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    Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an RF plasma process
    3.
    发明授权
    Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an RF plasma process 失效
    在RF等离子体工艺中使用NH 3在GaAs上合成立方氮化镓的工艺

    公开(公告)号：US5834379A

    公开(公告)日：1998-11-10

    申请号：US680874

    申请日：1996-07-16

    Applicant: James R. Shealy ,  James R. Engstrom ,  Yu-Hwa Lo

    Inventor： James R. Shealy ,  James R. Engstrom ,  Yu-Hwa Lo

    IPC: C23C8/36 ,  C23C11/08

    CPC classification number: C23C8/36

    Abstract: A process for synthesizing wide band gap materials, specifically, GaN, employs plasma-assisted and thermal nitridation with NH.sub.3 to convert GaAs to GaN. Thermal assisted nitridation with NH.sub.3 can be employed for forming layers of substantial thickness (on the order of 1 micron) of cubic and hexagonal GaN on a GaAs substrate. Plasma-assisted nitridation of NH.sub.3 results in formation of predominantly cubic GaN, a form particularly useful in optoelectronic devices. Preferably, very thin GaAs membranes are employed to permit formation thereon of GaN layers of any desired thickness without concern for critical thickness constraints. The thin membranes are preferably formed either with an epitaxial bonding technique, or by undercut etching.

    Abstract translation: 用于合成宽带隙材料，特别是GaN的方法采用NH 3等离子体辅助和热氮化将GaAs转化为GaN。 使用NH 3的热辅助氮化可用于在GaAs衬底上形成基本上厚度（约1微米）的立方体和六边形GaN的层。 NH 3的等离子体辅助氮化导致主要形成立方GaN，这是在光电器件中特别有用的形式。 优选地，使用非常薄的GaAs膜以允许在其上形成任何所需厚度的GaN层，而不考虑临界厚度限制。 薄膜优选地通过外延键合技术或通过底切蚀刻来形成。

    Instrument for high throughput measurement of material physical properties and method of using same
    5.
    发明授权
    Instrument for high throughput measurement of material physical properties and method of using same 失效
    用于材料物理性能高通量测量的仪器及其使用方法

    公开(公告)号：US06936471B2

    公开(公告)日：2005-08-30

    申请号：US09779149

    申请日：2001-02-08

    Applicant: Damian Hajduk ,  Eric Carlson ,  J. Christopher Freitag ,  Oleg Kolosov ,  James R. Engstrom ,  Adam Safir ,  Ravi Srinivasan ,  Leonid Matsiev

    Inventor： Damian Hajduk ,  Eric Carlson ,  J. Christopher Freitag ,  Oleg Kolosov ,  James R. Engstrom ,  Adam Safir ,  Ravi Srinivasan ,  Leonid Matsiev

    IPC: G01N11/00 ,  B01L3/00 ,  G01N1/28 ,  G01N3/02 ,  G01N3/08 ,  G01N3/20 ,  G01N3/32 ,  G01N5/00 ,  G01N19/00 ,  G01N29/02 ,  G01N29/22 ,  G01N37/00 ,  G01N31/00 ,  G01N3/00

    CPC classification number: B01L3/5085 ,  B01J2219/00707 ,  B01J2219/00718 ,  G01N5/00 ,  G01N11/00 ,  G01N19/00 ,  G01N29/02 ,  G01N29/222 ,  G01N2203/0286 ,  G01N2291/02466 ,  G01N2291/0255 ,  G01N2291/02818 ,  G01N2291/106 ,  Y10T436/12

    Abstract: An apparatus and method for screening combinatorial libraries of materials by measuring the response of individual library members to mechanical perturbations is described. The apparatus generally includes a sample holder for containing the library members, an array of probes for mechanically perturbing individual library members, and an array of sensors for measuring the response of each of the library members to the mechanical perturbations. Library members undergoing screening make up a sample array, and individual library members constitute elements of the sample array that are confined to specific locations on the sample holder. During screening, the apparatus mechanically perturbs individual library members by displacing the sample array (sample holder) and the array of probes. Typically, all of the elements of the sample array are perturbed simultaneously, but the apparatus also can also perturb individual or groups of sample array elements sequentially. The flexible apparatus and method can screen libraries of materials based on many different bulk physical properties, including Young's modulus (flexure, uniaxial extension, biaxial compression, and shear); hardness (indentation), failure (stress and strain at failure, toughness), adhesion (tack, loop tack), and flow (viscosity, melt flow indexing, and rheology), among others.

    Abstract translation: 描述了通过测量单个文库成员对机械扰动的响应来筛选材料组合文库的装置和方法。 该装置通常包括用于容纳库构件的样本保持器，用于机械扰乱各个库构件的探针阵列，以及用于测量每个库构件对机械扰动的响应的传感器阵列。 正在进行筛选的图书馆成员组成一个样本数组，单独的图书馆成员构成了样本数组的元素，它们限于样本持有者的特定位置。 在筛选期间，设备通过移位样品阵列（样品架）和探针阵列来机械地干扰各个库成员。 通常，样本阵列的所有元素都被同时扰动，但是该装置也可以顺序扰乱单个或组的样本阵列元素。 灵活的装置和方法可以基于许多不同的体积物理性质（包括杨氏模量（挠曲，单轴延伸，双轴压缩和剪切））筛选材料库; 硬度（压痕），破坏（破坏时的应力和应变，韧性），粘附性（粘性，环粘性）和流动性（粘度，熔体流动指数和流变学）等。

    Growth of inorganic thin films using self-assembled monolayers as nucleation sites
    6.
    发明授权
    Growth of inorganic thin films using self-assembled monolayers as nucleation sites 有权
    使用自组装单层作为成核位点的无机薄膜的生长

    公开(公告)号：US07829150B2

    公开(公告)日：2010-11-09

    申请号：US11155453

    申请日：2005-06-17

    Applicant: James R. Engstrom ,  Aravind S. Killampalli ,  Paul F. Ma

    Inventor： James R. Engstrom ,  Aravind S. Killampalli ,  Paul F. Ma

    IPC: B05D1/36 ,  B05D7/00 ,  C23C16/00

    CPC classification number: H01L21/02172 ,  B05D1/185 ,  B05D1/60 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02205 ,  H01L21/31604 ,  H01L51/56

    Abstract: Systems and methods for preparing inorganic-organic interfaces using organo-transition metal complexes and self-assembled monolayers as organic surfaces. In one embodiment, a silicon wafer is cleaned and reacted with stabilized pirhana etch to provide an oxide surface. The surface is reacted with the trichlorosilyl end of alkyltrichlorosilanes to prepare self assembling monomers (SAMs). The alkyltrichlorosilanes have the general formula R1-R—SiCl3, where R1 is —OH, —NH2, —COOH, —SH, COOCH3, —CN, and R is a conjugated hydrocarbon, such as (CH2)n where n is in the range of 3 to 18. The functionalized end of the SAM can optionally modified chemically as appropriate, and is then reacted with metal-bearing species such as tetrakis(dimethylamido)titanium, Ti[N(CH3)2]4, (TDMAT) to provide a titanium nitride layer.

    Abstract translation: 使用有机过渡金属络合物和自组装单层作为有机表面制备无机 - 有机界面的系统和方法。 在一个实施例中，清洁硅晶片并与稳定的pirhana蚀刻反应以提供氧化物表面。 表面与烷基三氯硅烷的三氯甲硅烷基末端反应以制备自组装单体（SAM）。 烷基三氯硅烷具有通式R 1 -R R 1 SiCl 3，其中R 1是-OH，-NH 2，-COOH，-SH，COOCH 3，-CN，R是共轭烃，如（CH 2）n，其中n是 SAM的官能化端可以任选地适当地化学修饰，然后与含金属的物质如四（二甲基氨基）钛，Ti [N（CH 3）2] 4，（TDMAT）与 提供氮化钛层。

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