-
1.发明申请SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND POWER SOURCE DEVICE 有权半导体器件，半导体器件的制造方法和电源器件公开(公告)号：US20120211901A1
公开(公告)日：2012-08-23
申请号：US13355792
申请日：2012-01-23
CPC分类号： H01L23/48 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05005 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05541 , H01L2224/05573 , H01L2224/05644 , H01L2224/0603 , H01L2224/26175 , H01L2224/2745 , H01L2224/2746 , H01L2224/29019 , H01L2224/29036 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/2912 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/325 , H01L2224/32502 , H01L2224/32506 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/48644 , H01L2224/48744 , H01L2224/4903 , H01L2224/73265 , H01L2224/83193 , H01L2224/83194 , H01L2224/83801 , H01L2224/83851 , H01L2924/00013 , H01L2924/01029 , H01L2924/01322 , H01L2924/13064 , H01L2924/15311 , H01L2924/181 , H01L2224/83439 , H01L2924/00014 , H01L2924/00012 , H01L2924/0132 , H01L2924/01047 , H01L2924/0105 , H01L2924/0665 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area.
摘要翻译： 半导体器件的制造包括在支撑板的半导体芯片安装区域和半导体芯片的后表面中的一个上形成具有第一金属的层和具有第二金属的层; 在第一金属层和第二金属层之间形成与第一金属层和第二金属层之间的一个区域对应的区域的另一层 的半导体芯片安装区域和半导体芯片的背面; 以及在将所述半导体芯片定位在所述半导体芯片安装区域中之后，形成与所述第一金属和所述第二金属合金的层，以将半导体芯片与半导体芯片安装区域接合。
-
2.发明授权Semiconductor device, manufacturing method of semiconductor device, and power source device 有权半导体装置，半导体装置的制造方法以及电源装置公开(公告)号：US08728867B2
公开(公告)日：2014-05-20
申请号：US13355792
申请日：2012-01-23
IPC分类号： H01L21/44
CPC分类号： H01L23/48 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05005 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05541 , H01L2224/05573 , H01L2224/05644 , H01L2224/0603 , H01L2224/26175 , H01L2224/2745 , H01L2224/2746 , H01L2224/29019 , H01L2224/29036 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/2912 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/325 , H01L2224/32502 , H01L2224/32506 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/48644 , H01L2224/48744 , H01L2224/4903 , H01L2224/73265 , H01L2224/83193 , H01L2224/83194 , H01L2224/83801 , H01L2224/83851 , H01L2924/00013 , H01L2924/01029 , H01L2924/01322 , H01L2924/13064 , H01L2924/15311 , H01L2924/181 , H01L2224/83439 , H01L2924/00014 , H01L2924/00012 , H01L2924/0132 , H01L2924/01047 , H01L2924/0105 , H01L2924/0665 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area.
摘要翻译： 半导体器件的制造包括在支撑板的半导体芯片安装区域和半导体芯片的后表面中的一个上形成具有第一金属的层和具有第二金属的层; 在第一金属层和第二金属层之间形成与第一金属层和第二金属层之间的一个区域对应的区域的另一层 的半导体芯片安装区域和半导体芯片的背面; 以及在将所述半导体芯片定位在所述半导体芯片安装区域中之后，形成与所述第一金属和所述第二金属合金的层，以将半导体芯片与半导体芯片安装区域接合。
-
公开(公告)号：US08492784B2
公开(公告)日：2013-07-23
申请号：US13331090
申请日：2011-12-20
IPC分类号： H01L33/00
CPC分类号： H01L23/3135 , H01L23/3121 , H01L23/3142 , H01L24/45 , H01L24/48 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/8592 , H01L2924/00014 , H01L2924/09701 , H01L2924/13064 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the semiconductor chip, the first resin layer including a coupling agent; a second resin layer on the first resin layer, the second resin layer including a surfactant; and a sealing resin layer to seal the semiconductor chip with the first resin layer and the second resin layer.
摘要翻译： 半导体器件包括：半导体芯片，其包括具有载流子迁移层和载流子供给层的氮化物半导体层叠结构; 在所述半导体芯片上的第一树脂层，所述第一树脂层包含偶联剂; 在第一树脂层上的第二树脂层，第二树脂层包括表面活性剂; 以及用第一树脂层和第二树脂层密封半导体芯片的密封树脂层。
-
4.发明申请公开(公告)号：US20120217626A1
公开(公告)日：2012-08-30
申请号：US13353666
申请日：2012-01-19
IPC分类号： H01L23/495 , H01L21/58
CPC分类号： H03F1/3247 , H01L21/4825 , H01L23/49524 , H01L23/49558 , H01L23/49562 , H01L24/36 , H01L24/40 , H01L24/84 , H01L2224/40245 , H01L2224/83801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12032 , H01L2924/1306 , H01L2924/13064 , H01L2924/181 , H03F3/189 , H03F3/24 , H03F2200/204 , H03F2200/451 , H01L2924/00 , H01L2924/00012 , H01L2224/37099 , H01L2224/84
摘要： A method for manufacturing a semiconductor device, includes: placing a seal layer including a connection conductive film on the surface so that the connection conductive film is in contact with an electrode of a semiconductor element and a lead; electrically coupling the electrode and the lead through the connection conductive film; and sealing the semiconductor element by the seal layer.
摘要翻译： 一种半导体器件的制造方法，其特征在于，包括：将具有连接导电膜的密封层放置在所述表面上，使得所述连接导电膜与半导体元件的电极和引线接触; 通过连接导电膜电连接电极和引线; 并通过密封层密封半导体元件。
-
5.发明申请SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ELECTRONIC CIRCUIT 审中-公开半导体器件，制造半导体器件和电子电路的方法公开(公告)号：US20120211762A1
公开(公告)日：2012-08-23
申请号：US13334766
申请日：2011-12-22
IPC分类号： H01L29/778 , H01L21/56 , H01L23/48 , H01L29/20
CPC分类号： H01L29/7787 , H01L23/3107 , H01L23/4952 , H01L23/49562 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L29/41766 , H01L29/66462 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/0603 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/48599 , H01L2224/48699 , H01L2224/49 , H01L2224/8592 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/01073 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/1033 , H01L2924/10344 , H01L2924/1306 , H01L2924/13064 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/206
摘要： A semiconductor device includes: a semiconductor chip having an electrode; a lead corresponding to the electrode; a metal line coupling the electrode to the lead; a first resin portion covering a coupling portion between the metal line and the electrode and a coupling portion between the metal line and the lead; and a second resin portion covering the metal line, the first resin portion, and the semiconductor chip.
摘要翻译： 半导体器件包括：具有电极的半导体芯片; 对应于电极的引线; 将电极耦合到引线的金属线; 覆盖金属线和电极之间的耦合部分的第一树脂部分和金属线与引线之间的耦合部分; 以及覆盖金属线，第一树脂部分和半导体芯片的第二树脂部分。
-
6.发明授权公开(公告)号：US08674520B2
公开(公告)日：2014-03-18
申请号：US13355805
申请日：2012-01-23
IPC分类号： H01L29/40
CPC分类号： H01L23/49513 , H01L23/3107 , H01L23/49562 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/29 , H01L2224/29076 , H01L2224/29101 , H01L2224/29111 , H01L2224/29147 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/4903 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/83101 , H01L2224/92247 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10329 , H01L2924/13064 , H01L2924/15738 , H01L2924/15747 , H01L2924/15763 , H01L2924/181 , H01L2924/00 , H01L2924/01022 , H01L2924/01028 , H01L2924/01046 , H01L2924/00012 , H01L2924/00014 , H01L2924/3512
摘要： A method for manufacturing a semiconductor device includes placing a sheet containing a fibrous material having at least one outer surface having a metal on a semiconductor chip-mounting region of a substrate; forming a bonding layer containing a fusible metal on the semiconductor chip-mounting region; placing a semiconductor chip on the semiconductor chip-mounting region; and bonding the semiconductor chip to the semiconductor chip-mounting region with the fusible metal-containing bonding layer by heating.
摘要翻译： 一种半导体器件的制造方法，其特征在于，在衬底的半导体芯片安装区域上放置含有具有至少一个具有金属的外表面的纤维材料的片材; 在半导体芯片安装区域上形成含有可熔金属的接合层; 将半导体芯片放置在半导体芯片安装区域上; 并且通过加热将半导体芯片与可熔融金属键合层接合到半导体芯片安装区域。
-
7.发明申请公开(公告)号：US20120211899A1
公开(公告)日：2012-08-23
申请号：US13355805
申请日：2012-01-23
CPC分类号： H01L23/49513 , H01L23/3107 , H01L23/49562 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/29 , H01L2224/29076 , H01L2224/29101 , H01L2224/29111 , H01L2224/29147 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/4903 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/83101 , H01L2224/92247 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10329 , H01L2924/13064 , H01L2924/15738 , H01L2924/15747 , H01L2924/15763 , H01L2924/181 , H01L2924/00 , H01L2924/01022 , H01L2924/01028 , H01L2924/01046 , H01L2924/00012 , H01L2924/00014 , H01L2924/3512
摘要： A method for manufacturing a semiconductor device includes placing a sheet containing a fibrous material having at least one outer surface having a metal on a semiconductor chip-mounting region of a substrate; forming a bonding layer containing a fusible metal on the semiconductor chip-mounting region; placing a semiconductor chip on the semiconductor chip-mounting region; and bonding the semiconductor chip to the semiconductor chip-mounting region with the fusible metal-containing bonding layer by heating.
摘要翻译： 一种半导体器件的制造方法，其特征在于，在衬底的半导体芯片安装区域上放置含有具有至少一个具有金属的外表面的纤维材料的片材; 在半导体芯片安装区域上形成含有可熔金属的接合层; 将半导体芯片放置在半导体芯片安装区域上; 并且通过加热将半导体芯片与可熔融金属键合层接合到半导体芯片安装区域。
-
公开(公告)号：US20060175084A1
公开(公告)日：2006-08-10
申请号：US11138467
申请日：2005-05-27
申请人： Keishiro Okamoto , Tomoyuki Abe , Motoaki Tani , Nobuyuki Hayashi
发明人： Keishiro Okamoto , Tomoyuki Abe , Motoaki Tani , Nobuyuki Hayashi
CPC分类号： H05K3/445 , H05K1/056 , H05K3/426 , H05K2201/0179 , H05K2201/0195 , H05K2201/0323 , H05K2201/09581 , H05K2203/135 , Y10T29/49117 , Y10T29/49155 , Y10T29/49165
摘要： The wiring board comprises a plate-shaped conductive core material 10 with a through-hole 12 formed in, an insulation layer 14 formed on the surface of the conductive core material 10 and on the inside wall of the through-hole 12, a resin 18 buried in the through-hole 12 with the insulation layer 14 formed in, wirings 22a, 22b formed on the upper surface and the undersurface of the conductive core material 10 with the insulation layer 14 formed on, and an wiring 22d formed in the through-hole 20 formed in the resin 18 and electrically connected to the wirings 22a, 22b.
摘要翻译： 布线板包括具有形成在其中的通孔12的板状导电芯材10，形成在导电芯材10的表面上的绝缘层14和通孔12的内壁上的树脂18 埋置在通孔12中，其中形成有绝缘层14，形成在形成有绝缘层14的导电芯材10的上表面和下表面上的布线22a，22b以及形成在其中的布线22d 通孔20形成在树脂18中并电连接到布线22a，22b。
-
公开(公告)号：US07557014B2
公开(公告)日：2009-07-07
申请号：US11600211
申请日：2006-11-16
申请人： Keishiro Okamoto , Takeshi Shioga , Osamu Taniguchi , Koji Omote , Yoshihiko Imanaka , Yasuo Yamagishi
发明人： Keishiro Okamoto , Takeshi Shioga , Osamu Taniguchi , Koji Omote , Yoshihiko Imanaka , Yasuo Yamagishi
IPC分类号： H01L21/00 , H01L21/20 , H01L21/4763
CPC分类号： H01L23/49816 , H01L21/4846 , H01L23/49822 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/16235 , H01L2924/01019 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15192 , H01L2924/3011
摘要： A semiconductor apparatus comprises a support substrate having through holes filles with conductor adapted to a first pitch; a capacitor formed on or above said support substrate; a wiring layer formed on or above said support substrate, leading some of said through holes filles with conductor upwards through said capacitor, having branches, and having wires of a second pitch different from said first pitch; and plural semiconductor elements disposed on or above said wiring layer, having terminals adapted to the second pitch, and connected with said wiring layer via said terminals. A semiconductor apparatus, in which semiconductor elements having a narrow terminal pitch, a support having through wires at a wider pitch, and a capacitor are suitably electrically connected to realize the decoupling function with reduced inductance and large capacitance.
摘要翻译： 一种半导体装置，包括：支撑基板，其具有填充有适于第一间距的导体的通孔; 形成在所述支撑基板上或上方的电容器; 形成在所述支撑基板上或上方的布线层，使一些所述通孔向上填充有通过所述电容器的导体，具有分支，并且具有不同于所述第一间距的第二间距的导线; 以及设置在所述布线层上或上方的多个半导体元件，具有适于所述第二间距的端子，并且经由所述端子与所述布线层连接。 其中具有窄端子间距的半导体元件，具有较宽节距的导线的支撑件和电容器的半导体装置被适当地电连接以实现具有减小的电感和大电容的去耦功能。
-
公开(公告)号：US20070077391A1
公开(公告)日：2007-04-05
申请号：US11339511
申请日：2006-01-26
申请人： Keishiro Okamoto , Mamoru Kurashina , Tomoyuki Abe
发明人： Keishiro Okamoto , Mamoru Kurashina , Tomoyuki Abe
CPC分类号： B32B5/26 , B32B3/02 , B32B5/024 , B32B7/02 , B32B27/08 , B32B27/12 , B32B27/281 , B32B2250/05 , B32B2255/10 , B32B2255/205 , B32B2260/021 , B32B2260/046 , B32B2262/101 , B32B2262/106 , B32B2307/308 , B32B2307/734 , B32B2457/00 , H01L2924/0002 , H05K1/036 , H05K1/0366 , H05K3/429 , H05K3/4641 , H05K2201/0323 , H05K2201/068 , Y10T428/24149 , Y10T428/24942 , Y10T428/249923 , Y10T428/24994 , Y10T428/249945 , Y10T442/643 , Y10T442/659 , Y10T442/668 , Y10T442/696 , Y10T442/697 , H01L2924/00
摘要： A stack of 50 layers of a first pitch-base carbon fiber sheet is formed, two sets of stack each having two second pitch-base carbon fiber sheets stacked therein are fabricated. At this time, the second carbon fiber sheets have a thermal expansion coefficient larger than that of the first carbon fiber sheet. Next, the stack of the first carbon fiber sheet is then held between two sets of stack of the second carbon fiber sheets. The stack of the first and second carbon fiber sheets are then impregnated with an epoxy-base resin composition and the resin is solidified. As a result a prepreg composed of the first and second carbon fiber sheets and the resin component composed of the epoxy-base resin composition is obtained. Thereafter, interconnections and the like are then formed on the prepreg, to thereby complete a multilevel interconnection board.
摘要翻译： 形成50层第一沥青基碳纤维片的叠层，制成两组堆叠在其中的两个第二沥青基碳纤维片。 此时，第二碳纤维片的热膨胀系数大于第一碳纤维片的热膨胀系数。 接下来，将第一碳纤维片的叠层保持在两组第二碳纤维片之间。 然后将第一和第二碳纤维片材的叠层用环氧树脂基树脂组合物浸渍，并使树脂固化。 结果得到由第一和第二碳纤维片材构成的预浸料和由环氧基树脂组合物构成的树脂组分。 此后，在预浸料坯上形成互连等，从而完成多层互连板。
-
-
-
-
-
-
-
-
-
搜索结果
23 条记录 (耗时 0.022 秒)
