公开(公告)号：US5181218A

公开(公告)日：1993-01-19

申请号：US619606

申请日：1990-11-29

申请人： Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Kazuhiko Itaya ,  Yukio Watanabe ,  Mariko Suzuki ,  Genichi Hatakoshi

发明人： Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Kazuhiko Itaya ,  Yukio Watanabe ,  Mariko Suzuki ,  Genichi Hatakoshi

IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/162 ,  H01S5/168 ,  H01S5/2231 ,  H01S5/3206 ,  H01S5/32325

摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

摘要翻译： InGaAlP NAM结构激光器形成有设置在n型GaAs衬底上的双异质结构部分。 双异质结构部分包括n型InGaAlP的第一包层，未掺杂的InGaP有源层和p型InGaAlP的第二包层。 通过MOCVD晶体生长，在第二覆层上依次形成具有条形开口和p型GaAs接触层的n型GaAs电流阻挡层。 在位于条形开口正下方的活性层的中心区域中限定低能带隙区域。 在活性层的与激光的光输出端部对应的周边区域中限定高能带隙区域，位于电流阻挡层的正下方。 因此，可以减少或防止在输出端部处的振荡的激光束的自吸收。

公开(公告)号：US4987096A

公开(公告)日：1991-01-22

申请号：US450063

申请日：1989-12-13

申请人： Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Kazuhiko Itaya ,  Yukio Watanabe ,  Mariko Suzuki ,  Genichi Hatakoshi

发明人： Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Kazuhiko Itaya ,  Yukio Watanabe ,  Mariko Suzuki ,  Genichi Hatakoshi

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/162 ,  H01S5/168 ,  H01S5/2231 ,  H01S5/3206 ,  H01S5/32325 ,  Y10S148/025 ,  Y10S148/095

摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

公开(公告)号：US4893313A

公开(公告)日：1990-01-09

申请号：US323400

申请日：1989-03-14

申请人： Genichi Hatakoshi ,  Kazuhiko Itaya ,  Shigeya Naritsuka ,  Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Yukio Watanabe ,  Yasuo Ohba ,  Yoshihiro Kokubun ,  Yutaka Uematsu

发明人： Genichi Hatakoshi ,  Kazuhiko Itaya ,  Shigeya Naritsuka ,  Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Yukio Watanabe ,  Yasuo Ohba ,  Yoshihiro Kokubun ,  Yutaka Uematsu

IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/32325 ,  H01S5/2004 ,  H01S5/2231 ,  H01S5/3211

摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

公开(公告)号：US5036521A

公开(公告)日：1991-07-30

申请号：US439428

申请日：1989-11-21

申请人： Genichi Hatakoshi ,  Kazuhiko Itaya ,  Shigeya Naritsuka ,  Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Yukio Watanabe ,  Yasuo Ohba ,  Yoshihiro Kokubun ,  Yutaka Uematsu

发明人： Genichi Hatakoshi ,  Kazuhiko Itaya ,  Shigeya Naritsuka ,  Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Yukio Watanabe ,  Yasuo Ohba ,  Yoshihiro Kokubun ,  Yutaka Uematsu

IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/32325 ,  H01S5/2004 ,  H01S5/2231 ,  H01S5/3211

摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

公开(公告)号：US5023880A

公开(公告)日：1991-06-11

申请号：US478961

申请日：1990-02-12

申请人： Mariko Suzuki ,  Kazuhiko Itaya ,  Masayuki Ishikawa ,  Yukio Watanabe ,  Genichi Hatakoshi

发明人： Mariko Suzuki ,  Kazuhiko Itaya ,  Masayuki Ishikawa ,  Yukio Watanabe ,  Genichi Hatakoshi

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/32325 ,  H01S5/2231 ,  H01S5/0421 ,  H01S5/209 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/321

摘要： A semiconductor laser device including a semiconductor substrate of a first conductivity type, a double hetero structure, including of a lower cladding layer of the first conductivity type, an active layer, and a first upper cladding layer of In.sub.1-w (Ga.sub.1-y Al.sub.y)wp of the second conductivity type formed on the semiconductor substrate, a second upper cladding layer of In.sub.1-w (Ga.sub.1-w Al.sub.z).sub.w P of the second conductivity type partially formed on the first upper cladding layer, a first contact layer of In.sub.1-w (Ga.sub.1-s Al.sub.s).sub.w P (0

公开(公告)号：US5153889A

公开(公告)日：1992-10-06

申请号：US747128

申请日：1991-08-19

申请人： Hideto Sugawara ,  Masayuki Ishikawa ,  Yoshihiro Kokubun ,  Yukie Nishikawa ,  Shigeya Naritsuka ,  Kazuhiko Itaya ,  Genichi Hatakoshi ,  Mariko Suzuki

发明人： Hideto Sugawara ,  Masayuki Ishikawa ,  Yoshihiro Kokubun ,  Yukie Nishikawa ,  Shigeya Naritsuka ,  Kazuhiko Itaya ,  Genichi Hatakoshi ,  Mariko Suzuki

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01L33/145 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30

摘要： Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5.times.10.sup.17 cm.sup.-3 to 5.times.10.sup.18 cm.sup.-3.

摘要翻译： 公开了一种半导体发光器件，包括半导体衬底，形成在衬底的前表面上并由InGaAlP有源层组成的双异质结构部分和其间夹有有源层的下和上和外包层，形成的第一电极 在双异质结构部分的表面的一部分中，以及形成在基板的背面上的第二电极。 由GaAlAs形成的电流扩散层介于双异质结构部分和第一电极之间，所述电流扩散层的厚度为5至30微米，载流子浓度为5×10 17 cm -3至5×10 18 cm -3。

公开(公告)号：US5321712A

公开(公告)日：1994-06-14

申请号：US10844

申请日：1993-01-29

申请人： Kazuhiko Itaya ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Hideto Sugawara ,  Mariko Suzuki

发明人： Kazuhiko Itaya ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Hideto Sugawara ,  Mariko Suzuki

IPC分类号： H01L33/12 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00 ,  H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01L33/30 ,  H01S5/32308 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/3086 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/32325

摘要： A semiconductor light-emitting element includes a semiconductor substrate of a first conductivity type, a lower cladding layer formed on the semiconductor substrate and constituted by an InGaAlP-based compound of the first conductivity type, an active layer formed on the lower cladding layer, and constituted by a material selected from the group consisting of GaAs, GaAlAs, and InGaAs, and an upper cladding layer formed on the active layer, and constituted by the InGaAlP-based compound of a second conductivity type, wherein the InGaAlP-based compound is represented by a formula In.sub.y (Ga.sub.1-x Al.sub.x).sub.y P, where x is in the range of 0.3 to 0.7 and y is in the range of 0.45 to 0.55.

摘要翻译： 半导体发光元件包括第一导电类型的半导体衬底，形成在半导体衬底上并由第一导电类型的InGaAlP基化合物构成的下包层，形成在下敷层上的有源层，以及 由选自GaAs，GaAlAs和InGaAs的材料构成，以及形成在有源层上的上覆层，由第二导电类型的InGaAlP基化合物构成，其中以InGaAlP为基础的化合物被表示 通过式Iny（Ga1-xAlx）yP，其中x在0.3至0.7的范围内，y在0.45至0.55的范围内。

公开(公告)号：US5780873A

公开(公告)日：1998-07-14

申请号：US689689

申请日：1996-08-13

申请人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

发明人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01L33/00 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0215 ,  H01S5/34333 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3202 ,  H01S5/32391 ,  H01S5/34326 ,  H01S5/4043 ,  H01S5/4087

摘要： A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.

摘要翻译： 半导体发光器件包括六边形的半导体发光器件部分; 以及组合到半导体发光器件中的立方体的导电半导体衬底，并且其解理面的取向符合形成半导体发光器件部分的半导体层之一的解理面的取向。 立方体的基板被切割，使得六方型的半导体发光器件部分被诱导被切割，并且可以容易地形成镜面。

公开(公告)号：US5138404A

公开(公告)日：1992-08-11

申请号：US708806

申请日：1991-05-31

申请人： Masayuki Ishikawa ,  Kazuhiko Itaya ,  Genichi Hatakoshi

发明人： Masayuki Ishikawa ,  Kazuhiko Itaya ,  Genichi Hatakoshi

IPC分类号： H01S5/00 ,  H01L29/45 ,  H01S5/042 ,  H01S5/223 ,  H01S5/323

CPC分类号： H01L33/30 ,  H01L29/452 ,  H01L33/0062 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/32325

摘要： A semiconductor device for passing electric current between a GaAs semiconductor layer (103) and an InGaAlP semiconductor layer (101) both having the same conductivity type. The device includes a higher carrier density region (102) with the carrier density equal to or more than 5.times.10.sup.17 cm.sup.-3 and thickness in a rannge from 400 .ANG. to 800 .ANG. in at least a part of the InGaAlP layer (101) adjoining the GaAs layer (103). As a result, good ohmic contact is achieved and the semiconductor device has a lower operating voltage and a satisfactory thermal characteristic.

摘要翻译： 一种用于在GaAs半导体层（103）和具有相同导电类型的InGaAlP半导体层（101）之间传导电流的半导体器件。 该器件包括载流子密度等于或大于5×10 17 cm -3的较高载流子密度区域（102），并且在邻接GaAs的至少一部分InGaAlP层（101）中，从400到800的范围内的厚度 层（103）。 结果，实现良好的欧姆接触，并且半导体器件具有较低的工作电压和令人满意的热特性。

公开(公告)号：US06252894B1

公开(公告)日：2001-06-26

申请号：US09263213

申请日：1999-03-05

申请人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

发明人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/205 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/2231 ,  H01S2301/18

摘要： A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer.

摘要翻译： 半导体激光器由氮化镓系化合物半导体形成，具有包含保持在p型和n型AlGaN覆盖层之间的MQW（多量子阱）有源层的双异质结构。 双异质结构保持在p型和n型接触层之间。 在至少一个接触层和InAlGaN光学引导模式控制中形成具有大于具有与接触层相同的导电类型并且与接触层相邻的覆盖层的光吸收系数的InGaN光吸收层 在光吸收层的外部形成折射率小于包层的层（小折射率层）。