Optical functional device of an optical waveguide type
    2.
    发明授权
    Optical functional device of an optical waveguide type 失效
    光波导型光功能元件

    公开(公告)号:US4896930A

    公开(公告)日:1990-01-30

    申请号:US158706

    申请日:1988-02-22

    摘要: The present invention relates to an optical functional device of an optical waveguide type, particularly to an optical waveguide type with an organic nonlinear optical material suitable for the use in the fields of optical communication or optical information processing. In other words, the present invention provides an optical functional device having an organic nonlinear optical material as an optical waveguide embedded into the surface of a substrate and being an organic nonlinear optical material charged into a hollow part which is composed of a channel as a slit provided on the surface of said substrate and a further substrate for covering the upper part of the channel.

    摘要翻译: 本发明涉及一种光波导型的光功能器件,特别涉及适合于在光通信或光信息处理领域中使用的有机非线性光学材料的光波导型。 换句话说,本发明提供一种光学功能元件,其具有嵌入到基板的表面的作为光波导的有机非线性光学材料,并且是装入中空部分的有机非线性光学材料,所述中空部分由通道作为狭缝 设置在所述基板的表面上,以及另一基板,用于覆盖通道的上部。

    Method of making silicon diaphragm pressure sensor
    6.
    发明授权
    Method of making silicon diaphragm pressure sensor 失效
    制造硅膜压力传感器的方法

    公开(公告)号:US4670969A

    公开(公告)日:1987-06-09

    申请号:US694990

    申请日:1985-01-25

    摘要: A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.

    摘要翻译: 制造硅膜压力传感器的方法包括在单晶硅衬底的一个表面上形成氧化膜。 在氧化物膜上形成多晶硅层。 在形成多晶硅层之前可以部分地去除氧化膜。 将多晶硅层加热熔化,使其重结晶,从而将多晶硅层转化为单晶硅层。 在单晶硅层上可以外延生长另外的单晶硅层。 通过使用氧化膜作为蚀刻停止层,在从衬底的另一个表面到氧化膜的范围内蚀刻衬底的预定部分,从而提供压力传感器的隔膜。

    Semiconductor pressure transducer
    8.
    发明授权
    Semiconductor pressure transducer 失效
    半导体压力传感器

    公开(公告)号:US4065971A

    公开(公告)日:1978-01-03

    申请号:US701531

    申请日:1976-07-01

    IPC分类号: H01L29/84 G01L9/00 G01L9/06

    CPC分类号: G01L9/0054

    摘要: A semiconductor pressure transducer includes a monocrystalline semiconductor diaphragm, the outer edges of which are fixed. When subjected to pressure, the transducer produces radial strains of opposite polarity in a central portion thereof and a portion surrounding the central portion close to the edge of the strain inducing region. The diaphragm contains a plurality of elongated resistances formed of semiconductor material of the same conductivity type which are electrically isolated from the diaphragm, per se. Resistances of an individual set which lie in proximity to one another are combined in the form of a bridge. The longitudinal direction of resistances forming one set of opposing arms of the bridge extend along axes of the same crystal system as the longitudinal direction of the elongated resistances forming the other set of opposing arms of the bridge. However, the longitudinal directions of the separate sets of resistances forming the opposing arms of the bridge lie in directions so that they do not orthogonally intersect each other.

    摘要翻译: 半导体压力传感器包括其外边缘固定的单晶半导体膜片。 当经受压力时,换能器在其中心部分产生相反极性的径向应变,并且围绕中心部分的部分靠近应变诱导区域的边缘产生。 隔膜包含由与膜片电气隔离的相同导电类型的半导体材料形成的多个细长电阻。 位于彼此靠近的单个组的电阻以桥的形式组合。 形成桥的一组相对臂的电阻的纵向方向沿与构成桥的另一组相对臂的细长电阻的纵向相同的晶体系的轴线延伸。 然而,形成桥的相对臂的单独的电阻组的纵向方向在方向上,使得它们不会彼此正交相交。

    Semiconductor module, power converter using the same and manufacturing
method thereof
    9.
    发明授权
    Semiconductor module, power converter using the same and manufacturing method thereof 有权
    半导体模块,使用该半导体模块的功率转换器及其制造方法

    公开(公告)号:US6144571A

    公开(公告)日:2000-11-07

    申请号:US506269

    申请日:2000-02-17

    摘要: In order to bring a moduled power converter into less size and cost in the case of a structure having a lead-insert-case, an insulated metal circuit board and a printed circuit board, a difficulty was encountered in thinning a wiring width and an increase in pad area for each metal wire has interfered with a reduction in its size and cost.In the present invention to cope with it, a power converter is constructed by using a semiconductor module having such a structure that a metal base and lead frames are adhered to each other in a state in which an insulating adhesive sheet is interposed therebetween, a resin-molded outer package is adhered to the metal base with an adhesive or the like, and a resin sealing agent is charged into the resin-molded outer package to thereby integrally seal the resin-molded outer package and circuit parts such as semiconductor elements implemented therein, whereby a reduction in size and cost thereof is realized.

    摘要翻译: 为了在具有引线插入壳体,绝缘金属电路板和印刷电路板的结构的情况下将模块化的功率转换器带入更小的尺寸和成本,在布线宽度变薄和增加时遇到困难 在每个金属线的焊盘区域中,其尺寸和成本受到干扰。 在本发明中,通过使用具有这样的结构的半导体模块来构成功率转换器,所述半导体模块具有金属基底和引线框架彼此粘合的状态,其间插入有绝缘粘合片,树脂 模塑的外包装用粘合剂等粘合到金属基底上,树脂密封剂装入树脂模塑的外包装中,从而将树脂模塑的外包装和其中实现的半导体元件的电路部件整体密封 从而实现了尺寸和成本的降低。