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    Methods of Manufacturing Semiconductor Device
    2.
    发明申请
    Methods of Manufacturing Semiconductor Device 有权
    制造半导体器件的方法

    公开(公告)号：US20160049306A1

    公开(公告)日：2016-02-18

    申请号：US14692330

    申请日：2015-04-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Cha-won Koh ,  Hyun-woo Kim ,  Jong-soo Kim ,  Jin Park ,  Hyung-rae Lee

    IPC: H01L21/306 ,  H01L21/027 ,  H01L21/02 ,  H01L21/308

    CPC classification number: H01L21/30604 ,  H01L21/02118 ,  H01L21/02343 ,  H01L21/02345 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

    Abstract: The present inventive concept provides methods of manufacturing a semiconductor device including forming an inner mask layer on an etching target film, the inner mask layer including a polymer; forming a porous film on the etching target film, the porous film covering the inner mask layer; supplying an acid source to an outer surface area of the inner mask layer through the porous film; inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by using the acid source; forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask.

    Abstract translation: 本发明构思提供了制造半导体器件的方法，包括在蚀刻靶膜上形成内掩模层，内掩模层包括聚合物; 在所述蚀刻目标膜上形成多孔膜，所述多孔膜覆盖所述内掩模层; 通过多孔膜将酸源供给到内掩模层的外表面区域; 通过使用酸源在外表面区域引起包含在内掩模层中的聚合物的化学反应; 通过去除内部掩模层的化学反应部分形成内部掩模图案; 并且通过使用至少一部分多孔膜和内部掩模图案作为蚀刻掩模来蚀刻蚀刻目标膜。

    Conductive atomic force microscope and method of operating the same
    6.
    发明授权
    Conductive atomic force microscope and method of operating the same 有权
    导电原子力显微镜及其操作方法

    公开(公告)号：US09261532B1

    公开(公告)日：2016-02-16

    申请号：US14694115

    申请日：2015-04-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-woo Kim ,  Woo-seok Ko ,  Young-hwan Kim ,  Jeong-hoi Kim ,  Baek-man Sung ,  Hyung-su Son ,  Chae-ho Shin ,  Yu-sin Yang ,  Jae-youn Wi ,  Sang-kil Lee ,  Chung-sam Jun

    IPC: G01Q60/40

    CPC classification number: G01Q60/40 ,  G01Q70/06

    Abstract: A conductive atomic force microscope including a plurality of probe structures each including a probe and a cantilever connected thereto, a power supplier applying a bias voltage, a current detector detecting a first current flowing between a sample object and each of the probes and a second current flowing between a measurement object and each of the probes, and calculating representative currents for the sample and measurement objects based on the first and second currents, respectively, and a controller calculating a ratio between representative currents of the sample object measured by each of the probe structures, calculating a scaling factor for scaling the representative current with respect to the measurement object measured by each of the probes, and determine a reproducible current measurement value based on the second measurement current and the scaling factor may be provided.

    Abstract translation: 一种导电原子力显微镜，包括多个探针结构，每个探针结构包括探针和连接到其上的悬臂，施加偏置电压的电源，检测在样品物体和每个探针之间流动的第一电流的电流检测器和第二电流 在测量对象和每个探针之间流动，并且基于第一和第二电流分别计算样本和测量对象的代表性电流，以及控制器，计算由每个探针测量的样本对象的代表性电流之间的比率 计算相对于由每个探针测量的测量对象的代表性电流的缩放因子，并且可以提供基于第二测量电流和缩放因子来确定可重现的电流测量值。

    Methods of manufacturing semiconductor device
    10.
    发明授权
    Methods of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US09412604B2

    公开(公告)日：2016-08-09

    申请号：US14692330

    申请日：2015-04-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Cha-won Koh ,  Hyun-woo Kim ,  Jong-soo Kim ,  Jin Park ,  Hyung-rae Lee

    IPC: H01L21/30 ,  H01L21/306 ,  H01L21/308 ,  H01L21/027 ,  H01L21/02

    CPC classification number: H01L21/30604 ,  H01L21/02118 ,  H01L21/02343 ,  H01L21/02345 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

    Abstract: The present inventive concept provides methods of manufacturing a semiconductor device including forming an inner mask layer on an etching target film, the inner mask layer including a polymer; forming a porous film on the etching target film, the porous film covering the inner mask layer; supplying an acid source to an outer surface area of the inner mask layer through the porous film; inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by using the acid source; forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask.

    Abstract translation: 本发明构思提供了制造半导体器件的方法，包括在蚀刻靶膜上形成内掩模层，内掩模层包括聚合物; 在所述蚀刻目标膜上形成多孔膜，所述多孔膜覆盖所述内掩模层; 通过多孔膜将酸源供给到内掩模层的外表面区域; 通过使用酸源在外表面区域引起包含在内掩模层中的聚合物的化学反应; 通过去除内部掩模层的化学反应部分形成内部掩模图案; 并且通过使用至少一部分多孔膜和内部掩模图案作为蚀刻掩模来蚀刻蚀刻目标膜。

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