公开(公告)号：US20140051262A9

公开(公告)日：2014-02-20

申请号：US13472282

申请日：2012-05-15

申请人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

发明人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

IPC分类号： H01L21/318

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228

摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

摘要翻译： 描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。 根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。 该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

公开(公告)号：US08647993B2

公开(公告)日：2014-02-11

申请号：US13472282

申请日：2012-05-15

申请人： Adrien LaVoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

发明人： Adrien LaVoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228

摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

摘要翻译： 描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。 根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。 该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

公开(公告)号：US20130196516A1

公开(公告)日：2013-08-01

申请号：US13472282

申请日：2012-05-15

申请人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

发明人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

IPC分类号： H01L21/318

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228

摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

摘要翻译： 描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。 根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。 该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

公开(公告)号：US08592328B2

公开(公告)日：2013-11-26

申请号：US13414619

申请日：2012-03-07

申请人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

发明人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

IPC分类号： H01L21/471 ,  H05H1/24

CPC分类号： C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/7843

摘要： Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

公开(公告)号：US20130189854A1

公开(公告)日：2013-07-25

申请号：US13414619

申请日：2012-03-07

申请人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

发明人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

IPC分类号： H01L21/318

CPC分类号： C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/7843

摘要： Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

公开(公告)号：US08563414B1

公开(公告)日：2013-10-22

申请号：US12766721

申请日：2010-04-23

申请人： Keith Fox ,  Dennis Hausmann

发明人： Keith Fox ,  Dennis Hausmann

IPC分类号： C23C8/54 ,  C23C14/28

CPC分类号： C23C16/26 ,  C23C16/505

摘要： Conductive carbon films having a resistivity of less than about 0.2 Ohm-cm, preferably less than about 0.05 Ohm-cm, are deposited by PECVD. Conductive carbon films are essentially free of sp3-hybridized carbon and contain predominantly sp2 carbon, based on IR spectral features. Carbon content of the films is at least about 75% atomic C. Conductive carbon films may contain hydrogen, but are typically hydrogen-poor, containing less than about 20% H. In some embodiments, conductive carbon films further contain nitrogen (N). For example, conductive films having a CxHyNz composition, where nitrogen is present at between about 5-10% atomic, have both high conductivity and low roughness, because introduction of nitrogen delays formation of crystallites in the film. The films are deposited at a process temperature of at least about 620° C., and at a pressure of less than about 20 Torr in a dual-frequency plasma process dominated by low frequency (LF) plasma.

摘要翻译： 通过PECVD沉积电阻率小于约0.2欧姆 - 厘米，优选小于约0.05欧姆 - 厘米的导电碳膜。 基于IR光谱特征，导电碳膜基本上不含sp3杂化碳并主要含有sp2碳。 膜的碳含量为至少约75％原子C.导电碳膜可能含有氢，但通常为氢贫，含量小于约20％H.在一些实施方案中，导电碳膜还含有氮（N）。 例如，由于氮的引入会延缓薄膜中的微晶形成，所以具有C 5 H 10 Nz组成的导电膜，其中氮存在于约5-10％原子之间，具有高导电性和低粗糙度。 在由低频（LF）等离子体主导的双频等离子体工艺中，膜的至少约620℃的处理温度和小于约20托的压力下沉积。

公开(公告)号：US07507848B2

公开(公告)日：2009-03-24

申请号：US11199032

申请日：2005-08-08

申请人： Roy G. Gordon ,  Jill S. Becker ,  Dennis Hausmann ,  Seigi Suh

发明人： Roy G. Gordon ,  Jill S. Becker ,  Dennis Hausmann ,  Seigi Suh

IPC分类号： C07F7/00 ,  C07F11/00 ,  C23C16/00

CPC分类号： H01L21/02148 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/126 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C07F9/091 ,  C07F9/11 ,  C23C16/30 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02159 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/31612 ,  H01L28/40 ,  H01L29/0684 ,  H01L29/42364 ,  H01L29/517

摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

摘要翻译： 金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。 例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热到300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。 类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基板上。以交替脉冲提供蒸气产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

公开(公告)号：US20050277780A1

公开(公告)日：2005-12-15

申请号：US11199032

申请日：2005-08-08

申请人： Roy Gordon ,  Jill Becker ,  Dennis Hausmann ,  Seigi Suh

发明人： Roy Gordon ,  Jill Becker ,  Dennis Hausmann ,  Seigi Suh

IPC分类号： C23C16/42 ,  C07F9/09 ,  C07F9/11 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316 ,  C07F11/00 ,  H01L21/8238

CPC分类号： H01L21/02148 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/126 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C07F9/091 ,  C07F9/11 ,  C23C16/30 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02159 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/31612 ,  H01L28/40 ,  H01L29/0684 ,  H01L29/42364 ,  H01L29/517

摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

摘要翻译： 金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。 例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热到300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。 类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基板上。以交替脉冲提供蒸气产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

公开(公告)号：US20050112282A1

公开(公告)日：2005-05-26

申请号：US10951464

申请日：2004-09-27

申请人： Roy Gordon ,  Jill Becker ,  Dennis Hausmann

发明人： Roy Gordon ,  Jill Becker ,  Dennis Hausmann

IPC分类号： C23C16/42 ,  C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/31 ,  H01L21/316 ,  H01L21/469

CPC分类号： C23C16/45534 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45555

摘要： This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.

摘要翻译： 本发明涉及在固体基底上薄膜沉积的材料和方法。 通过含铝化合物与硅烷醇的反应将二氧化硅/氧化铝纳米层压材料沉积在加热的基底上。 纳米层压板具有非常均匀的厚度和在具有40:1以上的纵横比的孔中的优异的台阶覆盖。 这些胶片是透明和良好的电绝缘体。 本发明还涉及用于生产用于微电子器件中的电导体的绝缘中的改进的多孔电介质材料的材料和方法，特别是通过用于生产半孔介电材料的材料和工艺，其中表面孔隙率被显着地减少或去除，同时保持内部孔隙率 以保持整个介电材料的期望的低k值。 本发明还可用于选择性地填充具有低k介电材料的窄沟槽，同时避免任何电介质沉积在沟槽外部的表面区域上。

公开(公告)号：US07700155B1

公开(公告)日：2010-04-20

申请号：US10821092

申请日：2004-04-08

申请人： Francisco Juarez ,  Dennis Hausmann ,  Bunsen Nie ,  Teresa Pong ,  Adrianne Tipton ,  Patrick Van Cleemput

发明人： Francisco Juarez ,  Dennis Hausmann ,  Bunsen Nie ,  Teresa Pong ,  Adrianne Tipton ,  Patrick Van Cleemput

IPC分类号： C23C16/00

CPC分类号： C23C16/45523 ,  C23C16/45589

摘要： A method of depositing material on a substrate comprises providing a reactor with a reaction chamber having a first volume, and contacting a surface of a substrate in the reaction chamber with a first precursor at the first chamber volume to react with and deposit a first layer on the substrate. The method further includes enlarging the reaction chamber to a second, larger volume and removing undeposited first precursor and any excess reaction product to end reaction of the first precursor with the substrate.

摘要翻译： 在衬底上沉积材料的方法包括提供具有第一体积的反应室的反应器，并且使反应室中的衬底的表面与第一室体积处的第一前体接触以与第一层反应并将第一层沉积在 底物。 该方法还包括将反应室扩大至第二较大体积并除去未沉积的第一前体和任何过量的反应产物以终止第一前体与基底的反应。