Manufacturing method of semiconductor structure
    2.
    发明授权
    Manufacturing method of semiconductor structure 有权
    半导体结构的制造方法

    公开(公告)号:US09397138B2

    公开(公告)日:2016-07-19

    申请号:US14613231

    申请日:2015-02-03

    Applicant: XINTEC INC.

    Inventor: Chien-Hung Liu

    Abstract: A manufacturing method of a semiconductor structure includes the following steps. A carrier and a dam element are provided, and the dam element is adhered to the carrier by a temporary bonding layer. The dam element is bonded on the wafer. A first isolation layer, a redistribution layer, a second isolation layer, and a conductive structure are formed on the wafer in sequence. The carrier, the dam element and the wafer are diced to form a semiconductor element. The semiconductor element is disposed on a printed circuit board, such that the conductive structure is electrically connected to the printed circuit board. An adhesion force of the temporary bonding layer is eliminated to remove the carrier. A lens assembly is disposed on the printed circuit board, such that the semiconductor element without the carrier is located in the lens assembly.

    Abstract translation: 半导体结构的制造方法包括以下步骤。 提供了载体和坝元件,并且坝元件通过临时粘合层粘附到载体上。 坝体结合在晶片上。 在晶片上依次形成第一隔离层,再分配层,第二隔离层和导电结构。 将载体,坝元件和晶片切割成半导体元件。 半导体元件设置在印刷电路板上,使得导电结构电连接到印刷电路板。 消除了临时粘合层的粘合力以除去载体。 透镜组件设置在印刷电路板上,使得没有载体的半导体元件位于透镜组件中。

    Chip package and method for forming the same

    公开(公告)号:US10157811B2

    公开(公告)日:2018-12-18

    申请号:US15618054

    申请日:2017-06-08

    Applicant: XINTEC INC.

    Inventor: Chien-Hung Liu

    Abstract: A chip package includes a chip, a dam layer, a permanent adhesive layer, a support, a buffer layer, a redistribution layer, a passivation layer, and a conducting structure. A conducting pad and a sensing device of the chip are located on a first surface of a substrate of the chip, and the conducting pad protrudes from the side surface of the substrate. The dam layer surrounds the sensing device. The permanent adhesive layer is between the support and the substrate. The support and the permanent adhesive layer have a trench to expose the conducting pad. The buffer layer is located on the support. The redistribution layer is located on the buffer layer and on the support, the permanent adhesive layer, and the conducting pad facing the trench. The passivation layer covers the redistribution layer, the buffer layer, and the conducting pad.

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