公开(公告)号：US08728867B2

公开(公告)日：2014-05-20

申请号：US13355792

申请日：2012-01-23

申请人： Kozo Shimizu ,  Keishiro Okamoto ,  Nobuhiro Imaizumi ,  Tadahiro Imada ,  Keiji Watanabe

发明人： Kozo Shimizu ,  Keishiro Okamoto ,  Nobuhiro Imaizumi ,  Tadahiro Imada ,  Keiji Watanabe

IPC分类号： H01L21/44

CPC分类号： H01L23/48 ,  H01L23/3128 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05005 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05541 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/26175 ,  H01L2224/2745 ,  H01L2224/2746 ,  H01L2224/29019 ,  H01L2224/29036 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/2912 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/325 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48644 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/83193 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/13064 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/83439 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/0132 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/0665 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area.

摘要翻译： 半导体器件的制造包括在支撑板的半导体芯片安装区域和半导体芯片的后表面中的一个上形成具有第一金属的层和具有第二金属的层; 在第一金属层和第二金属层之间形成与第一金属层和第二金属层之间的一个区域对应的区域的另一层 的半导体芯片安装区域和半导体芯片的背面; 以及在将所述半导体芯片定位在所述半导体芯片安装区域中之后，形成与所述第一金属和所述第二金属合金的层，以将半导体芯片与半导体芯片安装区域接合。

公开(公告)号：US5977637A

公开(公告)日：1999-11-02

申请号：US769529

申请日：1996-12-19

申请人： Toshiya Akamatsu ,  Kazuaki Karasawa ,  Teru Nakanishi ,  Kozo Shimizu

发明人： Toshiya Akamatsu ,  Kazuaki Karasawa ,  Teru Nakanishi ,  Kozo Shimizu

IPC分类号： B23K35/26 ,  H01L21/60 ,  H01L23/485 ,  H05K3/34 ,  H01L23/48

CPC分类号： H01L24/16 ,  B23K35/26 ,  H01L24/13 ,  H01L24/81 ,  H05K3/3436 ,  H01L2224/1147 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13201 ,  H01L2224/13211 ,  H01L2224/133 ,  H01L2224/16506 ,  H01L2224/81097 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81201 ,  H01L2224/81805 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  Y02P70/613

摘要： An integrated electronic device having an electric connection between a first electrode of a semiconductor chip and a second electrode of a circuit board. One embodiment according to the present invention is a method for fabricating an integrated electronic device having an electric connection between a first electrode of a semiconductor chip and a second electrode of a circuit board, both surfaces of the first and second electrodes having an adhesive tendency to molten metal, the method comprising the steps of forming a metal bump on the first electrode, the metal bump being made of a soldering metal alloy consisting of a solid phase component and a liquid phase component at an operating temperature; and forming an electric connection between the first electrode and the second electrode by heating the soldering metal alloy so as to adhere to the surface of the second electrode.

摘要翻译： 一种在半导体芯片的第一电极和电路板的第二电极之间具有电连接的集成电子设备。 根据本发明的一个实施例是一种用于制造在半导体芯片的第一电极和电路板的第二电极之间具有电连接的集成电子器件的方法，所述第一和第二电极的两个表面具有粘合倾向 所述方法包括以下步骤：在所述第一电极上形成金属凸块，所述金属凸块由在工作温度下由固相组分和液相组分组成的焊接金属合金制成; 以及通过加热所述焊接金属合金以在所述第一电极和所述第二电极的表面之间形成电连接。

公开(公告)号：US11217891B2

公开(公告)日：2022-01-04

申请号：US16774549

申请日：2020-01-28

申请人： Daiki Monma ,  Kozo Shimizu ,  Takahiro Oshima ,  Kazunari Saito

发明人： Daiki Monma ,  Kozo Shimizu ,  Takahiro Oshima ,  Kazunari Saito

IPC分类号： H01Q1/38 ,  H01Q5/314 ,  H01Q9/04 ,  H01Q21/06

摘要： An antenna device includes an antenna unit that receives radio waves of a plurality of first frequency bands and outputs received signals, and a first band pass filter that transmits, out of the received signals that are output, received signals of at least two second frequency bands out of the first frequency bands.

公开(公告)号：US08174455B2

公开(公告)日：2012-05-08

申请号：US12477379

申请日：2009-06-03

申请人： Akira Miyoshi ,  Kozo Shimizu

发明人： Akira Miyoshi ,  Kozo Shimizu

IPC分类号： H01Q1/38 ,  H01Q21/00

CPC分类号： H01Q9/0414 ,  H01Q5/378

摘要： An antenna element is disclosed. A substrate is made of dielectric material and has a first face. A first antenna element is made of conductive material and is provided on the first face. A first power feeding portion is made of conductive material and is disposed on the first antenna element. A second antenna element is made of conductive material, is provided on the first face, and forms a loop surrounding the first antenna element with a gap. A second power feeding portion is made of conductive material. The second power feeding portion is extended from the second antenna element toward the first antenna element and is arranged to form an electromagnetic coupling with the first antenna element. A perturbation element is made of conductive material and is extended from the second antenna element. A length of loop is twice a circumferential length of the first antenna element.

摘要翻译： 公开了一种天线元件。 基板由电介质材料制成并具有第一面。 第一天线元件由导电材料制成并且设置在第一面上。 第一馈电部分由导电材料制成并且设置在第一天线元件上。 第二天线元件由导电材料制成，设置在第一面上，并形成围绕第一天线元件的间隙。 第二供电部分由导电材料制成。 第二馈电部分从第二天线元件朝向第一天线元件延伸并且被布置成与第一天线元件形成电磁耦合。 扰动元件由导电材料制成并从第二天线元件延伸。 环的长度是第一天线元件的圆周长度的两倍。

公开(公告)号：US5611481A

公开(公告)日：1997-03-18

申请号：US504080

申请日：1995-07-19

申请人： Toshiya Akamatsu ,  Kazuaki Karasawa ,  Teru Nakanishi ,  Kozo Shimizu

发明人： Toshiya Akamatsu ,  Kazuaki Karasawa ,  Teru Nakanishi ,  Kozo Shimizu

IPC分类号： B23K35/26 ,  H01L21/60 ,  H01L23/485 ,  H05K3/34 ,  H01L21/58

CPC分类号： H01L24/16 ,  B23K35/26 ,  H01L24/13 ,  H01L24/81 ,  H05K3/3436 ,  H01L2224/1147 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13201 ,  H01L2224/13211 ,  H01L2224/133 ,  H01L2224/16506 ,  H01L2224/81097 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81201 ,  H01L2224/81805 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  Y02P70/613

摘要： An integrated electronic device having an electric connection between a first electrode of a semiconductor chip and a second electrode of a circuit board. One embodiment according to the present invention is a method for fabricating an integrated electronic device having an electric connection between a first electrode of a semiconductor chip and a second electrode of a circuit board, both surfaces of the first and second electrodes having an adhesive tendency to molten metal, the method comprising the steps of forming a metal bump on the first electrode, the metal bump being made of a soldering metal alloy consisting of a solid phase component and a liquid phase component at an operating temperature; and forming an electric connection between the first electrode and the second electrode by heating the soldering metal alloy so as to adhere to the surface of the second electrode.

摘要翻译： 一种在半导体芯片的第一电极和电路板的第二电极之间具有电连接的集成电子设备。 根据本发明的一个实施例是一种用于制造在半导体芯片的第一电极和电路板的第二电极之间具有电连接的集成电子器件的方法，所述第一和第二电极的两个表面具有粘合倾向 所述方法包括以下步骤：在所述第一电极上形成金属凸块，所述金属凸块由在工作温度下由固相组分和液相组分组成的焊接金属合金制成; 以及通过加热所述焊接金属合金以在所述第一电极和所述第二电极的表面之间形成电连接。

公开(公告)号：US4732631A

公开(公告)日：1988-03-22

申请号：US884900

申请日：1986-07-14

申请人： Kozo Shimizu

发明人： Kozo Shimizu

IPC分类号： A44B19/34 ,  A44B18/00 ,  B31D1/02 ,  B32B31/08 ,  B32B31/18

CPC分类号： B31D1/021 ,  A44B18/0069 ,  B31D1/026 ,  Y10T156/1054 ,  Y10T156/108 ,  Y10T156/1313 ,  Y10T24/27 ,  Y10T24/2758

摘要： A tape having a series of surface-type fastener pieces is manufactured by intermittently feeding a surface-type fastener tape blank composed of a release sheet of paper and a surface-type fastener of synthetic resin attached by an adhesive layer to the release sheet and comprising a base strip and a plurality of fastening elements, and fusing the surface-type fastener in a predetermined pattern by ultrasonic or high-frequency welding to produce gaps which define a series of surface-type fastener pieces on the release sheet. The release sheet with the series of surface-type fastener pieces attached thereto by the adhesive layer is then separated from a scrap composed of a surface-type fastener web from which the surface-type fastener pieces have been blanked out. Each of the surface-type fastener pieces is fused along its peripheral edge to prevent the fastening elements thereon from unraveling.

摘要翻译： 具有一系列表面型紧固件的胶带通过将由剥离纸构成的表面型拉链带坯料和由粘合剂层附着的合成树脂的表面型紧固件间歇地进给到剥离片而制造，并且包括 基底条和多个紧固元件，并且通过超声波或高频焊接将表面型紧固件以预定图案进行定影，以产生在剥离片上限定一系列表面型紧固件的间隙。 然后将具有通过粘合剂层附接到其上的一系列表面型紧固件的剥离片与由表面型紧固件片材组成的废料分离，表面类型的紧固件已经从该表面型紧固件片坯消失。 每个表面型紧固件沿着其周边边缘熔合，以防止其上的紧固元件松开。

公开(公告)号：US20090303143A1

公开(公告)日：2009-12-10

申请号：US12477379

申请日：2009-06-03

申请人： Akira Miyoshi ,  Kozo Shimizu

发明人： Akira Miyoshi ,  Kozo Shimizu

IPC分类号： H01Q1/38 ,  H01Q21/00

CPC分类号： H01Q9/0414 ,  H01Q5/378

摘要： An antenna element is disclosed. A substrate is made of dielectric material and has a first face. A first antenna element is made of conductive material and is provided on the first face. A first power feeding portion is made of conductive material and is disposed on the first antenna element. A second antenna element is made of conductive material, is provided on the first face, and forms a loop surrounding the first antenna element with a gap. A second power feeding portion is made of conductive material. The second power feeding portion is extended from the second antenna element toward the first antenna element and is arranged to form an electromagnetic coupling with the first antenna element. A perturbation element is made of conductive material and is extended from the second antenna element. A length of loop is twice a circumferential length of the first antenna element.

摘要翻译： 公开了一种天线元件。 基板由电介质材料制成并具有第一面。 第一天线元件由导电材料制成并且设置在第一面上。 第一馈电部分由导电材料制成并且设置在第一天线元件上。 第二天线元件由导电材料制成，设置在第一面上，并形成围绕第一天线元件的间隙。 第二供电部分由导电材料制成。 第二馈电部分从第二天线元件朝向第一天线元件延伸并且被布置成与第一天线元件形成电磁耦合。 扰动元件由导电材料制成并从第二天线元件延伸。 环的长度是第一天线元件的圆周长度的两倍。

公开(公告)号：US20070218312A1

公开(公告)日：2007-09-20

申请号：US11473014

申请日：2006-06-23

申请人： Seiki Sakuyama ,  Kozo Shimizu

发明人： Seiki Sakuyama ,  Kozo Shimizu

IPC分类号： B32B15/01

CPC分类号： C22C13/00 ,  B32B15/015 ,  C22C9/02 ,  C22C13/02 ,  C23C18/1601 ,  C23C18/1651 ,  C23C18/1692 ,  C23C18/18 ,  C23C18/1848 ,  C23C18/48 ,  C23C18/52 ,  H01L2924/0002 ,  Y10T428/12715 ,  H01L2924/00

摘要： A plated structure is disclosed that includes a base formed of a copper-based material containing copper as a major component, a plating film formed of a tin-based material containing tin as a major component and provided over the base, and a tin-copper compound barrier film located at the boundary between the base and the plating film. The density of the tin-copper compound barrier film is greater than that of copper.

摘要翻译： 公开了一种电镀结构，其包括由以铜为主要成分的铜基材料形成的基底，由锡作为主要成分并且设置在基底上的锡基材料形成的镀膜，以及锡 - 铜 复合阻挡膜位于基底与镀膜之间的边界处。 锡 - 铜化合物阻挡膜的密度大于铜的密度。

公开(公告)号：US07025906B2

公开(公告)日：2006-04-11

申请号：US10087913

申请日：2002-03-05

申请人： Kozo Shimizu ,  Yasuo Yamagishi

发明人： Kozo Shimizu ,  Yasuo Yamagishi

IPC分类号： H01B1/22

CPC分类号： H01B1/22 ,  H01B1/02 ,  H01C7/005 ,  H01C7/008 ,  H01C17/06526 ,  H01C17/06586 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01322 ,  H05K3/321 ,  H05K3/3484 ,  H05K2201/0218 ,  H05K2203/0425 ,  Y10T428/2982 ,  Y10T428/2991

摘要： A conductive composition layer, conductive particles as a raw material, a conductive composition therefor, a manufacturing method of the conductive composition layer, etc. are provided wherewith heat conductance can be accelerated between electronic devices or electronic devices can be electrically connected. The conductive composition layer is formed by subjecting to heat treatment at a temperature lower than 230° C. a conductive composition comprising conductive particles having a metal base material and a metal coating material thereon as well as a thermosetting resin having a curing temperature that is lower than 230° C. and/or a thermoplastic resin having a melting point that is lower than 230° C.

公开(公告)号：USD515076S1

公开(公告)日：2006-02-14

申请号：US29230808

申请日：2005-05-27

申请人： Kanenari Kusanagi ,  Junichi Noro ,  Kozo Shimizu

设计人： Kanenari Kusanagi ,  Junichi Noro ,  Kozo Shimizu