公开(公告)号：US10326067B2

公开(公告)日：2019-06-18

申请号：US14852125

申请日：2015-09-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Tapash Chakraborty ,  Robert Jan Visser

IPC: C07F19/00 ,  H01L35/24 ,  C07F11/00 ,  H01L35/34

Abstract: Single source precursors, methods to synthesize single source precursors and methods to deposit nanowire based thin films using single source precursors for high efficiency thermoelectric devices are provided herein. In some embodiments, a method of forming a single source precursor includes mixing a first compound with one of SbX3, SbX5, Sb2(SO4)3 or with one of BiX3, Bi(NO3)3, Bi(OTf)3, Bi(PO4), Bi(OAc)3, wherein the first compound is one of a lithium selenolate, a lithium tellurolate, a monoselenide, or a monotelluride.

公开(公告)号：US20180298492A1

公开(公告)日：2018-10-18

申请号：US15978930

申请日：2018-05-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Darshan Thakare ,  Abhijit Basu Mallick ,  Pramit Manna ,  Robert Jan Visser ,  Prerna Sonthalia Goradia ,  Nilesh Chimanrao Bagul

IPC: C23C16/448 ,  C23C16/40 ,  C23C16/34 ,  H01L21/02

CPC classification number: C23C16/4486 ,  B05D1/02 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02153 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02271

Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.

公开(公告)号：US20160339517A1

公开(公告)日：2016-11-24

申请号：US14811228

申请日：2015-07-28

Applicant: Applied Materials, Inc.

Inventor： Ajey M. Joshi ,  Ashavani Kumar ,  Kasiraman Krishnan ,  Nag B. Patibandla ,  Ranga Rao Arnepalli ,  Prerna Goradia

IPC: B22F1/00 ,  B22F3/105 ,  B22F1/02

CPC classification number: B22F1/0007 ,  B22F1/0011 ,  B22F1/025 ,  B22F3/1055 ,  B22F2999/00 ,  B33Y10/00 ,  B33Y70/00 ,  Y02P10/295 ,  B22F9/24 ,  C23C16/00 ,  C25D1/00

Abstract: A precursor for additive manufacturing includes a powder of metallic particulates, each particulate having a metal core having mean diameters between 10 and 150 μm, the metal core having a first melting temperature; and each of the metal core having a functionalized surface, the functionalized surface includes a metallic material having a second melting point lower than the first melting point.

Abstract translation: 用于添加剂制造的前体包括金属颗粒粉末，每个颗粒具有平均直径在10至150μm之间的金属芯，所述金属芯具有第一熔融温度; 并且每个所述金属芯具有官能化表面，所述官能化表面包括具有低于所述第一熔点的第二熔点的金属材料。

公开(公告)号：US10163629B2

公开(公告)日：2018-12-25

申请号：US15045081

申请日：2016-02-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Nilesh Chimanrao Bagul ,  Prerna Sonthalia Goradia ,  Robert Jan Visser

IPC: H01L21/02 ,  C23C16/448 ,  H01L21/3065 ,  C23C16/04 ,  C23C16/455 ,  H01L21/306 ,  H01L21/32 ,  H01L21/465

Abstract: Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.

公开(公告)号：US20180350604A1

公开(公告)日：2018-12-06

申请号：US15992656

申请日：2018-05-30

Applicant: Applied Materials, Inc.

Inventor： Robert Jan Visser ,  Prerna Goradia ,  Tapash Chakraborty ,  Ranga Rao Arnepalli ,  Darshan Thakare ,  Geetika Bajaj

IPC: H01L21/288 ,  C23C16/448 ,  C23C16/06 ,  C23F1/00

Abstract: Embodiments of the disclosure relate to methods of selectively depositing or etching conductive materials from a substrate comprising conductive materials and nonconductive materials. More particularly, embodiments of the disclosure are directed to methods of using electrical bias and aerosol assisted chemical vapor deposition to deposit metal on conductive metal pillars. Additional embodiments of the disclosure relate to methods of using electrical bias and aerosol assisted chemical vapor deposition to etch metal from conductive metal pillars.

公开(公告)号：US20180347039A1

公开(公告)日：2018-12-06

申请号：US15976050

申请日：2018-05-10

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Robert Jan Visser ,  Geetika Bajaj ,  Prerna Goradia

IPC: C23C16/448 ,  C23C16/34

Abstract: Embodiments of the disclosure relate to methods of depositing industrial coating on a substrate or process parts. More particularly, embodiments of the disclosure are directed to methods of depositing metals, metal oxides, metal nitrides and/or metal fluorides on surfaces comprised of metals, ceramics, or organic materials. In some embodiments, a metal-containing precursor can be aerosolized with an organic solvent and exposed to a substrate processing chamber where the organic solvent can be evaporated to adsorb the metal-containing precursor. The adsorbed precursor can be decomposed or reacted to form the metal-containing film.

公开(公告)号：US20180308822A1

公开(公告)日：2018-10-25

申请号：US15634012

申请日：2017-06-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi Lianto ,  Guan Huei See ,  Arvind Sundarrajan ,  Ranga Rao Arnepalli ,  Prerna Goradia

IPC: H01L23/00 ,  H01L21/56 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/48

Abstract: A fan-out process using chemical mechanical planarization (CMP) reduces the step-height between a semiconductor die and the surrounding overmolding of a reconstituted wafer. The reconstituted wafer is formed by overmolding a back side of at least one die that is placed with an active side facing down. The reconstituted wafer is then oriented to expose the die and the active side. A polymer layer is then formed over the reconstituted wafer. A CMP process then removes a portion of the polymer layer until a certain thickness above the die surface is obtained, reducing the step-height between the polymer layer on top of the die surface and the polymer layer on the adjacent mold compound surface. The CMP process can also be performed after a subsequent redistribution layer is formed on the reconstituted wafer.

公开(公告)号：US20180236633A1

公开(公告)日：2018-08-23

申请号：US15477943

申请日：2017-04-03

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Sudhanshu Singh ,  Darshan Thakare ,  Prerna Goradia ,  Robert Jan Visser

IPC: B24B37/22 ,  B24B57/02 ,  C09G1/02 ,  C09K3/14

CPC classification number: B24B37/22 ,  B24B37/044 ,  B24B57/02 ,  C09G1/02 ,  C09K3/1463

Abstract: A method of polishing includes bringing a metal layer of a substrate into contact with a polishing pad, generating relative motion between the substrate and the polishing pad, and while the metal layer is in contact with the polishing pad and the substrate is moving relative to the polishing pad, alternating between supplying a first polishing liquid and a second polishing liquid to an interface between the metal layer. The first polishing liquid is abrasive-free and includes an oxidizer, and the second polishing liquid includes abrasive particles and a complexing compound to complex with ions of the metal of the metal layer.

公开(公告)号：US11471999B2

公开(公告)日：2022-10-18

申请号：US16042016

申请日：2018-07-23

Applicant: Applied Materials, Inc.

Inventor： Ashavani Kumar ,  Ashwin Chockalingam ,  Sivapackia Ganapathiappan ,  Rajeev Bajaj ,  Boyi Fu ,  Daniel Redfield ,  Nag B. Patibandla ,  Mario Dagio Cornejo ,  Amritanshu Sinha ,  Yan Zhao ,  Ranga Rao Arnepalli ,  Fred C. Redeker

IPC: B24B37/24 ,  B24D11/04 ,  B24B37/26 ,  B24D18/00 ,  B24B37/16 ,  B24B37/20 ,  B33Y80/00 ,  B33Y10/00 ,  B29C64/112 ,  B33Y30/00 ,  H01L21/306

Abstract: Embodiments described herein relate to integrated abrasive (IA) polishing pads, and methods of manufacturing IA polishing pads using, at least in part, surface functionalized abrasive particles in an additive manufacturing process, such as a 3D inkjet printing process. In one embodiment, a method of forming a polishing article includes dispensing a first plurality of droplets of a first precursor, curing the first plurality of droplets to form a first layer comprising a portion of a sub-polishing element, dispensing a second plurality of droplets of the first precursor and a second precursor onto the first layer, and curing the second plurality of droplets to form a second layer comprising portions of the sub-polishing element and portions of a plurality of polishing elements. Here, the second precursor includes functionalized abrasive particles having a polymerizable group chemically bonded to surfaces thereof.

公开(公告)号：US20180363133A1

公开(公告)日：2018-12-20

申请号：US15625797

申请日：2017-06-16

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Robert Jan Visser ,  Pramit Manna ,  Abhijit Basu Mallick ,  Prerna Goradia

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  H01L21/768 ,  H01L21/762

Abstract: Methods for filling a substrate feature with a seamless silicon nitride gapfill through a radical based hot wire chemical vapor deposition process are described. Also described is an apparatus for performing the radical based hot wire chemical vapor deposition of the silicon nitride gapfill.