公开(公告)号：US20060038221A1

公开(公告)日：2006-02-23

申请号：US11206856

申请日：2005-08-19

申请人： Jung-hyun Lee ,  Young-soo Park

发明人： Jung-hyun Lee ,  Young-soo Park

IPC分类号： H01L29/04

CPC分类号： H01L45/122 ,  B82Y10/00 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： A resistive multilayer device employs a first layer comprising a first material that is electrically conducting, a second layer disposed on the first layer, wherein the second layer comprises a second material having a state that is switchable between an antiferromagnetic state and a paramagnetic state by passing current through the second material, a third layer disposed on the second layer, wherein the third layer comprises a third material that is electrically conducting and a fourth dielectric layer. The second layer has a resistance in the antiferromagnetic state that is different from its resistance in the paramagnetic state, and the state of the second material is retained in an absence of applied power. The resistive multilayer device can be formed as part of a memory cell of a non-volatile memory, wherein information is stored in the memory cell based upon the state of the second material.

摘要翻译： 电阻式多层器件采用包括导电的第一材料的第一层，设置在第一层上的第二层，其中第二层包括第二材料，该第二材料具有在反铁磁性状态和顺磁性状态之间可通过通过 通过第二材料的电流，设置在第二层上的第三层，其中第三层包括导电的第三材料和第四介电层。 第二层具有与其顺磁性状态下的电阻不同的反铁磁性状态的电阻，并且在不施加电力的情况下保持第二材料的状态。 电阻性多层器件可以形成为非易失性存储器的存储单元的一部分，其中基于第二材料的状态将信息存储在存储单元中。

公开(公告)号：US20050272200A1

公开(公告)日：2005-12-08

申请号：US11136456

申请日：2005-05-25

申请人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

发明人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

IPC分类号： C01B33/00 ,  C01G29/00 ,  C04B35/475 ,  C23C14/06 ,  C23C16/42 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/51 ,  H01L21/473

CPC分类号： H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

公开(公告)号：US20050042836A1

公开(公告)日：2005-02-24

申请号：US10930953

申请日：2004-09-01

申请人： Jung-hyun Lee ,  Yo-sep Min ,  Young-jin Cho

发明人： Jung-hyun Lee ,  Yo-sep Min ,  Young-jin Cho

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/06 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L21/20

CPC分类号： H01L28/56 ,  H01L21/3141 ,  H01L21/321 ,  H01L27/0629 ,  H01L28/55 ,  H01L28/65

摘要： A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In the capacitor of the present invention, oxidization of the lower electrode may be suppressed, and excellent characteristics of the thin dielectric layer may be maintained.

摘要翻译： 一种用于半导体器件的电容器，制造该电容器的方法以及采用该电容器的电子器件，其中该电容器包括由铂族金属形成的上下电极; 设置在上电极和下电极之间的薄介电层; 以及设置在下电极和薄电介质层之间的缓冲层，缓冲层包括第3,4或13族的金属氧化物。在本发明的电容器中，可以抑制下电极的氧化，优异的 可以保持薄介电层的特性。

公开(公告)号：US06752869B2

公开(公告)日：2004-06-22

申请号：US10160111

申请日：2002-06-04

申请人： Jung-hyun Lee ,  Dae-sig Kim ,  Yo-sep Min ,  Young-jin Cho

发明人： Jung-hyun Lee ,  Dae-sig Kim ,  Yo-sep Min ,  Young-jin Cho

IPC分类号： C30B2504

CPC分类号： C23C16/45542 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45553 ,  C23C16/5096

摘要： An atomic layer deposition (ALD) method, whereby an organometallic complex with a &bgr;-diketone ligand is chemically adsorbed onto a substrate and oxidized by activated oxygen radicals to deposit an atomic metal oxide layer on the substrate, uses reactive oxygen radicals generated using plasma and an organometallic complex having a &bgr;-diketone ligand as a precursor, which could not be used in a thermal ALD method using oxygen or water as an oxidizing agent, to address and solve the problem of the removal of organic substances using organometallic complexes with &bgr;-diketone ligands, thereby enabling diversification of the precursors for ALD and formation of excellent oxide films at low temperatures.

摘要翻译： 原子层沉积（ALD）方法，其中具有β-二酮配体的有机金属络合物被化学吸附到基底上并被活性氧自由基氧化以在基底上沉积原子金属氧化物层，使用使用等离子体产生的活性氧自由基， 具有β-二酮配体作为前体的有机金属配合物，其不能用于使用氧或水作为氧化剂的热ALD方法，以解决和解决使用有机金属络合物除去有机物质的问题， 二酮配体，从而使ALD前体多样化，并在低温下形成优异的氧化膜。

公开(公告)号：US08513634B2

公开(公告)日：2013-08-20

申请号：US12457539

申请日：2009-06-15

申请人： Jung-hyun Lee ,  Sung-ho Park ,  Myoung-jae Lee ,  Young-soo Park

发明人： Jung-hyun Lee ,  Sung-ho Park ,  Myoung-jae Lee ,  Young-soo Park

IPC分类号： H01L29/02

CPC分类号： H01L27/2436 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0009 ,  G11C2213/32 ,  H01L27/10852 ,  H01L27/112 ,  H01L27/115 ,  H01L28/40 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146

摘要： A data storage and a semiconductor memory device including the same are provided, the data storage including a lower electrode, a first discharge prevention layer stacked on the lower electrode, a phase-transition layer on the first discharge prevention layer, a second discharge prevention layer stacked on the phase-transition layer, and an upper electrode stacked on the second discharge prevention layer. The phase transition layer includes oxygen and exhibits two different resistance characteristics depending on whether an insulating property thereof changed. The first and second discharge prevention layers block discharge of the oxygen from the phase transition layer.

公开(公告)号：US08426837B2

公开(公告)日：2013-04-23

申请号：US12073666

申请日：2008-03-07

申请人： Myoung-jae Lee ,  Young-soo Park ,  Jung-hyun Lee ,  Soon-won Hwang ,  Seok-jae Chung ,  Chang-soo Lee

发明人： Myoung-jae Lee ,  Young-soo Park ,  Jung-hyun Lee ,  Soon-won Hwang ,  Seok-jae Chung ,  Chang-soo Lee

IPC分类号： H01L29/02 ,  H01L29/06 ,  H01L47/00

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/122 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

摘要： Provided is a resistive memory device and a method of manufacturing the resistive memory device that includes a bottom electrode, an insulating layer that is formed on the bottom electrode and has a hole that exposes the bottom electrode, a resistance layer and an intermediate layer which are formed in the hole, a switch structure formed on a surface of the intermediate layer, and an upper electrode formed on the switch structure.

摘要翻译： 提供了一种电阻式存储器件和制造该电阻式存储器件的方法，该电阻式存储器件包括底部电极，形成在底部电极上并具有暴露底部电极的孔的绝缘层，电阻层和中间层， 形成在所述孔中，形成在所述中间层的表面上的开关结构和形成在所述开关结构上的上电极。

公开(公告)号：US08193569B2

公开(公告)日：2012-06-05

申请号：US11508991

申请日：2006-08-24

申请人： Jung-hyun Lee

发明人： Jung-hyun Lee

IPC分类号： H01L29/76

CPC分类号： H01L45/145 ,  H01L27/24 ,  H01L45/04

摘要： A non-volatile semiconductor memory device having an ion conductive layer, and methods of fabricating and operating the same are disclosed. The non-volatile memory device may include a substrate, a switching element formed in the substrate, and a storage node connected to the switching element, the storage node may include a lower electrode connected to the switching element, and used as an ion source; a data storage layer formed on the lower electrode, a portion thereof being spaced from the lower electrode; a side electrode spaced from the lower electrode, a side surface thereof being connected to a portion of the data storage layer spaced from the lower electrode; and an upper electrode formed on the data storage layer, or may include a lower electrode connected to the switching element, and used as an ion source; and a data storage layer formed on the lower electrode; an upper electrode formed on the data storage layer.

摘要翻译： 公开了具有离子传导层的非易失性半导体存储器件及其制造和操作方法。 非易失性存储器件可以包括衬底，形成在衬底中的开关元件和连接到开关元件的存储节点，存储节点可以包括连接到开关元件的下电极，并用作离子源; 形成在所述下电极上的数据存储层，其一部分与所述下电极间隔开; 与所述下电极间隔开的侧电极，其侧表面与所述数据存储层的与所述下电极间隔开的部分连接; 以及形成在数据存储层上的上电极，或者可以包括连接到开关元件的下电极，并用作离子源; 和形成在下电极上的数据存储层; 形成在数据存储层上的上电极。

公开(公告)号：US08168469B2

公开(公告)日：2012-05-01

申请号：US12923429

申请日：2010-09-21

申请人： Jung-hyun Lee ,  Sung-kyu Choi ,  Kyu-sik Kim

发明人： Jung-hyun Lee ,  Sung-kyu Choi ,  Kyu-sik Kim

IPC分类号： H01L29/02

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1683

摘要： A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part electrically connected to the switching element. In the data storage part, a lower electrode is connected to the switching element, and an insulating layer is formed on the lower electrode to a predetermined thickness. The insulating layer has a contact hole exposing the lower electrode. A data storage layer is filled in the contact hole and the data storage layer is formed of transition metal oxide. An upper electrode is formed on the insulating layer and the data storage layer.

摘要翻译： 提供了使用电阻材料的非易失性存储器件及其制造方法。 非易失性存储器件包括开关元件和电连接到开关元件的数据存储部件。 在数据存储部分中，下电极连接到开关元件，并且在下电极上形成预定厚度的绝缘层。 绝缘层具有暴露下电极的接触孔。 数据存储层填充在接触孔中，数据存储层由过渡金属氧化物形成。 在绝缘层和数据存储层上形成上电极。

公开(公告)号：US08143660B2

公开(公告)日：2012-03-27

申请号：US10797046

申请日：2004-03-11

申请人： Jung-hyun Lee ,  Burn-seok Seo ,  Yo-sep Min ,  Young-jin Cho

发明人： Jung-hyun Lee ,  Burn-seok Seo ,  Yo-sep Min ,  Young-jin Cho

IPC分类号： H01L27/108

CPC分类号： H01L21/0228 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02304 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645

摘要： Provided are a method for manufacturing a high k-dielectric oxide film, a capacitor having a dielectric film formed using the method, and a method for manufacturing the capacitor. A high k-dielectric oxide film is manufactured by (a) loading a semiconductor substrate in an ALD apparatus, (b) depositing a reaction material having a predetermined composition rate of a first element and a second element on the semiconductor substrate, and (c) forming a first high k-dielectric oxide film having the two elements on the semiconductor substrate by oxidizing the reaction material such that the first element and the second element are simultaneously oxidized. In this method, the size of an apparatus is reduced, productivity is enhanced, and manufacturing costs are lowered. Further, the high k-dielectric oxide film exhibits high dielectric constant and low leakage current and trap density. Thus, a capacitor including the high k-dielectric oxide film as a dielectric film also exhibits low leakage current and trap density.

摘要翻译： 提供一种制造高k电介质氧化膜的方法，具有使用该方法形成的电介质膜的电容器和制造该电容器的方法。 （a）在ALD装置中加载半导体衬底，（b）在半导体衬底上沉积具有第一元素和第二元素的预定组成比的反应材料，制备高k电介质氧化物膜，和（c ）通过氧化反应材料形成具有两个元件的第一高k电介质氧化物膜，以使第一元件和第二元件同时被氧化。 在该方法中，装置的尺寸减小，生产率提高，制造成本降低。 此外，高k电介质氧化膜表现出高的介电常数和低的漏电流和阱密度。 因此，包括作为电介质膜的高k电介质氧化膜的电容器也具有低泄漏电流和阱密度。

公开(公告)号：US07985961B2

公开(公告)日：2011-07-26

申请号：US12003133

申请日：2007-12-20

申请人： Sang-jun Choi ,  Jung-hyun Lee ,  Chang-soo Lee

发明人： Sang-jun Choi ,  Jung-hyun Lee ,  Chang-soo Lee

IPC分类号： H01L47/00

CPC分类号： H01L45/1226 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/142 ,  H01L45/144 ,  H01L45/1675

摘要： Example embodiments may provide resistive random access memory devices and/or methods of manufacturing resistive random access memory devices. Example embodiment resistive random access memory devices may include a switching device and/or a storage node connected to the switching device. The storage node may include a stack structure including a plurality of resistance change layers separated from one another and first and second electrodes each on a side wall of the stack structure. The resistance change layers may be connected to the first and the second electrodes in parallel and/or may have different switching voltages from each other.

摘要翻译： 示例性实施例可以提供电阻性随机存取存储器件和/或制造电阻随机存取存储器件的方法。 示例性实施例电阻随机存取存储器设备可以包括连接到交换设备的交换设备和/或存储节点。 存储节点可以包括堆叠结构，其包括彼此分离的多个电阻变化层以及每个在堆叠结构的侧壁上的第一和第二电极。 电阻变化层可以并联连接到第一和第二电极和/或可以具有彼此不同的开关电压。