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    Onium salt compound and radiation-sensitive resin composition
    2.
    发明授权
    Onium salt compound and radiation-sensitive resin composition 有权
    ium盐化合物和辐射敏感性树脂组合物

    公开(公告)号：US07217492B2

    公开(公告)日：2007-05-15

    申请号：US10743809

    申请日：2003-12-24

    申请人： Eiji Yoneda ,  Yong Wang ,  Yukio Nishimura

    发明人： Eiji Yoneda ,  Yong Wang ,  Yukio Nishimura

    IPC分类号： G03F7/038 ,  G03F7/039 ,  C07C303/00 ,  C07C307/00 ,  C07C315/00

    CPC分类号： C07D317/72 ,  C07C317/14 ,  C07C381/12 ,  C07C2601/14 ,  C07C2602/42 ,  C07D319/08 ,  C07D333/46 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0757 ,  Y10S430/115 ,  Y10S430/122

    摘要： An onium salt compound having a cation moiety of the following formula (1) is disclosed. wherein A represents I or S, m is 1 or 2, n is 0 or 1, x is 1–10, and Ar1 and Ar2 are (substituted) aromatic hydrocarbon group, and P represents —O—SO2R, —O—S(O)R, or —SO2R, wherein R represents a hydrogen atom, a (substituted) alkyl group, or a (substituted) alicyclic hydrocarbon group. The onium salt compound is suitable as a photoacid generator for photoresists of a positive-tone radiation-sensitive resin composition. The positive-tone radiation-sensitive resin composition containing this compound is useful as a chemically-amplified photoresist exhibiting high resolution at high sensitivity, responsive to various radiations, and having outstanding storage stability.

    摘要翻译： 公开了具有下式（1）的阳离子部分的鎓盐化合物。 其中A表示I或S，m为1或2，n为0或1，x为1-10，Ar 1和Ar 2为（取代的）芳族烃基，P为-O-SO 2， （O）R或-SO 2 R，其中R表示氢原子，（取代的）烷基或（取代的）脂环族烃基。 鎓盐化合物适合作为正色散辐射敏感性树脂组合物的光致抗蚀剂的光致酸发生剂。 含有该化合物的正色散辐射敏感性树脂组合物可用作高灵敏度的高分辨率的化学扩增光致抗蚀剂，对各种辐射有响应，并且具有优异的储存稳定性。

    Onium salt compound and radiation-sensitive resin composition
    3.
    发明申请
    Onium salt compound and radiation-sensitive resin composition 有权
    ium盐化合物和辐射敏感性树脂组合物

    公开(公告)号：US20050053861A1

    公开(公告)日：2005-03-10

    申请号：US10743809

    申请日：2003-12-24

    申请人： Eiji Yoneda ,  Yong Wang ,  Yukio Nishimura

    发明人： Eiji Yoneda ,  Yong Wang ,  Yukio Nishimura

    IPC分类号： C07C317/14 ,  C07C381/12 ,  C07D317/72 ,  C07D319/08 ,  C07D333/46 ,  G03C1/76 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075

    CPC分类号： C07D317/72 ,  C07C317/14 ,  C07C381/12 ,  C07C2601/14 ,  C07C2602/42 ,  C07D319/08 ,  C07D333/46 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0757 ,  Y10S430/115 ,  Y10S430/122

    摘要： An onium salt compound having a cation moiety of the following formula (1) is disclosed. wherein A represents I or S, m is 1 or 2, n is 0 or 1, x is 1-10, and Ar1 and Ar2 are (substituted) aromatic hydrocarbon group, and P represents —O—SO2R, —O—S(O)R, or —SO2R, wherein R represents a hydrogen atom, a (substituted) alkyl group, or a (substituted) alicyclic hydrocarbon group. The onium salt compound is suitable as a photoacid generator for photoresists of a positive-tone radiation-sensitive resin composition. The positive-tone radiation-sensitive resin composition containing this compound is useful as a chemically-amplified photoresist exhibiting high resolution at high sensitivity, responsive to various radiations, and having outstanding storage stability.

    摘要翻译： 公开了具有下式（1）的阳离子部分的鎓盐化合物。 其中A表示I或S，m为1或2，n为0或1，x为1-10，Ar1和Ar2为（取代）芳族烃基，P为-O-SO2R，-OS（O） R或-SO 2 R，其中R表示氢原子，（取代的）烷基或（取代的）脂环族烃基。 鎓盐化合物适合作为正色散辐射敏感性树脂组合物的光致抗蚀剂的光致酸发生剂。 含有该化合物的正色散辐射敏感性树脂组合物可用作高灵敏度的高分辨率的化学扩增光致抗蚀剂，对各种辐射有响应，并且具有优异的储存稳定性。

    Radiation sensitive resin composition
    4.
    发明申请
    Radiation sensitive resin composition 审中-公开
    辐射敏感树脂组合物

    公开(公告)号：US20070042292A1

    公开(公告)日：2007-02-22

    申请号：US11504809

    申请日：2006-08-16

    申请人： Eiji Yoneda ,  Hirokazu Sakakibara ,  Hiromitsu Nakashima ,  Hiroki Nakagawa ,  Yukio Nishimura

    发明人： Eiji Yoneda ,  Hirokazu Sakakibara ,  Hiromitsu Nakashima ,  Hiroki Nakagawa ,  Yukio Nishimura

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/2041

    摘要： A radiation-sensitive resin composition which is a resist having properties such as excellent sensitivity, a small degree of line edge roughness of patterns, capability of inhibiting pattern collapsing, and the like is provided. The radiation-sensitive resin composition comprises an acid-dissociable group-containing polymer having recurring units of the following formulas (1-1) and (1-2), an additive of the following formula (1-3), and an acid generator, in the formula (1-1), R1 represents a methyl group and the like and X represents a specific polycyclic alicyclic hydrocarbon group and the like, in the formula (1-2), R1 represents a methyl group and the like and Z represents an acid-dissociable group which is dissociable by the action of an acid, and in the formula (1-3), n is an integer from 1-8 and A individually represents a hydroxyl group and the like.

    摘要翻译： 提供了作为抗敏剂的耐辐射敏感性树脂组合物，其具有优异的灵敏度，图案的线边缘粗糙度，抑制图案折叠的能力等。 辐射敏感性树脂组合物包含具有下式（1-1）和（1-2）的重复单元的酸解离基团的聚合物，下式（1-3）的添加剂和酸发生剂 在式（1-1）中，R 1表示甲基等，X表示特定的多环脂肪族烃基等，式（1-2）中，R' SUP> 1表示甲基等，Z表示可通过酸的作用而离解的酸解离基，在式（1-3）中，n为1-8的整数 A独立地表示羟基等。

    Silicon-containing film, resin composition, and pattern formation method
    6.
    发明授权
    Silicon-containing film, resin composition, and pattern formation method 有权
    含硅膜，树脂组合物和图案形成方法

    公开(公告)号：US08791020B2

    公开(公告)日：2014-07-29

    申请号：US13193555

    申请日：2011-07-28

    申请人： Takashi Mori ,  Masato Tanaka ,  Yukio Nishimura ,  Yoshikazu Yamaguchi

    发明人： Takashi Mori ,  Masato Tanaka ,  Yukio Nishimura ,  Yoshikazu Yamaguchi

    IPC分类号： H01L21/311

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02126 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/31144

    摘要： A pattern-forming method includes forming a silicon-containing film on a substrate, the silicon-containing film having a mass ratio of silicon atoms to carbon atoms of 2 to 12. A shape transfer target layer is formed on the silicon-containing film. A fine pattern is transferred to the shape transfer target layer using a stamper that has a fine pattern to form a resist pattern. The silicon-containing film and the substrate are dry-etched using the resist pattern as a mask to form a pattern on the substrate in nanoimprint lithography. According to another aspect of the invention, a silicon-containing film includes silicon atoms and carbon atoms. A mass ratio of silicon atoms to carbon atoms is 2 to 12. The silicon-containing film is used for a pattern-forming method employed in nanoimprint lithography.

    摘要翻译： 图案形成方法包括在基板上形成含硅膜，所述含硅膜的硅原子与碳原子的质量比为2〜12。在含硅膜上形成形状转印目标层。 使用具有精细图案的压模形成抗蚀剂图案，将精细图案转印到形状转印目标层。 使用抗蚀剂图案作为掩模对含硅膜和衬底进行干蚀刻，以在纳米压印光刻中在衬底上形成图案。 根据本发明的另一方面，含硅膜包括硅原子和碳原子。 硅原子与碳原子的质量比为2〜12。含硅膜用于纳米压印光刻中使用的图案形成方法。

    Storage apparatus and control method for storage apparatus
    7.
    发明授权
    Storage apparatus and control method for storage apparatus 有权
    存储装置的存储装置和控制方法

    公开(公告)号：US08572428B2

    公开(公告)日：2013-10-29

    申请号：US13279491

    申请日：2011-10-24

    申请人： Satoru Nishita ,  Yukio Nishimura

    发明人： Satoru Nishita ,  Yukio Nishimura

    IPC分类号： G06F11/00

    CPC分类号： G06F11/1443 ,  G06F11/10 ,  G06F11/2089 ,  H04L1/18

    摘要： A first controller stores externally input data to a memory of the first controller, reads data stored in the memory of the first controller and transmits the data to a second controller through a first controller bridge, detects a failure at the first controller bridge in transmission of the data. The second controller receives the data through a second controller bridge, writes the received data into a memory of the second controller, and determines whether the failure is caused by the first controller if a failure occurs in the memory controller and the second controller bridge. If a failure is detected in the first controller and the second controller and the failure is caused by the first controller, the first controller transmits the data causing the failure during transmission through the first controller bridge and the second controller receives the data through the second controller bridge.

    摘要翻译： 第一控制器将外部输入数据存储到第一控制器的存储器中，读取存储在第一控制器的存储器中的数据，并通过第一控制器桥将数据发送到第二控制器，在第一控制器桥传输期间检测故障 数据。 第二控制器通过第二控制器桥接器接收数据，将接收到的数据写入第二控制器的存储器，并且如果在存储器控制器和第二控制器桥中发生故障，则确定是否由第一控制器引起故障。 如果在第一控制器和第二控制器中检测到故障，并且由第一控制器引起故障，则第一控制器在通过第一控制器桥传输期间发送导致故障的数据，并且第二控制器通过第二控制器接收数据 桥。

    Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern
    8.
    发明授权
    Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern 有权
    用于形成用于浸渍曝光的上层膜的组合物，用于浸渍曝光的上层膜，以及形成光致抗蚀剂图案的方法

    公开(公告)号：US08431332B2

    公开(公告)日：2013-04-30

    申请号：US12680200

    申请日：2008-09-10

    申请人： Daita Kouno ,  Norihiko Sugie ,  Gouji Wakamatsu ,  Norihiro Natsume ,  Yukio Nishimura ,  Makoto Sugiura

    发明人： Daita Kouno ,  Norihiko Sugie ,  Gouji Wakamatsu ,  Norihiro Natsume ,  Yukio Nishimura ,  Makoto Sugiura

    IPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/38

    CPC分类号： G03F7/11 ,  G03F7/2041

    摘要： The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, R1 represents hydrogen or methyl; R2 and R3 each represents methylene, linear or branched C2-6 alkylene, or alicyclic C4-12 alkylene; R4 represents hydrogen or methyl; and R5 represents a single bond, methylene, or linear or branched C2-6 alkylene.].

    摘要翻译： 本发明的目的是提供一种用于形成用于浸渍曝光的上层膜的组合物，其能够通过诸如水印缺陷和溶解残留缺陷的浸渍曝光工艺有效地防止显影缺陷的形成。 还提供了用于浸渍曝光的上层膜和形成抗蚀剂图案的方法。 用于形成上层膜的组合物包括树脂成分和溶剂。 树脂成分包括具有选自由式（1-1）〜（1-3）表示的重复单元中的至少一种重复单元的树脂（A）和由式 （2-1）和（2-2）。 （1-1）（1-2）（1-3）（2-1）（2-2）[式中，R1表示氢或甲基; R2和R3各自表示亚甲基，直链或支链C 2-6亚烷基或脂环族C 4-12亚烷基; R4代表氢或甲基; 并且R 5表示单键，亚甲基或直链或支链C 2-6亚烷基。

    UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN
    10.
    发明申请
    UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN 有权
    上层膜成膜组合物及形成光电子图案的方法

    公开(公告)号：US20100040974A1

    公开(公告)日：2010-02-18

    申请号：US12442377

    申请日：2007-09-21

    申请人： Daita Kouno ,  Hiromitsu Nakashima ,  Yukio Nishimura

    发明人： Daita Kouno ,  Hiromitsu Nakashima ,  Yukio Nishimura

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/095 ,  G03F7/11 ,  G03F7/2041 ,  H01L21/0276

    摘要： An upper layer film forming composition for forming an upper layer film on the surface of a photoresist film includes (A) a resin dissolvable in a developer for the photoresist film and (B) a compound having a sulfonic acid residue group, the composition forming an upper layer film with a receding contact angle to water of 70° or more. The upper layer film forming composition of the present invention can form an upper layer film which has a sufficient transparency and is stably maintained without eluting the components into a medium without being intermixed with a photoresist film, can form a resist pattern with high resolution while effectively suppressing a defect, and can suppress a blob defect.

    摘要翻译： 在光致抗蚀剂膜的表面上形成上层膜的上层成膜组合物包括（A）可溶于光致抗蚀剂膜的显影剂中的树脂和（B）具有磺酸残基的化合物，该组合物形成 上层膜与水的后退接触角为70°以上。 本发明的上层成膜组合物可以形成具有足够透明度且稳定保持的上层膜，而不将组分洗脱到介质中而不与光致抗蚀剂膜混合，可以有效地形成高分辨率的抗蚀剂图案 抑制缺陷，能够抑制斑点缺陷。