公开(公告)号：US09165848B2

公开(公告)日：2015-10-20

申请号：US14347505

申请日：2011-09-29

申请人： Hirotaka Ohno ,  Takuya Kadoguchi

发明人： Hirotaka Ohno ,  Takuya Kadoguchi

IPC分类号： H01L23/10 ,  H01L23/48 ,  H01L23/28 ,  H01L25/18 ,  H01L23/433 ,  H01L23/492 ,  H01L25/07 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/28 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/492 ,  H01L23/562 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/0603 ,  H01L2224/3754 ,  H01L2224/40137 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： This semiconductor device includes: a first metal plate; a plurality of semiconductor elements mounted on the first metal plate; a spacer that is connected to a surface on the opposite side to the surface where the plurality of semiconductor elements are mounted on the first metal plate; a second metal plate that is connected to a surface on the opposite side to the surface where the spacer is connected to the semiconductor elements; and an encapsulating resin between the first plate and the second plate that seals the plurality of semiconductor elements. Stress due to contraction that occurs in the encapsulating resin between the plurality of semiconductor elements is relaxed to a greater extent than stress due to contraction that occurs in the encapsulating resin in the locations other than the location between the plurality of semiconductor devices.

摘要翻译： 该半导体装置包括：第一金属板; 安装在所述第一金属板上的多个半导体元件; 连接到与所述多个半导体元件安装在所述第一金属板上的表面相反侧的表面的间隔件; 第二金属板，其连接到与间隔件连接到半导体元件的表面相反侧的表面; 以及密封所述多个半导体元件的所述第一板和所述第二板之间的封装树脂。 由于在多个半导体元件之间的位置以外的位置处发生在封装树脂中的收缩引起的由于在多个半导体元件之间的封装树脂中发生的收缩而产生的收缩的应力被更大程度地松弛。

公开(公告)号：US20140232016A1

公开(公告)日：2014-08-21

申请号：US14347505

申请日：2011-09-29

申请人： Hirotaka Ohno ,  Takuya Kadoguchi

发明人： Hirotaka Ohno ,  Takuya Kadoguchi

IPC分类号： H01L23/28

CPC分类号： H01L23/28 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/492 ,  H01L23/562 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/0603 ,  H01L2224/3754 ,  H01L2224/40137 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： This semiconductor device includes: a first metal plate; a plurality of semiconductor elements mounted on the first metal plate; a spacer that is connected to a surface on the opposite side to the surface where the plurality of semiconductor elements are mounted on the first metal plate; a second metal plate that is connected to a surface on the opposite side to the surface where the spacer is connected to the semiconductor elements; and an encapsulating resin between the first plate and the second plate that seals the plurality of semiconductor elements. Stress due to contraction that occurs in the encapsulating resin between the plurality of semiconductor elements is relaxed to a greater extent than stress due to contraction that occurs in the encapsulating resin in the locations other than the location between the plurality of semiconductor devices.

摘要翻译： 该半导体装置包括：第一金属板; 安装在所述第一金属板上的多个半导体元件; 连接到与所述多个半导体元件安装在所述第一金属板上的表面相反侧的表面的间隔件; 第二金属板，其连接到与间隔件连接到半导体元件的表面相反侧的表面; 以及密封所述多个半导体元件的所述第一板和所述第二板之间的封装树脂。 由于在多个半导体元件之间的位置以外的位置处发生在封装树脂中的收缩引起的由于在多个半导体元件之间的封装树脂中发生的收缩而产生的收缩的应力被更大程度地松弛。

公开(公告)号：US20070284735A1

公开(公告)日：2007-12-13

申请号：US11596755

申请日：2005-10-06

申请人： Kazumasa Tanida ,  Shigo Higuchi ,  Takuya Kadoguchi

发明人： Kazumasa Tanida ,  Shigo Higuchi ,  Takuya Kadoguchi

IPC分类号： H01L23/12

CPC分类号： H01L24/10 ,  H01L23/3114 ,  H01L24/13 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06551 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device (1, 1A, 21, 31, 41, 51) provided with a first semiconductor chip (3) having a first functional surface (3F) formed with a first functional element (3a), a protective resin layer (12) provided on the first functional surface, and an external connection terminal (10, 19, 52) provided on a peripheral portion of the first functional surface for external electrical connection, the external connection terminal having a bottom surface (10B, 19BB) exposed from a bottom surface (12B) of the protective resin layer facing away from the first functional surface and a side surface (10S, 19BS) exposed from a side surface (12S) of the protective resin layer.

摘要翻译： 设置有具有形成有第一功能元件（3a）的第一功能面（3F）的第一半导体芯片（3）的半导体装置（1,1A，21,41,41），保护树脂层 （12），设置在所述第一功能面的外部电连接的周边部的外部连接端子（10,19,52），所述外部连接端子具有底面（10B，19 BB）从保护树脂层的背离第一功能表面的底表面（12A）暴露的侧表面（10A，BBS）以及从保护树脂层的侧表面（12S）露出的侧表面（10S，19BS）。

公开(公告)号：US20140197525A1

公开(公告)日：2014-07-17

申请号：US14117165

申请日：2011-05-16

申请人： Takuya Kadoguchi ,  Yoshikazu Suzuki ,  Masaya Kaji ,  Takanori Kawashima

发明人： Takuya Kadoguchi ,  Yoshikazu Suzuki ,  Masaya Kaji ,  Takanori Kawashima

IPC分类号： H01L23/495

CPC分类号： H01L23/49575 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/492 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/33 ,  H01L24/45 ,  H01L25/18 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4917 ,  H01L2224/73265 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power module configured to arrange a first electrode on a surface of which a first switching device is bonded, a second electrode on a surface of which a second switching device is bonded, and a third electrode by stacking the first electrode, the first switching device, the second electrode, the second switching device, and the third electrode in this order from the bottom in a stacking direction, characterized by first through third electrode pieces each connected to the first through third electrodes, first and second signal lines each connected to the first and second switching devices, wherein the first through third electrode pieces and the first and second signal lines are provided extending outward in the same plane as the second electrode.

摘要翻译： 一种电源模块，被配置为在其表面上结合有第一开关装置的第一电极，在其表面上接合第二开关装置的第二电极和通过堆叠所述第一电极的第三电极，所述第一开关装置 ，第二电极，第二开关器件和第三电极，从堆叠方向的底部开始，其特征在于，第一至第三电极片分别连接到第一至第三电极，第一和第二信号线各自连接到 第一和第二开关器件，其中第一至第三电极片以及第一和第二信号线设置在与第二电极相同的平面内向外延伸。

公开(公告)号：US08742556B2

公开(公告)日：2014-06-03

申请号：US13349993

申请日：2012-01-13

申请人： Takuya Kadoguchi ,  Tomomi Okumura ,  Tatsuya Miyoshi

发明人： Takuya Kadoguchi ,  Tomomi Okumura ,  Tatsuya Miyoshi

IPC分类号： H01L23/495

CPC分类号： H01L23/4334 ,  H01L23/3142 ,  H01L23/473 ,  H01L23/492 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/36 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/06181 ,  H01L2224/27013 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/3656 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/37099

摘要： A semiconductor module comprises: a metal block; a semiconductor device installed via a solder layer in a semiconductor device installation area on a surface of the metal block; and a molded portion formed by molding a resin on the metal block and the semiconductor device; wherein the surface of the metal block includes a plating area and a roughened area, and the semiconductor device installation area is provided in the plating area.

摘要翻译： 半导体模块包括：金属块; 半导体器件，其通过焊料层安装在所述金属块的表面上的半导体器件安装区域中; 以及通过在所述金属块和所述半导体器件上模制树脂而形成的模制部分; 其中金属块的表面包括电镀区域和粗糙区域，并且半导体器件安装区域设置在电镀区域中。

公开(公告)号：US08884411B2

公开(公告)日：2014-11-11

申请号：US14112408

申请日：2012-04-18

申请人： Takuya Kadoguchi ,  Shingo Iwasaki ,  Takanori Kawashima ,  Tomomi Okumura ,  Masayoshi Nishihata

发明人： Takuya Kadoguchi ,  Shingo Iwasaki ,  Takanori Kawashima ,  Tomomi Okumura ,  Masayoshi Nishihata

IPC分类号： H01L23/02 ,  H01L23/00 ,  H01L23/495

CPC分类号： H01L24/30 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor device includes a first semiconductor element; a first thick plate portion that is electrically connected to an electrode on a lower surface side of the first semiconductor element, and is formed by a conductor; a second semiconductor element that is arranged such that a main surface of the second semiconductor element faces a main surface of the first semiconductor element; a second thick plate portion that is electrically connected to an electrode on a lower surface side of the second semiconductor element, and is formed by a conductor; a third thick plate portion that is electrically connected to an electrode on an upper surface side of the first semiconductor element, and is formed by a conductor; a fourth thick plate portion that is electrically connected to an electrode on an upper surface side of the second semiconductor element, and is formed by a conductor; a first thin plate portion that is provided on the second thick plate portion, is formed by a conductor, and is thinner than the second thick plate portion; and a second thin plate portion that is provided on the third thick plate portion, is formed by a conductor, and is thinner than the third thick plate portion. The first thin plate portion and the second thin plate portion are fixed together and electrically connected.

摘要翻译： 半导体器件包括第一半导体元件; 与第一半导体元件的下表面侧的电极电连接并由导体形成的第一厚板部; 第二半导体元件，被布置成使得第二半导体元件的主表面面对第一半导体元件的主表面; 第二厚板部分，电连接到第二半导体元件的下表面侧的电极，并由导体形成; 第三厚板部，与第一半导体元件的上表面侧的电极电连接，由导体形成; 与第二半导体元件的上表面侧的电极电连接并由导体形成的第四厚板部; 设置在第二厚板部分上的第一薄板部分由导体形成，并且比第二厚板部分薄; 并且设置在第三厚板部分上的第二薄板部分由导体形成，并且比第三厚板部分薄。 第一薄板部分和第二薄板部分固定在一起并电连接。

公开(公告)号：US20140264819A1

公开(公告)日：2014-09-18

申请号：US14206781

申请日：2014-03-12

申请人： Tomomi Okumura ,  Takuya Kadoguchi

发明人： Tomomi Okumura ,  Takuya Kadoguchi

IPC分类号： H01L23/367

CPC分类号： H01L23/3672 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/492 ,  H01L23/49562 ,  H01L2224/49175 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a link portion that connects a second heat sink to a third heat sink via a solder. The solder is arranged on a connecting surface of a base portion of the link portion, which is orthogonal to a plate thickness direction of the base portion, in a direction perpendicular to first and second surfaces. The link portion has a rib that protrudes from the base portion in a direction orthogonal to the first and second surfaces, and a thickness of a portion where the rib is provided is equal to or less than the thickness of the corresponding heat sink. The rib is provided across an entire length of a first region that is sealed by a sealing resin body and that is between the second and the third heat sinks, in an alignment direction of a first heat sink and the third heat sink.

摘要翻译： 半导体器件包括通过焊料将第二散热器连接到第三散热器的连接部分。 焊料沿与第一表面和第二表面垂直的方向布置在与基部的板厚度方向正交的连接部的基部的连接表面上。 连杆部分具有在与第一和第二表面正交的方向上从基部突出的肋，并且肋的设置部分的厚度等于或小于相应的散热器的厚度。 在第一散热器和第三散热器的排列方向上，肋被设置在由密封树脂体密封并且位于第二和第三散热器之间的第一区域的整个长度上。

公开(公告)号：US20140035112A1

公开(公告)日：2014-02-06

申请号：US14112408

申请日：2012-04-18

申请人： Takuya Kadoguchi ,  Shingo Iwasaki ,  Takanori Kawashima ,  Tomomi Okumura ,  Masayoshi Nishihata

发明人： Takuya Kadoguchi ,  Shingo Iwasaki ,  Takanori Kawashima ,  Tomomi Okumura ,  Masayoshi Nishihata

IPC分类号： H01L23/00

CPC分类号： H01L24/30 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor device includes a first semiconductor element; a first thick plate portion that is electrically connected to an electrode on a lower surface side of the first semiconductor element, and is formed by a conductor; a second semiconductor element that is arranged such that a main surface of the second semiconductor element faces a main surface of the first semiconductor element; a second thick plate portion that is electrically connected to an electrode on a lower surface side of the second semiconductor element, and is formed by a conductor; a third thick plate portion that is electrically connected to an electrode on an upper surface side of the first semiconductor element, and is formed by a conductor; a fourth thick plate portion that is electrically connected to an electrode on an upper surface side of the second semiconductor element, and is formed by a conductor; a first thin plate portion that is provided on the second thick plate portion, is formed by a conductor, and is thinner than the second thick plate portion; and a second thin plate portion that is provided on the third thick plate portion, is formed by a conductor, and is thinner than the third thick plate portion. The first thin plate portion and the second thin plate portion are fixed together and electrically connected.

摘要翻译： 半导体器件包括第一半导体元件; 与第一半导体元件的下表面侧的电极电连接并由导体形成的第一厚板部; 第二半导体元件，被布置成使得第二半导体元件的主表面面对第一半导体元件的主表面; 第二厚板部分，电连接到第二半导体元件的下表面侧的电极，并由导体形成; 第三厚板部，与第一半导体元件的上表面侧的电极电连接，由导体形成; 与第二半导体元件的上表面侧的电极电连接并由导体形成的第四厚板部; 设置在第二厚板部分上的第一薄板部分由导体形成，并且比第二厚板部分薄; 并且设置在第三厚板部分上的第二薄板部分由导体形成，并且比第三厚板部分薄。 第一薄板部分和第二薄板部分固定在一起并电连接。

公开(公告)号：US09331001B2

公开(公告)日：2016-05-03

申请号：US13819209

申请日：2010-09-02

申请人： Takuya Kadoguchi ,  Yoshikazu Suzuki ,  Masaya Kaji ,  Kiyofumi Nakajima ,  Tatsuya Miyoshi ,  Takanori Kawashima ,  Tomomi Okumura

发明人： Takuya Kadoguchi ,  Yoshikazu Suzuki ,  Masaya Kaji ,  Kiyofumi Nakajima ,  Tatsuya Miyoshi ,  Takanori Kawashima ,  Tomomi Okumura

IPC分类号： H01L23/40 ,  H01L23/31 ,  H01L23/373 ,  H01L23/433 ,  H01L23/473 ,  H01L23/495 ,  H01L25/07 ,  H01L23/00

CPC分类号： H01L23/40 ,  G01N29/07 ,  G01N2291/044 ,  G01N2291/2697 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/4006 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/49548 ,  H01L24/36 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor module includes a semiconductor device; a metal plate portion that includes a first surface on a side of the semiconductor device and has a fastening portion at an end thereof; a molded portion that is formed by molding a resin on the semiconductor device and the metal plate portion, a cooling plate portion that is a separate member from the metal plate portion, is provided on a side opposite to the first surface on the side of the semiconductor device, and includes fins on a side opposite to the side of the metal plate portion; wherein the fastening portion of the metal plate portion is exposed out of the molded portion, and the cooling plate portion includes a fastening portion at a position that corresponds to a position of the fastening portion of the metal plate portion.

摘要翻译： 半导体模块包括半导体器件; 金属板部，其包括在半导体器件的一侧上的第一表面，并且在其端部具有紧固部分; 通过在半导体器件和金属板部分上模制树脂而形成的模制部分，作为与金属板部分分离的部件的冷却板部分设置在与金属板部分的侧面上的第一表面相对的一侧上 半导体器件，并且在与金属板部分的侧面相对的一侧包括翅片; 其特征在于，所述金属板部的所述固定部从所述模制部露出，所述冷却板部在与所述金属板部的所述固定部的位置对应的位置包括紧固部。

公开(公告)号：US09236330B2

公开(公告)日：2016-01-12

申请号：US13988602

申请日：2010-11-29

申请人： Takuya Kadoguchi ,  Takanori Kawashima ,  Tomomi Okumura

发明人： Takuya Kadoguchi ,  Takanori Kawashima ,  Tomomi Okumura

IPC分类号： H01L23/48 ,  H01L21/00 ,  H01L23/495 ,  H01L23/00 ,  H02M7/537 ,  H01L23/433 ,  H01L25/07 ,  H02M7/00

CPC分类号： H01L23/495 ,  H01L23/4334 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/32 ,  H01L24/33 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H02M7/537 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A power module according to the present invention includes a semiconductor device; a base part formed from an electrically conductive material on which the semiconductor device is mounted; a signal lead part formed from the same material as the base part, the signal lead part being electrically connected to the semiconductor device; and a thin plate lead part formed from the same material as the base part such that it is formed seamlessly from the base part and it is thinner than the base part, the thin plate lead part extending on the same side as the signal lead part with respect to the base part, wherein the thin plate lead part is electrically connected to a predetermined terminal of the semiconductor device via the base part such that it forms a potential detecting terminal for detecting a potential of the predetermined terminal of the semiconductor device.

摘要翻译： 根据本发明的功率模块包括半导体器件; 由其上安装有半导体器件的导电材料形成的基部; 由与所述基底部分相同的材料形成的信号引线部分，所述信号引线部分电连接到所述半导体器件; 以及由与基部相同的材料形成的薄板引线部，使得从基部无缝地形成并且比基部更薄，薄板引线部在与信号引线部相同的一侧延伸， 其特征在于，所述薄板引线部经由所述基底部与所述半导体器件的预定端子电连接，使得形成用于检测所述半导体器件的所述预定端子的电位的电位检测端子。