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公开(公告)号:CN108807317A
公开(公告)日:2018-11-13
申请号:CN201710834344.6
申请日:2017-09-15
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/485 , H01L21/60
CPC分类号: H01L24/06 , G06F17/5072 , G06F17/5081 , H01L21/78 , H01L22/34 , H01L23/3114 , H01L23/522 , H01L23/5226 , H01L23/525 , H01L23/528 , H01L23/53214 , H01L23/53228 , H01L23/53233 , H01L23/53257 , H01L23/53261 , H01L23/5329 , H01L23/544 , H01L23/562 , H01L23/585 , H01L24/03 , H01L29/0649 , H01L2223/54426 , H01L2223/5446 , H01L2224/02311 , H01L2224/02371 , H01L2224/0239 , H01L2224/0345 , H01L2224/03452 , H01L2224/03464 , H01L2224/03614 , H01L2224/03827 , H01L2224/03848 , H01L2224/0401 , H01L2224/04042 , H01L2224/05111 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/061 , H01L2924/01013 , H01L2924/01029 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/3512 , H01L2924/35121 , H01L24/11 , H01L24/13 , H01L2224/11 , H01L2224/13026 , H01L2224/1308
摘要: 一种半导体装置的制造方法,包含形成第一接触衬垫及第二接触衬垫在第一钝化层上、沉积第一缓冲层在第一接触衬垫及第二接触衬垫上,以及沉积第二缓冲层在第一缓冲层及第二接触衬垫上。第一接触衬垫是在电路区域内,且第二接触衬垫是在非电路区域内。第二接触衬垫的边缘是被暴露,而第一接触衬垫的周围及第二接触衬垫的边缘是被第一缓冲层覆盖。
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公开(公告)号:CN108735698A
公开(公告)日:2018-11-02
申请号:CN201810261605.4
申请日:2018-03-27
申请人: 株式会社村田制作所
IPC分类号: H01L23/485 , H01L27/06 , H01L21/60
CPC分类号: H03F1/52 , H01L21/0217 , H01L21/02271 , H01L21/02546 , H01L21/0262 , H01L21/0274 , H01L21/2654 , H01L21/28575 , H01L21/30612 , H01L21/31116 , H01L21/31144 , H01L21/32134 , H01L21/76895 , H01L21/76898 , H01L23/291 , H01L23/3121 , H01L23/3171 , H01L23/481 , H01L23/5383 , H01L23/5386 , H01L24/03 , H01L24/05 , H01L24/48 , H01L24/85 , H01L25/16 , H01L27/0248 , H01L27/0605 , H01L27/0635 , H01L27/0652 , H01L29/045 , H01L29/0642 , H01L29/0657 , H01L29/0804 , H01L29/0821 , H01L29/1004 , H01L29/205 , H01L29/207 , H01L29/36 , H01L29/41708 , H01L29/42304 , H01L29/452 , H01L29/66204 , H01L29/66318 , H01L29/7371 , H01L29/861 , H01L2224/0221 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/04042 , H01L2224/05025 , H01L2224/05084 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/0518 , H01L2224/05573 , H01L2224/05644 , H01L2224/45144 , H01L2224/48106 , H01L2224/48227 , H01L2224/48463 , H01L2224/85203 , H01L2224/85205 , H01L2924/10329 , H01L2924/10337 , H01L2924/13051 , H01L2924/13063 , H01L2924/13064 , H01L2924/19041 , H01L2924/19043 , H03F3/195 , H03F3/213 , H03F2200/222 , H03F2200/387 , H03F2200/426 , H03F2200/444
摘要: 本发明提供一种在使用了包含化合物半导体的基板的半导体装置中,能够抑制芯片面积的增大的半导体装置。在包含化合物半导体的基板上形成电路元件。在电路元件上,接合焊盘被配置为与电路元件至少局部重叠。接合焊盘包含第1金属膜以及形成于第1金属膜上的第2金属膜。第2金属膜的金属材料比第1金属膜的金属材料硬。
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公开(公告)号:CN105359261B
公开(公告)日:2018-06-15
申请号:CN201480037406.5
申请日:2014-07-03
申请人: 德克萨斯仪器股份有限公司
CPC分类号: H01L24/05 , H01L23/3192 , H01L23/49524 , H01L23/49562 , H01L23/522 , H01L24/03 , H01L24/73 , H01L29/7802 , H01L2224/0345 , H01L2224/0346 , H01L2224/03614 , H01L2224/0362 , H01L2224/04042 , H01L2224/05026 , H01L2224/05155 , H01L2224/05564 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/32245 , H01L2224/40247 , H01L2224/48247 , H01L2224/73265 , H01L2224/94 , H01L2924/10253 , H01L2924/1033 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2224/03 , H01L2924/00012 , H01L2924/00 , H01L2924/00014 , H01L2224/05139 , H01L2224/05144
摘要: 在所描述的示例中,形成包括底部介电层(211)和顶部介电层(212)的介电堆叠,其具有在键合焊盘(215)上方的接触孔(239)。接触孔(239)内的底部介电层(211)的外边缘延伸超过顶部介电层(212)的外边缘,以限定具有键合焊盘边缘的暴露的键合焊盘区域。第一金属层(226)被沉积。第二金属层(227)被沉积在第一金属层(226)上。第二金属层(227)被湿法刻蚀以使其从接触孔(239)中的底部介电层(211)的侧壁凹进。第一金属层(226)被湿法刻蚀以使其从顶部介电层(212)凹进。第一金属层(226)在键合焊盘边缘上方延伸到底部介电层(211)上。
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公开(公告)号:CN103646848B
公开(公告)日:2018-06-05
申请号:CN201310435963.X
申请日:2005-06-02
申请人: 伊利诺伊大学评议会
IPC分类号: H01L21/02 , H01L31/18 , H01L27/12 , H01L29/786 , H01L31/0392 , H01L29/06
CPC分类号: H01L29/76 , B81C2201/0185 , B82Y10/00 , H01L21/02521 , H01L21/02603 , H01L21/02628 , H01L21/308 , H01L21/322 , H01L21/6835 , H01L23/02 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/29 , H01L24/32 , H01L24/80 , H01L24/83 , H01L24/94 , H01L24/97 , H01L25/0753 , H01L27/1285 , H01L27/1292 , H01L29/04 , H01L29/06 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/78603 , H01L29/78681 , H01L29/78696 , H01L31/0392 , H01L31/03926 , H01L31/1804 , H01L31/1864 , H01L31/1896 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L2221/68368 , H01L2221/68381 , H01L2224/03 , H01L2224/0332 , H01L2224/0345 , H01L2224/03614 , H01L2224/0362 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05144 , H01L2224/05155 , H01L2224/05166 , H01L2224/05552 , H01L2224/05553 , H01L2224/05554 , H01L2224/05555 , H01L2224/05644 , H01L2224/05666 , H01L2224/08225 , H01L2224/2919 , H01L2224/32225 , H01L2224/80 , H01L2224/80006 , H01L2224/80121 , H01L2224/80862 , H01L2224/80895 , H01L2224/83 , H01L2224/83005 , H01L2224/83121 , H01L2224/83192 , H01L2224/83193 , H01L2224/8385 , H01L2224/83862 , H01L2224/9202 , H01L2224/94 , H01L2224/95 , H01L2224/97 , H01L2924/00012 , H01L2924/01032 , H01L2924/0665 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13063 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15159 , H01L2924/15162 , H01L2924/15788 , H01L2924/1579 , Y02E10/547 , Y02P70/521 , Y10S977/707 , Y10S977/724 , H01L2924/00014 , H01L2924/00
摘要: 本发明提供用于制造可印刷半导体元件并将可印刷半导体元件组装至基片表面上的方法。本发明的方法和设备组件能在含有聚合物材料的基片上产生多种柔性电子和光电子器件以及器件阵列。本发明还提供能在拉伸状态下具有良好性能的可拉伸半导体元件及可拉伸电子器件。
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公开(公告)号:CN103855124B
公开(公告)日:2018-01-02
申请号:CN201310597577.0
申请日:2013-11-22
申请人: 爱思开海力士有限公司
IPC分类号: H01L23/498 , H01L21/48
CPC分类号: H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/02379 , H01L2224/03003 , H01L2224/0311 , H01L2224/03312 , H01L2224/0332 , H01L2224/03334 , H01L2224/03462 , H01L2224/0348 , H01L2224/03505 , H01L2224/03845 , H01L2224/0401 , H01L2224/04042 , H01L2224/05008 , H01L2224/05022 , H01L2224/05023 , H01L2224/05026 , H01L2224/05073 , H01L2224/05144 , H01L2224/05155 , H01L2224/05169 , H01L2224/05568 , H01L2224/05569 , H01L2224/0579 , H01L2224/05839 , H01L2224/05847 , H01L2224/11464 , H01L2224/13023 , H01L2224/13082 , H01L2224/131 , H01L2224/13144 , H01L2224/13155 , H01L2224/13169 , H01L2224/16225 , H01L2224/16227 , H01L2224/48227 , H01L2924/00014 , H01L2924/00012 , H01L2924/014 , H01L2224/05552
摘要: 本发明公开了一种半导体装置及其制造方法。该半导体装置包括:半导体结构,在其一个表面上形成有用于暴露焊盘的开口;第一导电层,形成在开口中以使半导体结构的一个表面更加均匀;以及导电图案,形成在半导体结构的部分的一个表面上,该一个表面包括第一导电层。
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公开(公告)号:CN104157623B
公开(公告)日:2017-11-28
申请号:CN201410198698.2
申请日:2014-05-12
申请人: 英飞凌科技股份有限公司
IPC分类号: H01L23/482 , H01L23/49 , H01L21/60
CPC分类号: H01L23/49811 , H01L21/76885 , H01L23/147 , H01L23/15 , H01L23/49827 , H01L24/13 , H01L24/14 , H01L24/17 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/0401 , H01L2224/05023 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05184 , H01L2224/05564 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/1134 , H01L2224/11903 , H01L2224/13005 , H01L2224/13017 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13118 , H01L2224/1312 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/1411 , H01L2224/17107 , H01L2224/81193 , H01L2924/0002 , H01L2924/381 , H01L2924/00 , H01L2924/00014 , H01L2924/206 , H01L2924/207 , H01L2924/01047
摘要: 本发明公开了一种芯片装置以及用于形成芯片装置的方法,该芯片装置可以包括:包括多个电网的芯片,其中每个电网包括至少一个键合焊盘;以及形成在多个电网中的大多数电网的至少一个键合焊盘上的多个柱,其中多个柱可以被配置为将多个电网中的大多数电网的至少一个键合焊盘连接至芯片外部的连接区域。
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公开(公告)号:CN106887422A
公开(公告)日:2017-06-23
申请号:CN201610688826.0
申请日:2016-08-19
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/498 , H01L21/48
CPC分类号: H01L23/562 , H01L21/02068 , H01L21/02118 , H01L21/02175 , H01L21/02244 , H01L21/02252 , H01L21/02255 , H01L21/32051 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/4864 , H01L21/56 , H01L21/561 , H01L21/565 , H01L21/568 , H01L21/76832 , H01L21/76834 , H01L21/76888 , H01L21/76898 , H01L23/3107 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/525 , H01L23/528 , H01L23/53228 , H01L23/53295 , H01L23/5383 , H01L23/5384 , H01L23/5386 , H01L23/5389 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/32 , H01L24/73 , H01L24/92 , H01L25/105 , H01L25/50 , H01L33/62 , H01L2224/0231 , H01L2224/0233 , H01L2224/0401 , H01L2224/04105 , H01L2224/05005 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05184 , H01L2224/05558 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05684 , H01L2224/1183 , H01L2224/12105 , H01L2224/13024 , H01L2224/13025 , H01L2224/13101 , H01L2224/13111 , H01L2224/16227 , H01L2224/19 , H01L2224/32225 , H01L2224/48227 , H01L2224/48247 , H01L2224/73204 , H01L2224/73265 , H01L2224/73267 , H01L2224/83005 , H01L2224/92125 , H01L2224/92244 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/01029 , H01L2924/0541 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/014 , H01L2924/00014 , H01L23/49894 , H01L21/4803 , H01L23/49811 , H01L23/49838
摘要: 本发明的实施例提供了封装件结构及其形成方法。封装件结构包括衬底和在衬底上方形成的半导体管芯。封装件结构还包括覆盖半导体管芯的封装件层和在封装件层中形成的导电结构。封装件结构包括在导电结构上形成的第一绝缘层,并且第一绝缘层包括一价金属氧化物。在第一绝缘层和封装件层之间形成第二绝缘层。第二绝缘层包括一价金属氧化物,并且第二绝缘层中的一价金属氧化物的重量比大于第一绝缘层中的一价金属氧化物的重量比。
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公开(公告)号:CN106558506A
公开(公告)日:2017-04-05
申请号:CN201610649174.X
申请日:2016-08-10
申请人: 瑞萨电子株式会社
发明人: 矢岛明
IPC分类号: H01L21/60 , H01L23/488 , H01L23/31
CPC分类号: H01L24/14 , H01L23/3192 , H01L23/525 , H01L23/53214 , H01L23/53228 , H01L23/5329 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/02331 , H01L2224/02377 , H01L2224/0239 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03614 , H01L2224/03914 , H01L2224/0401 , H01L2224/05024 , H01L2224/05073 , H01L2224/0508 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05187 , H01L2224/05664 , H01L2224/10126 , H01L2224/10145 , H01L2224/11334 , H01L2224/11849 , H01L2224/119 , H01L2224/11901 , H01L2224/13017 , H01L2224/13024 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/14051 , H01L2224/14131 , H01L2224/14133 , H01L2224/14135 , H01L2224/14177 , H01L2224/14179 , H01L2224/14517 , H01L2224/16058 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/16238 , H01L2224/17051 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81139 , H01L2224/81191 , H01L2224/81192 , H01L2224/81193 , H01L2224/814 , H01L2224/81411 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/0132 , H01L2924/0133 , H01L2924/07025 , H01L2924/15311 , H01L2924/351 , H01L2924/381 , H01L2924/00012 , H01L2924/014 , H01L2924/0665 , H01L2924/01022 , H01L2924/04941 , H01L2924/01029 , H01L2924/01028 , H01L2924/01074 , H01L2924/01024 , H01L2924/01073 , H01L2924/0496 , H01L2924/01046 , H01L2924/01044 , H01L2924/01078 , H01L2924/01047 , H01L2924/00014 , H01L2924/00 , H01L24/10 , H01L23/31 , H01L23/488 , H01L2224/1701 , H01L2224/1703 , H01L2224/171 , H01L2224/1712
摘要: 本发明提供一种半导体器件,提高半导体器件的可靠性。在半导体器件中,连接半导体芯片(CHP)和布线基板(WB)的凸块电极(BE2)包括将其周围用绝缘膜(17)包围的第1部分和从绝缘膜(17)露出的第2部分。能够在增加凸块电极(BE2)的高度的同时,减小凸块电极(BE2)的宽度,所以能够增加与相邻的凸块电极(BE2)的距离,密封材料(UF)的填充性提高。
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公开(公告)号:CN106549009A
公开(公告)日:2017-03-29
申请号:CN201610824950.5
申请日:2016-09-14
申请人: 半导体元件工业有限责任公司
CPC分类号: H01L23/49827 , H01L21/02035 , H01L21/288 , H01L21/304 , H01L21/3065 , H01L21/308 , H01L21/3083 , H01L21/4825 , H01L21/4853 , H01L21/486 , H01L21/565 , H01L21/67069 , H01L21/6835 , H01L21/76877 , H01L21/76898 , H01L21/78 , H01L22/12 , H01L22/26 , H01L23/15 , H01L23/3107 , H01L23/3114 , H01L23/481 , H01L23/4822 , H01L23/49503 , H01L23/4951 , H01L23/49541 , H01L23/49562 , H01L23/49575 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L23/49866 , H01L23/544 , H01L23/562 , H01L24/05 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L27/0207 , H01L27/088 , H01L27/14 , H01L27/14625 , H01L27/14683 , H01L27/14685 , H01L29/0847 , H01L2221/68327 , H01L2223/54426 , H01L2223/5446 , H01L2224/0401 , H01L2224/04042 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/05172 , H01L2224/05184 , H01L2224/13025 , H01L2224/13111 , H01L2224/13116 , H01L2224/48091 , H01L2225/06555 , H01L2225/06593 , H01L2225/06596 , H01L2924/13055 , H01L2924/13091 , H02M3/158 , H01L25/074
摘要: 本公开涉及层叠式半导体器件结构及其制作方法。本发明提供了一种层叠式半导体器件结构,所述层叠式半导体器件结构包括第一半导体器件和第二半导体器件。所述第一半导体器件包括由相对的侧壁部分界定的凹面部分,所述侧壁部分向外延伸来限定凹陷区域。导电层至少沿着所述凹面部分设置。所述第二半导体器件设置在所述凹陷部分内,并电连接到所述导电层。在一个实施方案中,所述层叠式半导体器件连接到导电引线框,并且至少部分地被封装主体包封。
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公开(公告)号:CN106549004A
公开(公告)日:2017-03-29
申请号:CN201610600014.6
申请日:2016-07-27
申请人: 台湾积体电路制造股份有限公司
发明人: 陈宪伟
IPC分类号: H01L23/544 , H01L21/02
CPC分类号: H01L23/544 , H01L21/4853 , H01L21/56 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L21/78 , H01L23/3128 , H01L23/3171 , H01L23/49811 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/81 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L2221/68359 , H01L2221/68372 , H01L2221/68381 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5448 , H01L2224/02371 , H01L2224/02373 , H01L2224/03826 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05184 , H01L2224/05572 , H01L2224/05647 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/12105 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16227 , H01L2224/19 , H01L2224/20 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/73267 , H01L2224/81005 , H01L2224/8113 , H01L2224/81132 , H01L2224/92244 , H01L2224/94 , H01L2224/97 , H01L2225/0651 , H01L2225/06568 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/14 , H01L2924/15311 , H01L2924/19011 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/00014 , H01L2924/00012 , H01L2224/83 , H01L2224/81 , H01L2224/03 , H01L2224/11 , H01L2924/01082 , H01L2924/01046 , H01L2924/01079 , H01L2924/014 , H01L2924/00 , H01L2224/83005 , H01L21/02
摘要: 本发明提供了具有对准标记的集成电路管芯及其形成方法。方法包括在衬底上形成器件。在衬底和器件上方形成多个接触焊盘。与形成多个接触焊盘同时,在衬底和器件上方形成一个或多个对准标记。
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