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公开(公告)号：US09362448B2
公开(公告)日：2016-06-07
申请号：US14686619
申请日：2015-04-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soo Jeong Choi , Jung Sub Kim , Byung Kyu Chung , Yeon Woo Seo , Dong Gun Lee
IPC: H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L33/06 , H01L33/08 , H01L33/32 , H01L33/12 , H05B33/08
CPC classification number: H01L33/06 , H01L27/15 , H01L33/0025 , H01L33/08 , H01L33/12 , H01L33/18 , H01L33/24 , H01L33/32 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H05B33/0803 , H05B33/0845 , H01L2924/00014 , H01L2924/00012
Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type nitride semiconductor and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer. Each of the plurality of light emitting nanostructures includes a nanocore formed of the first conductivity-type nitride semiconductor, a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium, an active layer disposed on the stress control layer and including a nitride semiconductor containing indium, and a second conductivity-type nitride semiconductor layer disposed on the active layer.
Abstract translation: 提供一种纳米结构半导体发光器件，其包括由第一导电型氮化物半导体形成的基极层和多个发光纳米结构，所述多个发光纳米结构被设置为在基底层上彼此间隔开。 多个发光纳米结构中的每一个包括由第一导电型氮化物半导体形成的纳米孔，设置在纳米孔的表面上的应力控制层，并且包括含有铟的氮化物半导体，设置在应力控制层上的有源层和 包括含有铟的氮化物半导体和设置在有源层上的第二导电型氮化物半导体层。
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公开(公告)号：US09269865B2
公开(公告)日：2016-02-23
申请号：US14516470
申请日：2014-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae Myung Chun , Jung Sub Kim , Jin Sub Lee , Sam Mook Kang , Yeon Woo Seo , Han Kyu Seong , Young Jin Choi , Jae Hyeok Heo
CPC classification number: H01L33/24 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/38 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.
Abstract translation: 纳米结构半导体发光器件可以包括第一导电型半导体基底层，掩模层，设置在基底层上并具有暴露基底部分的多个开口，多个发光纳米结构设置在多个开口中 以及设置在掩模层上的多晶硅电流抑制层。 多晶硅电流抑制层的至少一部分设置在第二导电型半导体层的下方。 每个发光纳米结构包括第一导电型半导体纳米孔，有源层和第二导电型半导体层。
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公开(公告)号：US09748438B2
公开(公告)日：2017-08-29
申请号：US15190406
申请日：2016-06-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Sub Kim , Yeon Woo Seo , Dong Gun Lee , Byung Kyu Chung , Dae Myung Chun , Soo Jeong Choi
CPC classification number: H01L33/007 , B82Y20/00 , F21K9/232 , F21Y2115/10 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0033 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.
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Patent Agency Ranking
公开(公告)号：US09508898B2
公开(公告)日：2016-11-29
申请号：US14838322
申请日：2015-08-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Byung Kyu Chung , Jung Sub Kim , Soo Jeong Choi , Yeon Woo Seo , Dong Gun Lee
CPC classification number: H01L33/24 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/18 , H01L33/32 , H01L2224/16245 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.
Abstract translation: 提供一种纳米结构半导体发光器件，包括：由第一导电型氮化物半导体形成的基极层; 以及多个发光纳米结构，其设置成在所述基底层上彼此间隔开，其中所述多个发光纳米结构中的每一个包括由第一导电型氮化物半导体形成的纳米孔; 应力控制层，设置在所述纳米孔的表面上，并且包括含有铟的氮化物半导体; 设置在应力控制层上的有源层; 设置在有源层上的第二导电型氮化物半导体层; 以及缺陷阻挡层，其设置在所述应力控制层的至少一部分上，并且包括具有低于所述应力控制层的晶格常数的晶格常数的氮化物半导体层。
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公开(公告)号：US09461199B2
公开(公告)日：2016-10-04
申请号：US14752814
申请日：2015-06-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae Hyeok Heo , Jung Sub Kim , Young Jin Choi , Jin Sub Lee , Sam Mook Kang , Yeon Woo Seo , Han Kyu Seong , Dae Myung Chun
CPC classification number: H01L33/06 , H01L27/153 , H01L33/0025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H05B33/0803 , H01L2924/00014
Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.
Abstract translation: 提供了一种纳米结构半导体发光器件，其包括由第一导电型半导体形成的基极层，设置在基底层上并具有多个开口的绝缘层，以及多个发光纳米结构， 开口。 每个发光纳米结构包括由第一导电型半导体形成的纳米孔，以及依次设置在纳米孔表面上的有源层和第二导电型半导体层。 多个发光纳米结构通过相同的生长工艺形成，并分成n组（其中n为2以上的整数），每组具有至少两个发光纳米结构。 纳米孔的直径，高度和间距中的至少一个是不同的，使得有源层通过组发射具有不同波长的光。
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公开(公告)号：US09257605B2
公开(公告)日：2016-02-09
申请号：US14790047
申请日：2015-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yeon Woo Seo , Jung-Sub Kim , Young Jin Choi , Denis Sannikov , Han Kyu Seong , Dae Myung Chun , Jae Hyeok Heo
CPC classification number: H01L33/24 , F21K9/232 , F21S41/147 , F21S45/43 , F21S45/47 , F21Y2115/10 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.
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公开(公告)号：US09941443B2
公开(公告)日：2018-04-10
申请号：US15063150
申请日：2016-03-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Sub Lee , Jung Sub Kim , Sam Mook Kang , Yeon Woo Seo , Han Kyu Seong , Dae Myung Chun , Young Jin Choi , Jae Hyeok Heo
IPC: H01L33/24 , H01L33/08 , H01L33/14 , H01L33/18 , H01L33/00 , H01L33/02 , H01L33/42 , H01L33/48 , H01L33/52
CPC classification number: H01L33/145 , H01L33/002 , H01L33/025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L33/486 , H01L33/52 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
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公开(公告)号：US09312439B2
公开(公告)日：2016-04-12
申请号：US14454536
申请日：2014-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub Lee , Jung Sub Kim , Sam Mook Kang , Yeon Woo Seo , Han Kyu Seong , Dae Myung Chun , Young Jin Choi , Jae Hyeok Heo
CPC classification number: H01L33/145 , H01L33/002 , H01L33/025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L33/486 , H01L33/52 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
Abstract translation: 提供一种半导体发光器件，其包括第一导电型半导体基底层和多个发光纳米结构，所述多个发光纳米结构在第一导电型半导体基底层上彼此间隔开，每个发光纳米结构包括第一导电性 型半导体芯，有源层，电荷阻挡层和第二导电型半导体层，其中第一导电型半导体芯在晶体学方向上具有不同的第一和第二晶体面。
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