摘要:
An optical interconnection in a semiconductor integrated circuit includes an opaque coating provided on a surface of the integrated circuit chip. The opaque coating has therein an opening which is positioned above a light receiving element incorporated in the chip and is filled with a transparent material layer. The transparent layer may have a lens action and/or a wavelength-selectivity.
摘要:
The present invention relates to an optical functional device of an optical waveguide type, particularly to an optical waveguide type with an organic nonlinear optical material suitable for the use in the fields of optical communication or optical information processing. In other words, the present invention provides an optical functional device having an organic nonlinear optical material as an optical waveguide embedded into the surface of a substrate and being an organic nonlinear optical material charged into a hollow part which is composed of a channel as a slit provided on the surface of said substrate and a further substrate for covering the upper part of the channel.
摘要:
A liquid-cooled circuit device including: a module having a circuit element and a module base plate on surface of which the circuit element is mounted; a circuit case for accommodating the module; and a cooling liquid chamber for flowing a cooling liquid in contact with a back face of the module base plate of said module. The module base plate of the module is fitted into an opening provided in a member forming the cooling liquid chamber and welded without a gap.
摘要:
A cavity-down type package for a semiconductor device comprises an insulating base substrate on which the semiconductor device and another insulating cap substrate with plural outer connection terminals on its outer surface and with electrodes provided on conductive layers for electric conduction on its inner surface. The electrodes on the insulating base substrate and those on the insulating cap substrate are connected with each other by using conductive material such as bumps.
摘要:
A semiconductor package for use in computers includes a insulating substrate onto which a semiconductor device is mounted, an insulating cap which shuts out outside air and seals said semiconductor device, power-source lines which provide power to the semiconductor device, and signal lines which transmit output signals from the semiconductor device to external circuits. The signal lines are arranged perpendicularly to the insulating substrate so that they are prevented from the dielectric constant of the insulating substrate, while the power-source lines are formed within the insulating substrate and connected through conductive layers parallel to the surface onto which the semiconductor is mounted to external leads.
摘要:
A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.
摘要:
A semiconductor pressure transducer including a measuring diaphragm of semiconductor material for sensing pressure supported by a support member of the same material. An oxide layer and a thin glass layer are interposed between the measuring diaphragm and the support member.
摘要:
A semiconductor pressure transducer includes a monocrystalline semiconductor diaphragm, the outer edges of which are fixed. When subjected to pressure, the transducer produces radial strains of opposite polarity in a central portion thereof and a portion surrounding the central portion close to the edge of the strain inducing region. The diaphragm contains a plurality of elongated resistances formed of semiconductor material of the same conductivity type which are electrically isolated from the diaphragm, per se. Resistances of an individual set which lie in proximity to one another are combined in the form of a bridge. The longitudinal direction of resistances forming one set of opposing arms of the bridge extend along axes of the same crystal system as the longitudinal direction of the elongated resistances forming the other set of opposing arms of the bridge. However, the longitudinal directions of the separate sets of resistances forming the opposing arms of the bridge lie in directions so that they do not orthogonally intersect each other.
摘要:
In order to bring a moduled power converter into less size and cost in the case of a structure having a lead-insert-case, an insulated metal circuit board and a printed circuit board, a difficulty was encountered in thinning a wiring width and an increase in pad area for each metal wire has interfered with a reduction in its size and cost.In the present invention to cope with it, a power converter is constructed by using a semiconductor module having such a structure that a metal base and lead frames are adhered to each other in a state in which an insulating adhesive sheet is interposed therebetween, a resin-molded outer package is adhered to the metal base with an adhesive or the like, and a resin sealing agent is charged into the resin-molded outer package to thereby integrally seal the resin-molded outer package and circuit parts such as semiconductor elements implemented therein, whereby a reduction in size and cost thereof is realized.
摘要:
An input-output wiring for the power circuit and a ground layer are formed on a metal substrate of a power hybrid integrated circuit apparatus. A plurality of windows are opened at predetermined positions of a circuit substrate to which electronic parts such as an IC driver, a chip resistor etc. are connected. Ceramic chips are soldered on the exposed surface of the metal substrate in the windows, and the power semiconductor elements are connected through metal bridges on the ceramic chips. Connection between lower electrode of adjoining power semiconductor elements or between lower part of the power semiconductor element and an input/output wiring is made by means of a part of the metal bridge.