公开(公告)号：US10146131B2

公开(公告)日：2018-12-04

申请号：US14862352

申请日：2015-09-23

Applicant: JSR CORPORATION

Inventor： Shin-ya Nakafuji ,  Fumihiro Toyokawa ,  Gouji Wakamatsu ,  Yoshio Takimoto ,  Katsuhisa Mizoguchi ,  Takashi Okada ,  Takaaki Uno ,  Takeshi Endo ,  Masaki Moritsugu

IPC: G03F7/11 ,  C07D493/10 ,  C08G65/40 ,  C07C255/54 ,  C08G65/38 ,  C09D171/00 ,  G03F7/16 ,  G03F7/36 ,  H01L21/02 ,  C09D171/10 ,  G03F7/09

Abstract: A composition includes a compound including a partial structure represented by formula (1), and solvent. In the formula (1), X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with the spiro carbon atom and the carbon atoms of the aromatic ring adjacent to X1 or X2; n1 and n2 are each independently an integer of 0 to 2; and the sum of k1 and k2 are each independently an integer of 1 to 8, wherein the sum of k1 and k2 is no less than 2 and no greater than 16. The compound is preferably represented by formula (2). The sum of k1 and k2 in the formula (1) is preferably no less than 3.

公开(公告)号：US09607849B2

公开(公告)日：2017-03-28

申请号：US14249432

申请日：2014-04-10

Applicant: JSR CORPORATION

Inventor： Kazuhiko Koumura ,  Shinya Minegishi ,  Takashi Mori ,  Kyoyu Yasuda ,  Yoshio Takimoto ,  Shinya Nakafuji ,  Toru Kimura

IPC: G03F7/09 ,  G03F7/20 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/033

CPC classification number: H01L21/3081 ,  G03F7/094 ,  H01L21/02164 ,  H01L21/0271 ,  H01L21/033 ,  H01L21/31116 ,  H01L21/31138

Abstract: A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

公开(公告)号：US20220172803A1

公开(公告)日：2022-06-02

申请号：US17671745

申请日：2022-02-15

Applicant: JSR CORPORATION

Inventor： Junta FUCHIWAKI ,  Yoshio Takimoto

IPC: G16C20/10 ,  G16C20/70

Abstract: A chemical structure generating device according to the present invention includes a generator and a controller. The generator produces a product list including one or more compounds, based on a reactant list including one or more compounds and a chemical reaction list. The controller applies the product list as a new reactant list to the generator, updates a database having at least one list of the reactant list and the product list, and allows the generator to produce a new product list based on the new reactant list and the chemical reaction list.

公开(公告)号：US20160314984A1

公开(公告)日：2016-10-27

申请号：US15134508

申请日：2016-04-21

Applicant: JSR CORPORATION

Inventor： Yuushi MATSUMURA ,  Goji Wakamatsu ,  Naoya Nosaka ,  Tsubasa Abe ,  Yoshio Takimoto

IPC: H01L21/308 ,  G03F7/11 ,  H01L21/3065

CPC classification number: G03F7/11 ,  C08G8/22 ,  C08G8/30 ,  C09D161/14 ,  G03F7/0041 ,  G03F7/094 ,  H01L21/0271

Abstract: A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500° C. or higher and 600° C. or lower.

Abstract translation: 一种方法包括在基底上施加组合物以在基底上形成涂膜。 在氧气浓度小于1体积％且温度高于450℃和800℃以下的气氛中加热涂膜，以在基材上形成膜。 该组合物包含包含芳环的化合物。 涂膜加热时的气氛中的氧浓度优选为0.1体积％以下。 涂膜加热时的气氛温度优选为500℃以上，600℃以下。

公开(公告)号：US09182671B2

公开(公告)日：2015-11-10

申请号：US13630340

申请日：2012-09-28

Applicant: JSR CORPORATION

Inventor： Shinya Nakafuji ,  Satoru Murakami ,  Yoshio Takimoto ,  Masayuki Motonari

IPC: H01L21/302 ,  C08F10/00 ,  G03F7/095 ,  G03F7/038 ,  C08G61/02 ,  H01L21/027

CPC classification number: G03F7/095 ,  C08G61/02 ,  C08G2261/3422 ,  G03F7/0384 ,  H01L21/0271

Abstract: A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Ar1 and Ar2 each independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask.

Abstract translation: 形成图案的方法包括使用第一组合物形成抗蚀剂下层膜，在基片上提供抗蚀剂下层膜。 第一组合物包括具有由下式（1）表示的结构单元的聚合物。 在式（1）中，Ar 1和Ar 2各自独立地表示由下式（2）表示的二价基团。 使用抗蚀剂组合物在抗蚀剂下层膜上设置抗蚀剂涂膜。 使用抗蚀剂涂膜形成抗蚀剂图案。 通过使用抗蚀剂图案作为掩模，依次干蚀刻抗蚀剂下层膜和基板，在基板上形成预定图案。

公开(公告)号：US08871432B2

公开(公告)日：2014-10-28

申请号：US13852120

申请日：2013-03-28

Applicant: JSR Corporation

Inventor： Shin-ya Minegishi ,  Satoru Murakami ,  Yushi Matsumura ,  Kazuhiko Komura ,  Yoshio Takimoto ,  Shin-ya Nakafuji ,  Kyoyu Yasuda

IPC: G03F7/26 ,  G03F7/004 ,  G03F7/11 ,  G03F7/40 ,  G03F7/09 ,  C08G8/08 ,  C08G8/22 ,  C08G8/28 ,  C09D161/06

CPC classification number: G03F7/004 ,  C08G8/08 ,  C08G8/22 ,  C08G8/28 ,  C09D161/06 ,  G03F7/094 ,  G03F7/11 ,  G03F7/26 ,  G03F7/40

Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Abstract translation: 图案形成方法包括：（1）抗蚀剂下层膜形成步骤，通过涂布含有酚羟基的树脂的抗蚀剂下层膜形成组合物，在基材的上表面侧上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜的上表面侧形成抗蚀剂图案的抗蚀剂图案形成工序; （3）借助于抗蚀剂图案作为掩模，至少对抗蚀剂下层膜和基板进行干蚀刻的图案形成步骤，以在基板上形成图案; 以及（4）以（1）〜（4）的顺序用碱性溶液除去基板上的抗蚀剂下层膜的抗蚀剂下层膜除去工序。

公开(公告)号：US20220310212A1

公开(公告)日：2022-09-29

申请号：US17807079

申请日：2022-06-15

Applicant: JSR CORPORATION

Inventor： Junta Fuchiwaki ,  Yuya Onishi ,  Yoshio Takimoto

IPC: G16C10/00 ,  G06N10/60

Abstract: A method is implemented to select a calculator for performing given processing using a quantum algorithm or a combined algorithm of a classical algorithm and the quantum algorithm. The method comprises a calculation operation, a selection operation, and a control operation. The calculation operation calculates a quantum bit or a quantum volume for performing the given processing using the quantum algorithm, or for a portion of the quantum algorithm when performing the given processing using the combined algorithm. The selection operation selects a calculator for performing the given processing based on the quantum bit or the quantum volume. The control operation generates a control signal to be transmitted to the quantum calculator when the selected calculator includes a quantum calculator. The control signal may correspond to an instruction that initiates the quantum calculator to start the quantum algorithm.

公开(公告)号：US11126084B2

公开(公告)日：2021-09-21

申请号：US16388238

申请日：2019-04-18

Applicant: JSR CORPORATION

Inventor： Naoya Nosaka ,  Goji Wakamatsu ,  Tsubasa Abe ,  Yuushi Matsumura ,  Yoshio Takimoto ,  Shin-ya Nakafuji ,  Kazunori Sakai

IPC: G03F7/11 ,  C08G61/02 ,  C09D165/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C07C35/37 ,  C07C33/28 ,  C07C35/44 ,  C07C43/166 ,  H01L21/027 ,  H01L21/308 ,  C08F299/02 ,  H01L21/3065

Abstract: A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.

公开(公告)号：US09958781B2

公开(公告)日：2018-05-01

申请号：US15134508

申请日：2016-04-21

Applicant: JSR CORPORATION

Inventor： Yuushi Matsumura ,  Goji Wakamatsu ,  Naoya Nosaka ,  Tsubasa Abe ,  Yoshio Takimoto

IPC: G03F7/11 ,  C09D161/14 ,  C08G8/30 ,  C08G8/22 ,  G03F7/09 ,  H01L21/027 ,  G03F7/004

CPC classification number: G03F7/11 ,  C08G8/22 ,  C08G8/30 ,  C09D161/14 ,  G03F7/0041 ,  G03F7/094 ,  H01L21/0271

Abstract: A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500° C. or higher and 600° C. or lower.

公开(公告)号：US20170003592A1

公开(公告)日：2017-01-05

申请号：US15267840

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Masayoshi ISHIKAWA ,  Hiromitsu Tanaka ,  Tomoharu Kawazu ,  Junya Suzuki ,  Tomoaki Seko ,  Yoshio Takimoto

IPC: G03F7/09 ,  H01L21/311 ,  G03F7/075 ,  H01L21/027 ,  G03F7/40 ,  G03F7/16

CPC classification number: G03F7/094 ,  G03F7/0752 ,  G03F7/16 ,  G03F7/405 ,  G03F7/425 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31144

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group. SiX4   (1)

Abstract translation: 本发明是一种图案形成方法，其包括：在基板的一个表面上形成抗蚀剂下层膜的步骤; 在所述抗蚀剂下层膜的表面上形成含硅膜的步骤，所述表面位于所述基板侧表面的相反侧; 以及使用碱性水溶液除去含硅膜的工序。 该图案形成方法不包括在含硅膜形成步骤之后和含硅膜去除步骤之前使用含有酸或氟化合物的处理液来处理含硅膜的步骤。 优选含硅膜由含有式（1）表示的化合物的组合物的水解缩合物形成为全部硅化合物的60摩尔％以上的量。 SiX4（1）（式（1）中，X表示卤素原子或-OR2，R2表示一价有机基团。