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公开(公告)号:US10976491B2
公开(公告)日:2021-04-13
申请号:US15795349
申请日:2017-10-27
申请人: The Research Foundation for The State University of New York , The Trustees of Columbia University in the City of New York , Analog Photonics, LLC , Arizona Board of Regents on behalf of the University of Arizona
发明人: Douglas Coolbaugh , Michael Watts , Michal Lipson , Keren Bergman , Thomas Koch , Jeremiah Hebding , Daniel Pascual , Douglas La Tulipe
IPC分类号: G02B6/122 , G02B6/136 , G02B6/132 , H01L23/498 , H01S5/22 , H01L21/48 , H01L23/13 , G02B6/42 , G02B6/30 , G02B6/43 , H01S5/022 , G02B6/12
摘要: In one embodiment an optoelectronic system can include a photonics interposer having a substrate and a functional interposer structure formed on the substrate, a plurality of through vias carrying electrical signals extending through the substrate and the functional interposer structure, and a plurality of wires carrying signals to different areas of the functional interposer structure. The system can further include one or more photonics device integrally formed in the functional interposer structure, and one or more prefabricated component attached to the functional interposer structure.
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公开(公告)号:US11435523B2
公开(公告)日:2022-09-06
申请号:US16909557
申请日:2020-06-23
IPC分类号: G02B6/12 , H01L21/48 , H01L23/498 , H01L31/02 , H01L31/0232 , G02B6/13 , G02B6/42 , H01L23/00 , G02B6/43 , H01L27/12 , H01L21/18 , H01L21/762 , H01L25/18 , H01L25/00 , H01L25/065
摘要: There is set forth herein an optoelectrical system comprising: a conductive path for supplying an input voltage to a photonics device, wherein the conductive path comprises a base structure through via extending through a substrate and a photonics structure through via, the photonics structure through via extending through a photonics device dielectric stack. There is set forth herein an optoelectrical system comprising: a second structure fusion bonded to an interposer base dielectric stack of a first structure. There is set forth herein a method comprising: fabricating a second wafer built structure using a second wafer, the second wafer built structure defining a photonics structure and having a photonics device integrated into a photonics device dielectric stack of the second wafer based structure; and wafer scale bonding the second wafer built structure to a first wafer built structure.
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公开(公告)号:US10816724B2
公开(公告)日:2020-10-27
申请号:US16372763
申请日:2019-04-02
IPC分类号: G02B6/122 , H01L21/762 , H01L21/48 , G02B6/136 , G02B6/12
摘要: There is set forth herein a method including depositing a layer formed of barrier material over a conductive material formation of a photonics structure; and removing material of the layer in a light signal transmitting region of the photonics structure. In one embodiment the barrier material can include silicon carbon nitride. In one embodiment the barrier material can include silicon nitride.
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公开(公告)号:US09864138B2
公开(公告)日:2018-01-09
申请号:US14987693
申请日:2016-01-04
发明人: Douglas Coolbaugh , Thomas Adam , Gerald L. Leake
IPC分类号: G02B6/13 , H01L31/105 , H01L21/02 , H01L27/146 , H01L31/028 , H01L21/203 , H01L21/205 , G02B6/12 , G02B6/132 , G02B6/134 , G02B6/136 , H01L31/0232
CPC分类号: G02B6/13 , G02B6/12002 , G02B6/132 , G02B6/1347 , G02B6/136 , G02B6/43 , G02B2006/121 , G02B2006/12104 , G02B2006/12123 , G02B2006/12169 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02639 , H01L21/2033 , H01L21/2053 , H01L27/14625 , H01L27/14629 , H01L31/022408 , H01L31/0232 , H01L31/02327 , H01L31/028 , H01L31/105 , H01L31/1808 , Y02E10/52 , Y02E10/547
摘要: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
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公开(公告)号:US11841531B2
公开(公告)日:2023-12-12
申请号:US17815962
申请日:2022-07-29
IPC分类号: G02B6/12 , H01L21/48 , H01L23/498 , H01L31/02 , H01L31/0232 , G02B6/13 , G02B6/42 , H01L23/00 , G02B6/43 , H01L27/12 , H01L21/18 , H01L21/762 , H01L25/18 , H01L25/00 , H01L25/065
CPC分类号: G02B6/12002 , G02B6/131 , G02B6/4232 , G02B6/43 , H01L21/187 , H01L21/486 , H01L23/49838 , H01L24/92 , H01L27/1266 , H01L31/02002 , H01L31/02016 , H01L31/02327 , G02B6/12 , G02B6/12004 , G02B2006/121 , G02B2006/12038 , G02B2006/12061 , G02B2006/12138 , G02B2006/12147 , G02B2006/12176 , G02B2006/12178 , H01L21/7624 , H01L21/76224 , H01L23/49816 , H01L23/49827 , H01L24/08 , H01L24/16 , H01L24/24 , H01L24/80 , H01L24/81 , H01L24/82 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L27/1203 , H01L2224/03002 , H01L2224/0401 , H01L2224/05008 , H01L2224/05025 , H01L2224/05582 , H01L2224/08225 , H01L2224/09181 , H01L2224/11002 , H01L2224/16145 , H01L2224/24105 , H01L2224/24226 , H01L2224/73204 , H01L2224/80896 , H01L2224/81191 , H01L2224/8203 , H01L2224/9202 , H01L2224/9222 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/1431 , H01L2224/94 , H01L2224/81 , H01L2224/9202 , H01L2224/82 , H01L2224/9202 , H01L2224/03 , H01L2224/9222 , H01L2224/80001 , H01L2224/81
摘要: There is set forth herein an optoelectrical device, comprising: a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, a photonics device dielectric stack, and a bond layer that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack. There is set forth herein a method comprising building an interposer base structure on a first wafer having a first substrate, including fabricating a plurality of through vias in the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layers; and building a photonics structure on a second wafer having a second substrate, including fabricating one or more photonics devices within a photonics device dielectric stack formed on the second substrate.
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公开(公告)号:US11635568B2
公开(公告)日:2023-04-25
申请号:US17809580
申请日:2022-06-29
IPC分类号: G02B6/122 , H01L21/762 , H01L21/48 , G02B6/136 , G02B6/12
摘要: There is set forth herein a photonics device. The photonics device can comprise a substrate, a conductive material formation, a dielectric stack, and a barrier layer. The photonics device can transmit a light signal.
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公开(公告)号:US11378739B2
公开(公告)日:2022-07-05
申请号:US16998736
申请日:2020-08-20
IPC分类号: G02B6/122 , H01L21/762 , H01L21/48 , G02B6/136 , G02B6/12
摘要: There is set forth herein a method including depositing a layer formed of barrier material over a conductive material formation of a photonics structure; and removing material of the layer in a light signal transmitting region of the photonics structure. In one embodiment the barrier material can include silicon carbon nitride. In one embodiment the barrier material can include silicon nitride.
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公开(公告)号:US10830952B2
公开(公告)日:2020-11-10
申请号:US16396128
申请日:2019-04-26
发明人: Douglas Coolbaugh , Thomas Adam , Gerald L. Leake
IPC分类号: G02B6/13 , H01L31/105 , H01L27/146 , H01L31/028 , H01L21/02 , H01L21/203 , H01L21/205 , H01L31/0232 , H01L31/0224 , H01L31/18 , G02B6/12 , G02B6/43 , G02B6/132 , G02B6/134 , G02B6/136
摘要: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
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公开(公告)号:US20200026003A1
公开(公告)日:2020-01-23
申请号:US16396128
申请日:2019-04-26
发明人: Douglas Coolbaugh , Thomas Adam , Gerald L. Leake
IPC分类号: G02B6/13 , H01L27/146 , H01L31/028 , H01L21/02 , H01L21/203 , H01L21/205 , H01L31/0232 , H01L31/105 , H01L31/0224 , H01L31/18 , G02B6/12
摘要: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
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公开(公告)号:US20160197111A1
公开(公告)日:2016-07-07
申请号:US14987693
申请日:2016-01-04
发明人: Douglas Coolbaugh , Thomas Adam , Gerald L. Leake
IPC分类号: H01L27/146 , H01L31/028
CPC分类号: G02B6/13 , G02B6/12002 , G02B6/132 , G02B6/1347 , G02B6/136 , G02B6/43 , G02B2006/121 , G02B2006/12104 , G02B2006/12123 , G02B2006/12169 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02639 , H01L21/2033 , H01L21/2053 , H01L27/14625 , H01L27/14629 , H01L31/022408 , H01L31/0232 , H01L31/02327 , H01L31/028 , H01L31/105 , H01L31/1808 , Y02E10/52 , Y02E10/547
摘要: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
摘要翻译: 光子结构可以在一个方面包括通过对适于传播光能的波导材料的图案化形成的一个或多个波导。 这种波导材料可以包括硅(单晶,多晶或非晶)和氮化硅中的一种或多种。
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