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公开(公告)号:US20180013058A1
公开(公告)日:2018-01-11
申请号:US15640923
申请日:2017-07-03
申请人: ROHM CO., LTD.
CPC分类号: H01L43/06 , G01R33/0047 , G01R33/0052 , G01R33/07 , G01R33/09 , H01B1/02 , H01L43/04 , H01L43/065 , H01L43/12 , H01L43/14
摘要: A magnetoelectric converting element includes a substrate, a magnetosensitive layer, a first insulating layer, an underlying conductive layer, a second insulating layer, and a terminal conductor. The magnetosensitive layer is formed on the substrate. The first insulating layer is formed with first opening for exposing a part of the magnetosensitive layer. The underlying conductive layer is formed on the exposed part of the magnetosensitive layer. The second insulating layer is formed with a second opening for exposing a part of the underlying conductive layer. The terminal conductor is formed on the exposed part of the underlying conductive layer. The second opening is arranged to be located inside the first opening in plan view.
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公开(公告)号:US20160148919A1
公开(公告)日:2016-05-26
申请号:US14943103
申请日:2015-11-17
申请人: ROHM CO., LTD.
发明人: Isamu NISHIMURA
IPC分类号: H01L25/18 , H01L23/48 , H01L25/065 , H01L23/552 , H01L23/66 , H01L23/528 , H01L23/31
CPC分类号: H01L25/18 , H01L23/13 , H01L23/147 , H01L23/24 , H01L23/3135 , H01L23/49811 , H01L23/552 , H01L23/66 , H01L25/0657 , H01L2224/16225 , H01L2924/0002 , H01L2924/15156 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要: A semiconductor device includes a semiconductor substrate, a conducting portion, and a sealing resin. The substrate has a main surface and is formed with a recessed portion in the main surface. The conducting portion is formed on the substrate. The sealing resin is disposed in the recessed portion. The conducting portion includes a first wiring layer and a second wiring layer both formed in the recessed portion. The second wiring layer is closer to the main surface than is the first wiring layer in the normal direction of the main surface.
摘要翻译: 半导体器件包括半导体衬底,导电部分和密封树脂。 基板具有主表面并且在主表面中形成有凹部。 导电部分形成在基板上。 密封树脂设置在凹部中。 导电部分包括形成在凹部中的第一布线层和第二布线层。 第二布线层比主表面的法线方向上的第一布线层更靠近主表面。
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公开(公告)号:US20240021717A1
公开(公告)日:2024-01-18
申请号:US18220277
申请日:2023-07-11
申请人: ROHM CO., LTD.
发明人: Isamu NISHIMURA
IPC分类号: H01L29/778 , H01L29/20 , H01L29/40 , H01L29/10 , H01L29/66
CPC分类号: H01L29/7786 , H01L29/2003 , H01L29/402 , H01L29/1066 , H01L29/66462
摘要: A nitride semiconductor device includes an electron transit layer, formed above a substrate, and an electron supply layer formed on the electron transit layer and having a larger band gap than the electron transit layer. A gate layer is formed on the electron supply layer and contains an acceptor impurity. A gate electrode is formed on the gate layer. A source electrode and a drain electrode are located at opposite sides of the gate layer and contact the electron supply layer. The gate electrode has a greater length than the gate layer in a first direction in which the source electrode, the gate layer, and the drain electrode are arranged. The gate electrode contacts an entire upper surface of the gate layer and extends from the gate layer toward at least one of the source electrode and the drain electrode.
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公开(公告)号:US20240021592A1
公开(公告)日:2024-01-18
申请号:US18466207
申请日:2023-09-13
申请人: ROHM CO., LTD.
发明人: Isamu NISHIMURA , Mamoru YAMAGAMI
CPC分类号: H01L25/16 , H01L24/16 , H01L23/3121 , H01L23/5384 , H01L23/5386 , H01L23/5389 , H01L21/4853 , H01L21/486 , H01L21/565 , H01L28/10 , H01L24/13 , H01L2224/16227 , H01L2924/19104 , H01L2924/19042 , H01L2224/13083 , H01L2224/13155 , H01L2224/13164 , H01L2224/13144 , H01L2224/13111
摘要: A semiconductor device includes a substrate having a main surface, a plurality of first wirings, each having a first embedded part embedded in the substrate and exposed from the main surface, and a mounted part which is in contact with the main surface and is connected to the first embedded part, a semiconductor element having an element rear surface and a plurality of electrodes bonded to the mounted parts, a plurality of second wirings, each having a second embedded part embedded in the substrate and exposed from the main surface and a columnar part protruding from the second embedded part in the thickness direction, and being located outward from the semiconductor element as viewed in the thickness direction; and a passive element located on the side facing the main surface in the thickness direction more than the semiconductor element, and electrically connected to the plurality of second wirings.
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公开(公告)号:US20200266172A1
公开(公告)日:2020-08-20
申请号:US16703037
申请日:2019-12-04
申请人: ROHM CO., LTD.
发明人: Isamu NISHIMURA
IPC分类号: H01L23/00 , H01L23/14 , H01L23/29 , H01L21/768 , H01L21/02
摘要: A semiconductor device, includes: a semiconductor element including an element main surface and an element back surface facing opposite sides in a thickness direction; a wiring part electrically connected to the semiconductor element; an electrode pad electrically connected to the wiring part; a sealing resin configured to cover a part of the semiconductor element; and a first metal layer configured to make contact with the element back surface and exposed from the sealing resin, wherein the semiconductor element overlaps the first metal layer when viewed in the thickness direction.
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公开(公告)号:US20180331008A1
公开(公告)日:2018-11-15
申请号:US15970525
申请日:2018-05-03
申请人: ROHM CO., LTD.
发明人: Isamu NISHIMURA
IPC分类号: H01L23/34 , H01L23/10 , H01L23/49 , H01L23/485 , H01L23/28
CPC分类号: H01L23/34 , H01L23/10 , H01L23/28 , H01L23/3121 , H01L23/4855 , H01L23/49 , H01L33/58 , H01L33/62 , H01L33/64 , H01L2224/16
摘要: The present disclosure provides a semiconductor device for high efficiently releasing heat generated from a semiconductor element to the outside. The semiconductor device of the present disclosure includes a substrate, made of an intrinsic semiconductor material, having a substrate main surface facing toward a thickness direction z, and configured to have a recess recessed from the substrate main surface; an internal wiring layer, disposed on the substrate main surface and the recess; a columnar conductor, protruding from the internal wiring layer disposed on the substrate main surface toward a direction in which the substrate main surface faces; a semiconductor element, having an element main surface facing the same direction as the substrate main surface, and electrically connected to the internal wiring layer; and a sealing resin, filled into the recess and covering a portion of each of the columnar conductor and the semiconductor element; wherein the semiconductor element has a portion overlapping the recess when viewed in the thickness direction of the substrate, and the semiconductor device is configured to have a heat dissipating layer being in contact with the element main surface and exposed to the outside.
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公开(公告)号:US20170182794A1
公开(公告)日:2017-06-29
申请号:US15386884
申请日:2016-12-21
申请人: ROHM CO., LTD.
发明人: Isamu NISHIMURA , Yasuhiro FUWA
CPC分类号: B41J2/33595 , B41J2/3351 , B41J2/33515 , B41J2/33525 , B41J2/3353 , B41J2/33535 , B41J2/3354 , B41J2/33545 , B41J2/3355 , B41J2/3357 , B41J2/34
摘要: A thermal print head includes a semiconductor substrate, a resistor layer and a wiring layer. The resistor layer is formed on the semiconductor substrate and has a plurality of heat generating portions arranged in the main scanning direction. The wiring layer is formed on the semiconductor substrate to be included in a conduction path for energizing the plurality of heat generating portions. The conduction path includes a path or paths provided by the semiconductor substrate itself.
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公开(公告)号:US20240112992A1
公开(公告)日:2024-04-04
申请号:US18538641
申请日:2023-12-13
申请人: ROHM CO., LTD.
发明人: Isamu NISHIMURA
IPC分类号: H01L23/495 , H01L23/00 , H01L23/31 , H01L25/065
CPC分类号: H01L23/49531 , H01L23/3107 , H01L23/4952 , H01L23/49589 , H01L24/16 , H01L24/48 , H01L25/0652 , H01L2224/16146 , H01L2224/16225 , H01L2224/48137 , H01L2224/48227 , H01L2924/014 , H01L2924/0665 , H01L2924/13091 , H01L2924/182
摘要: A semiconductor device includes a first resin layer having a first obverse surface facing in a thickness direction, a first wiring layer facing the first obverse surface, a semiconductor layer, and a semiconductor element. The semiconductor element includes an electrode electrically connected to the semiconductor layer and facing the first obverse surface and is electrically bonded at the electrode to the first wiring layer. The semiconductor device further includes a second resin layer having a second obverse surface facing the same side as the first obverse surface in the thickness direction, and a second wiring layer facing the second obverse surface and electrically connected to the semiconductor layer. The second wiring layer is in contact with the semiconductor layer. The second wiring layer extends across an outer edge of the semiconductor layer as viewed in the thickness direction.
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公开(公告)号:US20220270988A1
公开(公告)日:2022-08-25
申请号:US17679539
申请日:2022-02-24
申请人: ROHM Co., LTD.
发明人: Isamu NISHIMURA
摘要: Provided is an electronic part that includes a first substrate including a first base and a first coil, the first coil being electrically insulated from the first base, a second substrate including a second base and a second coil, the second coil being electrically insulated from the second base, and a support member that supports the first substrate and the second substrate. The first substrate is arranged between the second substrate and the support member in a thickness direction of the support member and overlaps the second substrate as viewed in the thickness direction, the first base is positioned between the first coil and the second coil in the thickness direction, and the first coil and the second coil are magnetically coupled.
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公开(公告)号:US20190214555A1
公开(公告)日:2019-07-11
申请号:US16208544
申请日:2018-12-03
申请人: ROHM CO., LTD.
发明人: Isamu NISHIMURA , Hirofumi TAKEDA
CPC分类号: H01L43/14 , H01L43/04 , H01L43/065
摘要: A semiconductor device includes a substrate having a front surface and a mounting surface that are separate from each other in a thickness direction. The substrate is formed with a through-hole that penetrates through in the thickness direction. A semiconductor element is mounted on the front surface of the substrate, and a front-surface wire line is formed on the front surface of the substrate to be electrically connected to the semiconductor element. A column is provided inside the through-hole, and is electrically connected to the front-surface wiring line. An electrode pad is provided on the mounting surface of the substrate, and is electrically connected to the column. A resin-layer through portion is also provided inside the through-hole. The semiconductor element is covered with a sealing resin. The resin-layer through portion has an orthogonal surface in contact with the column. The orthogonal surface is orthogonal to the mounting surface.
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