公开(公告)号：US06514782B1

公开(公告)日：2003-02-04

申请号：US09470450

申请日：1999-12-22

申请人： Jonathan J. Wierer, Jr. ,  Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar

发明人： Jonathan J. Wierer, Jr. ,  Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar

IPC分类号： H01L2100

CPC分类号： H01L33/405 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/60 ,  H01L33/62 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2924/01322 ,  H01L2924/00

摘要： The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

摘要翻译： 本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。 大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。 可以使用底座来提供LED管芯和封装之间的电连接和热连接。 底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。 整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。 最后，器件可以包括高折射率（n> 1.8）的覆盖层。

公开(公告)号：US06420199B1

公开(公告)日：2002-07-16

申请号：US09923711

申请日：2001-08-06

申请人： Carrie Carter Coman ,  R. Scott Kern ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Arto V. Nurmikko ,  Yoon-Kyu Song

发明人： Carrie Carter Coman ,  R. Scott Kern ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Arto V. Nurmikko ,  Yoon-Kyu Song

IPC分类号： H05L2120

CPC分类号： H01L33/105 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/465 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/1838 ,  H01S5/34333 ,  Y10S438/977

摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术来实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。

公开(公告)号：US06307218B1

公开(公告)日：2001-10-23

申请号：US09196928

申请日：1998-11-20

申请人： Daniel A. Steigerwald ,  Serge L Rudaz ,  Kyle J. Thomas ,  Steven D. Lester ,  Paul S. Martin ,  William R. Imler ,  Robert M. Fletcher ,  Fred A. Kish, Jr. ,  Steven A. Maranowski

发明人： Daniel A. Steigerwald ,  Serge L Rudaz ,  Kyle J. Thomas ,  Steven D. Lester ,  Paul S. Martin ,  William R. Imler ,  Robert M. Fletcher ,  Fred A. Kish, Jr. ,  Steven A. Maranowski

IPC分类号： H01L3300

CPC分类号： H01L33/38 ,  H01L33/20

摘要： A light emitting device includes a heterojunction having a p-type layer and an n-type layer. The n-electrode is electrically connected to the n-type layer while the p-electrode is electrically connected to the p-type layer. The p and n-electrodes are positioned to form a region having uniform light intensity.

摘要翻译： 发光器件包括具有p型层和n型层的异质结。 n电极与n型层电连接，而p电极与p型层电连接。 p和n电极被定位成形成具有均匀光强度的区域。

公开(公告)号：US5793062A

公开(公告)日：1998-08-11

申请号：US962944

申请日：1997-10-24

申请人： Fred A. Kish, Jr. ,  Stephen A. Stockman

发明人： Fred A. Kish, Jr. ,  Stephen A. Stockman

IPC分类号： H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/00 ,  H01S3/08

CPC分类号： H01L33/10 ,  H01L21/24 ,  H01L33/20 ,  H01L33/22

摘要： Methods for the fabrication of TS LED chips with improved light extraction and optics, particularly increased top surface emission, and the TS LEDs so fabricated are described. Non-absorbing DBRs within the chip permit the fabrication of the LEDs. The transparent DBRs redirect light away from absorbing regions such as contacts within the chip, increasing the light extraction efficiency of the LED. The non-absorbing DBRs can also redirect light toward the top surface of the chip, improving the amount of top surface emission and the on-axis intensity of the packaged LED. These benefits are accomplished with optically non-absorbing layers, maintaining the advantages of a TS LED, which advantages include .about.6 light escape cones, and improved multiple pass light extraction.

公开(公告)号：US09170438B2

公开(公告)日：2015-10-27

申请号：US13545964

申请日：2012-07-10

申请人： Peter W. Evans ,  Scott Corzine ,  Pavel V. Studenkov ,  Mehrdad Ziari ,  Fred A. Kish, Jr.

发明人： Peter W. Evans ,  Scott Corzine ,  Pavel V. Studenkov ,  Mehrdad Ziari ,  Fred A. Kish, Jr.

IPC分类号： G02B6/34 ,  G02F1/025 ,  G02B6/00 ,  G02B6/126

CPC分类号： G02F1/025 ,  G02B6/00 ,  G02B6/126

摘要： A device may include a number of optical waveguides, each of which being spaced from one another. The optical waveguides may each include at least one curved section and widths of the curved sections of the optical waveguides may be selected to reduce polarization conversion of light traversing the birefringent optical waveguides.

摘要翻译： 器件可以包括多个光波导，每个光波导彼此间隔开。 光波导可以各自包括至少一个弯曲部分，并且可以选择光波导的弯曲部分的宽度以减少穿过双折射光波导的光的偏振转换。

公开(公告)号：US08964284B2

公开(公告)日：2015-02-24

申请号：US13449515

申请日：2012-04-18

申请人： Mehrdad Ziari ,  Scott Corzine ,  Masaki Kato ,  Michael Francis Van Leeuwen ,  Radhakrishnan L. Nagarajan ,  Matthew L. Mitchell ,  Fred A. Kish, Jr.

发明人： Mehrdad Ziari ,  Scott Corzine ,  Masaki Kato ,  Michael Francis Van Leeuwen ,  Radhakrishnan L. Nagarajan ,  Matthew L. Mitchell ,  Fred A. Kish, Jr.

IPC分类号： H04S5/00

CPC分类号： H04B10/2914 ,  H01S5/4087 ,  H01S5/5009 ,  H01S5/5036 ,  H01S5/5045 ,  H04J14/02 ,  H04J14/0221 ,  H04J14/06

摘要： A semiconductor optical amplifier module may include a beam splitter to split an optical signal into two polarization optical signals including a first polarization optical signal with a Transverse Magnetic (TM) polarization provided along a first path of two paths, and a second polarization optical signal with a Transverse Electric (TE) polarization provided along a second path of the two paths; a first rotator to rotate the TM polarization of the first polarization optical signal to TE polarization; a first semiconductor optical amplifier to amplify the rotated first polarization optical signal to output a first resultant optical signal; a second semiconductor optical amplifier to amplify the second polarization optical signal; and a second rotator to rotate the polarization of the amplified second polarization optical signal to output a second resultant optical signal; and a beam combiner to combine the first resultant optical signal and the second resultant optical signal.

摘要翻译： 半导体光放大器模块可以包括光束分离器，以将光信号分成两个偏振光信号，包括具有沿着两条路径的第一路径提供的横向磁（TM）偏振的第一偏振光信号，以及第二偏振光信号， 沿着两个路径的第二路径提供的横向电（TE）极化; 第一旋转器，用于将第一偏振光信号的TM偏振旋转为TE极化; 第一半导体光放大器，用于放大旋转的第一偏振光信号以输出第一合成光信号; 第二半导体光放大器，用于放大第二偏振光信号; 以及第二旋转器，用于旋转放大的第二偏振光信号的偏振，以输出第二合成光信号; 以及光束组合器，以组合第一合成光信号和第二合成光信号。

公开(公告)号：US08155531B2

公开(公告)日：2012-04-10

申请号：US12467495

申请日：2009-05-18

申请人： Sanjeev Murthy ,  Mark J. Missey ,  Mehrdad Ziari ,  Fred A. Kish, Jr. ,  Masaki Kato ,  Radhakrishnan L. Nagarajan

发明人： Sanjeev Murthy ,  Mark J. Missey ,  Mehrdad Ziari ,  Fred A. Kish, Jr. ,  Masaki Kato ,  Radhakrishnan L. Nagarajan

IPC分类号： H04B10/00

CPC分类号： H04B10/66 ,  H04B10/506

摘要： Photonic integrated circuits (PICs) may include transmit and receive PICs that include individually tunable optical elements. In one implementation, a device may include a number of optical elements that form a number of optical channels. Tuners may be used to modify a property associated with the at least one of the optical elements where the modified properties of the optical elements adjust a frequency grid of the optical channels.

摘要翻译： 光子集成电路（PIC）可以包括发射和接收包括单独可调光学元件的PIC。 在一个实现中，设备可以包括形成多个光学通道的多个光学元件。 可以使用调谐器来修改与至少一个光学元件相关联的属性，其中光学元件的修改的属性调整光学通道的频率网格。

公开(公告)号：US07491565B2

公开(公告)日：2009-02-17

申请号：US11330209

申请日：2006-01-10

申请人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Paul S Martin

发明人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Paul S Martin

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01S5/0216 ,  H01S5/0421 ,  H01S5/18341 ,  H01S5/32341

摘要： Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.

摘要翻译： 描述了从蓝宝石生长衬底去除发光层所产生的用于制造InAlGaN发光器件的器件和技术。 在几个实施例中，描述了用于制造导致改进的性能和/或成本效益的垂直InAlGaN发光二极管结构的技术。 此外，采用金属结合，衬底剥离和新颖的RIE器件分离技术来有效地在选择用于其导热性和易于制造的衬底上生产垂直GaN LED。

公开(公告)号：US06280523B1

公开(公告)日：2001-08-28

申请号：US09245448

申请日：1999-02-05

申请人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  R. Scott Kern ,  Michael R. Krames ,  Paul S. Martin

发明人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  R. Scott Kern ,  Michael R. Krames ,  Paul S. Martin

IPC分类号： C30B2512

CPC分类号： H01L33/465 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/105 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/1838 ,  H01S5/32341 ,  Y10S117/915

摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。

公开(公告)号：US06222207B1

公开(公告)日：2001-04-24

申请号：US09317647

申请日：1999-05-24

申请人： Carrie Carter-Coman ,  Gloria Hofler ,  Fred A. Kish, Jr.

发明人： Carrie Carter-Coman ,  Gloria Hofler ,  Fred A. Kish, Jr.

IPC分类号： H01L3300

CPC分类号： H01L33/405

摘要： A solderable light-emitting diode (LED) chip and a method of fabricating an LED lamp embodying the LED chip utilize a diffusion barrier that appreciably blocks molecular migration between two different layers of the LED chip during high temperature processes. In the preferred embodiment, the two different layers of the LED chip are a back reflector and a solder layer. The prevention of intermixing of the materials in the back reflector and the solder layer impedes degradation of the back reflector with respect to its ability to reflect light emitted by the LED. The LED chip includes a high power AlInGaP LED or other type of LED, a back reflector, a diffusion barrier and a solder layer. Preferably, the back reflector is composed of silver (Ag) or Ag alloy and the solder layer is made of indium (In), lead (Pb), gold (Au), tin (Sn), or their alloy and eutectics. In a first embodiment, the diffusion layer is made of nickel (Ni) or nickel-vanadium (NiV). In a second embodiment of the invention, the diffusion barrier is made of titanium-tungsten-nitride (TiW:N). In addition to preventing the intermixing of the In of the solder layer with the Ag of the back reflector, the diffusion layer prevents degradation of the Ag reflective properties in the back reflector upon exposure to air. In an alternative embodiment, the diffusion layer is made of a non-conductive material.

摘要翻译： 可焊接的发光二极管（LED）芯片和制造实施LED芯片的LED灯的方法利用在高温过程中可以明显阻挡LED芯片的两个不同层之间的分子迁移的扩散阻挡层。 在优选实施例中，LED芯片的两个不同层是后反射器和焊料层。 防止背反射器和焊料层中的材料的混合相对于其反射由LED发射的光的能力而妨碍背反射器的劣化。 LED芯片包括高功率AlInGaP LED或其他类型的LED，后反射器，扩散阻挡层和焊料层。 优选地，背反射器由银（Ag）或Ag合金构成，并且焊料层由铟（In），铅（Pb），金（Au），锡（Sn）或其合金和共晶体制成。 在第一实施例中，扩散层由镍（Ni）或镍 - 钒（NiV）制成。 在本发明的第二实施例中，扩散阻挡层由钛 - 氮化钨（TiW：N）制成。 除了防止焊料层的In与后反射体的Ag的混合之外，扩散层防止了暴露于空气中后反射器中的Ag反射特性的劣化。 在替代实施例中，扩散层由非导电材料制成。