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    Method and apparatus for preventing edge deposition
    3.
    发明授权
    Method and apparatus for preventing edge deposition 有权
    防止边缘沉积的方法和装置

    公开(公告)号：US06375748B1

    公开(公告)日：2002-04-23

    申请号：US09387928

    申请日：1999-09-01

    申请人： Joseph Yudovsky ,  Tom Madar ,  Salvador Umotoy ,  Son Ngoc Trinh ,  Lawrence C. Lei ,  Anzhong (Andrew) Chang ,  Xiaoxiong (John) Yuan

    发明人： Joseph Yudovsky ,  Tom Madar ,  Salvador Umotoy ,  Son Ngoc Trinh ,  Lawrence C. Lei ,  Anzhong (Andrew) Chang ,  Xiaoxiong (John) Yuan

    IPC分类号： C23C1600

    CPC分类号： H01L21/68735 ,  H01L21/68785

    摘要： A substrate support having a removable edge ring, which is made of a material having a lower coefficient of thermal expansion (CTE), than that of the substrate support is provided. The edge ring and the substrate support are configured for pin and slot coupling. Specifically, either the edge ring, or the substrate support comprises a plurality of pins, and the other of the edge ring or the substrate support comprises a plurality of hollow regions or slots in which the pins may be inserted. The slots are at least as wide as a corresponding one of the plurality of pins and extend in the direction in which the substrate support expands and contracts during thermal cycling. Each of the slots extends a length which is sufficient to compensate for the difference between the CTE of the substrate support and the CTE of the edge ring, over the range of process temperatures to which the apparatus is exposed. Preferably the susceptor is made of aluminum, and the edge ring is made of ceramic. A restrictor gap may be defined between a surface of the substrate support and a surface of the purge ring so as to restrict a volume of purge gas flowing to an edge of a substrate positioned on the substrate support. The purge gas delivery channel may have an exposed outlet and may be upwardly angled to facilitate cleaning.

    摘要翻译： 提供了一种具有可移除的边缘环的衬底支撑件，其由具有比衬底支撑件的热膨胀系数（CTE）低的材料制成。 边缘环和基板支撑件配置为销和槽联接。 具体来说，边缘环或衬底支撑件包括多个销，并且边缘环或衬底支撑件中的另一个包括可以插入销的多个中空区域或狭槽。 所述槽至少与所述多个销中相应的销一样宽，并且在所述基板支撑件在热循环期间膨胀和收缩的方向上延伸。 每个狭槽的长度足以补偿基板支撑件的CTE与边缘环的CTE之间的差异，在该设备暴露于该处理温度的范围内。 优选地，基座由铝制成，并且边缘环由陶瓷制成。 限定器间隙可以限定在衬底支撑件的表面和净化环的表面之间，以便限制流过位于衬底支撑件上的衬底的边缘的吹扫气体的体积。 净化气体输送通道可以具有暴露的出口并且可以向上成角度以便于清洁。

    Substrate support having brazed plates and resistance heater
    5.
    发明申请
    Substrate support having brazed plates and resistance heater 有权
    具有钎焊板和电阻加热器的基板支撑

    公开(公告)号：US20070040265A1

    公开(公告)日：2007-02-22

    申请号：US11506460

    申请日：2006-08-17

    申请人： Salvador Umotoy ,  Lawrence Lei ,  Gwo-Chuan Tzu ,  Xiaoxiong Yuan ,  Michael Jackson ,  Hymam Lam

    发明人： Salvador Umotoy ,  Lawrence Lei ,  Gwo-Chuan Tzu ,  Xiaoxiong Yuan ,  Michael Jackson ,  Hymam Lam

    IPC分类号： H01L23/12

    CPC分类号： H01L21/67103 ,  C23C16/45521 ,  C23C16/4586 ,  C23C16/466 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785

    摘要： A substrate support comprises top, middle and bottom plates which are brazed together. The top plate has a top surface with a plurality of outwardly projecting mesas dispersed across a recessed pocket, a network of recessed grooves, a vacuum port terminating in the recessed grooves, and plurality of gas ports. The middle plate has a plurality of middle feedthroughs aligned to corresponding top feedthroughs of the top plate, and the bottom plate has a plurality of bottom feedthroughs aligned to the middle feedthroughs of the middle plate. The top and middle plates are joined by a first brazed bond layer and the middle and bottom plates are joined by a second brazed bond layer.

    摘要翻译： 衬底支撑件包括钎焊在一起的顶板，中板和底板。 顶板具有顶表面，多个向外突出的台面分散在凹槽中，凹槽网络，终止于凹槽中的真空端口以及多个气体端口。 中间板具有与顶板的相应的顶部馈通对准的多个中间馈通，并且底板具有与中间板的中间馈通对准的多个底部馈通。 顶板和中间板通过第一钎焊接合层连接，中间和底板通过第二钎焊接合层连接。

    Dual gas faceplate for a showerhead in a semiconductor wafer processing system
    6.
    发明申请
    Dual gas faceplate for a showerhead in a semiconductor wafer processing system 审中-公开
    用于半导体晶片处理系统中喷头的双气面板

    公开(公告)号：US20060021703A1

    公开(公告)日：2006-02-02

    申请号：US10901768

    申请日：2004-07-29

    申请人： Salvador Umotoy ,  Lawrence Chung-Lai Lei ,  Anh Nguyen ,  Steve Chiao ,  Hanh Nguyen

    发明人： Salvador Umotoy ,  Lawrence Chung-Lai Lei ,  Anh Nguyen ,  Steve Chiao ,  Hanh Nguyen

    IPC分类号： C23C16/00 ,  C23F1/00

    CPC分类号： C23C16/45565 ,  H01J37/3244 ,  H01J37/32522

    摘要： A faceplate for a showerhead of a semiconductor wafer processing system is provided. The faceplate has a plurality of gas passageways to provide a plurality of gases to the process region without commingling those gases before they reach the processing region within a reaction chamber. The showerhead includes a faceplate and a gas distribution manifold assembly. The faceplate defines a plurality of first gas holes that carry a first gas from the manifold assembly through the faceplate to the process region, and a plurality of channels that couple a plurality of second gas holes to a radial plenum that receives the second gas from the manifold assembly. The faceplate and the manifold assembly are each fabricated from a substantially solid nickel material.

    摘要翻译： 提供了一种用于半导体晶片处理系统的喷头的面板。 面板具有多个气体通道，以在工艺区域内提供多个气体，而不会在这些气体到达反应室内的处理区域之前混合。 喷头包括面板和气体分配歧管组件。 面板限定了多个第一气体孔，其将来自歧管组件的第一气体通过面板传送到处理区域，以及将多个第二气体孔连接到径向增压室的多个通道，其将从第二气体接收第二气体 歧管组件。 面板和歧管组件各自由基本上固体的镍材料制成。

    Lid assembly for a processing system to facilitate sequential deposition techniques
    7.
    发明申请
    Lid assembly for a processing system to facilitate sequential deposition techniques 有权
    用于处理系统的盖组件以便顺序沉积技术

    公开(公告)号：US20050115675A1

    公开(公告)日：2005-06-02

    申请号：US10993924

    申请日：2004-11-19

    申请人： Gwo-Chuan Tzu ,  Salvador Umotoy

    发明人： Gwo-Chuan Tzu ,  Salvador Umotoy

    IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23F1/00

    CPC分类号： C23C16/45544 ,  C23C16/455 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45538 ,  C23C16/45561 ,  C23C16/50 ,  H01L21/67017

    摘要： A lid assembly for a semiconductor processing system is provided. The lid assembly generally includes a lid having first and second opposed surfaces, a plurality of controllable flow channels extending from the first and second opposed surfaces and a gas control system disposed on the first surface and operably opening and closing the channels. The gas control system includes a gas manifold disposed on the lid, at least one valve coupled to the gas manifold and adapted to control a flow through one of the flow channels, a reservoir fluidly connected to the gas manifold, and a precursor source fluidly connected to the reservoir.

    摘要翻译： 提供了一种用于半导体处理系统的盖组件。 盖组件通常包括具有第一和第二相对表面的盖，从第一和第二相对表面延伸的多个可控流动通道和设置在第一表面上并可操作地打开和关闭通道的气体控制系统。 气体控制系统包括设置在盖上的气体歧管，至少一个阀，其连接到气体歧管并且适于控制通过流动通道之一的流动，流体连接到气体歧管的储存器和流体连接的前体源 到水库

    SELF ALIGNING NON CONTACT SHADOW RING PROCESS KIT
    8.
    发明申请
    SELF ALIGNING NON CONTACT SHADOW RING PROCESS KIT 有权
    自动对准非接触阴影环工艺包

    公开(公告)号：US20080072823A1

    公开(公告)日：2008-03-27

    申请号：US11870285

    申请日：2007-10-10

    申请人： Joseph Yudovsky ,  Lawrence Lei ,  Salvador Umotoy ,  Tom Madar ,  Girish Dixit ,  Gwo-Chuan Tzu

    发明人： Joseph Yudovsky ,  Lawrence Lei ,  Salvador Umotoy ,  Tom Madar ,  Girish Dixit ,  Gwo-Chuan Tzu

    IPC分类号： C23C16/458

    CPC分类号： C23C16/4585 ,  C30B25/12 ,  C30B31/14

    摘要： The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.

    摘要翻译： 本发明提供了可拆卸的第一边缘环，其被配置用于与设置在基板支撑件上的第二边缘环的销和凹槽/狭槽联接。 在一个实施例中，第一边缘环包括多个销，并且第二边缘环包括一个或多个对准凹槽和用于与销配合接合的一个或多个对准槽。 每个对准凹槽和对准槽至少与相应的销一样宽，并且每个对准槽在径向方向上延伸的长度足以补偿第一边缘环和第二边缘之间的热膨胀差 边缘环。

    Substrate support including purge ring having inner edge aligned to wafer edge
    9.
    发明授权
    Substrate support including purge ring having inner edge aligned to wafer edge 有权
    衬底支撑件包括具有与晶片边缘对准的内边缘的清洗环

    公开(公告)号：US06521292B1

    公开(公告)日：2003-02-18

    申请号：US09632645

    申请日：2000-08-04

    申请人： Joseph Yudovsky ,  Salvador Umotoy ,  Thomas Madar

    发明人： Joseph Yudovsky ,  Salvador Umotoy ,  Thomas Madar

    IPC分类号： C23C1652

    CPC分类号： C23C16/45521 ,  C23C16/455 ,  C23C16/4585 ,  H01L21/68721 ,  H01L21/68735

    摘要： The present invention provides exemplary apparatus and methods for processing substrates and for ensuring purge gases reach the substrate edge, including edges of JMF type wafers, to help prevent unwanted deposition thereon. One embodiment provides an apparatus for processing substrates which includes a chamber and a substrate support (13) disposed in the chamber. An edge ring (15) is disposed on the substrate support. The edge ring has a lip portion (30) which at least partially overhangs an upper surface (36) of the substrate support to define a gap (29) between the lip portion and the upper surface. In this manner, the edge ring is designed to form a gap which properly directs purge gases to edges of the substrate, including JMF type substrates.

    摘要翻译： 本发明提供了用于处理基板并用于确保吹扫气体到达基板边缘（包括JMF型晶片的边缘）的示例性装置和方法，以帮助防止其上不希望的沉积。 一个实施例提供了一种用于处理衬底的设备，其包括设置在腔室中的室和衬底支撑件（13）。 边缘环（15）设置在基板支撑件上。 边缘环具有唇部（30），其至少部分地悬垂在基底支撑件的上表面（36）上，以在唇部和上表面之间限定间隙（29）。 以这种方式，边缘环被设计成形成适当地将吹扫气体引导到衬底边缘的间隙，包括JMF型衬底。

    Reactor optimized for chemical vapor deposition of titanium
    10.
    发明授权
    Reactor optimized for chemical vapor deposition of titanium 失效
    用于钛化学气相沉积的反应器

    公开(公告)号：US6079356A

    公开(公告)日：2000-06-27

    申请号：US023866

    申请日：1998-02-13

    申请人： Salvador Umotoy ,  Anh N. Nguyen ,  Truc T. Tran ,  Lawrence Chung-Lei ,  Mei Chang

    发明人： Salvador Umotoy ,  Anh N. Nguyen ,  Truc T. Tran ,  Lawrence Chung-Lei ,  Mei Chang

    IPC分类号： H05H1/46 ,  C23C16/08 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/455 ,  H01J37/3244 ,  H01J37/32449

    摘要： A plasma reaction chamber particularly suited for plasma-enhance chemical vapor deposition of titanium using TiCl.sub.4 as the precursor. The reactor includes a perforated showerhead faceplate and a perforated blocker plate within the showerhead to evenly distribute the atomized TiCl.sub.4. Both the showerhead faceplate and the blocker plate are made of solid nickel. RF power is applied between the showerhead faceplate and the heater pedestal supporting the wafer to excite the processing gas into a plasma. A shield ring is set on the periphery of the heater pedestal to confine the plasma to the processing region above the wafer. The shield ring is supported on the heater pedestal by a downwardly descending ridge, thereby minimizing thermal flow. The shield ring also protects the periphery of the top surface of the heater pedestal not covered by the wafer. An isolator electrically insulates the RF-driven showerhead from the chamber body and is disposed generally above the shield ring. The bottom of the isolator and the top of the shield ring are similarly curved with a nearly constant gap between them. The small gap creates a flow choke between the processing region and an annular pumping channel. The curve of the gap prevents the plasma from extending into the pumping channel. The bottom of the chamber below the heater pedestal is covered with a quartz thermal shield insert to reduce the flow of heat to the chamber wall. A lift ring for raising lift pins selectively lifting the wafer is also composed of quartz.

    摘要翻译： 一种等离子体反应室，特别适用于使用TiCl4作为前体的等离子体增强钛的化学气相沉积。 反应器包括穿孔淋浴头面板和淋浴器内的穿孔阻塞板，以均匀分布雾化的TiCl4。 喷头面板和阻挡板均由固体镍制成。 在喷头面板和支撑晶片的加热器基座之间施加RF功率以将处理气体激发成等离子体。 屏蔽环设置在加热器基座的周边上，以将等离子体限制在晶片上方的处理区域。 屏蔽环通过向下的下降脊支撑在加热器底座上，从而最小化热流。 屏蔽环还保护未被晶片覆盖的加热器基座的顶表面的周边。 隔离器将RF驱动的喷头与室主体电绝缘并且大致设置在屏蔽环的上方。 隔离器的底部和屏蔽环的顶部类似地弯曲，它们之间具有几乎恒定的间隙。 小间隙在处理区域和环形泵送通道之间产生流动扼流圈。 间隙的曲线阻止等离子体延伸到泵送通道中。 在加热器底座下面的腔室的底部覆盖有石英热屏蔽插入件，以减少到室壁的热量流动。 用于升高提升针的提升环选择性地提升晶片也由石英组成。