摘要:
Integrated circuit (IC) devices with diodes formed in a subfin between a support structure of an IC device and one or more nanoribbon stacks are disclosed. To alleviate challenges of limited semiconductor cross-section provided by the subfin, etch depths in the subfin (i.e., depths of recesses in the subfin formed as a part of forming the diodes) are selectively optimized and varied. Deeper recesses are made in subfin portions at which diode terminals (e.g., anodes and cathodes) are formed, to increase the semiconductor cross-section in those portions, thus providing improved subfin contacts. Shallower recesses (or no recesses) are made in subfin portion between the diode terminals, to increase subfin retention. Thus, subfin diodes may be provided in a manner that enables improved diode conductance and/or improved current carrying capabilities while advantageously using substantially the same etch processes as those used for forming nanoribbon-based transistors elsewhere in the IC device.
摘要:
Photonic components are placed on the processor package to bring the optical signal close to the processor die. The processor package includes a substrate to which the processor die is coupled, and which allows the processor die to connect to a printed circuit board. The processor package also includes transceiver logic, electrical-optical conversion circuits, and an optical coupler. The electrical-optical conversion circuits can include laser(s), modulator(s), and photodetector(s) to transmit and receive and optical signal. The coupler interfaces to a fiber that extends off the processor package. Multiple fibers can be brought to the processor package allowing for a scalable high-speed, high-bandwidth interconnection to the processor.
摘要:
Embodiments of the present disclosure describe dielectric layers and methods for their fabrication and use. In some embodiments, a dielectric layer may include a dielectric material and a plurality of elongate pores. The dielectric material may have a first surface and an opposing second surface spaced away from the first surface in a direction defined by an axis, and may have a Young's modulus (E0) in the direction defined by the axis. Individual elongate pores of the plurality of elongate pores may extend from the second surface with a longitudinal axis substantially parallel to the axis. The plurality of elongate pores may provide the dielectric layer with a porosity, p, greater than approximately 30%, and the dielectric layer may have a Young's modulus approximately equal to E0*(1−p) in the direction defined by the axis. Other embodiments may be described and/or claimed.
摘要:
Embodiments of the invention describe a multi-segment optical waveguide that enables an optical modulator to be low-power and athermal by decreasing the device length needed for a given waveguide length. Embodiments of the invention describe an optical waveguide that is folded onto itself, and thus includes at least two sections. Thus, embodiments of the invention may decrease the device size of a modulator by at least around a factor of two if the device is folded twofold (device size may be further reduced if the modulator is folded threefold, four-fold, five-fold, etc.).Embodiments of the invention further enable the electrode length required to create the desired electro-optic effect for the multi-segment optical waveguide to be reduced. In embodiments of the invention, certain electrodes may be “shared” amongst the different segments of the waveguide, thereby reducing the power requirement and capacitance of a device having a waveguide of a given length.
摘要:
EOP-based photonic devices employing coplanar electrodes and in-plane poled chromophores and methods of their manufacture. In an individual EOP-based photonic device, enhanced performance is achieved through in-plane poled chromophores having opposing polarities, enabling, for example, a push-pull optical modulator with reduced operational voltage and switching power relative to a conventional MZ modulator. For a plurality of EOP-based photonic devices, enhanced manufacturability is achieved through a sacrificial interconnect enabling concurrent in-plane poling of many EOP regions disposed on a substrate.
摘要:
A closed-loop based timing signal distribution architecture includes at least one signal source coupled to a signal path disposed in a closed loop arrangement to facilitate generation of a standing wave signal within the signal path. In one embodiment, at least one receiver is coupled to the signal path to generate at least one digital clock signal based upon the standing wave signal.
摘要:
Gate-all-around integrated circuit structures having confined epitaxial source or drain structures, are described. For example, an integrated circuit structure includes a plurality of nanowires above a sub-fin. A gate stack is over the plurality of nanowires and the sub-fin. Epitaxial source or drain structures are on opposite ends of the plurality of nanowires. The epitaxial source or drain structures comprise i) a first PMOS epitaxial (pEPI) region of germanium and boron, ii) a second pEPI region of silicon, germanium and boron on the first pEPI region at a contact location, iii) titanium silicide conductive contact material on the second pEPI region.
摘要:
Methods and structures formed thereby are described, of forming self-aligned contact structures for microelectronic devices. An embodiment includes forming a trench in a source/drain region of a transistor device disposed in a device layer, wherein the device layer is on a substrate, forming a fill material in the trench, forming a source/drain material on the fill material, forming a first source/drain contact on a first side of the source/drain material, and then forming a second source drain contact on a second side of the source/drain material.
摘要:
Techniques and structure are disclosed for enhancing fracture resistance of back-end interconnects and other such interconnect structures by increasing via density. Increased via density can be provided, for example, within the filler/dummified portion(s) of adjacent circuit layers within a die. In some cases, an electrically isolated (floating) filler line of an upper circuit layer may include a via which lands on a floating filler line of a lower circuit layer in a region corresponding to where the filler lines cross/intersect. In some such cases, the floating filler line of the upper circuit layer may be formed as a dual-damascene structure including such a via. In some embodiments, a via similarly may be provided between a floating filler line of the upper circuit layer and a sufficiently electrically isolated interconnect line of the lower circuit layer. The techniques/structure can be used to provide mechanical integrity for the die.
摘要:
Embodiments of the present disclosure provide optical connection techniques and configurations. In one embodiment, an apparatus includes a substrate, a laser device formed on the substrate, the laser device including an active layer configured to emit light, and a mode-expander waveguide disposed on the substrate and butt-coupled with the active layer to receive and route the light to a waveguide formed on another substrate. Other embodiments may be described and/or claimed.