 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01059 , H01L2924/01072 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/0541 , H01L2924/07025 , H01L2924/10329 , H01L2924/14 , H01L2924/20102 , H01L2924/3512 , H01L2924/381 , H01L2924/3841 , H01L2924/0105 , H01L2924/00014 , H01L2224/13099 , H01L2924/207
Abstract: 本发明提供一种半导体装置及其制法，特别是关于一种焊料柱状凸块。通过电镀导电材料于集成电路端点之上，以形成导电材料的柱状物，亦即柱状凸块连接点系形成于输出/输入端点之上。柱状凸块的底端部分具有比上段部分更宽的宽度。柱状凸块的底部部分的剖面图可形成梯形、矩形或倾斜形状。焊料材料可形成于柱状结构上表面上。因此，焊接柱状凸块的成品形成细微间距(fine pitch)封装焊料连接，此结构比现有技术更具可靠度(reliable)。
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公开(公告)号：CN102074486B
公开(公告)日：2014-06-18
申请号：CN201010516275.2
申请日：2010-10-19
Applicant: 台湾积体电路制造股份有限公司
CPC classification number: H01L24/05 , H01L21/0206 , H01L21/02068 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/0381 , H01L2224/0401 , H01L2224/05027 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05568 , H01L2224/05573 , H01L2224/05655 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13083 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/81022 , H01L2224/94 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/00014 , H01L2224/11 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
Abstract: 本发明提供集成电路结构的形成方法，包含在晶片上形成含铜晶种层，以及在含铜晶种层暴露出来的表面上进行表面残留物去除步骤，表面残留物去除步骤使用含有氟与氧的工艺气体进行，然后在含铜晶种层暴露出来的表面上使用含氮气体进行还原吹净步骤，之后在含铜晶种层上电镀含铜层。本发明可以明显地改善形成凸块下金属层的工艺强健性。
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公开(公告)号：CN102386158A
公开(公告)日：2012-03-21
申请号：CN201110049451.0
申请日：2011-02-28
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/485 , H01L23/488 , H01L21/60 , H01L21/3205
CPC classification number: H01L24/11 , H01L21/02052 , H01L21/32125 , H01L21/76873 , H01L21/76885 , H01L23/488 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2221/1084 , H01L2224/03912 , H01L2224/0401 , H01L2224/05073 , H01L2224/05541 , H01L2224/05573 , H01L2224/1111 , H01L2224/1132 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/11474 , H01L2224/11614 , H01L2224/1181 , H01L2224/11849 , H01L2224/11903 , H01L2224/1191 , H01L2224/11912 , H01L2224/13005 , H01L2224/13017 , H01L2224/13018 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/81191 , H01L2924/00013 , H01L2924/01006 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01059 , H01L2924/01072 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/0541 , H01L2924/07025 , H01L2924/10329 , H01L2924/14 , H01L2924/20102 , H01L2924/3512 , H01L2924/381 , H01L2924/3841 , H01L2924/0105 , H01L2924/00014 , H01L2224/13099 , H01L2924/207
Abstract: 本发明提供一种半导体装置及其制法，特别是关于一种焊料柱状凸块。通过电镀导电材料于集成电路端点之上，以形成导电材料的柱状物，亦即柱状凸块连接点系形成于输出/输入端点之上。柱状凸块的底端部分具有比上段部分更宽的宽度。柱状凸块的底部部分的剖面图可形成梯形、矩形或倾斜形状。焊料材料可形成于柱状结构上表面上。因此，焊接柱状凸块的成品形成细微间距(fine pitch)封装焊料连接，此结构比现有技术更具可靠度(reliable)。
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