Abstract:
A method of design or verification for a self-assemblable block copolymer feature, the block copolymer feature including a first domain having a first polymer type and a second domain having a second polymer type, the method including, based on the length of the second polymer type or on an uncertainty in position of the first domain within the block copolymer feature calculated based on the length of the second polymer type, adjusting a parameter of the self-assembly process of a block copolymer feature or verifying a placement of a block copolymer feature.
Abstract:
Causing a self-assemblable block copolymer (BCP) having first and second blocks to migrate from a region surrounding a lithography recess of the substrate and a dummy recess on the substrate to within the lithography recess and the dummy recess, causing the BCP to self-assemble into an ordered layer within the lithography recess, the layer having a first block domain and a second block domain, and selectively removing the first domain to form a lithography feature having the second domain within the lithography recess, wherein a width of the dummy recess is smaller than the minimum width required by the BCP to self-assemble, the dummy recess is within the region of the substrate surrounding the lithography recess from which the BCP is caused to migrate, and the width between portions of a side-wall of the lithography recess is greater than the width between portions of a side-wall of the dummy recess.
Abstract:
A method for calibrating a resist model. The method includes: generating a modeled resist contour of a resist structure based on a simulated aerial image of the resist structure and parameters of the resist model, and predicting a metrology contour of the resist structure from the modeled resist contour based on information of an actual resist structure obtained by a metrology device. The method includes adjusting one or more of the parameters of the resist model based on a comparison of the predicted metrology contour and an actual metrology contour of the actual resist structure obtained by the metrology device.
Abstract:
A method of determining a position of an imprint template in an imprint lithography apparatus is disclosed. In an embodiment, the method includes illuminating an area of the imprint template in which an alignment mark is expected to be found by scanning an alignment radiation beam over that area, detecting an intensity of radiation reflected or transmitted from the area, and identifying the alignment mark via analysis of the detected intensity.
Abstract:
A method of forming a plurality of regularly spaced lithography features, e.g. contact holes, including: providing a trench on a substrate, the trench having opposing side-walls and a base, with the side-walls having a width therebetween, wherein the trench is formed by photolithography including exposing the substrate using off-axis illumination whereby a modulation is provided to the side-walls of the trench; providing a self-assemblable block copolymer having first and second blocks in the trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in the trench, the layer having first domains of the first block and second domains of the second block; and selectively removing the first domain to form at least one regularly spaced row of lithography features having the second domain along the trench.
Abstract:
An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.
Abstract:
A method of forming at least one lithography feature, the method including: providing at least one lithography recess on a substrate, the or each lithography recess having at least one side-wall and a base, with the at least one side-wall having a width between portions thereof; providing a self-assemblable block copolymer having first and second blocks in the or each lithography recess; causing the self-assemblable block copolymer to self-assemble into an ordered layer within the or each lithography recess, the ordered layer including at least a first domain of first blocks and a second domain of second blocks; causing the self-assemblable block copolymer to cross-link in a directional manner; and selectively removing the first domain to form lithography features of the second domain within the or each lithography recess.
Abstract:
A method of determining a characteristic of a guiding template for guiding self-assembly of block copolymer to form an entirety of a design layout, or a portion thereof, including a plurality of design features, each design feature including one or more elemental features, the method including selecting a characteristic of a guiding template for each of the one or more elemental features of the plurality of design features from a database or a computer readable non-transitory medium, the database or the computer readable non-transitory medium storing a characteristic of a guiding template for each of the one or more elemental features, and determining the characteristic of the guiding template to form the entirety of the design layout, or the portion thereof, by combining the selected characteristic of the guiding template for the one or more elemental features for each of the plurality of design features.
Abstract:
In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.
Abstract:
A substrate arrangement for use in a lithographic apparatus, the substrate arrangement including: a resist; a photosensitive resist under-layer; and a substrate, wherein an exposure threshold of the resist under-layer is lower than an exposure threshold of the resist. The resist and the resist under-layer may be both photosensitive to EUV radiation.