公开(公告)号：US08173517B2

公开(公告)日：2012-05-08

申请号：US12828868

申请日：2010-07-01

申请人： Fernando Gonzalez ,  David L. Chapek ,  Randhir P. S. Thakur

发明人： Fernando Gonzalez ,  David L. Chapek ,  Randhir P. S. Thakur

IPC分类号： H01L21/764 ,  H01L29/00

CPC分类号： H01L21/76237

摘要： The present invention relates to methods for forming microelectronic structures in a semiconductor substrate. The method includes selectively removing dielectric material to expose a portion of an oxide overlying a semiconductor substrate. Insulating material may be formed substantially conformably over the oxide and remaining portions of the dielectric material. Spacers may be formed from the insulating material. An isolation trench etch follows the spacer etch. An optional thermal oxidation of the surfaces in the isolation trench may be performed, which may optionally be followed by doping of the bottom of the isolation trench to further isolate neighboring active regions on either side of the isolation trench. A conformal material may be formed substantially conformably over the spacer, over the remaining portions of the dielectric material, and substantially filling the isolation trench. Planarization of the conformal material may follow.

摘要翻译： 本发明涉及在半导体衬底中形成微电子结构的方法。 该方法包括选择性地去除介电材料以暴露覆盖半导体衬底的氧化物的一部分。 绝缘材料可以基本上顺应地形成在电介质材料的氧化物和剩余部分上。 间隔物可以由绝缘材料形成。 隔离沟蚀刻遵循间隔物蚀刻。 可以执行隔离沟槽中的表面的可选热氧化，其可以任选地随后掺杂隔离沟槽的底部以进一步隔离隔离沟槽的任一侧上的相邻有源区。 可以在绝缘材料的剩余部分上基本上顺应地在间隔物上形成共形材料，并且基本上填充隔离沟槽。 保形材料的平面化可能遵循。

公开(公告)号：US06271152B1

公开(公告)日：2001-08-07

申请号：US09571788

申请日：2000-05-16

申请人： Randhir P. S. Thakur ,  David L. Chapek

发明人： Randhir P. S. Thakur ,  David L. Chapek

IPC分类号： H01L2131

CPC分类号： H01L21/02255 ,  H01L21/02238 ,  H01L21/31662 ,  H01L21/76202

摘要： Field oxide is formed using high pressure. Oxidation of field regions between active regions is accomplished in a two-step process. A first oxide layer is formed in the field region. Then, a second oxide layer is formed on the first oxide layer. The second oxide layer is formed at a pressure of at least approximately 5 atmospheres. In one embodiment, the first oxide layer is formed at atmospheric pressure using a conventional oxidation technique, such as rapid thermal oxidation (RTO), wet oxidation, or dry oxidation. In another embodiment, the first oxide layer is formed, at a pressure of approximately 1 to 5 atmospheres. Wet or dry oxidation is used for the oxidizing ambient. The first oxide layer is formed to a thickness of approximately 500 angstroms or less, and typically greater than 200 angstroms. Temperatures of approximately 600 to 1,100 degrees Celsius are used for the oxidation steps.

摘要翻译： 使用高压形成场氧化物。 活性区域之间的场区氧化是以两步法进行的。 在场区域中形成第一氧化物层。 然后，在第一氧化物层上形成第二氧化物层。 第二氧化物层在至少约5个大气压的压力下形成。 在一个实施方案中，使用常规氧化技术，例如快速热氧化（RTO），湿氧化或干燥氧化，在大气压下形成第一氧化物层。 在另一个实施方案中，在约1至5个大气压的压力下形成第一氧化物层。 湿氧或干氧化用于氧化环境。 第一氧化物层形成为约500埃或更小，通常大于200埃的厚度。 氧化步骤使用约600至1100摄氏度的温度。

公开(公告)号：US6066576A

公开(公告)日：2000-05-23

申请号：US868562

申请日：1997-06-04

申请人： Randhir P. S. Thakur ,  David L. Chapek

发明人： Randhir P. S. Thakur ,  David L. Chapek

IPC分类号： H01L21/316 ,  H01L21/762 ,  H01L21/31

CPC分类号： H01L21/02255 ,  H01L21/02238 ,  H01L21/31662 ,  H01L21/76202

摘要： Field oxide is formed using high pressure. Oxidation of field regions between active regions is accomplished in a two-step process. A first oxide layer is formed in the field region. Then, a second oxide layer is formed on the first oxide layer. The second oxide layer is formed at a pressure of at least approximately 5 atmospheres. In one embodiment, the first oxide layer is formed at atmospheric pressure using a conventional oxidation technique, such as rapid thermal oxidation (RTO), wet oxidation, or dry oxidation. In another embodiment, the first oxide layer is formed at near atmospheric pressure, at a pressure of approximately 1 to 5 atmospheres. Wet or dry oxidation is used for the oxidizing ambient. The first oxide layer is formed to a thickness of approximately 500 angstroms or less, and typically greater than 200 angstroms. Temperatures of approximately 600 to 1,100 degrees Celsius are used for the oxidation steps.

摘要翻译： 使用高压形成场氧化物。 活性区域之间的场区氧化是以两步法进行的。 在场区域中形成第一氧化物层。 然后，在第一氧化物层上形成第二氧化物层。 第二氧化物层在至少约5个大气压的压力下形成。 在一个实施方案中，使用常规氧化技术，例如快速热氧化（RTO），湿氧化或干燥氧化，在大气压下形成第一氧化物层。 在另一个实施方案中，第一氧化物层在接近大气压下，在约1-5个大气压的压力下形成。 湿氧或干氧化用于氧化环境。 第一氧化物层形成为约500埃或更小，通常大于200埃的厚度。 氧化步骤使用约600至1100摄氏度的温度。

公开(公告)号：US5846888A

公开(公告)日：1998-12-08

申请号：US721838

申请日：1996-09-27

申请人： David L. Chapek ,  Randhir P. S. Thakur

发明人： David L. Chapek ,  Randhir P. S. Thakur

IPC分类号： H01L21/316

CPC分类号： H01L21/0223 ,  H01L21/02255 ,  H01L21/3165 ,  H01L21/31658

摘要： A desirable impurity, such as reactive gases and inert gases, is safely introduced into a substrate/oxide interface during high pressure thermal oxidation. Desirable impurities include chlorine, fluorine, bromine, iodine, astatine, nitrogen, nitrogen trifluoride, and ammonia. In one embodiment, the desirable impurity is introduced into a processing chamber prior to the high pressure oxidation step. Then, the temperature is brought to or maintained at an oxidation temperature. In another embodiment, the desirable impurity is introduced into the processing chamber after the high pressure oxidation step, while the temperature is still sufficiently high for oxidation. In yet another embodiment, the desirable impurity is introduced into the processing chamber both before and after the high pressure oxidation step.

摘要翻译： 在高压热氧化期间，将理想的杂质（例如反应气体和惰性气体）安全地引入衬底/氧化物界面。 理想的杂质包括氯，氟，溴，碘，ast，氮，三氟化氮和氨。 在一个实施方案中，在高压氧化步骤之前，将所需的杂质引入处理室。 然后，使温度达到或保持在氧化温度。 在另一个实施方案中，在高压氧化步骤之后将所需的杂质引入处理室中，同时温度仍然足够高以进行氧化。 在另一个实施方案中，在高压氧化步骤之前和之后将期望的杂质引入处理室。

公开(公告)号：US20110263068A1

公开(公告)日：2011-10-27

申请号：US13087823

申请日：2011-04-15

申请人： KAUSHAL K. SINGH ,  Robert Visser ,  Vijay Parihar ,  Randhir P. S. Thakur

发明人： KAUSHAL K. SINGH ,  Robert Visser ,  Vijay Parihar ,  Randhir P. S. Thakur

IPC分类号： H01L31/18

CPC分类号： H01L31/02366 ,  H01L31/055 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： Embodiments of the invention generally relate to solar cell devices and methods for manufacturing such solar cell devices. In one embodiment, a method for forming a solar cell device includes depositing a conversion layer over a first surface of a substrate, depositing a first transparent conductive oxide layer over a second surface of the substrate that is opposite the first surface, depositing a first p-doped silicon layer over the first transparent conductive oxide layer, depositing a first intrinsic silicon layer over the first p-doped silicon layer, and depositing a first n-doped silicon layer over the first intrinsic silicon layer. The method further includes depositing a second transparent conductive oxide layer over the first n-doped silicon layer, and depositing an electrically conductive contact layer over the second transparent conductive oxide layer.

摘要翻译： 本发明的实施例一般涉及用于制造这种太阳能电池装置的太阳能电池装置和方法。 在一个实施例中，一种用于形成太阳能电池器件的方法包括在衬底的第一表面上沉积转换层，在衬底的与第一表面相对的第二表面上沉积第一透明导电氧化物层，沉积第一p 在第一透明导电氧化物层之上的掺杂硅层，在第一p掺杂硅层上沉积第一本征硅层，以及在第一本征硅层上沉积第一n掺杂硅层。 该方法还包括在第一n掺杂硅层上沉积第二透明导电氧化物层，以及在第二透明导电氧化物层上沉积导电接触层。

公开(公告)号：US07232728B1

公开(公告)日：2007-06-19

申请号：US08593949

申请日：1996-01-30

申请人： Ruojia R. Lee ,  Randhir P. S. Thakur

发明人： Ruojia R. Lee ,  Randhir P. S. Thakur

IPC分类号： H01L21/336

CPC分类号： H01L29/66651 ,  H01L21/28167 ,  H01L21/28211

摘要： This invention improves the quality of gate oxide dielectric layers using a two-pronged approach, thus permitting the use of much thinner silicon dioxide gate dielectric layers required for lower-voltage, ultra-dense integrated circuits. In order to eliminate defects caused by imperfections in bulk silicon, an in-situ grown epitaxial layer is formed on active areas following a strip of the pad oxide layer used beneath the silicon nitride islands used for masking during the field oxidation process. By growing an epitaxial silicon layer prior to gate dielectric layer formation, defects in the bulk silicon substrate are covered over and, hence, isolated from the oxide growth step. In order to maintain the integrity of the selective epitaxial growth step, the wafers are maintained in a controlled, oxygen-free environment until the epitaxial growth step is accomplished. In order to eliminate defects caused by a native oxide layer, the wafers are maintained in a controlled, oxygen-free environment until being subjected to elevated temperature in a controlled, oxidizing environment. In one embodiment, the oxidizing environment comprises diatomic oxygen, while in another embodiment, the oxidizing environment comprises diatomic oxygen and ozone.

摘要翻译： 本发明使用双管齐下的方法提高了栅极氧化物电介质层的质量，从而允许使用更低的，超低密度集成电路所需的更薄的二氧化硅栅介质层。 为了消除体硅缺陷引起的缺陷，在场氧化工艺中用于掩蔽的氮化硅岛下方的氧化硅层之后的有源区上形成原位生长的外延层。 通过在栅极介电层形成之前生长外延硅层，将体硅衬底中的缺陷覆盖并因此从氧化物生长步骤中分离。 为了保持选择性外延生长步骤的完整性，将晶片保持在受控的无氧环境中，直到外延生长步骤完成。 为了消除由自然氧化物层引起的缺陷，将晶片保持在受控制的无氧环境中，直到在受控的氧化环境中经历升高的温度。 在一个实施方案中，氧化环境包括双原子氧，而在另一个实施方案中，氧化环境包括双原子氧和臭氧。

公开(公告)号：US07205600B2

公开(公告)日：2007-04-17

申请号：US10223805

申请日：2002-08-19

申请人： Vishnu K. Agarwal ,  F. Daniel Gealy ,  Kunal R. Parekh ,  Randhir P. S. Thakur

发明人： Vishnu K. Agarwal ,  F. Daniel Gealy ,  Kunal R. Parekh ,  Randhir P. S. Thakur

IPC分类号： H01L27/108 ,  H01L29/76

CPC分类号： H01L28/40 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76838 ,  H01L23/5222 ,  H01L28/57 ,  H01L28/84 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitor forming method can include forming an insulation layer over a substrate and forming a barrier layer to threshold voltage shift inducing material over the substrate. An opening can be formed at least into the insulation layer and a capacitor dielectric layer formed at least within the opening. Threshold voltage inducing material can be provided over the barrier layer but be retarded in movement into an electronic device comprised by the substrate. The dielectric layer can comprise a tantalum oxide and the barrier layer can include a silicon nitride. Providing threshold voltage shift inducing material can include oxide annealing dielectric layer such as with N2O. The barrier layer can be formed over the insulation layer, the insulation layer can be formed over the barrier layer, or the barrier layer can be formed over a first insulation layer with a second insulation layer formed over the barrier layer. Further, the barrier layer can be formed after forming the capacitor electrode or after forming the dielectric layer, for example, by using poor step coverage deposition methods.

摘要翻译： 电容器形成方法可以包括在衬底上形成绝缘层，并在衬底上形成阈值电压移动诱导材料的势垒层。 开口可以至少形成在绝缘层中，并且至少形成在开口内形成电容器电介质层。 阈值电压诱导材料可以设置在阻挡层之上，但是在运动中被延迟到由衬底包括的电子器件中。 电介质层可以包括氧化钽，并且阻挡层可以包括氮化硅。 提供阈值电压移动诱导材料可以包括氧化物退火介质层，例如N 2 O 2。 可以在绝缘层上形成阻挡层，可以在阻挡层上形成绝缘层，或者可以在第一绝缘层上形成阻挡层，在隔离层上形成第二绝缘层。 此外，阻挡层可以在形成电容器电极之后或在形成介电层之后形成，例如通过使用差的阶梯覆盖沉积方法。

公开(公告)号：US07175713B2

公开(公告)日：2007-02-13

申请号：US10352257

申请日：2003-01-27

申请人： Randhir P. S. Thakur ,  Alfred W. Mak ,  Ming Xi ,  Walter Benjamin Glenn ,  Ahmad A. Khan ,  Ayad A. Al-Shaikh ,  Avgerinos V. Gelatos ,  Salvador P. Umotoy

发明人： Randhir P. S. Thakur ,  Alfred W. Mak ,  Ming Xi ,  Walter Benjamin Glenn ,  Ahmad A. Khan ,  Ayad A. Al-Shaikh ,  Avgerinos V. Gelatos ,  Salvador P. Umotoy

IPC分类号： C23C16/00 ,  C23C16/503 ,  C23C16/505 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45582 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/6719

摘要： An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

摘要翻译： 一种用于在半导体衬底上循环沉积薄膜的装置，包括具有气体分配系统的处理室，该气体分配系统具有用于处理气体的独立路径，以及与将所述工艺气体计量到所述室的反应区域的阀的操作同步的排气系统。

公开(公告)号：US07034353B2

公开(公告)日：2006-04-25

申请号：US09965240

申请日：2001-09-26

申请人： Randhir P. S. Thakur ,  Garry A. Mercaldi ,  Michael Nuttall ,  Shenlin Chen ,  Er-Xuan Ping

发明人： Randhir P. S. Thakur ,  Garry A. Mercaldi ,  Michael Nuttall ,  Shenlin Chen ,  Er-Xuan Ping

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： G11C11/404 ,  G11C17/16 ,  H01L21/28568 ,  H01L21/76888 ,  H01L27/1085 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/60 ,  H01L28/82 ,  H01L28/84

摘要： Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.

公开(公告)号：US07009264B1

公开(公告)日：2006-03-07

申请号：US08902809

申请日：1997-07-30

申请人： Klaus Florian Schuegraf ,  Scott Jeffrey DeBoer ,  Randhir P. S. Thakur

发明人： Klaus Florian Schuegraf ,  Scott Jeffrey DeBoer ,  Randhir P. S. Thakur

IPC分类号： H01L29/76

CPC分类号： H01L29/6656 ,  H01L21/28247 ,  H01L21/31683 ,  H01L21/32 ,  Y10S257/90

摘要： A selective spacer to prevent metal oxide formation during polycide reoxidation of a feature such as an electrode and a method for forming the selective spacer are disclosed. A material such as a thin silicon nitride or an amorphous silicon film is selectively deposited on the electrode by limiting deposition time to a period less than an incubation time for the material on silicon dioxide near the electrode. The spacer is deposited only on the electrode and not on surrounding silicon dioxide. The spacer serves as a barrier for the electrode during subsequent oxidation to prevent metal oxide formation while allowing oxidation to take place over the silicon dioxide.

摘要翻译： 公开了一种用于防止诸如电极的特征（例如电极）的聚合物再氧化期间的金属氧化物形成的选择性间隔物和用于形成选择性间隔物的方法。 将诸如薄氮化硅或非晶硅膜的材料通过将沉积时间限制在电极附近的二氧化硅上的材料的温育时间以下来选择性地沉积在电极上。 间隔物仅沉积在电极上而不是沉积在周围的二氧化硅上。 间隔物在随后的氧化期间用作电极的屏障，以防止金属氧化物形成，同时允许氧化发生在二氧化硅上。