公开(公告)号：US20060076232A1

公开(公告)日：2006-04-13

申请号：US11226858

申请日：2005-09-14

申请人： Keith Miller ,  Anantha Subramani ,  Maurice Ewert ,  Tza-Jing Gung ,  Hong Yang ,  Vincent Burkhart

发明人： Keith Miller ,  Anantha Subramani ,  Maurice Ewert ,  Tza-Jing Gung ,  Hong Yang ,  Vincent Burkhart

IPC分类号： C23C14/00 ,  C23C14/32

CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

摘要： A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

摘要翻译： 一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。 该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管 机构或连接在枢转臂之间并由外部滑块移动的电缆。 磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。

公开(公告)号：US20050211548A1

公开(公告)日：2005-09-29

申请号：US10949735

申请日：2004-09-23

申请人： Tza-Jing Gung ,  Hong Yang ,  Anantha Subramani ,  Maurice Ewert ,  Keith Miller ,  Vincent Burkhart

发明人： Tza-Jing Gung ,  Hong Yang ,  Anantha Subramani ,  Maurice Ewert ,  Keith Miller ,  Vincent Burkhart

IPC分类号： C23C14/35 ,  H01J37/34

CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

摘要： A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.

摘要翻译： 一种双位磁控管，其围绕溅射靶的背面的中心轴旋转，特别是用于将阻挡材料的靶的边缘溅射到晶片上，并且清理物质再沉积在靶的中心。 在目标清洁期间，晶片偏置减小。 在一个实施例中，弧形磁控管被支撑在枢转臂上，枢转臂在固定到旋转轴的支架的端部上枢转。 弹簧偏压枢转臂，使得磁控管被推向目标中心并覆盖在目标中心上方。 提高旋转速度的离心力克服了弹簧偏压，并将磁控管移动到外部位置，长磁导管尺寸与目标边缘对齐。 机械停止可防止任何方向上的过度运动。 其他机构包括线性滑块和致动器。

公开(公告)号：US20080190760A1

公开(公告)日：2008-08-14

申请号：US11838796

申请日：2007-08-14

申请人： XIANMIN TANG ,  Arvind Sundarrajan ,  Daniel Lubben ,  Qian Luo ,  Tza-Jing Gung ,  Anantha Subramani ,  Hua Chung ,  Xinyu Fu ,  Rongjun Wang ,  Yong Cao ,  Jick Yu ,  John Forster ,  Praburam Gopalraja

发明人： XIANMIN TANG ,  Arvind Sundarrajan ,  Daniel Lubben ,  Qian Luo ,  Tza-Jing Gung ,  Anantha Subramani ,  Hua Chung ,  Xinyu Fu ,  Rongjun Wang ,  Yong Cao ,  Jick Yu ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C14/32

CPC分类号： C23C14/165 ,  C23C14/046 ,  C23C14/358 ,  C23C14/5826 ,  C23C14/584 ,  H01J37/3408 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877

摘要： An integrated copper deposition process, particularly useful for forming a copper seed layer in a narrow via prior to electrochemical plating of copper, including at least one cycle of sputter deposition of copper followed by sputter etching of the deposited copper, preferably performed in a same sputter chamber. The deposition is performed under conditions promoting high copper ionization fractions and strong wafer biasing to draw the copper ions into the via. The etching may be done with argon ions, preferably inductively excited by an RF coil around the chamber, or by copper ions, which may be formed with high target power and intense magnetron or by use of the RF coil. Two or more cycles of deposition/etch may be performed. A final flash deposition may be performed with high copper ionization and low wafer biasing.

摘要翻译： 一种集成的铜沉积工艺，特别适用于在铜的电化学电镀之前在窄通孔中形成铜籽晶层，包括至少一个铜的溅射沉积循环，然后溅射蚀刻沉积的铜，优选在相同的溅射 房间。 沉积在促进高铜离子化分数和强晶片偏置的条件下进行以将铜离子吸入通孔。 蚀刻可以用氩离子进行，优选地通过围绕室的RF线圈进行感应激励，或者通过可以用高目标功率和强磁控管形成的铜离子或通过使用RF线圈进行。 可以执行两个或更多个沉积/蚀刻循环。 最终的闪蒸沉积可以用高铜离子化和低晶片偏压进行。

公开(公告)号：US09396933B2

公开(公告)日：2016-07-19

申请号：US13868385

申请日：2013-04-23

申请人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandia ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

发明人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandia ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC分类号： H01L21/02 ,  H01L29/205 ,  H01L33/00 ,  C30B23/02 ,  C30B29/40 ,  H01L33/12

CPC分类号： H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

摘要翻译： 描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。 还描述了PVD AlN缓冲层的工艺条件。 还描述了PVD氮化铝缓冲层的基板预处理。 在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。 该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

公开(公告)号：US20120252207A1

公开(公告)日：2012-10-04

申请号：US13174692

申请日：2011-06-30

申请人： Yu Lei ,  Xinyu Fu ,  Anantha Subramani ,  Seshadri Ganguli ,  Srinivas Gandikota

发明人： Yu Lei ,  Xinyu Fu ,  Anantha Subramani ,  Seshadri Ganguli ,  Srinivas Gandikota

IPC分类号： H01L21/283 ,  B82Y40/00

CPC分类号： H01L21/02697 ,  B82Y40/00 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.

摘要翻译： 本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。 在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及 重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。 该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。

公开(公告)号：US20090260982A1

公开(公告)日：2009-10-22

申请号：US12423444

申请日：2009-04-14

申请人： Martin Lee Riker ,  Keith A. Miller ,  Anantha Subramani

发明人： Martin Lee Riker ,  Keith A. Miller ,  Anantha Subramani

IPC分类号： C23C14/34

CPC分类号： C23C16/4585 ,  C23C14/34 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/3408 ,  H01J37/3441

摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

摘要翻译： 本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。 在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。 下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁 衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带 基板支撑的边缘。

公开(公告)号：US06589407B1

公开(公告)日：2003-07-08

申请号：US08862537

申请日：1997-05-23

申请人： Anantha Subramani ,  Ashok K. Das ,  Leif E. DeLaurentis ,  Michael Rosenstein

发明人： Anantha Subramani ,  Ashok K. Das ,  Leif E. DeLaurentis ,  Michael Rosenstein

IPC分类号： C23C1434

CPC分类号： H01J37/32623 ,  H01J37/3441

摘要： An aluminum deposition shield substantially improves transfer of radiated heat from within the vacuum chamber, in comparison to a stainless steel deposition shield. The aluminum deposition shield remains cooler during wafer processing and assists in cooling the chamber components.

摘要翻译： 与不锈钢沉积屏蔽相比，铝沉积屏蔽件显着地改善了来自真空室内的辐射热传递。 铝沉积屏蔽在晶片加工过程中保持冷却，有助于冷却腔室部件。

公开(公告)号：US06406599B1

公开(公告)日：2002-06-18

申请号：US09703738

申请日：2000-11-01

申请人： Anantha Subramani ,  Umesh Kelkar ,  Jianming Fu ,  Praburam Gopalraja

发明人： Anantha Subramani ,  Umesh Kelkar ,  Jianming Fu ,  Praburam Gopalraja

IPC分类号： C23C1434

CPC分类号： H01J37/3423 ,  H01J37/3405 ,  H01J37/3455

摘要： A plasma sputter reactor including a target with an annular vault formed in a surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target. The lower frame supports the target while the upper frame supports the magnetron, including the magnets adjacent the lower frame. The inner magnet assembly has a cooling water passage passing to the bottom of the inner magnet to inject the cooling water to the bottom of the well. The cooling water is stirred by the rotating roof magnetron and leaves the water bath through inlets formed in the bottom frame but exits from the top frame.

摘要翻译： 一种等离子体溅射反应器，包括具有环形拱顶的靶，该环形拱顶形成在面向待溅射涂层的晶片的表面上，并且具有内侧壁和外侧壁以及其上方的屋顶。 在管状内侧壁之间的靶的后部形成有孔。 与靶相关联的磁铁包括设置在外侧壁外侧的一个垂直极性的固定环形磁体组件，位于内侧壁后面的另一极性的可旋转管状磁体组件，以及可在屋顶上方旋转的小型不平衡磁控管 关于目标的中心轴。 下框架支撑目标，而上框架支撑磁控管，包括与下框架相邻的磁体。 内部磁体组件具有通过内部磁体底部的冷却水通道，以将冷却水注入到井的底部。 冷却水由旋转屋顶磁控管搅拌，并通过形成在底架中的入口离开水浴，但是从顶架离开。

公开(公告)号：US20160035937A1

公开(公告)日：2016-02-04

申请号：US14884251

申请日：2015-10-15

申请人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

发明人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC分类号： H01L33/12 ,  H01L29/20 ,  H01L33/00 ,  H01L31/18

CPC分类号： H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

摘要： Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

摘要翻译： 描述了用于GaN基光电子和电子器件的氧控PVD PVD缓冲器。 还描述了以氧控制方式形成GaN基光电子和电子器件的PVD AlN缓冲液的方法。 在一个示例中，形成用于GaN基光电子或电子器件的氮化铝（AlN）缓冲层的方法包括在衬底上方的AlN层的反应溅射，所述反应性溅射涉及使物理气相沉积 （PVD）室，其含有含氮气体或基于含氮气体的等离子体。 该方法还包括将氧气掺入到AlN层中。

公开(公告)号：US09224582B2

公开(公告)日：2015-12-29

申请号：US11947459

申请日：2007-11-29

申请人： John Forster ,  Anantha Subramani ,  Wei D. Wang

发明人： John Forster ,  Anantha Subramani ,  Wei D. Wang

IPC分类号： C23C14/34 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01J37/32477 ,  C23C14/34 ,  H01J37/32495 ,  H01L21/02043 ,  H01L21/67005

摘要： A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing.

摘要翻译： 描述了一种用于减少等离子体处理室中的颗粒污染的方法和装置。 在一个实施例中，提供了一种粘贴盘，其包括高电阻率材料的盘形基底，其具有施加到基部的顶表面的导电粘贴材料层，使得粘贴材料层部分地覆盖基底的顶表面 基础。 溅射蚀刻粘贴盘以在等离子体处理室的内表面上的广泛区域上沉积导电粘贴材料，同时最小化用于在衬底处理期间优化溅射蚀刻工艺的介电部件上的沉积。