公开(公告)号：US20160225853A1

公开(公告)日：2016-08-04

申请号：US15093053

申请日：2016-04-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jack O. Chu ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  Chun-Yung Sung

IPC: H01L29/16 ,  H01L29/161 ,  H01L29/04

CPC classification number: H01L29/1606 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B2204/04 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02667 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/161 ,  Y10T428/265

Abstract: A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm.

Abstract translation: 半导体 - 碳合金层形成在半导体衬底的表面上，半导体衬底的表面可以是诸如硅衬底的市售半导体衬底。 半导体 - 碳合金层在高温退火期间被转化为至少一个石墨烯层，在此期间半导体 - 碳合金层表面上的半导体材料对碳原子有选择性的蒸发。 随着半导体原子被选择性地去除并且半导体 - 碳合金层的表面上的碳浓度增加，半导体 - 碳合金层顶层中剩余的碳原子聚结形成具有至少一个石墨烯单层的石墨烯层 。 因此，可以在直径为200mm或300mm的市售半导体衬底上提供石墨烯层。

公开(公告)号：US09574287B2

公开(公告)日：2017-02-21

申请号：US14038139

申请日：2013-09-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Can Bayram ,  Christos D. Dimitrakopoulos ,  Keith E. Fogel ,  Jeehwan Kim ,  John A. Ott ,  Devendra K. Sadana

IPC: C30B25/00 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L29/16 ,  H01L33/00 ,  H01L33/32 ,  C30B29/02 ,  H01L33/12

CPC classification number: C30B25/18 ,  C30B25/183 ,  C30B29/02 ,  C30B29/406 ,  H01L21/0254 ,  H01L29/1606 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32

Abstract: A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate.

Abstract translation: 一种形成外延半导体材料的方法，其包括在半导体和含碳衬底上形成石墨烯层并在所述石墨烯层上沉积含金属的单层。 在含金属单层上形成含镓材料的外延层。 含有金属的单层的层叠堆叠和含镓材料的外延层从存在于半导体和含碳衬底上的石墨烯层切割。

公开(公告)号：US09397195B2

公开(公告)日：2016-07-19

申请号：US14064830

申请日：2013-10-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Guy Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill

IPC: H01L29/775 ,  H01L29/66 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/02 ,  H01L21/324 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L51/00 ,  H01L21/28 ,  H01L29/78 ,  H01L51/05 ,  B82Y99/00

CPC classification number: H01L29/66795 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02636 ,  H01L21/28008 ,  H01L21/30604 ,  H01L21/31051 ,  H01L21/324 ,  H01L29/0673 ,  H01L29/1025 ,  H01L29/1606 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/66787 ,  H01L29/775 ,  H01L29/785 ,  H01L51/0045 ,  H01L51/0048 ,  H01L51/0558

Abstract: Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed.

公开(公告)号：US09431520B2

公开(公告)日：2016-08-30

申请号：US14810017

申请日：2015-07-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Guy M. Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill

IPC: H01L29/66 ,  H01L29/775 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/02 ,  H01L21/324 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L51/00 ,  H01L21/28 ,  H01L29/78 ,  H01L51/05 ,  B82Y99/00

CPC classification number: H01L29/66795 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02636 ,  H01L21/28008 ,  H01L21/30604 ,  H01L21/31051 ,  H01L21/324 ,  H01L29/0673 ,  H01L29/1025 ,  H01L29/1606 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/66787 ,  H01L29/775 ,  H01L29/785 ,  H01L51/0045 ,  H01L51/0048 ,  H01L51/0558

Abstract: Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed.

公开(公告)号：US09236250B2

公开(公告)日：2016-01-12

申请号：US13924064

申请日：2013-06-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jack O. Chu ,  Christos D. Dimitrakopoulos ,  Marcus O. Freitag ,  Alfred Grill ,  Timothy J. McArdle ,  Robert L. Wisnieff

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/267

CPC classification number: H01L21/02447 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/267

Abstract: A single crystalline silicon carbide layer can be grown on a single crystalline sapphire substrate. Subsequently, a graphene layer can be formed by conversion of a surface layer of the single crystalline silicon layer during an anneal at an elevated temperature in an ultrahigh vacuum environment. Alternately, a graphene layer can be deposited on an exposed surface of the single crystalline silicon carbide layer. A graphene layer can also be formed directly on a surface of a sapphire substrate or directly on a surface of a silicon carbide substrate. Still alternately, a graphene layer can be formed on a silicon carbide layer on a semiconductor substrate. The commercial availability of sapphire substrates and semiconductor substrates with a diameter of six inches or more allows formation of a graphene layer on a commercially scalable substrate for low cost manufacturing of devices employing a graphene layer.

公开(公告)号：US09666674B2

公开(公告)日：2017-05-30

申请号：US14691270

申请日：2015-04-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Christos D. Dimitrakopoulos ,  Keith E. Fogel ,  Jeehwan Kim ,  Hongsik Park

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/027 ,  H01L21/20 ,  B32B9/04 ,  B32B37/26 ,  B32B38/10 ,  C01B31/00 ,  C01B31/04 ,  B32B9/00 ,  H01L23/532

CPC classification number: H01L29/1606 ,  B32B9/007 ,  B32B9/041 ,  B32B38/10 ,  B32B2307/202 ,  B32B2307/704 ,  C01B32/188 ,  H01L21/0272 ,  H01L21/2007 ,  H01L23/53276 ,  H01L2924/0002 ,  Y10T156/11 ,  Y10T156/1153 ,  Y10T428/24612 ,  Y10T428/26 ,  H01L2924/00

Abstract: A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate.

公开(公告)号：US09337274B2

公开(公告)日：2016-05-10

申请号：US13894954

申请日：2013-05-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Christos D. Dimitrakopoulos ,  Keith E. Fogel ,  Jeehwan Kim ,  Hongsik Park

IPC: H01L29/06 ,  H01L21/027 ,  H01L21/20 ,  B32B37/14 ,  C01B31/00 ,  B32B38/10 ,  B32B9/04 ,  H01L29/16 ,  B32B37/26 ,  C01B31/04 ,  B32B9/00 ,  H01L23/532

CPC classification number: H01L29/1606 ,  B32B9/007 ,  B32B9/041 ,  B32B38/10 ,  B32B2307/202 ,  B32B2307/704 ,  C01B32/188 ,  H01L21/0272 ,  H01L21/2007 ,  H01L23/53276 ,  H01L2924/0002 ,  Y10T156/11 ,  Y10T156/1153 ,  Y10T428/24612 ,  Y10T428/26 ,  H01L2924/00

Abstract: A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate.