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    DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS
    96.
    发明申请
    DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS 审中-公开
    非极性III型氮化物薄膜中的分离减少

    公开(公告)号：US20120068184A1

    公开(公告)日：2012-03-22

    申请号：US13308362

    申请日：2011-11-30

    申请人： Michael D. Craven ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    发明人： Michael D. Craven ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： H01L29/04 ,  H01L21/20

    CPC分类号： H01L21/0237 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

    摘要： Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

    摘要翻译： 非极性III族氮化物种子层的横向外延生长减少了非极性III族氮化物薄膜中的穿透位错。 首先，将薄的图案化电介质掩模施加到种子层。 其次，进行选择性外延再生长以实现基于图案化掩模的横向过度生长。 在再生长时，非极性III族氮化物膜在垂直于垂直生长方向的方向上横向过度生长掩模之前，首先垂直于介电掩模中的开口生长。 通过（1）掩模阻止位错垂直进入生长膜的扩散，以及（2）通过从垂直向侧向生长的过渡的位错弯曲，使得穿越位错在过度生长的区域中减少。

    Photoelectrochemical etching of P-type semiconductor heterostructures
    98.
    发明授权
    Photoelectrochemical etching of P-type semiconductor heterostructures 有权
    P型半导体异质结构的光电化学蚀刻

    公开(公告)号：US08053264B2

    公开(公告)日：2011-11-08

    申请号：US12464723

    申请日：2009-05-12

    申请人： Adele Tamboli ,  Evelyn Lynn Hu ,  Mathew C. Schmidt ,  Shuji Nakamura ,  Steven P. DenBaars

    发明人： Adele Tamboli ,  Evelyn Lynn Hu ,  Mathew C. Schmidt ,  Shuji Nakamura ,  Steven P. DenBaars

    IPC分类号： H01L21/3213

    CPC分类号： H01L21/30617 ,  H01L29/2003 ,  H01L33/0075

    摘要： A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer.

    摘要翻译： 通过提供用于孔朝向待蚀刻的p型盖层的表面移动的驱动力，简单有效地对p型半导体层进行光电化学（PEC）蚀刻的方法，其中p型覆盖层为 在异质结构上，异质结构从异质结构内部产生的内部偏压提供驱动力; 在异质结构的单独区域中产生电子 - 空穴对，而不是要蚀刻的表面; 并使用蚀刻剂溶液蚀刻p型层的表面。

    Standing transparent mirrorless light emitting diode
    99.
    发明授权
    Standing transparent mirrorless light emitting diode 有权
    站立透明无反射镜发光二极管

    公开(公告)号：US08022423B2

    公开(公告)日：2011-09-20

    申请号：US12716650

    申请日：2010-03-03

    申请人： Shuji Nakamura ,  Steven P. DenBaars

    发明人： Shuji Nakamura ,  Steven P. DenBaars

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/54 ,  H01L33/507 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    摘要： An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element comprising an epoxy, glass, silicon or other material molded into an inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. In addition, the present invention stands the LED on end, i.e., rotates the position of the LED within the shaped optical element by approximately 90° as compared to a conventional LED, in order to extract light more effectively from the LED. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e., creating microcones) may also assist in light extraction, as well as minimizing internal reflections.

    摘要翻译： 一种（Al，Ga，In）N发光二极管（LED），其中可以在进入成形光学元件之前随后将其提取到空气中，从LED的一个或多个表面提取多方向光。 特别地，（Al，Ga，In）N和透明接触层（例如ITO或ZnO）嵌入或者与包含模制成倒圆锥形的环氧树脂，玻璃，硅或其它材料的成形光学元件组合， 其中进入倒锥体的大部分光线处于临界角内并被提取。 此外，为了从LED更有效地提取光，本发明将LED结束，即将LED在成形光学元件内的位置与常规LED相比旋转大约90°。 本发明还通过消除反射镜和/或镜像表面来最小化LED内的内部反射，以便通过LED的发射层（或有源层）使LED的光的再吸收最小化。 为了帮助最小化内部反射，可以使用透明电极，例如ITO或ZnO。 通过图案化或各向异性蚀刻（即，制造微孔）的表面粗糙化也可以有助于光提取，以及最小化内部反射。