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公开(公告)号：US20090247515A1
公开(公告)日：2009-10-01
申请号：US12381682
申请日：2009-03-13
申请人： Richard Martin , Brenton T. Flatt , Jackline Eve Dalgard , Venkataiah Bollu , Ping Huang , Raju Mohan , Edwin Schweiger , Tie-Lin Wang
发明人： Richard Martin , Brenton T. Flatt , Jackline Eve Dalgard , Venkataiah Bollu , Ping Huang , Raju Mohan , Edwin Schweiger , Tie-Lin Wang
IPC分类号： A61K31/46 , C07D451/02 , A61K31/5377 , A61P3/00
CPC分类号： C07D451/04
摘要： A compound according to Formula A: or a pharmaceutically acceptable salt thereof, wherein R11, G1 and G2 are as defined in the specification, pharmaceutical compositions thereof, and methods of use thereof.
摘要翻译： 根据式A的化合物或其药学上可接受的盐，其中R 11，G 1和G 2如本说明书中所定义，其药物组合物及其使用方法。
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公开(公告)号：US08163771B2
公开(公告)日：2012-04-24
申请号：US12381682
申请日：2009-03-13
申请人： Richard Martin , Brenton T. Flatt , Jackline Eve Dalgard , Venkataiah Bollu , Ping Huang , Raju Mohan , Edwin Schweiger , Tie-Lin Wang
发明人： Richard Martin , Brenton T. Flatt , Jackline Eve Dalgard , Venkataiah Bollu , Ping Huang , Raju Mohan , Edwin Schweiger , Tie-Lin Wang
IPC分类号： A10N43/42 , A61K31/44 , C07D451/00
CPC分类号： C07D451/04
摘要： A compound according to Formula I: or a pharmaceutically acceptable salt thereof, wherein R1, R2, R11, L1 and X are as defined in the specification, pharmaceutical compositions thereof, and methods of use thereof.
摘要翻译： 根据式I的化合物或其药学上可接受的盐，其中R 1，R 2，R 11，L 1和X如本说明书中所定义，其药物组合物及其使用方法。
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公开(公告)号：US20100105675A2
公开(公告)日：2010-04-29
申请号：US12381682
申请日：2009-03-13
申请人： Richard Martin , Brenton Flatt , Jackline Dalgard , Venkataiah Bollu , Ping Huang , Raju Mohan , Edwin Schweiger , Tie Lin Wang
发明人： Richard Martin , Brenton Flatt , Jackline Dalgard , Venkataiah Bollu , Ping Huang , Raju Mohan , Edwin Schweiger , Tie Lin Wang
IPC分类号： A61K31/46 , C07D451/02 , A61K31/5377 , A61P3/00
CPC分类号： C07D451/04
摘要： A compound according to Formula I: or a pharmaceutically acceptable salt thereof, wherein R1, R2, R11, L1 and X are as defined in the specification, pharmaceutical compositions thereof, and methods of use thereof.
摘要翻译： 根据式I的化合物或其药学上可接受的盐，其中R 1，R 2，R 11，L 1和X如本说明书中所定义，其药物组合物及其使用方法。
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公开(公告)号：US20080119488A1
公开(公告)日：2008-05-22
申请号：US11572579
申请日：2005-07-24
申请人： Christopher D. Bayne , Alan T. Johnson , Shao-Po Lu , Raju Mohan , Michael C. Nyman , Edwin J. Schweiger , William C. Stevens , Haixia Wang , Yinong Xie , Lynne Canne Bannen , Diva Sze-Ming Chan , Ping Huang , Vasu Jammalamadaka , Richard G. Khoury , Morrison B. Mac , Jason Jevious Parks , Yong Wang , Wei Xu
发明人： Christopher D. Bayne , Alan T. Johnson , Shao-Po Lu , Raju Mohan , Michael C. Nyman , Edwin J. Schweiger , William C. Stevens , Haixia Wang , Yinong Xie , Lynne Canne Bannen , Diva Sze-Ming Chan , Ping Huang , Vasu Jammalamadaka , Richard G. Khoury , Morrison B. Mac , Jason Jevious Parks , Yong Wang , Wei Xu
IPC分类号： A61K31/497 , C07D211/98 , A61K31/4418 , C07D401/12 , A61K31/513 , C07D401/04 , A61K31/443 , A61P3/00 , A61P25/00 , C12N5/06 , C07K14/00 , A61P9/00 , A61P17/10 , A61K31/4433 , C07D401/14 , A61K31/4439 , A61K31/4545 , C07D409/04 , A61K31/4436
CPC分类号： C07D401/12 , C07D213/84 , C07D213/85 , C07D401/04 , C07D401/06 , C07D401/10 , C07D401/14 , C07D405/04 , C07D405/06 , C07D405/12 , C07D405/14 , C07D409/04 , C07D409/06 , C07D409/14 , C07D413/06 , C07D417/04 , C07D417/06 , C07D417/12
摘要： Compounds of the invention, such as compounds of formula (I), where n, m, A, R1, R2, R3, R4 and R5 are defined herein, are useful as modulators of the activity of liver X receptors. Pharmaceutical compositions containing the compounds and methods of using the compounds are also disclosed.
摘要翻译： 本发明的化合物，例如式（I）化合物，其中n，m，A，R 1，R 2，R 3，R 4和R 5在本文中定义，可用作肝X受体活性的调节剂。 还公开了含有化合物的药物组合物和使用该化合物的方法。
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公开(公告)号：US09597769B2
公开(公告)日：2017-03-21
申请号：US13488149
申请日：2012-06-04
申请人： Paul Andre Lefevre , William C. Allison , James P. LaCasse , Diane Scott , Alexander William Simpson , Ping Huang , Leslie M. Charns
发明人： Paul Andre Lefevre , William C. Allison , James P. LaCasse , Diane Scott , Alexander William Simpson , Ping Huang , Leslie M. Charns
CPC分类号： B24B37/205 , B24B37/16 , B24B37/22 , B24B37/26 , B24D11/003 , B24D18/0009
摘要： Polishing pads with a polishing surface layer having an aperture or opening above a transparent foundation layer are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a global top surface and a transparent region. A polishing surface layer is attached to the global top surface of the foundation layer. The polishing surface layer has a polishing surface and a back surface. An aperture is disposed in the polishing pad from the back surface through to the polishing surface of the polishing surface layer, and aligned with the transparent region of the foundation layer. The foundation layer provides an impermeable seal for the aperture at the back surface of the polishing surface layer. Methods of fabricating such polishing pads are also described.
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公开(公告)号：US20160155688A9
公开(公告)日：2016-06-02
申请号：US14033140
申请日：2013-09-20
申请人： Yan Xun Xue , Yueh-Se Ho , Hamza Yilmaz , Jun Lu , Lei Shi , Liang Zhao , Ping Huang
发明人： Yan Xun Xue , Yueh-Se Ho , Hamza Yilmaz , Jun Lu , Lei Shi , Liang Zhao , Ping Huang
IPC分类号： H01L23/495
CPC分类号： H01L23/49537 , H01L23/49541 , H01L23/49548 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L2224/16245 , H01L2924/13091 , H01L2924/00
摘要： A power semiconductor package has an ultra thin chip with front side molding to reduce substrate resistance; a lead frame unit with grooves located on both side leads provides precise positioning for connecting numerous bridge-shaped metal clips to the front side of the side leads. The bridge-shaped metal clips are provided with bridge structure and half or fully etched through holes for relieving superfluous solder during manufacturing process.
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公开(公告)号：US20150021780A1
公开(公告)日：2015-01-22
申请号：US13946949
申请日：2013-07-19
申请人： Yuping Gong , Yan Xun Xue , Ming-Chen Lu , Ping Huang , Jun Lu , Hamza Yilmaz
发明人： Yuping Gong , Yan Xun Xue , Ming-Chen Lu , Ping Huang , Jun Lu , Hamza Yilmaz
CPC分类号： H05K3/306 , H01L23/13 , H01L23/49827 , H01L23/49838 , H01L23/49844 , H01L23/49861 , H01L24/06 , H01L24/24 , H01L24/25 , H01L24/29 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/48 , H01L24/49 , H01L24/82 , H01L24/83 , H01L24/84 , H01L24/85 , H01L24/89 , H01L24/92 , H01L2224/04042 , H01L2224/0603 , H01L2224/24101 , H01L2224/24147 , H01L2224/29101 , H01L2224/32225 , H01L2224/371 , H01L2224/40095 , H01L2224/40225 , H01L2224/40245 , H01L2224/4103 , H01L2224/48227 , H01L2224/48465 , H01L2224/49111 , H01L2224/73267 , H01L2224/82101 , H01L2224/82102 , H01L2224/83192 , H01L2224/83801 , H01L2224/85 , H01L2224/92224 , H01L2924/00014 , H01L2924/0781 , H01L2924/13091 , H01L2924/15153 , H05K3/32 , H05K3/4697 , Y10T29/4913 , Y10T29/49139 , Y10T29/49165 , Y10T29/49169 , H01L2924/00 , H01L2924/00015 , H01L2924/014 , H01L2224/45099 , H01L2224/8384 , H01L2224/8485 , H01L2224/8385
摘要： A thin power device comprises a substrate having a first set of first contact pads at a front surface of the substrate electrically connecting to a second set of second contact pads at a back surface of the substrate, a through opening opened from the front surface and through the substrate exposing a third contact pad at the back surface of the substrate, a semiconductor chip embedded into the through opening with a back metal layer at a back surface of the semiconductor chip attached on the third contact pad, and a plurality of conductive structures electrically connecting electrodes at a front surface of the semiconductor chip with the corresponding first contact pads in the first sets of first contact pads.
摘要翻译： 薄功率器件包括衬底，衬底在衬底的前表面处具有第一组第一接触焊盘，电连接到衬底的背面处的第二组第二接触焊盘，从前表面开口并穿过 所述基板在所述基板的背面暴露第三接触焊盘，在所述第三接触焊盘的所述半导体芯片的后表面处嵌入所述通孔中的背面金属层的半导体芯片，以及多个导电结构， 将所述半导体芯片的前表面处的电极与所述第一组第一接触焊盘中的对应的第一接触焊盘连接。
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8.发明申请公开(公告)号：US20140242756A1
公开(公告)日：2014-08-28
申请号：US13775212
申请日：2013-02-24
申请人： Yan Xun Xue , Ping Huang , Hamza Yilmaz , Yueh-Se Ho , Lei Shi , Liang Zhao , Ping Li Wu , Lei Duan , Yuping Gong
发明人： Yan Xun Xue , Ping Huang , Hamza Yilmaz , Yueh-Se Ho , Lei Shi , Liang Zhao , Ping Li Wu , Lei Duan , Yuping Gong
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , H01L21/561 , H01L23/3114 , H01L24/11 , H01L24/13 , H01L24/73 , H01L2224/1184 , H01L2224/13101 , H01L2224/13111 , H01L2224/13147 , H01L2224/29 , H01L2224/2919 , H01L2224/73104 , H01L2224/83191 , H01L2924/10156 , H01L2924/10157 , H01L2924/13091 , H01L2924/18301 , H01L2924/00 , H01L2924/00014 , H01L2924/014
摘要： A method for preparing semiconductor devices in a flip chip process comprises forming deep grooves surrounding each of the semiconductor chips; depositing a first plastic package material to form a first plastic package layer covering front surface of the semiconductor wafer and filling the deep grooves; depositing a metal layer at back surface of the semiconductor wafer after grinding; grinding an outermost portion of the metal layer thus forming a ring area located at back surface around edge of the semiconductor wafer not covered by the metal layer; cutting the first plastic package layer, the semiconductor wafer, the metal layer and the first plastic package material filled in the deep grooves along a straight line formed by two ends of each of the deep grooves filled with the first plastic package material; and picking up the semiconductor devices and mounting on a substrate without flipping the semiconductor devices.
摘要翻译： 一种用于在倒装芯片工艺中制备半导体器件的方法包括形成围绕每个半导体芯片的深槽; 沉积第一塑料封装材料以形成覆盖半导体晶片的前表面并填充深槽的第一塑料封装层; 在研磨后在半导体晶片的背面沉积金属层; 研磨金属层的最外部分，从而形成位于未被金属层覆盖的半导体晶片的边缘周围的背面的环形区域; 沿着由填充有第一塑料包装材料的每个深槽的两端形成的直线切割填充在深槽中的第一塑料封装层，半导体晶片，金属层和第一塑料封装材料; 并且拾取半导体器件并安装在衬底上，而不会翻转半导体器件。
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公开(公告)号：US08772144B2
公开(公告)日：2014-07-08
申请号：US13294903
申请日：2011-11-11
申请人： TingGang Zhu , Anup Bhalla , Ping Huang , Yueh-se Ho
发明人： TingGang Zhu , Anup Bhalla , Ping Huang , Yueh-se Ho
CPC分类号： H01L29/872 , H01L21/0217 , H01L21/0254 , H01L21/28581 , H01L21/30612 , H01L21/31111 , H01L21/56 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L25/18 , H01L27/0248 , H01L27/0814 , H01L29/0619 , H01L29/0688 , H01L29/2003 , H01L29/402 , H01L29/405 , H01L29/417 , H01L29/66136 , H01L29/66143 , H01L29/66212 , H01L29/861 , H01L29/8611 , H01L2224/0401 , H01L2224/04042 , H01L2224/05016 , H01L2224/05567 , H01L2224/11616 , H01L2224/13017 , H01L2224/13021 , H01L2224/13022 , H01L2924/00014 , H01L2924/1033 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要： A vertical conduction nitride-based Schottky diode is formed using an insulating substrate which was lifted off after the diode device is encapsulated on the front side with a wafer level molding compound. The wafer level molding compound provides structural support on the front side of the diode device to allow the insulating substrate to be lifted off so that a conductive layer can be formed on the backside of the diode device as the cathode electrode. A vertical conduction nitride-based Schottky diode is thus realized. In another embodiment, a protection circuit for a vertical GaN Schottky diode employs a silicon-based vertical PN junction diode connected in parallel to the GaN Schottky diode to divert reverse bias avalanche current.
摘要翻译： 使用绝缘基板形成垂直导电氮化物基肖特基二极管，绝缘基板在二极管器件用晶片级模塑料封装在前侧之后被提起。 晶片级成型复合体在二极管器件的前侧提供结构支撑，以允许绝缘基板被提起，使得可以在作为阴极的二极管器件的背面上形成导电层。 因此实现了基于垂直导电氮化物的肖特基二极管。 在另一个实施例中，用于垂直GaN肖特基二极管的保护电路采用与GaN肖特基二极管并联连接的硅基垂直PN结二极管，以转移反向偏置雪崩电流。
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公开(公告)号：US08657653B2
公开(公告)日：2014-02-25
申请号：US12895479
申请日：2010-09-30
IPC分类号： B24D11/00
CPC分类号： B24D11/003 , B24B37/013 , B24B37/205
摘要： Homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.
摘要翻译： 描述了使用涡流端点检测来研磨半导体衬底的均匀抛光垫。 还描述了使用涡流端点检测来制造用于抛光半导体衬底的均匀抛光垫的方法。
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